CN103952211A - Composite cutting fluid used for solar silicon wafer manufacturing and its preparation method - Google Patents
Composite cutting fluid used for solar silicon wafer manufacturing and its preparation method Download PDFInfo
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- CN103952211A CN103952211A CN201410075366.5A CN201410075366A CN103952211A CN 103952211 A CN103952211 A CN 103952211A CN 201410075366 A CN201410075366 A CN 201410075366A CN 103952211 A CN103952211 A CN 103952211A
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Abstract
The invention discloses a composite cutting fluid used for solar silicon wafer manufacturing and its preparation method, the composite cutting fluid includes ethylene glycol, a viscosity regulator, a corrosion inhibitor, a defoaming agent, a dispersing agent and a preservative. The composite cutting fluid prepared by the preparation method has good performance, can be applied to the solar silicon wafer cutting, and has the advantages of simple preparation, good dispersion, high yield of finished cutting products, and low cost.
Description
Technical field
The invention belongs to photovoltaic technology field, be specifically related to a kind of compound cuts liquid of manufacturing for solar silicon wafers and preparation method thereof.
Background technology
In recent years, reinforcement along with people's environmental consciousness, this green resource of sun power is paid much attention in countries in the world, solar cell is widely used, the application fast development of the crystal such as consequent hard brittle material silicon, there is the situation that supply falls short of demand in the hard brittle materials such as silicon single crystal, polysilicon silicon chip at nearly 5 years.Most importantly in manufacturing the process of solar silicon wafers exactly silicon rod or silicon ingot are cut into silicon chip, compound cuts liquid is exactly necessary important auxiliary material in this cutting process.
PEG is one of important polymerization product of oxyethane, and its special performance makes it be widely used in the industrial circles such as chemical fibre, textile printing and dyeing, medicine and rubber and plastic.PEG is as the main main raw for sun power cutting silicon wafer process, and its price plays critical effect for the cost of the manufacturing processed of sun power cutting silicon wafer.In order to be reduced in the material cost of cutting silicon wafer process, be necessary to find to meet the cutting liquid of split requirement.
Summary of the invention
The object of the invention is to solve above-mentioned the problems of the prior art, a kind of compound cuts liquid of manufacturing for solar silicon wafers and preparation method thereof is provided, simple according to compound cuts liquid preparation of the present invention, low price.
To achieve these goals, the technical solution adopted in the present invention is:
A compound cuts liquid of manufacturing for solar silicon wafers, according to volume parts meter, comprises following component:
Also comprise the viscosity modifier of 5～20 parts.
Described viscosity modifier is one or more of glycerol, Macrogol 200, poly(oxyethylene glycol) 400, polyoxyethylene glycol 800 or cetomacrogol 1000.
Described inhibiter is one or more in benzotriazole, trolamine or trolamine boric acid ester.
Described defoamer is one or more in SRECN defoamer, dimethyl silicone oil, DE889 defoamer or silicone antifoam agent SE-47.
Described dispersion agent is Tamol NN dispersion agent or sodium methylene bis-naphthalene sulfonate.
Described sanitas is one or more in phenylformic acid, propylparaben or isoquinolines.
A preparation method for the compound cuts liquid of manufacturing for solar silicon wafers, comprises the following steps:
The viscosity modifier of 5～20 parts is fully dissolved in the ethylene glycol of 70～90 parts, stir to add the inhibiter of 0.1～10 part and be stirred in backward mixed solution and mix, to adding the defoamer of 0.1～10 part and be stirred in mixed solution, mix again, and then mix to adding the dispersion agent of 0.1～10 part and be stirred in mixed solution, last to adding the sanitas of 0.1～10 part and be stirred in mixed solution, mix again, obtain the compound cuts liquid of manufacturing for solar silicon wafers.
Described viscosity modifier is one or more of glycerol, Macrogol 200, poly(oxyethylene glycol) 400, polyoxyethylene glycol 800 or cetomacrogol 1000; Described inhibiter is one or more in benzotriazole, trolamine or trolamine boric acid ester; Described defoamer is one or more in SRECN defoamer, dimethyl silicone oil, DE889 defoamer or silicone antifoam agent SE-47; Described dispersion agent is TamolNN dispersion agent or sodium methylene bis-naphthalene sulfonate; Described sanitas is one or more in phenylformic acid, propylparaben or isoquinolines.
Compared with prior art, the present invention has following beneficial effect:
(1) cutting liquid cost.Main advantage of the present invention is that cutting liquid cost obviously reduces, and this is the most key for solar silicon wafers cutting process.Manufacture at low cost solar silicon wafers significant for the market competitiveness of production company.
(2) processing requirement in the time of can meeting cutting silicon wafer during cutting silicon wafer, can reach index in good article rate, especially TTV, cut index and the industrial production in current industrial production in suitable level.
(3) cutting liquid using in industrial production and is at present compared, and viscosity is effectively controlled.Two kinds of cutting liquids that account for main flow in present industrial production, a kind of range of viscosities is in 65～70mPa.s, and another kind of viscosity is at 45～55mPa.s.Cutting liquid viscosity of the present invention can freely be controlled and regulate.
(4) and industrial production cutting liquid comparison used, foam is controlled.Owing to having added the suitable defoamer of appropriate amount, the frothing in silicon chip cutting process has obtained effective control.The control of foam volume can guarantee to be injected into the sand content in the mortar on cutting steel wire, can make the direct friction of cutting steel wire and silico briquette be reduced.
(5) dispersiveness of silicon carbide free abrasive in cutting liquid gets a promotion.After the dispersiveness of silicon carbide free abrasive improves, for the drawing process when cutting process steel wire drives silicon-carbide particle, guaranteed as much as possible the cutting of its single particle form, avoided the cohesion of silicon-carbide particle, for the size of the wearing and tearing of steel wire and the formed silicon fragment of the friction of silico briquette, become less.
Compound cuts liquid prepared by the present invention, after standing one day, the height of silicon carbide is 9.5～11cm, the success ratio of cutting silicon wafer is more than 99%;
Embodiment
In order to understand the present invention, below by specific embodiment, the invention will be further described.
The present invention includes following steps:
By the glycerol of 5～20 parts, Macrogol 200, poly(oxyethylene glycol) 400, one or more mixtures of polyoxyethylene glycol 800 or cetomacrogol 1000 are fully dissolved in the ethylene glycol of 70～90 parts, stir and add the benzotriazole of 0.1～10 part in backward mixed solution, one or more mixtures in trolamine or trolamine boric acid ester being stirred to mix, again to the SRECN defoamer that adds 0.1～10 part in mixed solution, dimethyl silicone oil, one or more mixtures in DE889 defoamer or silicone antifoam agent SE-47 being stirred to mix, and then mix to adding Tamol NN dispersion agent or the sodium methylene bis-naphthalene sulfonate of 0.1～10 part and be stirred in mixed solution, last again to the phenylformic acid that adds 0.1～10 part in mixed solution, one or more mixtures in propylparaben or isoquinolines being stirred to mix, obtain the compound cuts liquid of manufacturing for solar silicon wafers.
Wherein, Tamol NN dispersion agent is that BASF is produced, and SRECN defoamer is that Tianjin Shang Long Chemical trade company limited produces; Silicone antifoam agent SE-47 is that German wacker manufactures.
Enumerate specific embodiments of the invention below:
Embodiment 1
The glycerol of 20 parts is fully dissolved in the ethylene glycol of 70 parts, stir to add the benzotriazole of 2 parts and be stirred in backward mixed solution and mix, to adding the SRECN defoamer of 2 parts and be stirred in mixed solution, mix again, and then mix to adding the Tamol NN dispersion agent of 5 parts and be stirred in mixed solution, last to adding the phenylformic acid of 1 part and be stirred in mixed solution, mix again, obtain the compound cuts liquid of manufacturing for solar silicon wafers.
