CN102071090A - Wire cutting solution for solar silicon slice - Google Patents
Wire cutting solution for solar silicon slice Download PDFInfo
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- CN102071090A CN102071090A CN2009101990934A CN200910199093A CN102071090A CN 102071090 A CN102071090 A CN 102071090A CN 2009101990934 A CN2009101990934 A CN 2009101990934A CN 200910199093 A CN200910199093 A CN 200910199093A CN 102071090 A CN102071090 A CN 102071090A
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Abstract
The invention provides wire cutting solution for a solar silicon slice. The cutting solution comprises a) polyethylene glycol, b) water, c) a dispersing agent, d) a surfactant, e) an antifoaming agent and f) a metal corrosion inhibitor. The stability of silicon carbide can be improved by wire cutting, and the wire cutting solution has extremely high redispersibility, so that the cutting yield is improved, and the cutting cost is reduced to a great extent; and the wire cutting solution is environmentally-friendly and is convenient to recycle.
Description
Technical field
The present invention relates to a kind of wire cutting liquid that is used for solar silicon wafers.
Background technology
China's photovoltaic generation industry through the effort in more than 30 years, has welcome the fast-developing new stage in the starting seventies in 20th century.Under the strong pulling in national project such as " bright engineering " guide's project and " every township will have electricity " engineering and photovoltaic market, the world, China's photovoltaic generation industry fast development.To the end of the year in 2007, the accumulative total installed capacity of national photovoltaic system reached 100,000 kilowatts, and the output of solar cell in 2008 has reached 2,000,000 kilowatts.
The solar silicon wafers cutting generally is to use the hardness height, granularity is little and the main cutting of the silicon carbide micro-powder of centralized particle diameter conduct medium, for silicon carbide micro-powder is uniformly dispersed in working angles, in time take away simultaneously the huge heat of friction that produces in the working angles, usually need earlier the carbonization micro mist to be joined according to a certain percentage in the cutting liquid, and fully disperse, be configured to be used further to the silicon chip cutting behind the uniform and stable cutting mortar.Use silicon carbide micro-powder as medium in solar silicon wafers line cutting process, whole mechanism is to make the silicon carbide micro-powder particle impact the silicon rod surface continuously and healthily, utilize the rigid characteristic and the sharp water caltrop of silicon-carbide particle that silicon rod is progressively blocked, this process can be accompanied by bigger heat of friction and discharge, and broken silicon-carbide particle and the silicon grain that produces owing to the collision between silicon-carbide particle and the silicon rod and friction also will be sneaked in the cutting system simultaneously.Cut the influence that system temperature raises and warpage is taken place and its surface is influenced its smooth finish by particle over-mastication in small, broken bits for fear of the silicon chip that is cut out, must manage in time to take cutting heat and crushed particles out of the cutting system, the main effect of therefore cutting liquid is to make mortar have good flowability, the dispersion that silicon-carbide particle is can be in the cutting system uniform and stable, in the high-speed motion of steel wire with the cutting force field action of uniform and stable in the silicon rod surface, in time take away simultaneously cutting heat and crushed particles, guarantee the surface quality of silicon chip.
Along with the development of whole sun power industry, solar silicon wafers cutting liquid is had higher requirement.Shortcomings such as there is poor stability in the cutting liquid on the market now, and slicing yield is not high, and price height, cutting power are not strong, and much the people thinks that silicon chip cutting technique content is not high, does not need innovation.But under the economic crisis influence, whole industry is all being done unremitting effort in order to improve silicon chip quality and reduction cutting cost.
