CN108531283A - A kind of silicon wafer cutting fluid - Google Patents
A kind of silicon wafer cutting fluid Download PDFInfo
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- CN108531283A CN108531283A CN201810603665.XA CN201810603665A CN108531283A CN 108531283 A CN108531283 A CN 108531283A CN 201810603665 A CN201810603665 A CN 201810603665A CN 108531283 A CN108531283 A CN 108531283A
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- China
- Prior art keywords
- parts
- silicon wafer
- cutting fluid
- chelating agent
- wafer cutting
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M173/00—Lubricating compositions containing more than 10% water
- C10M173/02—Lubricating compositions containing more than 10% water not containing mineral or fatty oils
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- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2207/00—Organic non-macromolecular hydrocarbon compounds containing hydrogen, carbon and oxygen as ingredients in lubricant compositions
- C10M2207/04—Ethers; Acetals; Ortho-esters; Ortho-carbonates
- C10M2207/046—Hydroxy ethers
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2209/00—Organic macromolecular compounds containing oxygen as ingredients in lubricant compositions
- C10M2209/10—Macromolecular compoundss obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C10M2209/103—Polyethers, i.e. containing di- or higher polyoxyalkylene groups
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2215/00—Organic non-macromolecular compounds containing nitrogen as ingredients in lubricant compositions
- C10M2215/02—Amines, e.g. polyalkylene polyamines; Quaternary amines
- C10M2215/04—Amines, e.g. polyalkylene polyamines; Quaternary amines having amino groups bound to acyclic or cycloaliphatic carbon atoms
- C10M2215/042—Amines, e.g. polyalkylene polyamines; Quaternary amines having amino groups bound to acyclic or cycloaliphatic carbon atoms containing hydroxy groups; Alkoxylated derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2215/00—Organic non-macromolecular compounds containing nitrogen as ingredients in lubricant compositions
- C10M2215/08—Amides
- C10M2215/082—Amides containing hydroxyl groups; Alkoxylated derivatives
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
- C10N2030/00—Specified physical or chemical properties which is improved by the additive characterising the lubricating composition, e.g. multifunctional additives
- C10N2030/04—Detergent property or dispersant property
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
- C10N2030/00—Specified physical or chemical properties which is improved by the additive characterising the lubricating composition, e.g. multifunctional additives
- C10N2030/06—Oiliness; Film-strength; Anti-wear; Resistance to extreme pressure
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Lubricants (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
This application discloses a kind of silicon wafer cutting fluids, are grouped as by following group in terms of parts by weight：10-30 parts of 30-50 parts of polyethylene glycol, 8-15 parts of diethylene glycol (DEG), 5-8 parts of triethanolamine, 15-20 parts of oleic acid diethanol amine, 2-5 parts of chelating agent FA/O and water.Dispersant uses polyethylene glycol and diethylene glycol (DEG) simultaneously in cutting fluid provided by the invention, the dispersion effect of suspended particulate is set to significantly improve, and reasonably optimizing configures other auxiliary reagents, makes silica flour be not easy to be attached to the surface of abrasive material silicon carbide, to improve cutting efficiency；In addition, the reasonable supplying of chelating agent FA/O obviously inhibits the reduction of silicon chip minority carrier life, the reasonable supplying of lubricant is reducing the abrasion that steel wire surface can also be reduced while silicon chip surface damage, to improve silicon chip yield rate and reduce steel wire breakage ratio.The present invention can significantly improve abrasive wire sawing efficiency, reduce production cost.
Description
Technical field
The present invention relates to silicon chip cutting technique fields, more particularly, to a kind of silicon wafer cutting fluid.
Background technology
Silicon chip is the basis of photovoltaic industry and semicon industry, and quality is to solar photoelectric transformation efficiency and semiconductor device
Part final product quality has a direct impact.Silicon chip cutting is a key procedure of silicon chip processing.Currently, silicon chip cutting technique mainly divides
For two kinds of mortar cutting and diamond wire saw cut.
