CN102260582A - Water-based type wire-cutting liquid used for silicon chips - Google Patents
Water-based type wire-cutting liquid used for silicon chips Download PDFInfo
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- CN102260582A CN102260582A CN2011101744848A CN201110174484A CN102260582A CN 102260582 A CN102260582 A CN 102260582A CN 2011101744848 A CN2011101744848 A CN 2011101744848A CN 201110174484 A CN201110174484 A CN 201110174484A CN 102260582 A CN102260582 A CN 102260582A
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- polyvinyl alcohol
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Abstract
The invention provides a water-based type wire-cutting liquid used for silicon chips. The water-based type wire-cutting liquid used for silicon chips is made from the following raw materials of: by weight, 2-10 parts of polyvinyl alcohol, 0.05 part of benzotriazol and 89.95-98 parts of deionized water. The water-based cutting liquid requires low cost and is environmentally friendly. As the polyvinyl alcohol aqueous solution has good viscosity and dispersibility, blade materials have good dispersibility in the cutting liquid, and especially are easier for redispersion after settlement. By the use of the water-based cutting liquid provided by the invention, finished products have a high qualified rate and the silicon chips are easier to clean after being cut.
Description
Technical field
The present invention relates to a kind of composition of water base cutting liquid.Be applicable to the solar silicon wafers wire cutting technology.
Background technology
Along with the progressively shortage of global resources and running down of environment, sun power more and more is subjected to people as the energy efficient, cleaning and payes attention to, China is as the big producing country of global solar battery, and the fast development of photovoltaic industry makes the production link of silicon chip become extremely important.Production cost is low, high-performance, frivolous silicon chip efficiently are present photovoltaic industry market developing trend and requirement, and the effect of cutting liquid is particularly important in the silicon chip production process.Along with the development of cutting technique, also more and more higher to the requirement of cutting liquid.Cutting liquid should have suitable viscosity, good cooling performance, good performance of heat dissipation in the production of cutting silicon chip.Also should have good lubrication and excellent suspended dispersed performance simultaneously, effectively carry the sword material, and the power of reducing friction, satisfy the requirement of modern cutting technique better.The silicon chip that obtains easy cleaning and surface cleaning also is to the desired performance of cutting liquid.
Cutting liquid mainly is divided into oiliness cutting liquid and water-based cutting liquid two big classes, and wherein water-based cutting liquid is divided into water-soluble cutting liquid and water base cutting liquid again.Early stage cutting liquid is based on oiliness, and its principal feature is to be the non-aqueous system of main component with mineral oil, and sword material dispersion suspensions such as silicon carbide are wherein formed.Because mineral oil, organic solvent are inflammable, wafer cleans complexity etc., is being subjected to very big restriction aspect storage, safety, the environmental protection, and the processing of waste liquid also is a potential problem, is replaced by water-based cutting liquid substantially at present.The cutting liquid that generally uses both at home and abroad is water-soluble cutting liquid at present, its principal feature is to do main composition with water miscible polyethers organism, but moisture-free in these cutting liquid, adjustment by structure and prescription reaches required viscosity, product performance are stable, and cutting efficiency and yield rate are higher.But owing to the cost reason, water base cutting liquid more and more is subjected to people's favor.The principal feature of water base cutting liquid is a water content greater than 20% the soluble poly alcoxyl class or the polyalkols aqueous solution, forms by adding suitable additive.
It is the cutting liquid that main component is formed that patent of invention (application number 200410072301.1) " wire cutting liquid of semiconductor material " has disclosed with polyoxyethylene glycol, and characteristics provide a kind of and alkaline wire cutting liquid silicon generation chemical action, and water-content is at 0-55%.But this water base cutting liquid is because sword material dispersed relatively poor, fails popularization and application.Patent of invention (application number 200910304258.X) " wafer cutting liquid " is formulated by pure water, glycerine and silicate, characteristics are that main component changes pure water into by soft water, reduced the composition of hardness ions in the cutting liquid, thereby reduced the hard ions probability, particulate formation probability also significantly reduces in the cutting liquid, but because the use of silicate, the follow-up cleaning of silicon chip is made troubles.
Patent of invention (application number 201010500968.2) " a kind of cutting liquid with antioxidant property and its production and application " provides a kind of cutting liquid with antioxidant property, and water content is at 0-20%.Patent of invention (application number 201010500957.4) " water base cutting liquid of a kind of hard brittle material and its production and application " provides a kind of hard brittle material water base cutting liquid, and water content is at 4-20%.Patent of invention (application number 201010500973.3) " the water base cutting liquid of a kind of hard brittle material " provides a kind of water base cutting liquid of hard brittle material, and water content is at 5-20%.Though the cutting liquid of above-mentioned patent plays a role in field separately, stability is still waiting further raising, and water content is still lower simultaneously, and the production cost that is brought is higher.
The present invention passes through research with keen determination, has found the water base cutting liquid that is suitable for the cutting of silicon chip line, because this cutting fluid viscosity is moderate, the suspended dispersed of sword material is good, has high-band sand amount, and wafer does not have stria after the cutting; The wafer easy cleaning, the cutting loss is little, the yield rate height; Pollution-free, cost is low, characteristics such as good stability.
Summary of the invention
The objective of the invention is to study modest viscosity, sword material suspended dispersed good, have high-band sand amount, cutting back wafer and do not have stria, silicon chip line environmentally friendly and that cost is low cuts water base cutting liquid.
The technical scheme that realizes above-mentioned purpose is: a kind of aq. type cutting liquid that is used for silicon chip, form by following mass fraction proportion raw material:
Polyvinyl alcohol, 2-10 part,
Benzotriazole, 0.05 part,
Deionized water, 89.95-98 part;
The molecular weight of wherein said polyvinyl alcohol can be chosen between 10000-100000, also can be the mixing of several different molecular weight polyvinyl alcohol, and the molecular weight of preferred polyvinyl alcohol the best should be between 30000-80000.Usually the viscosity of the cutting liquid of existing non-water base polyethylene glycols is 35-50 mPaS(25 ℃), in order to reach the identical husky amount of band, need the aqueous solution of polyvinyl alcohol that proximate viscosity is arranged.The molecular weight of selected polyvinyl alcohol is too small, and the deionized water that is then added reduces, and unfavorable in the cost that reduces cutting liquid, if it is excessive to choose the molecular weight of polyvinyl alcohol, then the deionized water of Tian Jiaing is too much, brings sword material dispersiveness to descend.
The ratio that polyvinyl alcohol is shared, viscosity with polyvinyl alcohol water solution is benchmark, common viscosity should be 35-50 mPaS(25 ℃), less than this range of viscosities, will cause with after the sword material mixes, it is not enough to take sword material amount when cutting out of, polyvinyl alcohol water solution cause cutting speed in feet per minute to descend, if greater than above-mentioned range of viscosities, will cause with after the sword material mixes, it is too much to take sword material amount when cutting out of, and silicon chip is easy to generate cut.
In order to protect line of cut effectively, can suitably in the aqueous solution of polyvinyl alcohol, add a spot of anticorrosive agent such as benzotriazole, the consumption of benzotriazole is to be advisable less than 0.05% (w/w), and concentration is crossed senior general and is brought staining silicon chip.
The ratio of mixture that above-mentioned a kind of aq. type that is used for silicon chip cuts liquid and sword material (silicon carbide, cerium oxide) is in mass: 1:0.5~1.
Advantage of the present invention is when reducing cutting liquid cost greatly, because the organic solvent amount of using is seldom, so this aq. type cutting liquid is environmentally friendly, in addition, because the suspended dispersed of sword material is good, so after using this cutting liquid, wafer does not have stria; The wafer easy cleaning, the cutting loss is little, the yield rate height.
Embodiment
Introduce effect of the present invention below by specific embodiment.
Embodiment 1The line cutting aq. type cutting liquid of preparation 1200Kg silicon chip.
The polyvinyl alcohol of weighing 16Kg (molecular weight 100000) at first dissolves in the deionized water that temperature is about 80 ℃ of 783.6Kg, stir about 3 hours, treat that polyvinyl alcohol dissolves fully after, add the 0.4Kg benzotriazole, make the dispersion liquid of the line cutting of silicon chip.The silicon-carbide particles of weighing 400Kg, fully dispersed with stirring is 2 hours, promptly gets the line cutting aq. type cutting liquid of silicon chip.Aq. type cutting liquid density by above-mentioned prepared is 1.630g/mL, and viscosity is 42 mPaS(25 ℃).In order to investigate the dispersing property of silicon-carbide particles in dispersion liquid, the cutting liquid that makes is placed the colorimetric cylinder of 25mL, judge its dispersing property by observing the settled height of silicon carbide, it the results are shown in table 1.
Embodiment 2
Method by embodiment 1 is prepared, and the polyvinyl alcohol of weighing 80Kg (molecular weight 10000) dissolves in the deionized water that temperature is about 80 ℃ of 719.6Kg, stir about 3 hours, after treating that polyvinyl alcohol dissolves fully, add the 0.4Kg benzotriazole, make the dispersion liquid of the line cutting of silicon chip.The silicon-carbide particles of weighing 400Kg, fully dispersed with stirring is 2 hours, promptly gets the line cutting aq. type cutting liquid of silicon chip.Aq. type cutting liquid density by above-mentioned prepared is 1.615g/mL, and viscosity is 39 mPaS(25 ℃).In order to investigate the dispersing property of silicon-carbide particles in dispersion liquid, the cutting liquid that makes is placed the colorimetric cylinder of 25mL, judge its dispersing property by observing the settled height of silicon carbide, it the results are shown in table 1.
