KR20110018890A - 제ｉｉｉ족 질화물 주형 및 관련된 헤테로구조체, 장치, 및 그들의 제조 방법 - Google Patents
제ｉｉｉ족 질화물 주형 및 관련된 헤테로구조체, 장치, 및 그들의 제조 방법 Download PDFInfo
- Publication number
- KR20110018890A KR20110018890A KR1020107027186A KR20107027186A KR20110018890A KR 20110018890 A KR20110018890 A KR 20110018890A KR 1020107027186 A KR1020107027186 A KR 1020107027186A KR 20107027186 A KR20107027186 A KR 20107027186A KR 20110018890 A KR20110018890 A KR 20110018890A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- substrate
- sublayer
- nanopillar
- templated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims description 47
- 239000000758 substrate Substances 0.000 claims abstract description 148
- 239000002061 nanopillar Substances 0.000 claims abstract description 62
- 239000000203 mixture Substances 0.000 claims abstract description 18
- 239000013078 crystal Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 13
- 230000003746 surface roughness Effects 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000001771 vacuum deposition Methods 0.000 claims description 5
- 229910020068 MgAl Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 223
- 239000000872 buffer Substances 0.000 description 27
- 239000007789 gas Substances 0.000 description 17
- 229910002601 GaN Inorganic materials 0.000 description 16
- 238000002441 X-ray diffraction Methods 0.000 description 14
- 238000004630 atomic force microscopy Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 229910010271 silicon carbide Inorganic materials 0.000 description 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 11
- 238000010993 response surface methodology Methods 0.000 description 9
- 238000004377 microelectronic Methods 0.000 description 8
- 230000006911 nucleation Effects 0.000 description 8
- 238000010899 nucleation Methods 0.000 description 8
- 238000013459 approach Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 208000012868 Overgrowth Diseases 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- -1 6H-SiC or 4H-SiC Chemical compound 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910010093 LiAlO Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000007847 structural defect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000000089 atomic force micrograph Methods 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- WUPRCGRRQUZFAB-DEGKJRJSSA-N corrin Chemical compound N1C2CC\C1=C\C(CC/1)=N\C\1=C/C(CC\1)=N/C/1=C\C1=NC2CC1 WUPRCGRRQUZFAB-DEGKJRJSSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
- MNKMDLVKGZBOEW-UHFFFAOYSA-M lithium;3,4,5-trihydroxybenzoate Chemical compound [Li+].OC1=CC(C([O-])=O)=CC(O)=C1O MNKMDLVKGZBOEW-UHFFFAOYSA-M 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000004899 motility Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12668008P | 2008-05-06 | 2008-05-06 | |
| US61/126,680 | 2008-05-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20110018890A true KR20110018890A (ko) | 2011-02-24 |
Family
ID=41265363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020107027186A Withdrawn KR20110018890A (ko) | 2008-05-06 | 2009-05-06 | 제ｉｉｉ족 질화물 주형 및 관련된 헤테로구조체, 장치, 및 그들의 제조 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20110127544A1 (enExample) |
| EP (1) | EP2285736A2 (enExample) |
| JP (1) | JP2011524322A (enExample) |
| KR (1) | KR20110018890A (enExample) |
| CN (1) | CN102083743A (enExample) |
| WO (1) | WO2009137556A2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI456791B (zh) * | 2011-01-20 | 2014-10-11 | Hon Hai Prec Ind Co Ltd | 半導體發光晶片及其製造方法 |
| JP6349298B2 (ja) * | 2012-03-21 | 2018-06-27 | フライベルガー・コンパウンド・マテリアルズ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツングＦｒｅｉｂｅｒｇｅｒ Ｃｏｍｐｏｕｎｄ Ｍａｔｅｒｉａｌｓ Ｇｍｂｈ | Ｉｉｉ−ｎ単結晶製造方法およびｉｉｉ−ｎ単結晶 |
| CN102629633B (zh) * | 2012-04-29 | 2014-06-04 | 西安电子科技大学 | GaN纳米柱反转结构的混合太阳能电池的制作方法 |
| DE102012211314A1 (de) * | 2012-06-29 | 2014-02-20 | Siemens Aktiengesellschaft | Verfahren zum Herstellen eines polykristallinen Keramikfilms |
