CN111370303B - Boron-aluminum source for diffusion and configuration method thereof - Google Patents
Boron-aluminum source for diffusion and configuration method thereof Download PDFInfo
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- CN111370303B CN111370303B CN201811587334.8A CN201811587334A CN111370303B CN 111370303 B CN111370303 B CN 111370303B CN 201811587334 A CN201811587334 A CN 201811587334A CN 111370303 B CN111370303 B CN 111370303B
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- FGUJWQZQKHUJMW-UHFFFAOYSA-N [AlH3].[B] Chemical compound [AlH3].[B] FGUJWQZQKHUJMW-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 238000009792 diffusion process Methods 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 21
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 30
- 239000002994 raw material Substances 0.000 claims abstract description 21
- 239000002904 solvent Substances 0.000 claims abstract description 21
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052796 boron Inorganic materials 0.000 claims abstract description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000002156 mixing Methods 0.000 claims abstract description 12
- 238000002360 preparation method Methods 0.000 claims abstract description 6
- 239000000843 powder Substances 0.000 claims description 39
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 claims description 33
- 229910052810 boron oxide Inorganic materials 0.000 claims description 26
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 26
- -1 aluminum compound Chemical class 0.000 claims description 22
- 150000001639 boron compounds Chemical class 0.000 claims description 17
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 13
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims description 12
- 239000004327 boric acid Substances 0.000 claims description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- XWROSHJVVFETLV-UHFFFAOYSA-N [B+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O Chemical compound [B+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XWROSHJVVFETLV-UHFFFAOYSA-N 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 150000001298 alcohols Chemical group 0.000 claims description 3
- 150000002170 ethers Chemical class 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 28
- 229910052710 silicon Inorganic materials 0.000 abstract description 28
- 239000010703 silicon Substances 0.000 abstract description 28
- 238000011084 recovery Methods 0.000 abstract description 3
- 238000012797 qualification Methods 0.000 abstract description 2
- 150000001638 boron Chemical class 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 24
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 18
- 238000003756 stirring Methods 0.000 description 13
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 238000005303 weighing Methods 0.000 description 10
- 229920001971 elastomer Polymers 0.000 description 9
- MOWNZPNSYMGTMD-UHFFFAOYSA-N oxidoboron Chemical class O=[B] MOWNZPNSYMGTMD-UHFFFAOYSA-N 0.000 description 9
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000001556 precipitation Methods 0.000 description 5
- 239000006228 supernatant Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000012946 outsourcing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000009210 therapy by ultrasound Methods 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Compounds (AREA)
Abstract
The invention provides a boron-aluminum source for diffusion, which comprises 8-30 wt% of boron source, 1-5 wt% of aluminum source and the balance of solvent. The invention also provides a method for preparing the boron-aluminum source for diffusion, which comprises the steps of putting the boron source raw material and the solvent into the same container to prepare supersaturated boron source solution; putting an aluminum source raw material and the solvent into the same container to prepare an aluminum source solution; mixing the supersaturated boron source solution with the aluminum source solution. The preparation method of the boron-aluminum source for diffusion provided by the invention is simple and easy to operate, and the boron-aluminum source is used for diffusion, so that the sheet resistance of two surfaces of a silicon wafer can be effectively reduced, the forward voltage drop is reduced, the Trr (reverse recovery time) value of the silicon wafer is increased, the diffusion qualification rate of the silicon wafer is high, and the performance quality of the silicon wafer is effectively improved.
Description
Technical Field
The invention relates to the technical field of semiconductor silicon wafer manufacturing, in particular to a boron-aluminum source for diffusion and a preparation method of the boron-aluminum source for diffusion.
Background
In the field of electronic component manufacturing, a silicon wafer is a widely used semiconductor material, and a high-voltage diode is produced by using a semiconductor material, namely a three-inch silicon wafer, as a main raw material. The preparation of silicon wafers in the industry mostly uses a diffusion process to form PN junctions, the diffused boron-aluminum source used in the industry at present is an outsourcing product, the outsourcing boron-aluminum source for diffusion does not need to be prepared with liquid and can be directly used, but the boron content of the outsourcing boron-aluminum source is lower and is usually about 7 percent, more boron is separated out in the using process, and the square resistance (sheet resistance) of the P surface of the diffused silicon wafer is larger; the forward pressure drop Vf is large; the uniformity is poor, the boron-aluminum junction is flatter, and the performance parameters of the prepared silicon wafer are influenced.
Disclosure of Invention
The invention aims to provide a boron-aluminum source for diffusion and a configuration method thereof, which are simple in configuration and greatly improve the performance parameters of the prepared product.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows: a boron-aluminum source for diffusion comprises 8-30 wt% of boron compound, 1-5 wt% of aluminum compound, and the balance of solvent.
