CN111370304B - Boron-aluminum source and configuration method thereof - Google Patents
Boron-aluminum source and configuration method thereof Download PDFInfo
- Publication number
- CN111370304B CN111370304B CN201811587338.6A CN201811587338A CN111370304B CN 111370304 B CN111370304 B CN 111370304B CN 201811587338 A CN201811587338 A CN 201811587338A CN 111370304 B CN111370304 B CN 111370304B
- Authority
- CN
- China
- Prior art keywords
- boron
- aluminum
- compound
- solvent
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a boron-aluminum source, which comprises 8-25 wt% of boron compound, 1-3 wt% of aluminum compound, 0.2-1 wt% of silicon compound and the balance of solvent. The invention also provides a method for preparing the boron-aluminum source, which comprises the steps of putting the boron source raw material and the solvent into the same container to prepare supersaturated boron compound solution; putting an aluminum source raw material and a solvent into the same container to prepare an aluminum compound solution; putting silicon compound raw materials and a solvent into the same container to prepare a silicon compound; the supersaturated boron compound solution, aluminum compound solution and silicon compound solution are mixed. According to the preparation method of the boron-aluminum source, the prepared boron-aluminum source becomes thicker and is more easily coated uniformly by adding the silicon dioxide, and the boron-aluminum source is used for diffusion, so that the sheet resistance of two surfaces of a silicon wafer can be effectively reduced, the forward voltage drop is reduced, the Trr value of the silicon wafer is improved, the diffusion qualification rate is high, and the electrical property of the silicon wafer is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor silicon wafer manufacturing, in particular to a boron-aluminum source and a preparation method of the boron-aluminum source.
Background
In the field of electronic component manufacturing, a silicon wafer is a widely used semiconductor material, and a high-voltage diode is produced by using a semiconductor material, namely a three-inch silicon wafer, as a main raw material. The preparation of silicon wafers in the industry mostly adopts a diffusion process to form PN junctions, the diffused boron-aluminum source used in the industry at present is an outsourcing product, the outsourcing boron-aluminum source does not need to be prepared with liquid and can be directly used, but the boron content of the outsourcing boron-aluminum source is lower and is usually about 7 percent, more boron is separated out in the using process, and the sheet resistance (sheet resistance) of the P surface of the silicon wafer after diffusion is larger; the forward pressure drop Vf is large; the uniformity is poor, the boron-aluminum junction is flatter, and the performance parameters of the prepared silicon wafer are influenced.
Disclosure of Invention
The invention aims to provide a boron-aluminum source and a configuration method thereof, which are simple in configuration and greatly improve the performance parameters of the prepared product.
In order to solve the technical problems, the invention adopts the technical scheme that: a boron-aluminum source comprises 8-25 wt% of boron compound, 1-3 wt% of aluminum compound, 0.2-1 wt% of silicon compound and the balance of solvent.
In the above technical solution, preferably, the boron compound is boron oxide, boron nitrate or boric acid, and preferably, the boron compound is boron oxide.
In the above technical solution, preferably, the aluminum compound is aluminum oxide, aluminum nitrate or aluminum chloride, and preferably, the aluminum compound is aluminum nitrate.
Preferably, in the above technical solution, the silicon compound is silicon dioxide.
Preferably, the solvent is alcohols, ethers or a mixture of alcohol ethers.
It is yet another object of the present invention to provide a method of configuring a source of boron aluminum comprising:
putting a boron source raw material and the solvent into the same container to prepare supersaturated boron compound solution;
putting an aluminum source raw material and the solvent into the same container to prepare an aluminum compound solution;
putting the silicon compound raw material and the solvent into the same container to prepare a silicon compound solution;
and step four, mixing the supersaturated boron compound solution, the aluminum compound solution and the silicon compound solution.
Preferably, in the above technical scheme, 40-150g of the boron source raw material and 350-450ml of the solvent are added in the first step, and preferably, the boron source raw material is boron oxide powder, boron nitrate powder or boric acid powder.
Preferably, in the above technical solution, in the second step, 30 to 70g of the aluminum source material and 200 to 300ml of the solvent are added, and preferably, the aluminum source material is alumina powder, aluminum nitrate powder or aluminum chloride powder.
Preferably, in the above technical scheme, 5-15g of the silicon compound raw material and 250-350ml of the solvent are added in the step three, and preferably, the silicon compound is nano silicon dioxide.
Preferably, in the fourth step, the supersaturated boron compound solution, the aluminum compound solution and the silicon compound solution are mixed in a volume ratio of 20-30: 3-8, and mixing.