Summary of the invention
The purpose of this invention is to provide a kind of efficient stable solar silicon wafers cutting cheaply liquid, to solve the technical problem that exists in the aforementioned prior art.Cutting liquid cutting fluid composition weight percent content of the present invention is:
It is to be liquid state under the normal temperature condition that the polyoxyethylene glycol that the present invention mentioned requires, and its molecular weight is at 100-600.Because polyoxyethylene glycol is a non-ionic polyalcohol, and can carry out the characteristic that arbitrary proportion dissolves each other and waits himself to exist with water, so the performance characteristics of polyoxyethylene glycol (PEG) plays a part can not be substituted as the main body of silicon chip cutting fluid and the course of processing of silicon chip.Wherein preferred molecular weight is the 200-300 polyoxyethylene glycol; Most preferably molecular weight is 200 polyoxyethylene glycol.
Among the present invention, described dispersion agent is meant poly-organic carboxyl acid class dispersion agent, comprises polyacrylic acid, polymethyl acrylic acid, poly-ethylacrylic acid, polyalkenyl sulfonic acid, polystyrolsulfon acid, in the polymaleic anhydride one or more, preferred polymethyl acrylic acid, one or more in the poly-ethylacrylic acid; Polyacrylic acid most preferably, polyalkenyl sulfonic acid, polystyrolsulfon acid, one or more in the polymaleic anhydride.
Among the present invention, described tensio-active agent preferable is selected from Tetramethylammonium hydroxide, tetraethyl ammonium hydroxide, TPAOH, TBAH and the benzyltrimethylammonium hydroxide one or more.
Among the present invention, described defoamer preferable is selected from polymethyl siloxane, poly-ethylsiloxane, poly-propyl-siloxane, poly-butyl siloxanes, polymethy ethylsiloxane and the polydimethylsiloxane one or more.
Among the present invention, described metal corrosion inhibitor, the preferable phenols that is selected from, as phenol, 1,2-dihydroxyl phenol, para hydroxybenzene phenol or pyrogallol etc.; Carboxylic-acid is as phenylformic acid, para-amino benzoic acid (PABA), phthalic acid (PA) or gallic acid (GA) etc.; Carboxylic acid esters is as methyl p-aminobenzoate, Methyl Benzene-o-dicarboxylate or Tenox PG etc.; Anhydrides is as in diacetyl oxide or the caproic anhydride etc. one or more; The best benzotriazole that is selected from is as in the corrosion inhibitors such as benzotriazole, methyl benzotriazazole or 4-carboxy benzotriazole one or more.
Among the present invention, described water is used to dissolve dispersion agent, tensio-active agent, defoamer and metal corrosion inhibitor.Its preferable content is less than 8%, and optimum content is less than 5%.
Positively effect of the present invention is: 1, cutting liquid stability is good; 2, slicing yield height; 3, price is low; 4, cutting power is strong; 5. extraordinary redispersion ability.
Embodiment
Introduce effect of the present invention in detail below by specific embodiment.
Embodiment 1～5
Embodiment 1 preparation 1000g wire cutting liquid
Take by weighing 947.5 gram PEG200,21.5 gram polyacrylic acid, 28 gram tetraethyl ammonium hydroxides, 2.5 gram polymethyl siloxanes, 0.5 gram benzotriazole.
21.5 gram polyacrylic acid are slowly joined among the 947.5 gram PEG200, stirred 30 minutes; Then 28 gram tetraethyl ammonium hydroxides slowly are added drop-wise among the PEG200, continue to stir, when 28 gram tetraethyl ammonium hydroxides are all dropwised, continue to stir and finished in 30 minutes, add 2.5 gram polymethyl siloxanes and 0.5 gram benzotriazole, continue to stir and finished in 30 minutes, obtain wire cutting liquid.
With the cutting liquid for preparing, with 1200 model SiC be 53: 47 preparation cutting mortars by weight proportion, obtain slurry density 1.620 grams per milliliters, viscosity 282cp/25 ℃.
Embodiment 2 preparation 1000g wire cutting liquids
Take by weighing 939 gram PEG200,12 gram polyacrylic acid, 14 gram polymaleic anhydride, 32 gram Tetramethylammonium hydroxide, 2.5 gram polymethyl siloxanes, 0.5 gram benzotriazole.
