CN104118069A - Cutting technology for solar silicon slice - Google Patents
Cutting technology for solar silicon slice Download PDFInfo
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- CN104118069A CN104118069A CN201410358445.7A CN201410358445A CN104118069A CN 104118069 A CN104118069 A CN 104118069A CN 201410358445 A CN201410358445 A CN 201410358445A CN 104118069 A CN104118069 A CN 104118069A
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Abstract
The invention discloses a cutting technology for a solar silicon slice. The cutting technology includes the following steps that A, silicon carbides and DEG cutting fluid are added into a preparation tank to be stirred for three or more hours according to the weight proportion of 1:0.9-1:1.2, and stirring needs to be continued until slurry is used up; B, the prepared slurry is added into a slurry tank of a multi-line cutting machine, a silicon rod is cut through the multi-line cutting machine, in the cutting process, firstly, cooling water is used for cooling the slurry to 18 DEG-20 DEG C, and then the silicon rod is added for cutting; C, a cut silicon slice is pre-cleaned through cleaning water; D, the pre-cleaned silicon slice is placed in a cleaning machine for secondary cleaning, and in the cleaning process, cleaning agents are added to remove DEG cutting fluid residues and other impurities; E, the silicon slice is detected and then packaged. According to the cutting technology, the DEG cutting fluid and the silicon carbides are mixed to be the slurry for slice cutting, so that the silicon carbides do not need to be baked to avoid agglomeration, meanwhile, cleaning is convenient, and the usage amount of the cleaning water and chemical cleaning fluid is decreased.
Description
Technical field
The present invention relates to a kind of cutting technique, refer to especially a kind of solar silicon wafers cutting technique.
Background technology
The cutting of solar silicon wafers is all generally to utilize silicon rod to cut into silicon chip at multi-line cutting machine, in the process of cutting, all to use cutting mortar, and be all generally to adopt PEG cutting liquid and silicon carbide micro-powder to mix at present, so before mixing, need that silicon carbide micro-powder is removed to moisture in drying in oven just can use; And the impact of humidity still can be subject to environment in the time mixing in, the carborundum in the mortar stirring when humidity is too high is easily united, and causes cutting yield to decline.In addition, the cleaning of the silicon chip after having cut need to consume a large amount of water and chemical cleaning solution could be removed PEG cutting liquid and other impurity, causes the waste of raw material.The price comparison costliness of PEG cutting liquid in addition.
Summary of the invention
Technical problem to be solved by this invention is: a kind of solar silicon wafers cutting technique is provided, this cutting technique utilizes DEG cutting liquid and carborundum to be mixed into mortar and joins in multi-line cutting machine and cut into slices, without carborundum is toasted, avoid the phenomenon of uniting, be convenient to clean simultaneously, reduce the consumption of clean water and chemical cleaning solution.
For solving the problems of the technologies described above, technical scheme of the present invention is: a kind of solar silicon wafers cutting technique, and it comprises the following steps:
The configuration of A, mortar: carborundum and DEG cutting liquid are added in batch tank and stirred at least three hours according to the scope of weight ratio 1:0.9-1:1.2, stir and continue to want mortar to use until exhausted:
B, the mortar configuring is added in the slurry tank of multi-line cutting machine, utilize multi-line cutting machine to cut silicon rod, in the time of cutting, utilize cooling water first mortar to be cooled between 18-20 DEG C, and then add silicon rod cutting position;
C, utilize clean water to carry out prerinse the silicon chip of well cutting;
D, the silicon chip after prerinse is put in cleaning machine and again cleaned, when cleaning, add cleaning agent and remove residual and other impurity of DEG cutting liquid;
E, silicon chip is detected to rear packaging.
Wherein, preferred, in described steps A, the particle diameter of carborundum is at 6.5-7um.
Wherein, preferred, the steel wire that in described step B, multi-line cutting machine uses is 110um or 115um or 120um.
Wherein, preferred, the clean water that in described step C, prerinse is used is running water.
Wherein, preferred, described cleaning agent is KOH or NP-10 cleaning agent.
Adopt after technique scheme, effect of the present invention is: owing to having adopted DEG cutting liquid and carborundum to be mixed into mortar, and DEG cutting liquid is water-based cutting liquid, the water imbibition of DEG is less than PEG, mobility is better than PEG, in so before mix and blend, carborundum is removed moisture without drying, and carborundum still can not be united, and avoids the phenomenon that causes cutting yield to decline because uniting to occur.And when cutting chilling temperature be controlled at that between 18-20 DEG C, can to guarantee that mortar adheres to moderate, increase steel wire band sand ability, improve cutting effect.After having cut first can to clear up on silicon chip the DEG of the overwhelming majority with clean water prerinse residual, DEG is water-based cutting liquid, easy-to-use clean water is cleaned, and has saved clean water and chemical cleaner.
Detailed description of the invention
Below by specific embodiment, the present invention is described in further detail.
A kind of solar silicon wafers cutting technique, it comprises the following steps:
The configuration of A, mortar: carborundum and DEG cutting liquid are added in batch tank and stirred at least three hours according to the scope of weight ratio 1:0.9-1:1.2, stir and continue to want mortar to use until exhausted: the weight ratio of general preferred carborundum and DEG cutting liquid is, the particle diameter of carborundum is at 6.5-7um, stirring three as a child just can be for cutting, DEG cutting liquid and carborundum fully stir in batch tank, without previously baked carborundum, save man-hour, drop into without baking box, save power consumption, reduced costs.DEG (sweet glycol) cutting liquid is a kind of water-based cutting liquid, and good fluidity is in PEG, and water imbibition is less than PEG, and in the time of 25 DEG C, the viscosity of DEG is 24.5Pa.s, and the viscosity of PEG is 38Pa.s.
B, the mortar configuring is added in the slurry tank of multi-line cutting machine, utilize multi-line cutting machine to cut silicon rod, in the time of cutting, utilize cooling water to carry out cooling to silicon rod cutting position, chilling temperature is between 18-20 DEG C, general temperature optimum in the time of 19 DEG C, and DEG cutting liquid temperature declines, its viscosity can rise, therefore, utilize this characteristic, make cutting temperature in the time of 19 DEG C, band sand ability when DEG viscosity increases cutting belt sand ability and current common P EG cutting approaches, and has made up the impact declining compared with the low cutting force bringing because of viscosity.The steel wire that multi-line cutting machine uses is 110um or 115um or 120um.Can select according to the thickness of cutting silicon wafer.
C, utilize clean water to carry out prerinse the silicon chip of well cutting; The clean water using generally adopts running water, and the visible impurity of major part and DEG cutting liquid on the flushable silicon chip of prerinse of clean water, because DEG cutting liquid is water-based cutting liquid, are therefore convenient to clean, and water consumption reduces.
D, the silicon chip after prerinse is put in cleaning machine and again cleaned, when cleaning, add cleaning agent and remove residual and other impurity of DEG cutting liquid; Described cleaning agent is KOH or NP-10 cleaning agent.This step main purpose is to clean some invisible impurity, and for example various ionic impurities also have a small amount of residual DEG cutting liquid, silica flour and silicon-carbide particle.
E, silicon chip is detected to rear packaging.In this step, detecting is generally the quality that checks the silicon chip after cutting, and to its quality divided rank.And according to grade separation packaging, separately sell.
1. separately attach the correction data that uses current conventional use PEG cutting liquid to cut and use each index that DEG cutting liquid cuts:
The lathe average power consumption of 2.PEG cutting liquid is 58.7KW/ hour
The lathe power consumption per hour of 3.DEG cutting liquid is 50.1KW/ hour, and every cutting one cutter is on average saved power consumption 86KW, and the comprehensive yield of cutting 3 cuttves is 95% left and right, substantially approaching
Prerinse silicon chip: every 0.28KG of PEG water consumption, every 0.22KG of DEG water consumption, every is reduced 0.06KG, every 2,000,000 using water wisely 120T.
Claims (5)
1. a solar silicon wafers cutting technique, it comprises the following steps:
The configuration of A, mortar: carborundum and DEG cutting liquid are added in batch tank and stirred at least three hours according to the scope of weight ratio 1:0.9-1:1.2, stir and continue to want mortar to use until exhausted:
B, the mortar configuring is added in the slurry tank of multi-line cutting machine, utilize multi-line cutting machine to cut silicon rod, in the time of cutting, utilize cooling water first mortar to be cooled between 18-20 DEG C, and then add silicon rod cutting position;
C, utilize clean water to carry out prerinse the silicon chip of well cutting;
D, the silicon chip after prerinse is put in cleaning machine and again cleaned, when cleaning, add cleaning agent and remove residual and other impurity of DEG cutting liquid;
E, silicon chip is detected to rear packaging.
2. a kind of solar silicon wafers cutting technique as claimed in claim 1, is characterized in that: in described steps A, the particle diameter of carborundum is at 6.5-7um.
3. a kind of solar silicon wafers cutting technique as claimed in claim 2, is characterized in that: the steel wire that in described step B, multi-line cutting machine uses is 110um or 115um or 120um.
4. a kind of solar silicon wafers cutting technique as claimed in claim 2, is characterized in that: the clean water that in described step C, prerinse is used is running water.
5. a kind of solar silicon wafers cutting technique as claimed in claim 4, is characterized in that: described cleaning agent is KOH or NP-10 cleaning agent.
Priority Applications (1)
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| CN201410358445.7A CN104118069A (en) | 2014-07-25 | 2014-07-25 | Cutting technology for solar silicon slice |
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| CN201410358445.7A CN104118069A (en) | 2014-07-25 | 2014-07-25 | Cutting technology for solar silicon slice |
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| CN201410358445.7A Pending CN104118069A (en) | 2014-07-25 | 2014-07-25 | Cutting technology for solar silicon slice |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107116711A (en) * | 2017-05-15 | 2017-09-01 | 南通综艺新材料有限公司 | One kind carries out silicon ingot cutting technique using new steel wire and solvent |
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Application publication date: 20141029 |