| DE102012107001A1 (de) * | 2012-07-31 | 2014-02-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
| TWI473295B (zh) * | 2012-11-29 | 2015-02-11 | Kingwave Corp | 應力與缺陷間均衡化之半導體模板之製造方法 |
| KR20140104756A (ko) | 2013-02-21 | 2014-08-29 | 삼성전자주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| KR102094471B1 (ko) | 2013-10-07 | 2020-03-27 | 삼성전자주식회사 | 질화물 반도체층의 성장방법 및 이에 의하여 형성된 질화물 반도체 |
| KR102099877B1 (ko) | 2013-11-05 | 2020-04-10 | 삼성전자 주식회사 | 질화물 반도체 디바이스의 제조 방법 |
| JP6375890B2 (ja) | 2014-11-18 | 2018-08-22 | 日亜化学工業株式会社 | 窒化物半導体素子及びその製造方法 |
| FR3053531B1 (fr) * | 2016-06-30 | 2018-08-17 | Aledia | Dispositif optoelectronique a diodes tridimensionnelles |
| CN106206868A (zh) * | 2016-07-25 | 2016-12-07 | 哈尔滨工业大学 | 一种高效率发光的纳米ZnO/AlN异质结的制备方法 |
| US10718726B2 (en) * | 2017-10-13 | 2020-07-21 | Infineon Technologies Austria Ag | Method for determining the concentration of an element of a heteroepitaxial layer |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6713789B1 (en) * | 1999-03-31 | 2004-03-30 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device and method of producing the same |
| AU2002219978A1 (en) * | 2000-11-30 | 2002-06-11 | Kyma Technologies, Inc. | Method and apparatus for producing miiin columns and miiin materials grown thereon |
| JP4084544B2 (ja) * | 2001-03-30 | 2008-04-30 | 豊田合成株式会社 | 半導体基板及び半導体素子の製造方法 |
| JP4084541B2 (ja) * | 2001-02-14 | 2008-04-30 | 豊田合成株式会社 | 半導体結晶及び半導体発光素子の製造方法 |
| JPWO2003015143A1 (ja) * | 2001-08-01 | 2004-12-02 | 財団法人名古屋産業科学研究所 | Ｉｉｉ族窒化物半導体膜およびその製造方法 |
| CN1248957C (zh) * | 2003-11-10 | 2006-04-05 | 南京大学 | 氮化铝一维纳米结构阵列的制备方法 |
| JP4552828B2 (ja) * | 2005-10-26 | 2010-09-29 | パナソニック電工株式会社 | 半導体発光素子の製造方法 |
| CN100593015C (zh) * | 2005-12-09 | 2010-03-03 | 中国科学院物理研究所 | 一种表面纳米锥阵列及其制作方法 |
| MX2008011275A (es) * | 2006-03-10 | 2008-11-25 | Stc Unm | Crecimiento pulsado de nanoalambres de gan y aplicaciones en materiales y dispositivos de substrato semiconductor de nitruros del grupo iii. |
| JP5043363B2 (ja) * | 2006-04-27 | 2012-10-10 | 住友電気工業株式会社 | 窒化ガリウム結晶体を形成する方法、基板、および窒化ガリウム基板を形成する方法 |
| CN100476046C (zh) * | 2007-03-13 | 2009-04-08 | 南京大学 | 氧化铝多孔一维纳米材料及其制备方法和应用 |
-
2009
- 2009-05-06 CN CN200980126174XA patent/CN102083743A/zh active Pending
- 2009-05-06 WO PCT/US2009/042949 patent/WO2009137556A2/en not_active Ceased
- 2009-05-06 US US12/991,180 patent/US20110127544A1/en not_active Abandoned
- 2009-05-06 JP JP2011508623A patent/JP2011524322A/ja active Pending
- 2009-05-06 KR KR1020107027186A patent/KR20110018890A/ko not_active Withdrawn
- 2009-05-06 EP EP09743542A patent/EP2285736A2/en not_active Withdrawn
-
2012
- 2012-05-31 US US13/484,841 patent/US20120235161A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| CN102083743A (zh) | 2011-06-01 |
| EP2285736A2 (en) | 2011-02-23 |
| JP2011524322A (ja) | 2011-09-01 |
| US20110127544A1 (en) | 2011-06-02 |
| WO2009137556A2 (en) | 2009-11-12 |
| WO2009137556A3 (en) | 2010-02-25 |
| US20120235161A1 (en) | 2012-09-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20110018890A (ko) | 제ｉｉｉ족 질화물 주형 및 관련된 헤테로구조체, 장치, 및 그들의 제조 방법 | |
| CN102174712B (zh) | (Al,In,Ga)N 衬底及其制备方法、微电子或光电子器件制品 | |
| JP4172657B2 (ja) | ＧａＮ単結晶成長方法，ＧａＮ基板作製方法，ＧａＮ系素子製造方法およびＧａＮ系素子 | |
| CN106968014B (zh) | 用于制备iii-n单晶的方法以及iii-n单晶 | |
| US20130168833A1 (en) | METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION | |
| TWI404122B (zh) | 增進半-極性（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎ藉由金屬有機化學氣相沈積生長之方法 | |
| KR101668385B1 (ko) | 육방정 우르차이트 단결정 | |
| JP2006290677A (ja) | 窒化物系化合物半導体結晶の製造方法及び窒化物系化合物半導体基板の製造方法 | |
| Mastari et al. | SiGe nano-heteroepitaxy on Si and SiGe nano-pillars | |
| JP7327532B2 (ja) | ＧａＮ単結晶およびＧａＮ単結晶製造方法 | |
| US8222057B2 (en) | Crack free multilayered devices, methods of manufacture thereof and articles comprising the same | |
| JP2008110912A (ja) | 基板の製造方法 | |
| JP4248006B2 (ja) | 基板の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20101203 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |