CN100560702C - The wire cutting liquid of semiconductor material - Google Patents
The wire cutting liquid of semiconductor material Download PDFInfo
- Publication number
- CN100560702C CN100560702C CNB2004100723011A CN200410072301A CN100560702C CN 100560702 C CN100560702 C CN 100560702C CN B2004100723011 A CNB2004100723011 A CN B2004100723011A CN 200410072301 A CN200410072301 A CN 200410072301A CN 100560702 C CN100560702 C CN 100560702C
- Authority
- CN
- China
- Prior art keywords
- wire cutting
- cutting liquid
- silicon chip
- semiconductor material
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention relates to a kind of wire cutting liquid of semiconductor material, its composition and weight % are than composed as follows: polyoxyethylene glycol 10-10000:35-90, amine alkali: 8-30, permeate agent: 1-5, ether alcohol class promoting agent: 0.5-5, sequestrant: 0.5-5, deionized water: 0-55.Advantage of the present invention is: 1, will have neutrality or acid wire cutting liquid now and be improved to the alkaline wire cutting liquid that has with silicon generation chemical action, and can avoid the acid corrosion of equipment and reduce the scroll saw outage.2, effectively solved the sedimentary again problem of smear metal and pelletizing powder, avoided the chemical bonding adsorption phenomena of silicon chip surface, and be convenient to the cleaning and the following process of silicon chip.3, infiltration, lubricated and cooling effect is remarkable, surface damage, mechanical stress, thermal stresses and the metal ion of gained section obviously reduces the pollution of silicon chip.4, cost value is lower, helps the substituting import one wire cutting liquid.
Description
Technical field
The invention belongs to cutting liquid, particularly relate to a kind of wire cutting liquid of semiconductor material.
Background technology
In the crystal bar slicing processes, because the effect of strong mechanical force, the silicon chip edge occurs fine fisssure easily, collapses limit and focal point of stress, also there is the uneven and damage of stress distribution in silicon chip surface, and these defectives are to cause IC to produce secondary defect such as a large amount of slip lines, extension fault, slip dislocation, microdefect and silicon chip, the easy disruptive important factor of chip in making.
The powerful silicon monocrystalline substrate wire cutting technology of the development in recent years impetus silicon chip surface lesion depths, surface tissue consistence and production efficiency etc. many aspect, compare the advantage that has shown that it is huge with the internal diameter cutting technique, but have aforesaid damage, mechanical stress and thermal stress issues too, and the surface is more coarse also more outstanding than internal diameter cutting technique.
The damage that exists in the crystal bar section and the problem of stress have become the obstacle that microelectronics industry continues development, the applicant thinks through studying for a long period of time, what overcome scroll saw in the wire cutting technology rocks, improves its stability, silicon chip surface damages, particularly the more coarse defective in surface has vital role to reducing, but the wire cutting liquid of selection excellent property reduces or avoid the important channel of the problems referred to above especially.The wire cutting liquid of excellent property can make strong uneven mechanical effect change uniform and stable chemical machinery effect into, thereby the mechanical stress of effectively reducing, the more effective friction that reduces the wire cutting liquid and the silicon rod of pulp-like simultaneously, not only can reduce mechanical stress, also effective distribute heat and reduce thermal stresses.
The external at present moulding product that has wire cutting liquid, but it is formed all unexposed and belongs to secrecy technology.Only analyzed following result from the result of use of product commonly used: U.S. HGS518-X product, about the low about 6-7 of pH value, proportion 1.16g/cm3.Equally with other several U.S. product be oiliness, viscosity is big, perviousness and metal ion removal power shortcoming, surface adsorption more seriously is difficult to clean, piebald appears in the silicon chip surface after causing cleaning.In addition, price is expensive.It is acid that several main productss of Japan are, and chopper and slicer had corrosive nature, and silicon chip is not had chemical action, can not embody the chemical machinery action effect, can not well solve the damage that mechanical effect causes and the problem of stress.
Summary of the invention
The present invention is in order to solve the problem effect unfavorable technical problem of known wire cutting liquid in the silicon chip surface damage, mechanical stress and the thermal stresses that overcome the wire cutting technology existence, and disclose that a kind of chemical action is strong, easy cleaning, good heat dissipation effect, good penetration and lubrication are arranged, can obviously reduce the wire cutting liquid of the silicon chip surface affected layer degree of depth and stress and low-cost semiconductor material.