Embodiment 2
The polyoxyethylene glycol of 5 parts 800 is fully dissolved in the ethylene glycol of 75 parts, stir to add the benzotriazole of 10 parts and be stirred in backward mixed solution and mix, to adding the SRECN defoamer of 3 parts and be stirred in mixed solution, mix again, and then mix to adding the Tamol NN dispersion agent of 6 parts and be stirred in mixed solution, last to adding the isoquinolines of 1 part and be stirred in mixed solution, mix again, obtain the compound cuts liquid of manufacturing for solar silicon wafers.
Embodiment 3
The polyoxyethylene glycol of 5 parts 800 is fully dissolved in the ethylene glycol of 90 parts, stir to add the trolamine boric acid ester of 0.1 part and be stirred in backward mixed solution and mix, to adding the silicone antifoam agent SE-47 of 0.1 part and be stirred in mixed solution, mix again, and then mix to adding the sodium methylene bis-naphthalene sulfonate of 3 parts and be stirred in mixed solution, last to adding the phenylformic acid of 1.8 parts and be stirred in mixed solution, mix again, obtain the compound cuts liquid of manufacturing for solar silicon wafers.
Embodiment 4
The cetomacrogol 1000 of 8.9 parts is fully dissolved in the ethylene glycol of 70 parts, stir to add the trolamine boric acid ester of 1 part and be stirred in backward mixed solution and mix, to adding the silicone antifoam agent SE-47 of 10 parts and be stirred in mixed solution, mix again, and then mix to adding the TamolNN dispersion agent of 10 parts and be stirred in mixed solution, last to adding the propylparaben of 0.1 part and be stirred in mixed solution, mix again, obtain the compound cuts liquid of manufacturing for solar silicon wafers.
Embodiment 5
The mixture of the glycerol of 10 parts and polyoxyethylene glycol 800 is fully dissolved in the ethylene glycol of 84 parts, stir to add the benzotriazole of 3.4 parts and be stirred in backward mixed solution and mix, to adding the silicone antifoam agent SE-47 of 1.5 parts and be stirred in mixed solution, mix again, and then mix to adding the Tamol NN dispersion agent of 0.1 part and be stirred in mixed solution, last to adding the phenylformic acid of 10 parts and be stirred in mixed solution, mix again, obtain the compound cuts liquid of manufacturing for solar silicon wafers.
With the compound cuts liquid of embodiment 1 to embodiment 5 and the cutting liquid in market, prepare respectively cutting mortar, the volume ratio of cutting liquid and SiC is 1:0.95, and through cutting liquid, to the dispersion experiment of silicon carbide and cutting silicon wafer experiment, experimental result is as follows:
| ? | The height of the standing one day silicon carbide of mortar of preparation | Cutting silicon wafer yield rate |
| Embodiment 1 | 10cm | 99.0% |
| Embodiment 2 | 9.5cm | 99.5% |
| Embodiment 3 | 10.5cm | 99.1% |
| Embodiment 4 | 11cm | 99.4% |
| Embodiment 5 | 10cm | 99.5% |
| PEG mortar | 11cm | 99.3% |
The PEG good dispersity of selling on compound cuts liquor ratio of the present invention market as can be seen from the above table, has guaranteed yield rate to a certain extent, reduces production costs.
Embodiment 6
The mixture of the Macrogol 200 of 15 parts and poly(oxyethylene glycol) 400 is fully dissolved in the ethylene glycol of 80 parts, stir to add the mixture of the benzotriazole of 8 parts and trolamine in backward mixed solution and be stirred to and mix, to adding the mixture of the SRECN defoamer of 0.5 part and dimethyl silicone oil in mixed solution and being stirred to, mix again, and then mix to adding the mixture of the Tamol NN dispersion agent of 8 parts and sodium methylene bis-naphthalene sulfonate in mixed solution and being stirred to, last to adding the mixture of the phenylformic acid of 3 parts and propylparaben in mixed solution and being stirred to, mix again, obtain the compound cuts liquid of manufacturing for solar silicon wafers.