12 gram polyacrylic acid and 14 gram polymaleic anhydride are slowly joined among the 939 gram PEG200, stirred 30 minutes; Then 32 gram tetraethyl ammonium hydroxides slowly are added drop-wise among the PEG200, continue to stir, when 32 gram tetraethyl ammonium hydroxides are all dropwised, continue to stir and finished in 30 minutes, add 2.5 gram polymethyl siloxanes and 0.5 gram benzotriazole, continue to stir and finished in 30 minutes, obtain wire cutting liquid.
With the cutting liquid for preparing, with 1200 model SiC be 53: 47 preparation cutting mortars by weight proportion, obtain slurry density 1.620 grams per milliliters, viscosity 307cp/25 ℃.
Embodiment 3 preparation 1000g wire cutting liquids
Take by weighing 947.2 gram PEG200,10 gram polyacrylic acid, 11.8 polymaleic anhydride, 14 gram Tetramethylammonium hydroxide, 14 gram tetraethyl ammonium hydroxides, the poly-ethylsiloxane of 2.5 grams, 0.5 gram methyl benzotriazazole
10 gram polyacrylic acid and 11.8 gram polymaleic anhydride are slowly joined among the 947.2 gram PEG200, stirred 30 minutes; Slowly be added drop-wise to 14 gram Tetramethylammonium hydroxide and 14 gram tetraethyl ammonium hydroxides among the PEG200 then, continue to stir, when 14 gram Tetramethylammonium hydroxide and 14 gram tetraethyl ammonium hydroxides are all dropwised, continue to stir and finished in 30 minutes, add poly-ethylsiloxane of 2.5 grams and 0.5 gram methyl benzotriazazole, continue to stir and finished in 30 minutes, obtain wire cutting liquid.
With the cutting liquid for preparing, with 1200 model SiC be 53: 47 preparation cutting mortars by weight proportion, obtain slurry density 1.620 grams per milliliters, viscosity 302cp/25 ℃.
Embodiment 4 preparation 1000g wire cutting liquids
Take by weighing 940 gram PEG100,12 gram polystyrolsulfon acids, 14.5 gram polyalkenyl sulfonic acid, 30.5 gram benzyltrimethylammonium hydroxides, the poly-ethylsiloxane of 2.5 grams, 0.5 gram benzotriazole.
12 gram polystyrolsulfon acids and 14.5 gram polyalkenyl sulfonic acid are slowly joined among the 940 gram PEG100, stirred 30 minutes; Slowly be added drop-wise to 30.5 gram benzyltrimethylammonium hydroxides among the PEG100 then, continue to stir, when whole 30.5 gram benzyltrimethylammonium hydroxides are dropwised, continue to stir and finished in 30 minutes, add poly-ethylsiloxane of 2.5 grams and 0.5 gram benzotriazole, continue to stir and finished in 30 minutes, obtain wire cutting liquid.
With the cutting liquid for preparing, with 1200 model SiC be 53: 47 preparation cutting mortars by weight proportion, obtain slurry density 1.620 grams per milliliters, viscosity 240cp/25 ℃.
Embodiment 5 preparation 1000g wire cutting liquids
Take by weighing 959.6 gram PEG600,8 gram polymethyl acrylic acid, 8 gram polymaleic anhydride, 10 gram Tetramethylammonium hydroxide, 12 gram tetraethyl ammonium hydroxides, 1 gram methylsiloxane, 1 gram polymethy ethylsiloxane, 0.25 gram benzotriazole, 0.15 gram 4-carboxy benzotriazole
8 gram polymethyl acrylic acid and 8 gram polymaleic anhydride are slowly joined among the 959.6 gram PEG600, stirred 30 minutes; Slowly be added drop-wise to 10 gram Tetramethylammonium hydroxide and 12 gram tetraethyl ammonium hydroxides among the PEG600 then, continue to stir, when whole 10 gram Tetramethylammonium hydroxide and 12 gram tetraethyl ammonium hydroxides are dropwised, continue to stir and finished in 30 minutes, add 1 gram methylsiloxane, 1 gram polymethy ethylsiloxane, 0.25 gram benzotriazole, 0.15 gram 4-carboxy benzotriazole continues to stir and finished in 30 minutes, obtains wire cutting liquid.