The composition of wire cutting liquid of the present invention and weight % are than composed as follows:
Polyoxyethylene glycol 10-10000 35-90,
Amine alkali 8-30,
The secondary alkyl ethoxylated 1-5 of permeate agent polyoxyethylene,
Ether alcohol class promoting agent 0.5-5,
Sequestrant FA/O 0.5-5,
Deionized water 0-55.
Described amine alkali is many hydroxyls polyamines class organic bases hydroxyethylethylene diamine or trolamine.
Described ether alcohol class promoting agent is a kind of of tween O п-7, O п-10.
The effect of each component is respectively among the present invention:
Polyoxyethylene glycol is as the suitable dispersion agent of viscosity, can be adsorbed in solid particles surface and produces sufficiently high barrier potential and electricity is built, and it is near each other, coalescent not only to hinder particle, also can impel solid particulate group cracking to scatter, and can guarantee the suspension property of wire cutting liquid.Simultaneously, when this dispersion agent is subjected to mechanical force microfracture to occur in solid particulate group, can penetrate into and remove to align the slabbing action that forms chemical energy in solid particles surface in the microscopic checks, dispersion agent continues to help to the depths expansion along the crack raising of cutting efficiency.
Amine alkali is a kind of organic alcohol, makes wire cutting liquid be slight alkalinity, can with silicon generation chemical reaction, suc as formula:
Hydroxide ion and pasc reaction that amine alkali produces act on the surface to be machined of silicon chip uniformly, can make silicon chip residue affected layer little, have reduced back operation amount of finish, help reducing production costs.The alkalescence wire cutting liquid has passivation to metal, avoids wire cutting liquid etching apparatus and scroll saw, reduces outage.
Permeate agent has lubricant concurrently, seepage force≤50 second, good foaming power and froth breaking power are arranged, can reduce the surface tension of wire cutting liquid greatly, make this wire cutting liquid have good penetration, make wire cutting liquid be easy to be penetrated between scroll saw and the silicon rod, have the friction effect that reduces between slurry, smear metal and the cutting surface, effectively reduce physical abuse, improve the utilization ratio of crystal bar.Good penetration impels wire cutting liquid in time to act on uniformly between scroll saw and the silicon rod, guarantees the continuity and the consistence of its chemical action, and can give full play to the cooling effect of wire cutting liquid, prevents the accumulation of silicon chip surface thermal stresses.The metal ion that also can prevent scroll saw simultaneously spreads to silicon chip surface under the situation of temperature rise, reduces the pollution of metal ion to silicon chip.
Ether alcohol class promoting agent is a tween, have the lubrication that strengthens wire cutting liquid, smear metal and pelletizing powder can be held up, active agent molecule is replaced be adsorbed in silicon chip surface, and can stop smear metal and pelletizing powder to deposit again, help the cleaning of silicon chip.
The deionized water dissolving molecular weight is solid-state polyoxyethylene glycol more than 400-500.
Sequestrant FA/O is the performance with good removal metal ion of Hebei University of Technology's development and production, especially can obviously remove the iron ion that scroll saw produces.
Beneficial effect of the present invention and advantage are:
1, will have neutrality or acid wire cutting liquid now and be improved to the alkaline wire cutting liquid that has with silicon generation chemical action, make the mechanical effect single in the section change uniform and stable chemical machinery effect into, thereby effectively solved the stress problem in the slice process and reduce damage.Alkaline wire cutting liquid can be avoided the acid corrosion of equipment and reduce the scroll saw outage simultaneously.
2, effectively solved the sedimentary again problem of smear metal and pelletizing powder, avoided the chemical bonding adsorption phenomena of silicon chip surface, and be convenient to the cleaning and the following process of silicon chip.
3, infiltration, lubricated and cooling effect is remarkable, surface damage, mechanical stress, thermal stresses and the metal ion of gained section obviously reduces the pollution of silicon chip.
4, cost value is lower, helps the substituting import one wire cutting liquid.
Embodiment
Further specify the present invention with embodiment below.
Embodiment 1: preparation 1000g wire cutting liquid.
Taking polyethylene glycol 200 (PEG200) 880g, amine alkali-hydroxyethylethylene diamine 80g, secondary alkyl ethoxylated (HJFC) 15g of permeate agent-polyoxyethylene, ether alcohol class promoting agent-O п-7 15g, sequestrant-FA/O 10g.
In the Macrogol 200 under the continuously stirring, slowly add the secondary alkyl ethoxylated (HJFC) of hydroxyethylethylene diamine, polyoxyethylene, O п-7 and the FA/O of above-mentioned value successively, be stirred to the even 1000g wire cutting liquid that gets.
