KR20110018890A - 제ｉｉｉ족 질화물 주형 및 관련된 헤테로구조체, 장치, 및 그들의 제조 방법 - Google Patents

제ｉｉｉ족 질화물 주형 및 관련된 헤테로구조체, 장치, 및 그들의 제조 방법 Download PDF

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KR20110018890A
KR20110018890A KR1020107027186A KR20107027186A KR20110018890A KR 20110018890 A KR20110018890 A KR 20110018890A KR 1020107027186 A KR1020107027186 A KR 1020107027186A KR 20107027186 A KR20107027186 A KR 20107027186A KR 20110018890 A KR20110018890 A KR 20110018890A
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South Korea
Prior art keywords
layer
substrate
sublayer
nanopillar
templated
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KR1020107027186A
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English (en)
Korean (ko)
Inventor
타냐 파스코바
에드워드 에이. 프레블레
테리 엘. 클라이츠
앤드류 디. 한저
키스 알. 에반스
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키마 테크놀로지스, 인코포레이티드
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Publication of KR20110018890A publication Critical patent/KR20110018890A/ko
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020107027186A 2008-05-06 2009-05-06 제ｉｉｉ족 질화물 주형 및 관련된 헤테로구조체, 장치, 및 그들의 제조 방법 Withdrawn KR20110018890A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12668008P 2008-05-06 2008-05-06
US61/126,680 2008-05-06

Publications (1)

Publication Number Publication Date
KR20110018890A true KR20110018890A (ko) 2011-02-24

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KR1020107027186A Withdrawn KR20110018890A (ko) 2008-05-06 2009-05-06 제ｉｉｉ족 질화물 주형 및 관련된 헤테로구조체, 장치, 및 그들의 제조 방법

Country Status (6)

Country Link
US (2) US20110127544A1 (enExample)
EP (1) EP2285736A2 (enExample)
JP (1) JP2011524322A (enExample)
KR (1) KR20110018890A (enExample)
CN (1) CN102083743A (enExample)
WO (1) WO2009137556A2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI456791B (zh) * 2011-01-20 2014-10-11 鴻海精密工業股份有限公司 半導體發光晶片及其製造方法
WO2013139888A1 (de) * 2012-03-21 2013-09-26 Freiberger Compound Materials Gmbh Verfahren zur herstellung von iii-n-templaten und deren weiterverarbeitung, und iii-n-template
CN102629633B (zh) * 2012-04-29 2014-06-04 西安电子科技大学 GaN纳米柱反转结构的混合太阳能电池的制作方法
DE102012211314A1 (de) 2012-06-29 2014-02-20 Siemens Aktiengesellschaft Verfahren zum Herstellen eines polykristallinen Keramikfilms
DE102012107001A1 (de) * 2012-07-31 2014-02-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
TWI473295B (zh) * 2012-11-29 2015-02-11 京越科技股份有限公司 應力與缺陷間均衡化之半導體模板之製造方法
KR20140104756A (ko) 2013-02-21 2014-08-29 삼성전자주식회사 질화물 반도체 발광소자 및 그 제조방법
KR102094471B1 (ko) 2013-10-07 2020-03-27 삼성전자주식회사 질화물 반도체층의 성장방법 및 이에 의하여 형성된 질화물 반도체
KR102099877B1 (ko) 2013-11-05 2020-04-10 삼성전자 주식회사 질화물 반도체 디바이스의 제조 방법
JP6375890B2 (ja) * 2014-11-18 2018-08-22 日亜化学工業株式会社 窒化物半導体素子及びその製造方法
FR3053531B1 (fr) * 2016-06-30 2018-08-17 Aledia Dispositif optoelectronique a diodes tridimensionnelles
CN106206868A (zh) * 2016-07-25 2016-12-07 哈尔滨工业大学 一种高效率发光的纳米ZnO/AlN异质结的制备方法
US10718726B2 (en) * 2017-10-13 2020-07-21 Infineon Technologies Austria Ag Method for determining the concentration of an element of a heteroepitaxial layer

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6713789B1 (en) * 1999-03-31 2004-03-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method of producing the same
AU2002219978A1 (en) * 2000-11-30 2002-06-11 Kyma Technologies, Inc. Method and apparatus for producing miiin columns and miiin materials grown thereon
JP4084541B2 (ja) * 2001-02-14 2008-04-30 豊田合成株式会社 半導体結晶及び半導体発光素子の製造方法
JP4084544B2 (ja) * 2001-03-30 2008-04-30 豊田合成株式会社 半導体基板及び半導体素子の製造方法
EP1422748A1 (en) * 2001-08-01 2004-05-26 Nagoya Industrial Science Research Institute Group iii nitride semiconductor film and its production method
CN1248957C (zh) * 2003-11-10 2006-04-05 南京大学 氮化铝一维纳米结构阵列的制备方法
JP4552828B2 (ja) * 2005-10-26 2010-09-29 パナソニック電工株式会社 半導体発光素子の製造方法
CN100593015C (zh) * 2005-12-09 2010-03-03 中国科学院物理研究所 一种表面纳米锥阵列及其制作方法
EP1994552B1 (en) * 2006-03-10 2020-12-30 UNM Rainforest Innovations Two-phase growth of group iii-v nanowires
JP5043363B2 (ja) * 2006-04-27 2012-10-10 住友電気工業株式会社 窒化ガリウム結晶体を形成する方法、基板、および窒化ガリウム基板を形成する方法
CN100476046C (zh) * 2007-03-13 2009-04-08 南京大学 氧化铝多孔一维纳米材料及其制备方法和应用

Also Published As

Publication number Publication date
WO2009137556A3 (en) 2010-02-25
US20120235161A1 (en) 2012-09-20
CN102083743A (zh) 2011-06-01
EP2285736A2 (en) 2011-02-23
WO2009137556A2 (en) 2009-11-12
JP2011524322A (ja) 2011-09-01
US20110127544A1 (en) 2011-06-02

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Patent event date: 20101203

Patent event code: PA01051R01D

Comment text: International Patent Application

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