Mortar cutting is the mortar that silicon chip carries abrasive material silicon carbide by cutting line (steel wire) supply, passes through abrasive material, cutting
Abrasive wear principle between line (steel wire) and silicon crystal realizes the cutting of silicon chip.Which can realize the cutting of multiple silicon chips,
Cutting efficiency is high.The cutting fluid and cutting technique of mortar cutting have a significant impact to cutting efficiency and chipping qualities.
It is more about the research of cutting fluid in the prior art, but there are still it is dispersed not enough, yield rate is low and cutting effect
The problems such as rate is low.
Invention content
The purpose of the present invention is to provide a kind of silicon wafer cutting fluid, which can effectively improve silicon chip
The dispersibility of suspended matter when yield rate, cutting efficiency and cutting.
Silicon wafer cutting fluid provided by the invention is grouped as by following group in terms of parts by weight：30-50 parts of polyethylene glycol
(dispersant), 8-15 parts of diethylene glycol (DEG) (dispersant), 5-8 parts of triethanolamine (pH adjusting agent), 15-20 parts of oleic acid diethanol amine
2-5 parts of (nonionic surfactant, lubricant), chelating agent FA/O and 10-30 parts of water (coolant).
Preferably, the silicon wafer cutting fluid is grouped as by following group in terms of parts by weight：40 parts of polyethylene glycol, diethylene glycol (DEG)
22 parts of 10 parts, 7.5 parts of triethanolamine, 17.5 parts of oleic acid diethanol amine, 3 parts of chelating agent FA/O and water.
In one embodiment, the silicon wafer cutting fluid is grouped as by following group in terms of parts by weight：Polyethylene glycol
28 parts of 30 parts, 15 parts of diethylene glycol (DEG), 5 parts of triethanolamine, 20 parts of oleic acid diethanol amine, FA/O2 parts of chelating agent and water.
In another embodiment, the silicon wafer cutting fluid is grouped as by following group in terms of parts by weight：Poly- second two
14 parts of 50 parts of alcohol, 8 parts of diethylene glycol (DEG), 8 parts of triethanolamine, 15 parts of oleic acid diethanol amine, FA/O5 parts of chelating agent and water.
Preferably, the water is deionized water.
Beneficial effects of the present invention are as follows：
Dispersant uses polyethylene glycol and diethylene glycol (DEG) simultaneously in cutting fluid provided by the invention, and the dispersion of suspended particulate is made to imitate
Fruit significantly improves, and reasonably optimizing configures other auxiliary reagents, and silica flour is made to be not easy to be attached to the surface of abrasive material silicon carbide, to
Improve cutting efficiency；In addition, the reasonable supplying of chelating agent FA/O obviously inhibits the reduction of silicon chip minority carrier life, lubricant
Rationally supplying is reducing the abrasion that steel wire surface can also be reduced while silicon chip surface damage, to improve silicon chip yield rate simultaneously
Reduce steel wire breakage ratio.The present invention can significantly improve abrasive wire sawing efficiency, reduce production cost.
Specific implementation mode
Experimental method used in following embodiments is conventional method unless otherwise specified.
The materials, reagents and the like used in the following examples is commercially available unless otherwise specified.
The instrument that silicon chip cutting uses in following embodiments is NTC PV1000.
Embodiment 1, a kind of silicon wafer cutting fluid
The silicon wafer cutting fluid of the present embodiment is grouped as by following group in terms of parts by weight：40 parts of polyethylene glycol, diethylene glycol (DEG)
22 parts of 10 parts, 7.5 parts of triethanolamine, 17.5 parts of oleic acid diethanol amine, 3 parts of chelating agent FA/O and deionized water.By above-mentioned raw materials
Mixing, ultrasonic disperse can uniformly be prepared.
Embodiment 2, a kind of silicon wafer cutting fluid
The silicon wafer cutting fluid of the present embodiment is grouped as by following group in terms of parts by weight：30 parts of polyethylene glycol, diethylene glycol (DEG)
28 parts of 15 parts, 5 parts of triethanolamine, 20 parts of oleic acid diethanol amine, 2 parts of chelating agent FA/O and deionized water.Above-mentioned raw materials are mixed
It closes, ultrasonic disperse can uniformly be prepared.