The invention has the advantages and positive effects that: the preparation method of the boron-aluminum source provided by the invention is simple and easy to operate, the prepared boron-aluminum source becomes thicker and is easier to coat evenly by adding the silicon dioxide solution, the sheet resistance of two surfaces of the silicon wafer can be effectively reduced by using the boron-aluminum source for diffusion, the forward pressure drop is reduced, the Trr (reverse recovery time) value of the silicon wafer is improved, the diffusion qualification rate of the silicon wafer is high, and the performance quality of the silicon wafer is effectively improved; the boron is mixed with the raw materials at any time, so that the precipitation of boron is effectively reduced, and the use is more convenient.
Detailed Description
The embodiments of the present invention are described below, but the present invention is not limited thereto.
The invention provides a boron-aluminum source, which comprises 8-25 wt% of boron compound, 1-3 wt% of aluminum compound, 0.2-1 wt% of silicon compound and the balance of solvent.
The boron compound is boron oxide, boron nitrate or boric acid, the aluminum compound is aluminum oxide, aluminum nitrate or aluminum chloride, and a large number of experiments show that the boron oxide and the aluminum nitrate have the best effect. The silicon compound is silicon dioxide.
The solvent is alcohol, ether or mixture of alcohol ether, such as ethanol, ethylene glycol ether or mixture of ethanol and ethylene glycol ether.
It is yet another object of the present invention to provide a method of configuring a boron aluminum source comprising:
step one, putting a boron source raw material and a solvent into the same container to prepare a supersaturated boron compound solution;
putting an aluminum source raw material and a solvent into the same container to prepare an aluminum compound solution;
putting the silicon compound raw material and the solvent into the same container to prepare a silicon compound solution;
and step four, mixing the supersaturated boron compound solution, the aluminum compound solution and the silicon compound solution.
Adding 40-150g of boron source raw material and 350-450ml of solvent in the first step, preferably, the boron source raw material is boron oxide powder, boron nitrate powder or boric acid powder. And adding 30-70g of aluminum source raw material and 200-300ml of solvent in the second step, wherein the aluminum source raw material is preferably aluminum oxide powder, aluminum nitrate powder or aluminum chloride powder.
Adding 5-15g of silicon compound raw material and 250-350ml of solvent into the third step, wherein the silicon compound is silicon dioxide, and preferably nano silicon dioxide is selected as the raw material.
In the fourth step, the supersaturated boron compound solution, the aluminum compound solution and the silicon compound solution are mixed according to the volume ratio of 20-30: 3-8 and mixing.
The following embodiments are provided to describe the specific implementation method of the present invention:
example one
The boron-aluminum source of the present embodiment includes 18 wt% of boron oxide, 2 wt% of aluminum nitrate, 0.5 wt% of silicon dioxide, and the balance ethylene glycol ethyl ether.
The boron-aluminum source is prepared by the following method:
firstly, measuring 350-450ml of ethylene glycol ethyl ether by using a measuring cup, and weighing 60-120g of boron oxide powder by using an electronic balance; pouring the boron oxide powder and ethylene glycol ethyl ether into a special container for a rubber roller, stirring for 3-5h at the rotating speed of 120r/min, and standing for 4-5h in a nitrogen cabinet to obtain a supersaturated boron oxide solution;
step two, measuring 200-300ml of ethylene glycol ethyl ether by using a measuring cup, and weighing 40-50g of aluminum nitrate powder by using an electronic balance; pouring aluminum nitrate powder and ethylene glycol ethyl ether into a special container for a rubber roller, stirring for 0.5-2h at the rotating speed of 120r/min, and standing in a nitrogen cabinet for 0.5-2h to obtain an aluminum nitrate solution;
step three, measuring 250-350ml of ethylene glycol ethyl ether by using a measuring cup, and weighing 5-15g of nano silicon dioxide powder by using an electronic balance; pouring the silicon dioxide powder and ethylene glycol ethyl ether into a special container for a planetary stirrer, and stirring for 90-150s at the rotating speed of 180r/min to obtain a silicon dioxide suspension;
step four, measuring 40-60ml of supernatant of supersaturated boron oxide solution, 4-8ml of aluminum nitrate solution and 6-16ml of silicon dioxide suspension by using a measuring cup, and uniformly mixing for later use. During mixing, the solution with small volume can be manually mixed, and in order to enable more boron oxide to be melted, a magnetic stirrer which is heated in a water bath at constant temperature of 40-60 ℃ can be used for stirring for 4-10min, wherein the stirring speed is 15-20HZ; or ultrasonic cleaning in an ultrasonic cleaning machine heated in 40-60 deg.C water bath at constant temperature for 15-30min. Because more boron oxide is blended, the silicon wafer which is diffused by applying the boron-aluminum source mixed by the magnetic stirrer and the ultrasonic cleaning machine has better electrical property than the silicon wafer which is diffused by the manually mixed boron-aluminum source.
Example two
The boron-aluminum source of the present embodiment includes 25 wt% of boron oxide, 3 wt% of aluminum nitrate, 0.2 wt% of silicon dioxide, and the balance ethylene glycol ether.
The boron-aluminum source is prepared by the following method:
firstly, measuring 350-450ml of ethylene glycol ethyl ether by using a measuring cup, and weighing 100-150g of boron oxide powder by using an electronic balance; pouring the boron oxide powder and ethylene glycol ethyl ether into a special container for a roller mill, stirring for 3-5h at the rotating speed of 120r/min, and standing in a nitrogen cabinet for 4-5h to obtain supersaturated boron oxide solution;
step two, measuring 200-300ml of ethylene glycol ethyl ether by using a measuring cup, and weighing 50-70g of aluminum nitrate powder by using an electronic balance; pouring aluminum nitrate powder and ethylene glycol ethyl ether into a special container for a rubber roller, stirring for 0.5-2h at the rotating speed of 120r/min, and standing in a nitrogen cabinet for 0.5-2h to obtain an aluminum nitrate solution;
step three, measuring 250-350ml of ethylene glycol ethyl ether by using a measuring cup, and weighing 5-15g of nano silicon dioxide powder by using an electronic balance; pouring the silicon dioxide powder and ethylene glycol ethyl ether into a special container of a planetary stirrer, and stirring for 90-150s at the rotating speed of 180r/min to obtain a silicon dioxide suspension;
step four, measuring 40-60ml of the supernatant of the supersaturated boron oxide solution, 4-8ml of the aluminum nitrate solution and 6-16ml of the silicon dioxide suspension by using a measuring cup, and uniformly mixing for later use. During mixing, the solution with small volume can be manually mixed, and in order to enable more boron oxide to be melted, a magnetic stirrer which is heated in a water bath at constant temperature of 40-60 ℃ can be used for stirring for 4-10min, wherein the stirring speed is 15-20HZ; or ultrasonic cleaning in an ultrasonic cleaning machine heated in 40-60 deg.C water bath at constant temperature for 15-30min. Because more boron oxide is blended, the silicon wafer which is diffused by applying the boron-aluminum source mixed by the magnetic stirrer and the ultrasonic cleaning machine has better electrical property than the silicon wafer which is manually mixed with the boron-aluminum source.
EXAMPLE III
The boron-aluminum source of the present embodiment includes boron oxide, aluminum nitrate, silicon dioxide, and ethanol, wherein the weight percentage of boron oxide is 8%, the weight percentage of aluminum nitrate is 1%, the weight percentage of silicon dioxide is 1%, and the balance is ethanol.
The boron-aluminum source is prepared by the following method:
step one, measuring 350-450ml of ethanol by using a measuring cup, and weighing 40-60g of boron oxide powder by using an electronic balance; pouring the boron oxide powder and ethanol into a special container for a rubber roller, stirring for 3-5h at the rotating speed of 120r/min, and standing for 4-5h in a nitrogen cabinet to obtain a supersaturated boron oxide solution;
step two, measuring 200-300ml of ethanol by using a measuring cup, and weighing 30-40g of aluminum nitrate powder by using an electronic balance; pouring aluminum nitrate powder and ethanol into a special container for a rubber roller, stirring for 0.5-2h at the rotating speed of 120r/min, and standing in a nitrogen cabinet for 0.5-2h to obtain an aluminum nitrate solution;
step three, measuring 250-350ml of ethanol by using a measuring cup, and weighing 5-15g of nano silicon dioxide powder by using an electronic balance; pouring the silicon dioxide powder and the ethanol into a special container of a planetary stirrer, and stirring for 90-150s at the rotating speed of 180r/min to obtain a silicon dioxide suspension;
step four, measuring 40-60ml of the supernatant of the supersaturated boron oxide solution, 4-8ml of the aluminum nitrate solution and 6-16ml of the silicon dioxide suspension by using a measuring cup, and uniformly mixing for later use. During mixing, the solution with small volume can be manually mixed, and in order to enable more boron oxide to be melted, a magnetic stirrer which is heated in a water bath at constant temperature of 40-60 ℃ can be used for stirring for 4-10min, wherein the stirring speed is 15-20HZ; or ultrasonic cleaning in an ultrasonic cleaning machine heated in 40-60 deg.C water bath at constant temperature for 15-30min. Because more boron oxide is blended, the silicon wafer which is diffused by applying the boron-aluminum source mixed by the magnetic stirrer and the ultrasonic cleaning machine has better electrical property than the silicon wafer which is manually mixed with the boron-aluminum source.