With the cutting liquid for preparing, with 1200 model SiC be 53: 47 preparation cutting mortars by weight proportion, obtain slurry density 1.620 grams per milliliters, viscosity 342cp/25 ℃.
Embodiment 6 preparation 1000g wire cutting liquids
Take by weighing 945 gram PEG100, the poly-ethylacrylic acid of 22 grams, 30 gram TPAOH, the poly-propyl-siloxane of 1.5 grams, the poly-butyl siloxanes of 1 gram, 0.5 gram benzotriazole.
The poly-ethyl propylene slow acid of 22 grams is joined among the 945 gram PEG100, stirred 30 minutes; Slowly be added drop-wise to 30 gram TPAOH among the PEG100 then, continue to stir, when whole 30 gram TPAOH are dropwised, continue to stir and finished in 30 minutes, add the poly-propyl-siloxane of 1.5 grams, poly-butyl siloxanes of 1 gram and 0.5 gram benzotriazole continue to stir and finished in 30 minutes, obtain wire cutting liquid.
With the cutting liquid for preparing, with 1200 model SiC be 53: 47 preparation cutting mortars by weight proportion, obtain slurry density 1.620 grams per milliliters, viscosity 289cp/25 ℃.
Embodiment 7 preparation 1000g wire cutting liquids
Take by weighing 949 gram PEG200,20 gram polymaleic anhydride, 28 gram TBAH, 2.5 gram polydimethylsiloxanes, 0.5 gram benzotriazole.
20 gram polymaleic anhydride are slowly joined among the 949 gram PEG200, stirred 30 minutes; Slowly be added drop-wise to 28 gram TBAH among the PEG200 then, continue to stir, when 28 gram TBAH are all dropwised, continue to stir and finished in 30 minutes, add 2.5 gram polydimethylsiloxanes and 0.5 gram benzotriazole, continue to stir and finished in 30 minutes, obtain wire cutting liquid.
With the cutting liquid for preparing, with 1200 model SiC be 53: 47 preparation cutting mortars by weight proportion, obtain slurry density 1.620 grams per milliliters, viscosity 325cp/25 ℃.
Effect embodiment
Use same amount embodiment 2 to prepare mortar with existing market cutting liquid and leave standstill comparison, observe the settling height of SiC, the result is as shown in table 1.
The settling height of table 1, different times SiC
| Left standstill 1 day | Left standstill 3 days | Left standstill 5 days | Left standstill 7 days | Again rock | |
| Embodiment 2 | 6.2cm | 5.6cm | 4.5cm | 4.1cm | SiC disperses again |
| Market cutting liquid | 5.4cm | 3.8cm | 2.2cm | 2cm | 2cm |
From table data as can be seen, cutting liquor ratio of the present invention is generally cut liquid dispersive ability better more enduringly, extraordinary stability, and redispersibility is very good.
Claims (13)
1. wire cutting liquid that is used for solar silicon wafers, it comprises: polyoxyethylene glycol, dispersion agent, tensio-active agent, defoamer and metal corrosion inhibitor.
2. cutting liquid as claimed in claim 1 is characterized in that: the mass percentage content of described polyoxyethylene glycol is 60%～95%; The mass percentage content of described water is 0.5%～8%; The mass percentage content of described dispersion agent is 0.1%～20%; The mass percentage content of described tensio-active agent is 0.1%～20%; The mass percentage content of described defoamer is 0.1%～3%; The mass percentage content of described metal corrosion inhibitor is 0.1%～1%.
