JP2011524322A - Ｉｉｉ族窒化物テンプレート、ならびにそれを構成するための関連するヘテロ構造、デバイスおよび方法 - Google Patents

Ｉｉｉ族窒化物テンプレート、ならびにそれを構成するための関連するヘテロ構造、デバイスおよび方法 Download PDF

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JP2011524322A
JP2011524322A JP2011508623A JP2011508623A JP2011524322A JP 2011524322 A JP2011524322 A JP 2011524322A JP 2011508623 A JP2011508623 A JP 2011508623A JP 2011508623 A JP2011508623 A JP 2011508623A JP 2011524322 A JP2011524322 A JP 2011524322A
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JP2011524322A5 (enExample
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ターニャ パスコヴァ，
エドワード エー． プレブル，
テリー エル． クリーツ，
アンドリュー ディー． ハンサー，
キース アール． エバンズ，
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キマ テクノロジーズ， インコーポレイテッド
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Publication of JP2011524322A publication Critical patent/JP2011524322A/ja
Publication of JP2011524322A5 publication Critical patent/JP2011524322A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
JP2011508623A 2008-05-06 2009-05-06 Ｉｉｉ族窒化物テンプレート、ならびにそれを構成するための関連するヘテロ構造、デバイスおよび方法 Pending JP2011524322A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12668008P 2008-05-06 2008-05-06
US61/126,680 2008-05-06
PCT/US2009/042949 WO2009137556A2 (en) 2008-05-06 2009-05-06 Group iii nitride templates and related heterostructures, devices, and methods for making them

Publications (2)

Publication Number Publication Date
JP2011524322A true JP2011524322A (ja) 2011-09-01
JP2011524322A5 JP2011524322A5 (enExample) 2012-06-07

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JP2011508623A Pending JP2011524322A (ja) 2008-05-06 2009-05-06 Ｉｉｉ族窒化物テンプレート、ならびにそれを構成するための関連するヘテロ構造、デバイスおよび方法

Country Status (6)

Country Link
US (2) US20110127544A1 (enExample)
EP (1) EP2285736A2 (enExample)
JP (1) JP2011524322A (enExample)
KR (1) KR20110018890A (enExample)
CN (1) CN102083743A (enExample)
WO (1) WO2009137556A2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI456791B (zh) * 2011-01-20 2014-10-11 Hon Hai Prec Ind Co Ltd 半導體發光晶片及其製造方法
JP6349298B2 (ja) * 2012-03-21 2018-06-27 フライベルガー・コンパウンド・マテリアルズ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツングＦｒｅｉｂｅｒｇｅｒ Ｃｏｍｐｏｕｎｄ Ｍａｔｅｒｉａｌｓ Ｇｍｂｈ Ｉｉｉ−ｎ単結晶製造方法およびｉｉｉ−ｎ単結晶
CN102629633B (zh) * 2012-04-29 2014-06-04 西安电子科技大学 GaN纳米柱反转结构的混合太阳能电池的制作方法
DE102012211314A1 (de) * 2012-06-29 2014-02-20 Siemens Aktiengesellschaft Verfahren zum Herstellen eines polykristallinen Keramikfilms
DE102012107001A1 (de) * 2012-07-31 2014-02-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
TWI473295B (zh) * 2012-11-29 2015-02-11 Kingwave Corp 應力與缺陷間均衡化之半導體模板之製造方法
KR20140104756A (ko) 2013-02-21 2014-08-29 삼성전자주식회사 질화물 반도체 발광소자 및 그 제조방법
KR102094471B1 (ko) 2013-10-07 2020-03-27 삼성전자주식회사 질화물 반도체층의 성장방법 및 이에 의하여 형성된 질화물 반도체
KR102099877B1 (ko) 2013-11-05 2020-04-10 삼성전자 주식회사 질화물 반도체 디바이스의 제조 방법
JP6375890B2 (ja) 2014-11-18 2018-08-22 日亜化学工業株式会社 窒化物半導体素子及びその製造方法
FR3053531B1 (fr) * 2016-06-30 2018-08-17 Aledia Dispositif optoelectronique a diodes tridimensionnelles
CN106206868A (zh) * 2016-07-25 2016-12-07 哈尔滨工业大学 一种高效率发光的纳米ZnO/AlN异质结的制备方法
US10718726B2 (en) * 2017-10-13 2020-07-21 Infineon Technologies Austria Ag Method for determining the concentration of an element of a heteroepitaxial layer