The polyoxyethylene glycol of present embodiment is a lower molecular weight, and the gained wire cutting liquid is applicable to the cutting of semiconductor material.
Embodiment 2: preparation 1000g wire cutting liquid.
Get Polyethylene Glycol-600 (PEG600) 840g that is paste, amine alkali-trolamine 100g, secondary alkyl ethoxylated (HJFC) 20g of permeate agent-polyoxyethylene, ether alcohol class promoting agent-O п-10 25g, sequestrant-FA/O 15g.
Melt the Polyethylene Glycol-600 (PEG600) of paste under 40-60 ℃ of temperature, and under keeping warm mode, stir, slowly add the secondary alkyl ethoxylated (HJFC) of trolamine, polyoxyethylene, O п-7 and the FA/O of above-mentioned value in the continuously stirring successively, be stirred to the even 1000g wire cutting liquid that gets.
The polyoxyethylene glycol of present embodiment still is a lower molecular weight, and the gained wire cutting liquid is applicable to the cutting of semiconductor material.
Embodiment 3: preparation 2000g wire cutting liquid.
Get solid-state cetomacrogol 1000 0 (PEG10000) 900g, deionized water 600g, amine alkali-trolamine 400g, secondary alkyl ethoxylated (HJFC) 40g of permeate agent-polyoxyethylene, ether alcohol class promoting agent-peregal 0-2030g, sequestrant-FA/O 30g.
By the solid-state cetomacrogol 1000 0 (PEG10000) of deionized water dissolving, slowly add the secondary alkyl ethoxylated (HJFC) of trolamine, polyoxyethylene, peregal 0-20 and the FA/O of above-mentioned value in the cetomacrogol 1000 0 (PEG10000) under continuously stirring successively, be stirred to the even 2000g wire cutting liquid that gets.
The polyoxyethylene glycol of present embodiment is a high molecular, and the gained wire cutting liquid also is applicable to the cutting of high hardness material, as diamond except that the cutting that is applicable to semiconductor material.
Claims (3)
1, the wire cutting liquid of semiconductor material is characterized in that the composition of wire cutting liquid and weight % are than composed as follows:
Polyoxyethylene glycol 10-10000 35-90,
Amine alkali 8-30,
The secondary alkyl ethoxylated 1-5 of permeate agent polyoxyethylene,
Ether alcohol class promoting agent 0.5-5,
Sequestrant FA/O 0.5-5,
Deionized water 0-55.
2, wire cutting liquid according to claim 1 is characterized in that: described amine alkali is many hydroxyls polyamines class organic bases hydroxyethylethylene diamine or trolamine.
3, wire cutting liquid according to claim 1 is characterized in that: described ether alcohol class promoting agent is a kind of of tween O п-7, O п-10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100723011A CN100560702C (en) | 2004-09-30 | 2004-09-30 | The wire cutting liquid of semiconductor material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100723011A CN100560702C (en) | 2004-09-30 | 2004-09-30 | The wire cutting liquid of semiconductor material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1618936A CN1618936A (en) | 2005-05-25 |
| CN100560702C true CN100560702C (en) | 2009-11-18 |
Family
ID=34765197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100723011A Expired - Fee Related CN100560702C (en) | 2004-09-30 | 2004-09-30 | The wire cutting liquid of semiconductor material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100560702C (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102071090B (en) * | 2009-11-20 | 2014-12-03 | 安集微电子（上海）有限公司 | Wire cutting solution for solar silicon slice |
| CN102093925B (en) * | 2009-12-11 | 2014-08-20 | 安集微电子（上海）有限公司 | Solar silicon wafer cutting liquid |
| CN102344776A (en) * | 2010-08-06 | 2012-02-08 | 安集微电子（上海）有限公司 | Cutting fluid for cutting of scroll saw |
| CN102229212A (en) * | 2010-08-23 | 2011-11-02 | 蒙特集团（香港）有限公司 | Wet silicon carbide sand for solar silicon chip wire cutting |
| CN102229209B (en) * | 2010-09-16 | 2014-07-23 | 蒙特集团（香港）有限公司 | Method for using non-standard sand aggregates generated in manufacturing process of silicon carbide sand aggregates in solar silicon wafer cutting mortar |
| CN101935576B (en) * | 2010-10-09 | 2013-03-13 | 辽宁奥克化学股份有限公司 | Cutting fluid with anti-oxidation performance, preparation method and application thereof |