In the above technical solution, preferably, the boron compound is boron oxide, boron nitrate or boric acid, and preferably, the boron compound is boron oxide.
In the above technical solution, preferably, the aluminum compound is aluminum oxide, aluminum nitrate or aluminum chloride, and preferably, the aluminum compound is aluminum nitrate.
Preferably, the solvent is alcohols, ethers or a mixture of alcohol ethers.
It is yet another object of the present invention to provide a method of configuring a boron aluminum source for diffusion, comprising:
step one, putting a boron source raw material and the solvent into the same container to prepare a supersaturated boron compound solution;
putting an aluminum source raw material and the solvent into the same container to prepare an aluminum compound solution;
and step three, mixing the supersaturated boron compound solution and the aluminum compound solution.
Preferably, in the above technical scheme, 40-150g of the boron source raw material and 350-450ml of the solvent are added in the first step, and preferably, the boron source raw material is boron oxide powder, boron nitrate powder or boric acid powder.
Preferably, in the above technical solution, in the second step, 30 to 70g of the aluminum source material and 200 to 300ml of the solvent are added, and preferably, the aluminum source material is alumina powder, aluminum nitrate powder or aluminum chloride powder.
Preferably, in the above technical scheme, the supersaturated boron compound solution and the aluminum compound solution in the third step are mixed according to a volume ratio of 20-30.
Preferably, in the above technical scheme, the step three is carried out by mixing under the constant temperature heating condition of the water bath.
Preferably, the heating temperature of the constant-temperature water bath heating is 40-60 ℃.
The invention has the advantages and positive effects that: the preparation method of the boron-aluminum source for diffusion is simple and easy to operate, the boron-aluminum source is used for diffusion, the sheet resistance of two surfaces of a silicon wafer can be effectively reduced, the forward voltage drop is reduced, the Trr (reverse recovery time) value of the silicon wafer is increased, the silicon wafer diffusion qualified rate is high, and the performance quality of the silicon wafer is effectively improved; the boron is mixed with the raw materials at any time, so that the precipitation of boron is effectively reduced, and the use is more convenient.
Detailed Description
The embodiments of the present invention are described below, but the present invention is not limited thereto.
The invention provides a boron-aluminum source for diffusion, which comprises 8-30 wt% of boron compound, 1-5 wt% of aluminum compound and the balance of solvent.
The boron compound is boron oxide, boron nitrate or boric acid, the aluminum compound is aluminum oxide, aluminum nitrate or aluminum chloride, and a large amount of experiments show that the boron oxide and the aluminum nitrate have the best effect, the preferred boron compound in the embodiment is boron oxide, and the aluminum compound is aluminum nitrate.
The solvent is alcohols, ethers or a mixture of alcohol ethers, such as ethanol, ethylene glycol ether or a mixture of ethanol and ethylene glycol ether.
It is yet another object of the present invention to provide a method of configuring a boron aluminum source for diffusion, comprising:
step one, putting a boron source raw material and a solvent into the same container to prepare a supersaturated boron compound solution;
putting an aluminum source raw material and a solvent into the same container to prepare an aluminum compound solution;
and step three, mixing the supersaturated boron compound solution and the aluminum compound solution.
Adding 40-150g of boron source raw material and 350-450ml of solvent in the first step, preferably, the boron source raw material is boron oxide powder, boron nitrate powder or boric acid powder. And adding 30-70g of aluminum source raw material and 200-300ml of solvent in the second step, wherein the aluminum source raw material is preferably aluminum oxide powder, aluminum nitrate powder or aluminum chloride powder.
And in the third step, the supersaturated boron compound solution and the aluminum compound solution are mixed according to the volume ratio of 20-30. And step three, mixing under the condition of constant temperature heating of a water bath. The heating temperature of the water bath constant temperature heating is 40-60 ℃.
The following embodiments are provided to describe the specific implementation method of the present invention:
example one
The boron-aluminum source for diffusion in this embodiment includes 25 wt% of boron oxide, 2 wt% of aluminum nitrate, and ethylene glycol ethyl ether as the rest.
The boron-aluminum source is prepared by the following method:
step one, measuring 350-450ml of ethylene glycol ethyl ether by using a measuring cup, and weighing 60-150g of boron oxide powder by using an electronic balance; pouring the boron oxide powder and ethylene glycol ethyl ether into a special container for a rubber roller, stirring for 3-5h at the rotating speed of 120r/min, and standing for 4-5h in a nitrogen cabinet to obtain a supersaturated boron oxide solution;
step two, measuring 200-300ml of ethylene glycol ethyl ether by using a measuring cup, and weighing 30-70g of aluminum nitrate powder by using an electronic balance; pouring aluminum nitrate powder and ethylene glycol ethyl ether into a special container for a rubber roller, stirring for 0.5-2h at the rotating speed of 120r/min, and standing in a nitrogen cabinet for 0.5-2h to obtain an aluminum nitrate solution;
and step three, measuring 40-60ml of the supernatant of the supersaturated boron oxide solution and 4-8ml of the aluminum nitrate solution by using a measuring cup, pouring into a beaker, and manually mixing uniformly for later use.