3. cutting liquid as claimed in claim 1 is characterized in that: the molecular weight of described polyoxyethylene glycol is 100-600.
4. cutting liquid as claimed in claim 3 is characterized in that: the molecular weight of described polyoxyethylene glycol is 200-300.
5. cutting liquid as claimed in claim 4 is characterized in that: the molecular weight of described polyoxyethylene glycol is 200.
6. cutting liquid as claimed in claim 1 is characterized in that: described dispersion agent is poly-organic carboxyl acid class dispersion agent.
7. cutting liquid as claimed in claim 6 is characterized in that: described dispersion agent is selected from polyacrylic acid, polymethyl acrylic acid, poly-ethylacrylic acid, polyalkenyl sulfonic acid, polystyrolsulfon acid, one or more in the polymaleic anhydride.
8. cutting liquid as claimed in claim 1 is characterized in that: described tensio-active agent is selected from one or more in Tetramethylammonium hydroxide, tetraethyl ammonium hydroxide, TPAOH, TBAH and the benzyltrimethylammonium hydroxide.
9. cutting liquid as claimed in claim 1 is characterized in that: described defoamer is selected from one or more in polymethyl siloxane, poly-ethylsiloxane, poly-propyl-siloxane, poly-butyl siloxanes, polymethy ethylsiloxane and the polydimethylsiloxane.
10. cutting liquid as claimed in claim 1 is characterized in that: described metal corrosion inhibitor is selected from one or more in phenols, carboxylic-acid, carboxylic acid esters and the anhydrides.
11. cutting liquid as claimed in claim 10 is characterized in that: described phenols is selected from phenol, 1, one or more in 2-dihydroxyl phenol, para hydroxybenzene phenol and the pyrogallol; Described carboxylic-acid is selected from one or more in phenylformic acid, para-amino benzoic acid, phthalic acid and the gallic acid; Described carboxylic acid esters is selected from methyl p-aminobenzoate, Methyl Benzene-o-dicarboxylate and/or Tenox PG; Described anhydrides is diacetyl oxide and/or caproic anhydride.
12. cutting liquid as claimed in claim 10 is characterized in that: described metal corrosion inhibitor is selected from one or more in benzotriazole, methyl benzotriazazole and the 4-carboxy benzotriazole.
13. cutting liquid as claimed in claim 2 is characterized in that: the mass percentage content of described water is 5%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910199093.4A CN102071090B (en) | 2009-11-20 | 2009-11-20 | Wire cutting solution for solar silicon slice |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910199093.4A CN102071090B (en) | 2009-11-20 | 2009-11-20 | Wire cutting solution for solar silicon slice |
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| CN102071090A true CN102071090A (en) | 2011-05-25 |
| CN102071090B CN102071090B (en) | 2014-12-03 |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102321497A (en) * | 2011-08-29 | 2012-01-18 | 江西赛维Ldk太阳能高科技有限公司 | Solar silicon slice cutting liquid |
| CN102784977A (en) * | 2012-07-31 | 2012-11-21 | 江南大学 | Silicon crystal line cutting fluid |
| CN102851109A (en) * | 2012-09-21 | 2013-01-02 | 蒙特集团（香港）有限公司 | Cooling liquid for diamond cutting line to cut solar silicon chips |
| CN103184093A (en) * | 2011-12-29 | 2013-07-03 | 辽宁奥克化学股份有限公司 | Cutting liquid used for sapphire cutting by diamond wire |