Embodiment 7
By the poly(oxyethylene glycol) 400 of 13 parts, the mixture of polyoxyethylene glycol 800 and cetomacrogol 1000 is fully dissolved in the ethylene glycol of 85 parts, stir to add the trolamine of 5 parts and be stirred in backward mixed solution and mix, to adding the mixture of the dimethyl silicone oil of 5 parts and DE889 defoamer in mixed solution and being stirred to, mix again, and then mix to adding the sodium methylene bis-naphthalene sulfonate of 1 part and be stirred in mixed solution, last to adding the mixture of the propylparaben of 6 parts and isoquinolines in mixed solution and being stirred to, mix again, obtain the compound cuts liquid of manufacturing for solar silicon wafers.
Embodiment 8
The mixture of the glycerol of 18 parts and Macrogol 200 is fully dissolved in the ethylene glycol of 90 parts, stir to add the mixture of the benzotriazole of 0.5 part and trolamine boric acid ester in backward mixed solution and be stirred to and mix, to adding the mixture of the DE889 defoamer of 8 parts and silicone antifoam agent SE-47 in mixed solution and being stirred to, mix again, and then mix to adding the sodium methylene bis-naphthalene sulfonate of 0.5 part and be stirred in mixed solution, last again to the phenylformic acid that adds 8 parts in mixed solution, the mixture of propylparaben and isoquinolines being stirred to mixes, obtain the compound cuts liquid of manufacturing for solar silicon wafers.
Above content is only explanation technological thought of the present invention; can not limit protection scope of the present invention with this; every technological thought proposing according to the present invention, any change of doing on technical scheme basis, within all falling into the protection domain of the claims in the present invention book.
Claims (9)
1. a compound cuts liquid of manufacturing for solar silicon wafers, is characterized in that, according to volume parts meter, comprises following component:
2. the compound cuts liquid of manufacturing for solar silicon wafers according to claim 1, is characterized in that: also comprise the viscosity modifier of 5～20 parts.
3. the compound cuts liquid of manufacturing for solar silicon wafers according to claim 2, is characterized in that: described viscosity modifier is one or more of glycerol, Macrogol 200, poly(oxyethylene glycol) 400, polyoxyethylene glycol 800 or cetomacrogol 1000.
4. the compound cuts liquid of manufacturing for solar silicon wafers according to claim 1, is characterized in that: described inhibiter is one or more in benzotriazole, trolamine or trolamine boric acid ester.
5. the compound cuts liquid of manufacturing for solar silicon wafers according to claim 1, is characterized in that: described defoamer is one or more in SRECN defoamer, dimethyl silicone oil, DE889 defoamer or silicone antifoam agent SE-47.
6. the compound cuts liquid of manufacturing for solar silicon wafers according to claim 1, is characterized in that: described dispersion agent is Tamol NN dispersion agent or sodium methylene bis-naphthalene sulfonate.
7. the compound cuts liquid of manufacturing for solar silicon wafers according to claim 1, is characterized in that: described sanitas is one or more in phenylformic acid, propylparaben or isoquinolines.
8. a preparation method for the compound cuts liquid of manufacturing for solar silicon wafers, is characterized in that, comprises the following steps:
The viscosity modifier of 5～20 parts is fully dissolved in the ethylene glycol of 70～90 parts, stir to add the inhibiter of 0.1～10 part and be stirred in backward mixed solution and mix, to adding the defoamer of 0.1～10 part and be stirred in mixed solution, mix again, and then mix to adding the dispersion agent of 0.1～10 part and be stirred in mixed solution, last to adding the sanitas of 0.1～10 part and be stirred in mixed solution, mix again, obtain the compound cuts liquid of manufacturing for solar silicon wafers.
9. the preparation method of the compound cuts liquid of manufacturing for solar silicon wafers according to claim 8, is characterized in that: described viscosity modifier is one or more of glycerol, Macrogol 200, poly(oxyethylene glycol) 400, polyoxyethylene glycol 800 or cetomacrogol 1000; Described inhibiter is one or more in benzotriazole, trolamine or trolamine boric acid ester; Described defoamer is one or more in SRECN defoamer, dimethyl silicone oil, DE889 defoamer or silicone antifoam agent SE-47; Described dispersion agent is Tamol NN dispersion agent or sodium methylene bis-naphthalene sulfonate; Described sanitas is one or more in phenylformic acid, propylparaben or isoquinolines.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104531274A (en) * | 2015-01-26 | 2015-04-22 | 欧美龙（南通）重防腐涂料有限公司 | Cutting liquid |
| CN104560339A (en) * | 2014-12-31 | 2015-04-29 | 镇江市港南电子有限公司 | Preparation method of efficient silicon wafer cutting fluid |
| CN104593128A (en) * | 2014-12-31 | 2015-05-06 | 镇江市港南电子有限公司 | Efficient silicon wafer cutting fluid |
| CN106753705A (en) * | 2016-11-16 | 2017-05-31 | 晶科能源有限公司 | A kind of line cuts open grout additive and a kind of line cuts open method |
| CN107162225A (en) * | 2017-05-23 | 2017-09-15 | 北京能泰高科环保技术股份有限公司 | Corrosion inhibiter and methods and applications for closed soft water recirculating cooling water system |
| CN107177404A (en) * | 2017-05-11 | 2017-09-19 | 济源石晶光电频率技术有限公司 | Water base free abrasive cutting liquid and its preparation method and application |
| CN108568914A (en) * | 2018-05-03 | 2018-09-25 | 浙江海顺新能源有限公司 | A kind of solar silicon wafers processing cutting method |
| CN111570950A (en) * | 2020-04-27 | 2020-08-25 | 苏州香榭轩表面工程技术咨询有限公司 | Environment-friendly electric spark wire cutting fluid and preparation method and application thereof |
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| CN102363738A (en) * | 2011-06-27 | 2012-02-29 | 镇江市港南电子有限公司 | Water base cutting fluid for cutting silicon wafers |
| CN103396875A (en) * | 2013-08-02 | 2013-11-20 | 镇江荣德新能源科技有限公司 | Cooling liquid for diamond-wire cutting equipment, and preparation method thereof |
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Patent Citations (2)
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| CN102363738A (en) * | 2011-06-27 | 2012-02-29 | 镇江市港南电子有限公司 | Water base cutting fluid for cutting silicon wafers |
| CN103396875A (en) * | 2013-08-02 | 2013-11-20 | 镇江荣德新能源科技有限公司 | Cooling liquid for diamond-wire cutting equipment, and preparation method thereof |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104560339A (en) * | 2014-12-31 | 2015-04-29 | 镇江市港南电子有限公司 | Preparation method of efficient silicon wafer cutting fluid |
| CN104593128A (en) * | 2014-12-31 | 2015-05-06 | 镇江市港南电子有限公司 | Efficient silicon wafer cutting fluid |
| CN104531274A (en) * | 2015-01-26 | 2015-04-22 | 欧美龙（南通）重防腐涂料有限公司 | Cutting liquid |
| CN106753705A (en) * | 2016-11-16 | 2017-05-31 | 晶科能源有限公司 | A kind of line cuts open grout additive and a kind of line cuts open method |
| CN107177404A (en) * | 2017-05-11 | 2017-09-19 | 济源石晶光电频率技术有限公司 | Water base free abrasive cutting liquid and its preparation method and application |
| CN107162225A (en) * | 2017-05-23 | 2017-09-15 | 北京能泰高科环保技术股份有限公司 | Corrosion inhibiter and methods and applications for closed soft water recirculating cooling water system |
| CN107162225B (en) * | 2017-05-23 | 2021-01-08 | 北京能泰高科环保技术股份有限公司 | Corrosion inhibitor for closed soft water circulating cooling water system, method and application |
| CN108568914A (en) * | 2018-05-03 | 2018-09-25 | 浙江海顺新能源有限公司 | A kind of solar silicon wafers processing cutting method |
| CN111570950A (en) * | 2020-04-27 | 2020-08-25 | 苏州香榭轩表面工程技术咨询有限公司 | Environment-friendly electric spark wire cutting fluid and preparation method and application thereof |
| CN111570950B (en) * | 2020-04-27 | 2021-03-23 | 苏州香榭轩表面工程技术咨询有限公司 | Environment-friendly electric spark wire cutting fluid and preparation method and application thereof |
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Application publication date: 20140730 |