CN102083743A - Ⅲ族氮化物模板和与之相关的异质结构、器件及它们的制造方法 - Google Patents

Ⅲ族氮化物模板和与之相关的异质结构、器件及它们的制造方法 Download PDF

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Publication number
CN102083743A
CN102083743A CN200980126174XA CN200980126174A CN102083743A CN 102083743 A CN102083743 A CN 102083743A CN 200980126174X A CN200980126174X A CN 200980126174XA CN 200980126174 A CN200980126174 A CN 200980126174A CN 102083743 A CN102083743 A CN 102083743A
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China
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sublayer
template layer
pillar
nano
post
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CN200980126174XA
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English (en)
Chinese (zh)
Inventor
T·帕斯科瓦
E·A·普雷布尔
T·L·克利特斯
A·D·汉瑟
K·R·埃文斯
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Kyma Technologies Inc
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Kyma Technologies Inc
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Publication of CN102083743A publication Critical patent/CN102083743A/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
CN200980126174XA 2008-05-06 2009-05-06 Ⅲ族氮化物模板和与之相关的异质结构、器件及它们的制造方法 Pending CN102083743A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12668008P 2008-05-06 2008-05-06
US61/126680 2008-05-06
PCT/US2009/042949 WO2009137556A2 (en) 2008-05-06 2009-05-06 Group iii nitride templates and related heterostructures, devices, and methods for making them

Publications (1)

Publication Number Publication Date
CN102083743A true CN102083743A (zh) 2011-06-01

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CN200980126174XA Pending CN102083743A (zh) 2008-05-06 2009-05-06 Ⅲ族氮化物模板和与之相关的异质结构、器件及它们的制造方法

Country Status (6)

Country Link
US (2) US20110127544A1 (enExample)
EP (1) EP2285736A2 (enExample)
JP (1) JP2011524322A (enExample)
KR (1) KR20110018890A (enExample)
CN (1) CN102083743A (enExample)
WO (1) WO2009137556A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102629633A (zh) * 2012-04-29 2012-08-08 西安电子科技大学 GaN纳米柱反转结构的混合太阳能电池的制作方法
CN106206868A (zh) * 2016-07-25 2016-12-07 哈尔滨工业大学 一种高效率发光的纳米ZnO/AlN异质结的制备方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI456791B (zh) * 2011-01-20 2014-10-11 Hon Hai Prec Ind Co Ltd 半導體發光晶片及其製造方法
KR102083043B1 (ko) * 2012-03-21 2020-02-28 프라이베르게르 컴파운드 마터리얼스 게엠베하 Iii-n 템플레이트의 제조방법과 이의 재처리 및 iii-n 템플레이트
DE102012211314A1 (de) * 2012-06-29 2014-02-20 Siemens Aktiengesellschaft Verfahren zum Herstellen eines polykristallinen Keramikfilms
DE102012107001A1 (de) * 2012-07-31 2014-02-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
TWI473295B (zh) * 2012-11-29 2015-02-11 Kingwave Corp 應力與缺陷間均衡化之半導體模板之製造方法
KR20140104756A (ko) 2013-02-21 2014-08-29 삼성전자주식회사 질화물 반도체 발광소자 및 그 제조방법
KR102094471B1 (ko) 2013-10-07 2020-03-27 삼성전자주식회사 질화물 반도체층의 성장방법 및 이에 의하여 형성된 질화물 반도체
KR102099877B1 (ko) 2013-11-05 2020-04-10 삼성전자 주식회사 질화물 반도체 디바이스의 제조 방법
JP6375890B2 (ja) * 2014-11-18 2018-08-22 日亜化学工業株式会社 窒化物半導体素子及びその製造方法
FR3053531B1 (fr) * 2016-06-30 2018-08-17 Aledia Dispositif optoelectronique a diodes tridimensionnelles
US10718726B2 (en) * 2017-10-13 2020-07-21 Infineon Technologies Austria Ag Method for determining the concentration of an element of a heteroepitaxial layer

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020086534A1 (en) * 2000-11-30 2002-07-04 Cuomo Jerome J. M'''N based materials and methods and apparatus for producing same
CN1544315A (zh) * 2003-11-10 2004-11-10 �Ϻ���ͨ��ѧ 氮化铝一维纳米结构阵列及其制备方法
JP2007123398A (ja) * 2005-10-26 2007-05-17 Matsushita Electric Works Ltd 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法
CN1978310A (zh) * 2005-12-09 2007-06-13 中国科学院物理研究所 一种表面纳米锥阵列及其制作方法
CN101041905A (zh) * 2007-03-13 2007-09-26 南京大学 氧化铝多孔一维纳米材料及其制备方法和应用

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6713789B1 (en) * 1999-03-31 2004-03-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method of producing the same
JP4084544B2 (ja) * 2001-03-30 2008-04-30 豊田合成株式会社 半導体基板及び半導体素子の製造方法
JP4084541B2 (ja) * 2001-02-14 2008-04-30 豊田合成株式会社 半導体結晶及び半導体発光素子の製造方法
WO2003015143A1 (fr) * 2001-08-01 2003-02-20 Nagoya Industrial Science Research Institute Film semi-conducteur en nitrure du groupe iii et son procede de production
WO2008048704A2 (en) * 2006-03-10 2008-04-24 Stc.Unm Pulsed growth of gan nanowires and applications in group iii nitride semiconductor substrate materials and devices
JP5043363B2 (ja) * 2006-04-27 2012-10-10 住友電気工業株式会社 窒化ガリウム結晶体を形成する方法、基板、および窒化ガリウム基板を形成する方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020086534A1 (en) * 2000-11-30 2002-07-04 Cuomo Jerome J. M'''N based materials and methods and apparatus for producing same
US6692568B2 (en) * 2000-11-30 2004-02-17 Kyma Technologies, Inc. Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon
CN1544315A (zh) * 2003-11-10 2004-11-10 �Ϻ���ͨ��ѧ 氮化铝一维纳米结构阵列及其制备方法
JP2007123398A (ja) * 2005-10-26 2007-05-17 Matsushita Electric Works Ltd 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法
CN1978310A (zh) * 2005-12-09 2007-06-13 中国科学院物理研究所 一种表面纳米锥阵列及其制作方法
CN101041905A (zh) * 2007-03-13 2007-09-26 南京大学 氧化铝多孔一维纳米材料及其制备方法和应用

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
YOSHIZAWA M.ET AL.: "Growth of Self-Organized GaN Nanostructures on Al2O3(0001) by RF-Radical Source Molecular Beam Epitaxy", 《JAPANESE JOURNAL OF APPLIED PHYSICS》 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102629633A (zh) * 2012-04-29 2012-08-08 西安电子科技大学 GaN纳米柱反转结构的混合太阳能电池的制作方法
CN102629633B (zh) * 2012-04-29 2014-06-04 西安电子科技大学 GaN纳米柱反转结构的混合太阳能电池的制作方法
CN106206868A (zh) * 2016-07-25 2016-12-07 哈尔滨工业大学 一种高效率发光的纳米ZnO/AlN异质结的制备方法

Also Published As

Publication number Publication date
EP2285736A2 (en) 2011-02-23
KR20110018890A (ko) 2011-02-24
US20120235161A1 (en) 2012-09-20
WO2009137556A2 (en) 2009-11-12
JP2011524322A (ja) 2011-09-01
WO2009137556A3 (en) 2010-02-25
US20110127544A1 (en) 2011-06-02

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Application publication date: 20110601