Example two
The boron-aluminum source for diffusion in this embodiment includes boric acid, aluminum oxide, and ethylene glycol ethyl ether, wherein the boric acid is 8 wt%, the aluminum nitrate is 1 wt%, and the ethylene glycol ethyl ether is the rest.
The boron-aluminum source is prepared by the following method:
firstly, measuring 350-450ml of ethylene glycol ethyl ether by using a measuring cup, and weighing 60-150g of boric acid powder by using an electronic balance; pouring boric acid powder and ethylene glycol ethyl ether into a special container for a roller mill, stirring for 3-5h at the rotating speed of 120r/min, and standing in a nitrogen cabinet for 4-5h to obtain supersaturated boric acid solution;
step two, measuring 200-300ml of ethylene glycol ethyl ether by using a measuring cup, and weighing 30-70g of alumina powder by using an electronic balance; pouring alumina powder and ethylene glycol ethyl ether into a special container for a roller mill, stirring for 0.5-2h at the rotating speed of 120r/min, and standing in a nitrogen cabinet for 0.5-2h to obtain an alumina solution;
and step three, measuring the supernatant of 40-60ml of supersaturated boric acid solution and 4-8ml of alumina solution by using a measuring cup, pouring into a beaker, and manually mixing uniformly for later use.
EXAMPLE III
The boron-aluminum source for diffusion in this embodiment includes 27 wt% of boron oxide, 5 wt% of aluminum nitrate, and ethylene glycol ethyl ether as the rest.
The boron-aluminum source is prepared by the following method:
step one, measuring 350-450ml of ethylene glycol ethyl ether by using a measuring cup, and weighing 60-150g of boron oxide powder by using an electronic balance; pouring the boron oxide powder and ethylene glycol ethyl ether into a special container for a roller mill, stirring for 3-5h at the rotating speed of 120r/min, and standing in a nitrogen cabinet for 4-5h to obtain supersaturated boron oxide solution;
step two, measuring 200-300ml of ethylene glycol ethyl ether by using a measuring cup, and weighing 30-70g of aluminum nitrate powder by using an electronic balance; pouring aluminum nitrate powder and ethylene glycol ethyl ether into a special container for a rubber roller, stirring for 0.5-2h at the rotating speed of 120r/min, and standing in a nitrogen cabinet for 0.5-2h to obtain an aluminum nitrate solution;
and step three, measuring 40-60ml of the supernatant of the supersaturated boron oxide solution and 4-8ml of the aluminum nitrate solution by using a measuring cup, pouring into a beaker, and stirring for 4-10min in a magnetic stirrer heated in a water bath at constant temperature of 40-60 ℃ at the stirring speed of 15-20HZ for later use.
Example four
The boron-aluminum source for diffusion in this embodiment includes boron oxide, aluminum nitrate, and ethylene glycol ethyl ether, where the weight percentage of boron oxide is 30%, the weight percentage of aluminum nitrate is 4%, and the rest is ethylene glycol ethyl ether.
The boron-aluminum source is prepared by the following method:
step one, measuring 350-450ml of ethylene glycol ethyl ether by using a measuring cup, and weighing 60-150g of boron oxide powder by using an electronic balance; pouring the boron oxide powder and ethylene glycol ethyl ether into a special container for a rubber roller, stirring for 3-5h at the rotating speed of 120r/min, and standing for 4-5h in a nitrogen cabinet to obtain a supersaturated boron oxide solution;
step two, measuring 200-300ml of ethylene glycol ethyl ether by using a measuring cup, and weighing 30-70g of aluminum nitrate powder by using an electronic balance; pouring aluminum nitrate powder and ethylene glycol ethyl ether into a special container for a roller mill, stirring for 0.5-2h at the rotating speed of 120r/min, and standing in a nitrogen cabinet for 0.5-2h to obtain an aluminum nitrate solution;
and step three, measuring 40-60ml of the supernatant of the supersaturated boron oxide solution and 4-8ml of the aluminum nitrate solution by using a measuring cup, pouring into a beaker, and carrying out ultrasonic treatment for 15-30min in an ultrasonic cleaning machine heated in a water bath at constant temperature of 40-60 ℃ for later use.
EXAMPLE five
The boron-aluminum source for diffusion in the embodiment comprises boron oxide, aluminum nitrate and ethanol, wherein the weight percentage of boron oxide is 15%, the weight percentage of aluminum nitrate is 2%, and the balance is ethanol.