The boron-aluminum source prepared in the above embodiment is used for silicon wafer diffusion, and the experimental results show that the relevant electrical performance parameters of the silicon wafer after boron-aluminum diffusion are shown in the following table, wherein the relevant electrical performance parameters of the silicon wafer after the externally purchased boron-aluminum source is diffused are used as references:
from the above, the silicon wafer performance parameters after the first, second and third diffusion are significantly improved, the solubility of boron oxide powder in ethanol in the third embodiment is not as high as that in ethylene glycol ethyl ether, the third embodiment is not as good as the other embodiments, but the third embodiment is still better than the reference value.
The preparation method of the boron-aluminum source provided by the invention is simple and easy to operate, the prepared boron-aluminum source becomes thicker and is easier to coat evenly by adding the silicon dioxide solution, the sheet resistance of two surfaces of the silicon wafer can be effectively reduced by using the boron-aluminum source for diffusion, the forward pressure drop is reduced, the Trr (reverse recovery time) value of the silicon wafer is improved, the diffusion qualified rate of the silicon wafer is high, and the performance quality of the silicon wafer is effectively improved.
The embodiments of the present invention have been described in detail, but the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (11)
1. A method for preparing a boron-aluminum source, which is characterized by comprising the following steps: the boron-aluminum source comprises 18-25 wt% of boron compound, 1-3 wt% of aluminum compound, 0.2-1 wt% of silicon compound and the balance of solvent;
the configuration method comprises the following steps:
putting a boron source raw material and the solvent into the same container to prepare supersaturated boron compound solution;
putting an aluminum source raw material and the solvent into the same container to prepare an aluminum compound solution;
putting silicon compound raw materials and the solvent into the same container to prepare a silicon compound solution;
step four, mixing the supersaturated boron compound solution, the aluminum compound solution and the silicon compound solution; the supersaturated boron compound solution, the aluminum compound solution and the silicon compound solution in the fourth step are mixed at a volume ratio of 20-30: 3-8, and heating in water bath at constant temperature of 40-60 ℃.
2. The method of claim 1, wherein: the boron compound is boron oxide, boron nitrate or boric acid.
3. The method according to claim 1 or 2, characterized in that: the aluminum compound is aluminum oxide, aluminum nitrate or aluminum chloride.
4. The method according to claim 1 or 2, characterized in that: the silicon compound is silicon dioxide.
5. The method of claim 1, wherein: the solvent is alcohols or ethers or a mixture of alcohol ethers.
6. The method of claim 1, wherein: in the first step, 40-150g of the boron source raw material and 350-450ml of the solvent are added.
7. The method of claim 6, wherein: the boron source raw material is boron oxide powder, boron nitrate powder or boric acid powder.
8. The method of claim 6, wherein: and in the second step, 30-70g of the aluminum source raw material and 200-300ml of the solvent are added.
9. The method of claim 8, wherein: the aluminum source raw material is alumina powder, aluminum nitrate powder or aluminum chloride powder.
10. The method according to any one of claims 6-9, wherein: 5-15g of the silicon compound raw material and 250-350ml of the solvent are added into the step three.