| CN103597585A (en) * | 2011-10-24 | 2014-02-19 | 帕莱斯化学株式会社 | Water-soluble cutting fluid for fixed abrasive grain wire saw, cutting method using same, and recycling method therefor |
| CN104962351A (en) * | 2015-06-10 | 2015-10-07 | 柳州科尔特锻造机械有限公司 | Wheel hub forging and stamping oil preparation method |
| CN106222756A (en) * | 2016-09-30 | 2016-12-14 | 杭州飞鹿新能源科技有限公司 | Additive and application process thereof for diamond wire cutting fine-hair maring using monocrystalline silicon slice |
| CN108949303A (en) * | 2018-08-30 | 2018-12-07 | 江苏欧仕达润滑油有限公司 | A kind of solar silicon wafers cutting fluid and preparation method thereof |
| CN109652193A (en) * | 2019-01-25 | 2019-04-19 | 广州科卢斯流体科技有限公司 | A kind of metastable type semiconductor Buddha's warrior attendant wire cutting liquid |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1618936A (en) * | 2004-09-30 | 2005-05-25 | 刘玉岭 | Wire cutting liquid of semiconductor material |
| CN101560430A (en) * | 2009-05-27 | 2009-10-21 | 中南大学 | Fully synthetic cutting fluid |
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2009
- 2009-11-20 CN CN200910199093.4A patent/CN102071090B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1618936A (en) * | 2004-09-30 | 2005-05-25 | 刘玉岭 | Wire cutting liquid of semiconductor material |
| CN101560430A (en) * | 2009-05-27 | 2009-10-21 | 中南大学 | Fully synthetic cutting fluid |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102321497B (en) * | 2011-08-29 | 2014-02-05 | 江西赛维Ldk太阳能高科技有限公司 | Solar silicon slice cutting liquid |
| CN102321497A (en) * | 2011-08-29 | 2012-01-18 | 江西赛维Ldk太阳能高科技有限公司 | Solar silicon slice cutting liquid |
| CN103597585B (en) * | 2011-10-24 | 2016-10-19 | 帕莱斯化学株式会社 | Fixing abrasive grains scroll saw water solublity cutting liquid, the cutting method using it and recovery method thereof |
| CN103597585A (en) * | 2011-10-24 | 2014-02-19 | 帕莱斯化学株式会社 | Water-soluble cutting fluid for fixed abrasive grain wire saw, cutting method using same, and recycling method therefor |
| CN103184093A (en) * | 2011-12-29 | 2013-07-03 | 辽宁奥克化学股份有限公司 | Cutting liquid used for sapphire cutting by diamond wire |
| CN103184093B (en) * | 2011-12-29 | 2015-02-04 | 辽宁奥克化学股份有限公司 | Cutting liquid used for sapphire cutting by diamond wire |
| CN102784977A (en) * | 2012-07-31 | 2012-11-21 | 江南大学 | Silicon crystal line cutting fluid |
| CN102851109A (en) * | 2012-09-21 | 2013-01-02 | 蒙特集团（香港）有限公司 | Cooling liquid for diamond cutting line to cut solar silicon chips |
| CN102851109B (en) * | 2012-09-21 | 2014-03-19 | 凡登（常州）新型金属材料技术有限公司 | Cooling liquid for diamond cutting line to cut solar silicon chips |
| CN104962351A (en) * | 2015-06-10 | 2015-10-07 | 柳州科尔特锻造机械有限公司 | Wheel hub forging and stamping oil preparation method |
| CN106222756A (en) * | 2016-09-30 | 2016-12-14 | 杭州飞鹿新能源科技有限公司 | Additive and application process thereof for diamond wire cutting fine-hair maring using monocrystalline silicon slice |
| CN108949303A (en) * | 2018-08-30 | 2018-12-07 | 江苏欧仕达润滑油有限公司 | A kind of solar silicon wafers cutting fluid and preparation method thereof |
| CN109652193A (en) * | 2019-01-25 | 2019-04-19 | 广州科卢斯流体科技有限公司 | A kind of metastable type semiconductor Buddha's warrior attendant wire cutting liquid |
| CN109652193B (en) * | 2019-01-25 | 2021-10-08 | 广州科卢斯流体科技有限公司 | Metastable-setting semiconductor diamond wire cutting fluid |
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