The boron-aluminum source is prepared by the following method:
step one, measuring 350-450ml of ethanol by using a measuring cup, and weighing 40-60g of boron oxide powder by using an electronic balance; pouring the boron oxide powder and ethanol into a special container for a rubber roller, stirring for 3-5h at the rotating speed of 120r/min, and standing for 4-5h in a nitrogen cabinet to obtain a supersaturated boron oxide solution;
step two, measuring 200-300ml of ethanol by using a measuring cup, and weighing 30-70g of aluminum nitrate powder by using an electronic balance; pouring aluminum nitrate powder and ethanol into a special container for a rubber roller, stirring for 0.5-2h at the rotating speed of 120r/min, and standing in a nitrogen cabinet for 0.5-2h to obtain an aluminum nitrate solution;
and step three, measuring 40-60ml of the supernatant of the supersaturated boron oxide solution and 4-8ml of the aluminum nitrate solution by using a measuring cup, pouring into a beaker, and manually mixing uniformly for later use.
The boron-aluminum source prepared in the above embodiment is used for silicon wafer diffusion, and the experimental results show that the relevant electrical performance parameters of the silicon wafer after boron-aluminum diffusion are shown in the following table, wherein the relevant electrical performance parameters of the silicon wafer after the externally purchased boron-aluminum source is diffused are used as references:
from the above, it is understood that the second example is not as effective as other examples in using boric acid and alumina as raw materials, the fifth example is not as good in solubility of boron oxide powder in ethanol as in ethylene glycol ethyl ether, and the fifth example is not as good as other examples, but the second example and the fifth example are both better than the reference value. The performance parameters of the silicon wafer diffused by other embodiments are obviously improved, and in the first embodiment, because the boron oxide solution is required to be supersaturated and the manual mixing is incomplete when the silicon wafer is used, and the supersaturated boron oxide solution and the aluminum nitrate solution are separated out when being mixed, the latex drippers for diffusion are wiped for a long time during diffusion or filter paper is used for filtering before the diffusion is required, so that the time is consumed; in the third embodiment, a magnetic stirrer is used for stirring, no precipitation exists after mixing, filtering or frequently wiping a rubber head is not needed, but the rubber head needs to be used as soon as possible after being prepared, precipitation can occur after the rubber head is placed for 10 hours, and performance parameters after diffusion are superior to those in the first embodiment; in the fourth embodiment, the ultrasonic cleaning machine is used to enable boron oxide to be more molten, so that the boron content in the boron-aluminum source is high, the electrical property of the diffused silicon wafer is better, the silicon wafer is superior to other embodiments, no precipitation exists after ultrasonic treatment, and precipitation can occur after the silicon wafer is placed for 3 hours, so that the silicon wafer is suitable for occasions where the silicon wafer is prepared at any time and used at any time.
The preparation method of the boron-aluminum source for diffusion provided by the invention is simple and easy to operate, and the boron-aluminum source is used for diffusion, so that the sheet resistance of two surfaces of a silicon wafer can be effectively reduced, the forward voltage drop is reduced, the Trr (reverse recovery time) value of the silicon wafer is increased, the diffusion qualification rate of the silicon wafer is high, and the performance quality of the silicon wafer is effectively improved.
The embodiments of the present invention have been described in detail, but the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (8)
1. A method of configuring a boron aluminum source for diffusion, characterized by: the boron-aluminum source for diffusion comprises 15-30 wt% of boron compound, 1-4 wt% of aluminum compound and the balance of solvent, and the preparation method comprises the following steps:
step one, putting a boron source raw material and the solvent into the same container to prepare a supersaturated boron compound solution;
putting an aluminum source raw material and the solvent into the same container to prepare an aluminum compound solution;
step three, mixing the supersaturated boron compound solution and the aluminum compound solution;
and (3) mixing the supersaturated boron compound solution and the aluminum compound solution in the third step according to a volume ratio of 20-30.
2. The method of configuring a source of boron aluminum for diffusion according to claim 1, wherein: the boron compound is boron oxide, boron nitrate or boric acid.
3. The method of configuring a source of boron aluminum for diffusion according to claim 1 or 2, characterized in that: the aluminum compound is aluminum oxide, aluminum nitrate or aluminum chloride.
4. The method of configuring a source of boron aluminum for diffusion according to claim 1, wherein: the solvent is alcohols or ethers or a mixture of alcohol ethers.
5. The method of claim 1, 2 or 4, wherein: in the first step, 40-150g of the boron source raw material and 350-450ml of the solvent are added.
6. The method of claim 5, wherein: the boron source raw material is boron oxide powder, boron nitrate powder or boric acid powder.
7. The method of claim 5, wherein: and in the second step, 30-70g of the aluminum source raw material and 200-300ml of the solvent are added.
8. The method of claim 7, wherein: the aluminum source raw material is alumina powder, aluminum nitrate powder or aluminum chloride powder.
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| CN111370303A (en) | 2020-07-03 |
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