| CN102784977A (en) * | 2012-07-31 | 2012-11-21 | 江南大学 | Silicon crystal line cutting fluid |
| CN103881798A (en) * | 2012-12-19 | 2014-06-25 | 上海工程技术大学 | Water-soluble silicon cutting fluid and its application thereof |
| CN108659915A (en) * | 2017-03-28 | 2018-10-16 | 常州协鑫光伏科技有限公司 | Silicon chip cutting anti-settling agent and mortar cutting fluid |
| CN108531283A (en) * | 2018-06-12 | 2018-09-14 | 山东大海新能源发展有限公司 | A kind of silicon wafer cutting fluid |
| CN109262869B (en) * | 2018-10-26 | 2020-11-03 | 晶科能源有限公司 | Slicing auxiliary liquid and slicing method for photovoltaic slices |
| CN109591196A (en) * | 2018-11-30 | 2019-04-09 | 江苏科技大学 | Mechanochemistry scroll saw composite cutting method and cutting liquid |
| CN115678656A (en) * | 2022-09-26 | 2023-02-03 | 晶科能源股份有限公司 | Silicon crystal wire cutting liquid and preparation method thereof |
| CN115851363B (en) * | 2022-12-08 | 2024-01-05 | 广州亦盛环保科技有限公司 | Antistatic semiconductor wafer cutting fluid and preparation method thereof |
-
2004
- 2004-09-30 CN CNB2004100723011A patent/CN100560702C/en not_active Expired - Fee Related
Non-Patent Citations (2)
| Title |
|---|
| 硅单晶片研磨液的研究. 刘玉岭等.稀有金属，第25卷第6期. 2001 |
| 硅单晶片研磨液的研究. 刘玉岭等.稀有金属，第25卷第6期. 2001 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1618936A (en) | 2005-05-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100560702C (en) | The wire cutting liquid of semiconductor material | |
| CN100363477C (en) | Semiconductor silicon material water base cutting liquid | |
| CN113549488B (en) | Large-size silicon wafer diamond wire cutting liquid | |
| CN103396875A (en) | Cooling liquid for diamond-wire cutting equipment, and preparation method thereof | |
| CN101935576B (en) | Cutting fluid with anti-oxidation performance, preparation method and application thereof | |
| CN108559602B (en) | Water-based diamond wire silicon wafer cutting fluid | |
| CN108034486B (en) | High-lubrication self-defoaming easy-cleaning environment-friendly oily wire cutting fluid | |
| CN102071090B (en) | Wire cutting solution for solar silicon slice | |
| TW201043690A (en) | Method of cleaning semiconductor wafers | |
| CN113462458A (en) | Efficient diamond wire silicon wafer cutting fluid | |
| CN102041138B (en) | Additive for improving utilization ratio of silicon crystal line cutting mortar as well as preparation method and application method of addictive | |
| CN103710705A (en) | Additive for acidic texturing liquid of polycrystalline silicon wafers and application thereof | |
| CN102041137A (en) | Molybdate additive and polycrystalline silicon or monocrystalline silicon cutting fluid containing same | |
| CN102352278A (en) | Special cutting fluid for diamond wire | |
| CN103952225A (en) | Aqueous dissociating abrasive cutting fluid used for cutting solar silicon wafer and its preparation method | |
| CN105985852A (en) | Novel diamond abrasive wire cutting fluid | |
| CN105038607A (en) | Effective sapphire fine grinding method and fine grinding solution | |
| Luo et al. | Synergy between dodecylbenzenesulfonic acid and isomeric alcohol polyoxyethylene ether for nano-scale scratch reduction in copper chemical mechanical polishing | |
| KR20130001210A (en) | Water-soluble cutting solution for fixed abrasive wire saw, method for cutting ingot using same, method for recycling the solution, and wafer produced by cutting | |
| CN113136255A (en) | Cooling liquid for diamond wire cutting solar silicon wafer and preparation method | |
| CN105273823B (en) | A kind of multi-thread silicon chip cutting water-soluble metalworking liquid and preparation method thereof | |
| CN102784977A (en) | Silicon crystal line cutting fluid | |
| CN102260582A (en) | Water-based type wire-cutting liquid used for silicon chips | |
| CN103623935A (en) | High-purity silicon carbide recovery floatation agent and preparing method thereof | |
| CN101092584A (en) | High performance water typed edge-rounding agent in use for processing semiconductor wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091118 Termination date: 20091030 |