Embodiment 3, a kind of silicon wafer cutting fluid
The silicon wafer cutting fluid of the present embodiment is grouped as by following group in terms of parts by weight：50 parts of polyethylene glycol, diethylene glycol (DEG) 8
Part, 8 parts of triethanolamine, 15 parts of oleic acid diethanol amine, 5 parts of chelating agent FA/O and 14 parts of deionized water.Above-mentioned raw materials are mixed,
Ultrasonic disperse can uniformly be prepared.
Comparative example 1, a kind of silicon wafer cutting fluid
The silicon wafer cutting fluid of this comparative example is grouped as by following group in terms of parts by weight：50 parts of polyethylene glycol, three ethyl alcohol
22 parts of 7.5 parts of amine, 17.5 parts of oleic acid diethanol amine, 3 parts of chelating agent FA/O and deionized water.Above-mentioned raw materials are mixed, ultrasound point
Dissipating can uniformly be prepared.
Comparative example 2, a kind of silicon wafer cutting fluid
The silicon wafer cutting fluid of this comparative example is grouped as by following group in terms of parts by weight：40 parts of polyethylene glycol, diethylene glycol (DEG)
24 parts of 10 parts, 7.5 parts of triethanolamine, 17.5 parts of oleic acid diethanol amine, 1 part of chelating agent FA/O and deionized water.By above-mentioned raw materials
Mixing, ultrasonic disperse can uniformly be prepared.
Comparative example 3, a kind of silicon wafer cutting fluid
The silicon wafer cutting fluid of this comparative example is grouped as by following group in terms of parts by weight：40 parts of polyethylene glycol, diethylene glycol (DEG)
10 parts, 7.5 parts of triethanolamine, 10 parts of oleic acid diethanol amine and 3 parts of chelating agent FA/O, 25 parts of deionized waters.Above-mentioned raw materials are mixed
It closes, ultrasonic disperse can uniformly be prepared.
Embodiment 4, photovoltaic silicon wafer production method
Cutting fluid described in embodiment 1-3 and comparative example 1-3 is used respectively, produces photovoltaic silicon in the same manner
Piece, specially：Silicon material is cut using steel wire, obtains the photovoltaic silicon wafer, wherein the mortar used when the cutting is
Any of the above-described cutting fluid is respectively 1 according to weight proportion with silicon carbide：1 is uniformly mixed manufactured, described to be cut into unidirectionally
Cutting, when cutting linear speed of the steel wire be 1000m/min.The tension of the steel wire is 16N when the cutting.It is described to cut
The temperature cut is controlled at 25 DEG C.
As a result：The yield rate of embodiment 1-3 can reach 98% or more, and silicon chip surface slickness is good, wherein implement
Yield rate, the silicon chip minority carrier life of example 1 are slightly above embodiment 2 and 3；
Due to being not added with diethylene glycol (DEG) in comparative example 1, suspended matter dispersibility is substantially reduced, therefore yield rate is significantly lower than implementation
Example 1-3, only 85%；
Due to being not added with suitable chelating agent FA/O in comparative example 2, yield rate can reach 98% or more, but silicon chip lacks the sub- longevity
Life is significantly lower than embodiment 1-3 about 10%；
Due to being not added with suitable oleic acid diethanol amine in comparative example 3, silicon chip surface damage is more, and yield rate is only
60%, and steel wire cut after abrasion also obviously than serious in embodiment 1-3.
Above is only an example of the present application, it is not intended to limit this application.For those skilled in the art
For, the application can have various modifications and variations.It is all within spirit herein and principle made by any modification, equivalent
Replace, improve etc., it should be included within the scope of claims hereof.
Claims (6)
1. a kind of silicon wafer cutting fluid is grouped as by following group in terms of parts by weight：30-50 parts of polyethylene glycol, diethylene glycol (DEG) 8-
10-30 parts of 15 parts, 5-8 parts of triethanolamine, 15-20 parts of oleic acid diethanol amine, 2-5 parts of chelating agent FA/O and water.