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002241192A (ja) * 2001-02-14 2002-08-28 Toyoda Gosei Co Ltd 半導体結晶の製造方法及び半導体発光素子
JP2002293698A (ja) * 2001-03-30 2002-10-09 Toyoda Gosei Co Ltd 半導体基板の製造方法及び半導体素子
WO2003015143A1 (fr) * 2001-08-01 2003-02-20 Nagoya Industrial Science Research Institute Film semi-conducteur en nitrure du groupe iii et son procede de production
JP2004523450A (ja) * 2000-11-30 2004-08-05 ノース・キャロライナ・ステイト・ユニヴァーシティ Ｍ’ｎベース物質の生成装置及び生成方法
JP2007123398A (ja) * 2005-10-26 2007-05-17 Matsushita Electric Works Ltd 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法
JP2007297223A (ja) * 2006-04-27 2007-11-15 Sumitomo Electric Ind Ltd 窒化ガリウム結晶体を形成する方法、基板、および窒化ガリウム基板を形成する方法
WO2008048704A2 (en) * 2006-03-10 2008-04-24 Stc.Unm Pulsed growth of gan nanowires and applications in group iii nitride semiconductor substrate materials and devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6713789B1 (en) * 1999-03-31 2004-03-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method of producing the same
CN1248957C (zh) * 2003-11-10 2006-04-05 南京大学 氮化铝一维纳米结构阵列的制备方法
CN100593015C (zh) * 2005-12-09 2010-03-03 中国科学院物理研究所 一种表面纳米锥阵列及其制作方法
CN100476046C (zh) * 2007-03-13 2009-04-08 南京大学 氧化铝多孔一维纳米材料及其制备方法和应用

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004523450A (ja) * 2000-11-30 2004-08-05 ノース・キャロライナ・ステイト・ユニヴァーシティ Ｍ’ｎベース物質の生成装置及び生成方法
JP2002241192A (ja) * 2001-02-14 2002-08-28 Toyoda Gosei Co Ltd 半導体結晶の製造方法及び半導体発光素子
JP2002293698A (ja) * 2001-03-30 2002-10-09 Toyoda Gosei Co Ltd 半導体基板の製造方法及び半導体素子
WO2003015143A1 (fr) * 2001-08-01 2003-02-20 Nagoya Industrial Science Research Institute Film semi-conducteur en nitrure du groupe iii et son procede de production
JP2007123398A (ja) * 2005-10-26 2007-05-17 Matsushita Electric Works Ltd 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法
WO2008048704A2 (en) * 2006-03-10 2008-04-24 Stc.Unm Pulsed growth of gan nanowires and applications in group iii nitride semiconductor substrate materials and devices
JP2007297223A (ja) * 2006-04-27 2007-11-15 Sumitomo Electric Ind Ltd 窒化ガリウム結晶体を形成する方法、基板、および窒化ガリウム基板を形成する方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JPN6013029224; 日下一也　他: '高周波スパッタリング生成した単結晶窒化ガリウム膜の残留応力測定' Ｘ線材料強度に関するシンポジウム講演論文集 Ｖｏｌ．　３８, 20020905, ｐｐ．　４１-４６, 社団法人日本材料学会 *
JPN6013029226; Ｙ．　Ｄａｉｇｏ　ａｎｄ　Ｎ．　Ｍｕｔｓｕｋｕｒａ: 'Ｓｙｎｔｈｅｓｉｓ　ｏｆ　ｅｐｉｔａｘｉａｌ　ＧａＮ　ｓｉｎｇｌｅ-ｃｒｙｓｔａｌｌｉｎｅ　ｆｉｌｍ　ｂｙ　ｕｌｔｒａ　ｈｉｇｈ　ｖａｃｕｕｍ　ｒ．ｆ．　ｍａｇｎｅｔｒｏｎ　ｓｐｕｔｔｅｒｉｎｇ　ｍｅ' Ｔｈｉｎ　Ｓｏｌｉｄ　Ｆｉｌｍｓ Ｖｏｌ．　４８３, 20050701, ｐｐ．　３８-４３, Ｅｌｓｅｖｉｅｒ　Ｂ．　Ｖ． *
JPN6013029227; Ｈ．　Ｓｈｉｎｏｄａ　ａｎｄ　Ｎ．　Ｍｕｔｓｕｋｕｒａ: 'Ｓｔｒｕｃｔｕｒａｌ　ｐｒｏｐｅｒｔｉｅｓ　ｏｆ　ＧａＮ　ａｎｄ　ｒｅｌａｔｅｄ　ａｌｌｏｙｓ　ｇｒｏｗｎ　ｂｙ　ｒａｄｉｏ-ｆｒｅｑｕｅｎｃｙ　ｍａｇｎｅｔｒｏｎ　ｓｐｕｔｔｅｒ　ｅｐｉｔａｘｙ' Ｔｈｉｎ　Ｓｏｌｉｄ　Ｆｉｌｍｓ Ｖｏｌ．　５１６, 20080331, ｐｐ．　２８３７-２８４２, Ｅｌｓｅｖｉｅｒ　Ｂ．　Ｖ． *

Also Published As

Publication number Publication date
CN102083743A (zh) 2011-06-01
EP2285736A2 (en) 2011-02-23
US20110127544A1 (en) 2011-06-02
KR20110018890A (ko) 2011-02-24
WO2009137556A2 (en) 2009-11-12
WO2009137556A3 (en) 2010-02-25
US20120235161A1 (en) 2012-09-20

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