Embodiment 3
Method by embodiment 1 is prepared, the polyvinyl alcohol of weighing 60Kg (molecular weight 10000), the polyvinyl alcohol of 5Kg (molecular weight 100000), dissolve in the deionized water that temperature is about 80 ℃ of 734.6Kg, stir about 3 hours, after treating that polyvinyl alcohol dissolves fully, add the 0.4Kg benzotriazole, make the dispersion liquid of the line cutting of silicon chip.The silicon-carbide particles of weighing 400Kg, fully dispersed with stirring is 2 hours, promptly gets the line cutting aq. type cutting liquid of silicon chip.Aq. type cutting liquid density by above-mentioned prepared is 1.625g/mL, and viscosity is 45 mPaS(25 ℃).In order to investigate the dispersing property of silicon-carbide particles in dispersion liquid, the cutting liquid that makes is placed the colorimetric cylinder of 25mL, judge its dispersing property by observing the settled height of silicon carbide, it the results are shown in table 1.
Comparative example:
Use the silicon chip wire cutting liquid of existing market sale, be placed in the colorimetric cylinder of 25mL, judge its dispersing property by observing the settled height of silicon carbide, it the results are shown in table 1.
Result from table 1 as can be known, silicon-carbide particles can disperse in dispersion liquid of the present invention well, the aq. type silicon chip wire cutting liquid that makes of polyvinyl alcohol has good stability thus.
The height (cm) that silicon carbide sinks in the table 1 aq. type cutting liquid
? | Left standstill 1 day | Left standstill 3 days | Left standstill 5 days | Left standstill 7 days | Left standstill 9 days | Left standstill 10 days |
Embodiment 1 | 0.2 | 0.5 | 0.8 | 1.2 | 1.6 | 1.8 |
Embodiment 2 | 0.3 | 0.6 | 0.7 | 1.3 | 1.7 | 1.8 |
Embodiment 3 | 0.2 | 0.4 | 0.6 | 1.2 | 1.4 | 1.6 |
Comparative example | 0.1 | 0.3 | 0.6 | 1.0 | 1.4 | 1.6 |
Claims (5)
1. an aq. type that is used for silicon chip cuts liquid, it is characterized in that being made up of following mass fraction proportion raw material:
Polyvinyl alcohol, 2-10 part,
Benzotriazole, 0.05 part,
Deionized water, 89.95-98 part.
2. a kind of aq. type cutting liquid that is used for silicon chip according to claim 1, the molecular weight that it is characterized in that wherein said polyvinyl alcohol is 10000-100000, or the mixture of several different molecular weight polyvinyl alcohol.
3. a kind of aq. type cutting liquid that is used for silicon chip according to claim 1, the consumption that it is characterized in that wherein said benzotriazole is by percentage to the quality less than 0.05%.
4. a kind of aq. type cutting liquid that is used for silicon chip according to claim 2, the molecular weight that it is characterized in that wherein said polyvinyl alcohol is between the 30000-80000.
5. the using method of a kind of aq. type cutting liquid that is used for silicon chip according to claim 1 is characterized in that the ratio of itself and silicon carbide or cerium oxide is in mass: 1:0.5~1.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104118069A (en) * | 2014-07-25 | 2014-10-29 | 苏州晶樱光电科技有限公司 | Cutting technology for solar silicon slice |
CN115651742A (en) * | 2022-10-25 | 2023-01-31 | 常州大学 | Phosphating reaction type diamond wire drawing oil and preparation method and application thereof |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19852203A1 (en) * | 1998-11-12 | 2000-05-18 | Henkel Kgaa | Lubricant with solid particles with a particle size below 500 nm |
CN1405287A (en) * | 2001-09-07 | 2003-03-26 | 第一工业制药株式会社 | Non-combustible water-series cutting fluid composition and non-combustible water-series cutting fluid |
CN101636478A (en) * | 2007-02-26 | 2010-01-27 | 江陵大学校产学协力团 | The water-base cutting fluid that contains ceramic powder |
-
2011
- 2011-06-27 CN CN2011101744848A patent/CN102260582A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19852203A1 (en) * | 1998-11-12 | 2000-05-18 | Henkel Kgaa | Lubricant with solid particles with a particle size below 500 nm |
CN1405287A (en) * | 2001-09-07 | 2003-03-26 | 第一工业制药株式会社 | Non-combustible water-series cutting fluid composition and non-combustible water-series cutting fluid |
CN101636478A (en) * | 2007-02-26 | 2010-01-27 | 江陵大学校产学协力团 | The water-base cutting fluid that contains ceramic powder |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104118069A (en) * | 2014-07-25 | 2014-10-29 | 苏州晶樱光电科技有限公司 | Cutting technology for solar silicon slice |
CN115651742A (en) * | 2022-10-25 | 2023-01-31 | 常州大学 | Phosphating reaction type diamond wire drawing oil and preparation method and application thereof |
CN115651742B (en) * | 2022-10-25 | 2023-11-14 | 常州大学 | Phosphating reaction type diamond wire drawing oil and preparation method and application thereof |
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Application publication date: 20111130 |