2. silicon wafer cutting fluid as described in claim 1, it is characterised in that：It is grouped as by following group in terms of parts by weight：It is poly-
40 parts of ethylene glycol, 10 parts of diethylene glycol (DEG), 7.5 parts of triethanolamine, 17.5 parts of oleic acid diethanol amine, 3 parts of chelating agent FA/O and water 22
Part.
3. silicon wafer cutting fluid as described in claim 1, it is characterised in that：It is grouped as by following group in terms of parts by weight：It is poly-
28 parts of 30 parts of ethylene glycol, 15 parts of diethylene glycol (DEG), 5 parts of triethanolamine, 20 parts of oleic acid diethanol amine, 2 parts of chelating agent FA/O and water.
4. silicon wafer cutting fluid as described in claim 1, it is characterised in that：It is grouped as by following group in terms of parts by weight：It is poly-
14 parts of 50 parts of ethylene glycol, 8 parts of diethylene glycol (DEG), 8 parts of triethanolamine, 15 parts of oleic acid diethanol amine, 5 parts of chelating agent FA/O and water.
5. the silicon wafer cutting fluid as described in any in claim 1-4, it is characterised in that：The water is deionized water.
6. application of any silicon wafer cutting fluid in photovoltaic silicon wafer production in claim 1-5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810603665.XA CN108531283A (en) | 2018-06-12 | 2018-06-12 | A kind of silicon wafer cutting fluid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810603665.XA CN108531283A (en) | 2018-06-12 | 2018-06-12 | A kind of silicon wafer cutting fluid |
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| Publication Number | Publication Date |
|---|---|
| CN108531283A true CN108531283A (en) | 2018-09-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810603665.XA Pending CN108531283A (en) | 2018-06-12 | 2018-06-12 | A kind of silicon wafer cutting fluid |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1618936A (en) * | 2004-09-30 | 2005-05-25 | 刘玉岭 | Wire cutting liquid of semiconductor material |
| CN1858169A (en) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | Semiconductor silicon material water base cutting liquid |
| CN102766509A (en) * | 2012-08-09 | 2012-11-07 | 天津市明耀科技有限公司 | Novel solar energy silicon wafer cutting liquid |
| JP2012251025A (en) * | 2011-05-31 | 2012-12-20 | Sanyo Chem Ind Ltd | Water-containing cutting fluid composition and method for producing the same |
| CN103695145A (en) * | 2013-12-31 | 2014-04-02 | 镇江市港南电子有限公司 | Novel silicon wafer cutting liquid |
| CN104419507A (en) * | 2013-08-29 | 2015-03-18 | 章成荣 | Semiconductor cutting fluid |
| CN105273823A (en) * | 2015-11-27 | 2016-01-27 | 上海应用技术学院 | Multiline silicon wafer water soluble cutting liquid and preparation method thereof |
-
2018
- 2018-06-12 CN CN201810603665.XA patent/CN108531283A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1618936A (en) * | 2004-09-30 | 2005-05-25 | 刘玉岭 | Wire cutting liquid of semiconductor material |
| CN1858169A (en) * | 2006-05-31 | 2006-11-08 | 河北工业大学 | Semiconductor silicon material water base cutting liquid |
| JP2012251025A (en) * | 2011-05-31 | 2012-12-20 | Sanyo Chem Ind Ltd | Water-containing cutting fluid composition and method for producing the same |
| CN102766509A (en) * | 2012-08-09 | 2012-11-07 | 天津市明耀科技有限公司 | Novel solar energy silicon wafer cutting liquid |
| CN104419507A (en) * | 2013-08-29 | 2015-03-18 | 章成荣 | Semiconductor cutting fluid |
| CN103695145A (en) * | 2013-12-31 | 2014-04-02 | 镇江市港南电子有限公司 | Novel silicon wafer cutting liquid |
| CN105273823A (en) * | 2015-11-27 | 2016-01-27 | 上海应用技术学院 | Multiline silicon wafer water soluble cutting liquid and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 梁治齐等: "《功能性能表面活性剂》", 30 April 2002, 中国轻工业出版社 * |
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Application publication date: 20180914 |