11. The method of claim 10, wherein: the silicon compound is nano silicon dioxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811587338.6A CN111370304B (en) | 2018-12-25 | 2018-12-25 | Boron-aluminum source and configuration method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811587338.6A CN111370304B (en) | 2018-12-25 | 2018-12-25 | Boron-aluminum source and configuration method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111370304A CN111370304A (en) | 2020-07-03 |
| CN111370304B true CN111370304B (en) | 2023-03-28 |
Family
ID=71211371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811587338.6A Active CN111370304B (en) | 2018-12-25 | 2018-12-25 | Boron-aluminum source and configuration method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111370304B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114606573A (en) * | 2022-01-21 | 2022-06-10 | 济南晶硕电子有限公司 | Environment-friendly boron diffusion source formula |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000054341A1 (en) * | 1999-03-11 | 2000-09-14 | Merck Patent Gmbh | Doting pastes for producing p, p+ and n, n+ zones in semiconductors |
| JP2002299274A (en) * | 2001-04-02 | 2002-10-11 | Sanken Electric Co Ltd | Manufacturing method for semiconductor device |
| JP2011181463A (en) * | 2010-03-03 | 2011-09-15 | Tdk Corp | Polymer electrolyte, secondary battery, and method of manufacturing secondary battery |
| CN103059666A (en) * | 2011-10-04 | 2013-04-24 | 信越化学工业株式会社 | Coating fluid for boron diffusion |
| CN105340370A (en) * | 2013-07-04 | 2016-02-17 | 爱克发-格法特公司 | A method of preparing a conductive metallic layer or pattern |
| CN108133890A (en) * | 2017-12-23 | 2018-06-08 | 中国振华集团永光电子有限公司（国营第八三七厂） | A kind of production method of high pressure fast-recovery commutation diode |
-
2018
- 2018-12-25 CN CN201811587338.6A patent/CN111370304B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000054341A1 (en) * | 1999-03-11 | 2000-09-14 | Merck Patent Gmbh | Doting pastes for producing p, p+ and n, n+ zones in semiconductors |
| JP2002299274A (en) * | 2001-04-02 | 2002-10-11 | Sanken Electric Co Ltd | Manufacturing method for semiconductor device |
| JP2011181463A (en) * | 2010-03-03 | 2011-09-15 | Tdk Corp | Polymer electrolyte, secondary battery, and method of manufacturing secondary battery |
| CN103059666A (en) * | 2011-10-04 | 2013-04-24 | 信越化学工业株式会社 | Coating fluid for boron diffusion |
| CN105340370A (en) * | 2013-07-04 | 2016-02-17 | 爱克发-格法特公司 | A method of preparing a conductive metallic layer or pattern |
| CN108133890A (en) * | 2017-12-23 | 2018-06-08 | 中国振华集团永光电子有限公司（国营第八三七厂） | A kind of production method of high pressure fast-recovery commutation diode |
Non-Patent Citations (1)
| Title |
|---|
| 氧化硼,硝酸铝扩散源的配制与使用;张桂华;《永光半导体》;19921231;第46-47页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111370304A (en) | 2020-07-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104140678B (en) | Self-adhesive heat-conducting silicone grease and preparation method thereof | |
| CN102785038B (en) | Surface treatment method for protecting superfine raw solder powder, and superfine powder solder paste prepared according to method | |
| CN106753026B (en) | The modified method in surface, modified silver powder are carried out to silver powder and include its conductive silver glue | |
| CN111370304B (en) | Boron-aluminum source and configuration method thereof | |
| CN105810294A (en) | Waterborne conductive silver paste and preparation method thereof | |
| CN106601327B (en) | Low solvent volatility conductive slurry for front electrode of solar battery and preparation method | |
| CN103254706A (en) | Water-based release agent and preparation method thereof | |
| CN103497464A (en) | FEP fluorine color master batch and processing technique thereof | |
| CN103976892B (en) | A kind of glabridin microemulsion and preparation method thereof | |
| CN111370303B (en) | Boron-aluminum source for diffusion and configuration method thereof | |
| CN107488375A (en) | Height filling aqueous wooden ware compound type transparent putty and preparation method thereof | |
| CN104945649B (en) | A kind of smooth release mould release membrance of weight in silicone oil face and its production technology | |
| CN102855961B (en) | Paste for formation of solar cell back electrodes and preparation method thereof | |
| CN108511107B (en) | A kind of back passivation aluminium paste and preparation method thereof containing porous structure powder | |
| CN101845245B (en) | Easily scrubbed graffiti art watercolor paint and preparation method | |
| CN108538431A (en) | A kind of silicon solar cell positive silver paste of stabilization and preparation method thereof | |
| CN104744989B (en) | Epoxy powder coating dulling and curing agent and preparation method thereof and powder paint compositions | |
| CN103824653A (en) | Method for preparing back-field slurry of high-performance crystal silicon solar cell | |
| CN104800091B (en) | Composition and method for thickening for transparent type pure amino acid surfactant system cleaning products from thickening | |
| CN105362173A (en) | Freckle-removing and skin-whitening mask and preparing method thereof | |
| CN104277661A (en) | Clear lacquer and preparation method thereof | |
| CN103824613A (en) | High-performance back surface field paste for crystalline silicon solar cell | |
| TWI555035B (en) | Silver paste and method for manufacturing the same | |
| CN106167900A (en) | industrial electric flatcar | |
| CN107799373B (en) | A kind of modified amorphous glass powder and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |