CN104593128A - Efficient silicon wafer cutting fluid - Google Patents
Efficient silicon wafer cutting fluid Download PDFInfo
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- CN104593128A CN104593128A CN201410846985.XA CN201410846985A CN104593128A CN 104593128 A CN104593128 A CN 104593128A CN 201410846985 A CN201410846985 A CN 201410846985A CN 104593128 A CN104593128 A CN 104593128A
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- silicon wafer
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- wafer cutting
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Abstract
The invention discloses an efficient silicon wafer cutting fluid. The efficient silicon wafer cutting fluid comprises the following components in parts by weight: 20-40 parts of monoethanolamine, 5-13 parts of sodium dodecyl sulfate, 4-12 parts of polyethylene glycol, 25-36 parts of diethanolamine oleate, 7-10 parts of sulfurized fats and oils, 3-6 parts of oleamide, 19-35 parts of glycerol and 20-47 parts of water. By the cutting fluid, the dispersibility of the abrasive material can be effectively improved, the silicon wafer cutting yield is conductive to being increased and reaches 99%; a protective film can be formed on the surface of the silicon wafer, the smoothness of the silicon wafer finished product is increased so that the silicon wafer is easy to clean and the lubricating effect of cutting fluid is improved.
Description
Technical field
The present invention relates to a kind of cutting fluid, particularly the efficient silicon wafer cutting fluid of one.
Background technology
Along with the development of society; today that energy dilemma is day by day serious, develop new forms of energy and more and more received the concern of people, sun power is because device is pollution-free, renewable, without advantages such as region; more and more be subject to the favor of people, solar energy industry is also come more to be developed.And the maturation of adjoint solar photovoltaic industry, the use of silicon chip also gets more and more.Because silicon chip belongs to hard material, its cutting technique occupies very important position in complete processing.Silicon chip is by the mortar of line of cut supply with abrasive material, the cutting of silicon chip is realized by the abrasive wear principle between abrasive material, line of cut and silicon crystal, which can realize the cutting of multi-disc silicon chip, cutting efficiency is high, but owing to being have more friction between abrasive material and cutting wire, to the cooling of cutting wire and lubricating requirement higher., although have lubrication and heat conductivility preferably, there is the problem that cutting silicon wafer yield rate is low, cutting surfaces is coarse and be not easy cleaning in silicon wafer cutting fluid of the prior art.
Summary of the invention
Technical problem to be solved by this invention is to provide the silicon wafer cutting fluid that a kind of cutting surfaces is smooth, cutting yield rate is high.
In order to solve the problems of the technologies described above, a kind of silicon wafer cutting fluid efficiently of the present invention, by monoethanolamine 20-40 part, sodium laurylsulfonate 5-13 part, polyoxyethylene glycol 4-12 part, oleic acid diethanolamine 25-36 part, sulfuration grease 7-10 part, amine hydroxybenzene 3-6 part, glycerol 19-35 part, water 20-47 part forms, with weight parts.
The efficient silicon wafer cutting fluid of above-mentioned one, wherein, preferably, by monoethanolamine 29 parts, sodium laurylsulfonate 11 parts, polyoxyethylene glycol 7 parts, oleic acid diethanolamine 33 parts, sulfuration grease 9 parts, amine hydroxybenzene 5 parts, glycerol 25 parts, 37 parts, water composition, with weight parts.
The efficient silicon wafer cutting fluid of above-mentioned one, wherein, described water is deionized water.
The efficient silicon wafer cutting fluid of above-mentioned one, wherein, the weight ratio of described amine hydroxybenzene and glycerol is 1:5.
A kind of preparation method of efficient silicon wafer cutting fluid, wherein, comprise the following steps: first weigh each raw material, then, successively by monoethanolamine, sodium laurylsulfonate, polyoxyethylene glycol, oleic acid diethanolamine, sulfuration grease, amine hydroxybenzene, glycerol, water (counting by weight) imports in stirrer and stirs, and stir to obtain cutting fluid.
The preparation method of above-mentioned a kind of efficient silicon wafer cutting fluid, wherein, described churning time is 2min.
The preparation method of above-mentioned a kind of efficient silicon wafer cutting fluid, wherein, described whipping temp is 120 degree.
The preparation method of above-mentioned a kind of efficient silicon wafer cutting fluid, wherein, described stir speed (S.S.) is 120r/min.
The present invention can effectively improve abrasive material dispersiveness, is conducive to the yield rate improving silicon chip cutting, makes silicon chip cut yield rate and reaches 99.9%; And natural protective membrane can be formed at silicon chip surface, improve silicon chip finished surface slickness, while greatly improving the result of use of silicon chip, improve the lubricant effect of cutting fluid.
Embodiment
Below in conjunction with specific embodiment, the invention will be further described.
Embodiment one
A kind of cutting fluid efficiently, by monoethanolamine 29 parts, sodium laurylsulfonate 11 parts, polyoxyethylene glycol 7 parts, oleic acid diethanolamine 33 parts, sulfuration grease 9 parts, amine hydroxybenzene 5 parts, glycerol 25 parts, 37 parts, water composition, with weight parts, above-mentioned raw materials is put into successively stirrer to stir, whipping temp is 120 degree, with under the speed of 120r/min, stirs 2 minutes.
Performance index: by this cutting fluid and S
ic abrasive material is by 1: 1 ratio of weight and number mixing, and carry out silicon chip cutting, cutting blade number is 2000, and cutting yield rate is 99.99%, silicon chip easy cleaning.
Embodiment two
A kind of cutting fluid efficiently, by monoethanolamine 31 parts, sodium laurylsulfonate 9 parts, polyoxyethylene glycol 9 parts, oleic acid diethanolamine 25 parts, sulfuration grease 7 parts, amine hydroxybenzene 6 parts, glycerol 35 parts, 47 parts, water composition, with weight parts, above-mentioned raw materials is put into successively stirrer to stir, whipping temp is 120 degree, with under the speed of 120r/min, stirs 2 minutes.
Performance index: by this cutting fluid and S
ic abrasive material is by 1: 1 ratio of weight and number mixing, and carry out silicon chip cutting, cutting blade number is 2000, and cutting yield rate is 97.1%, silicon chip easy cleaning.
Embodiment three
A kind of cutting fluid efficiently, by monoethanolamine 20 parts, sodium laurylsulfonate 5 parts, polyoxyethylene glycol 4 parts, oleic acid diethanolamine 36 parts, sulfuration grease 10 parts, amine hydroxybenzene 3 parts, glycerol 19 parts, 20 parts, water composition, with weight parts, above-mentioned raw materials is put into successively stirrer to stir, whipping temp is 120 degree, with under the speed of 120r/min, stirs 2 minutes.
Performance index: by this cutting fluid and S
ic abrasive material is by 1: 1 ratio of weight and number mixing, and carry out silicon chip cutting, cutting blade number is 2000, and cutting yield rate is 98.3%, silicon chip easy cleaning.
Those of ordinary skill in the art will be appreciated that, above embodiment is only used to object of the present invention is described, and be not used as limitation of the invention, as long as in essential scope of the present invention, the change of the above embodiment, modification all will be dropped in the scope of claim of the present invention.
Claims (4)
1. an efficient silicon wafer cutting fluid, it is characterized in that, by monoethanolamine 20-40 part, sodium laurylsulfonate 5-13 part, polyoxyethylene glycol 4-12 part, oleic acid diethanolamine 25-36 part, sulfuration grease 7-10 part, amine hydroxybenzene 3-6 part, glycerol 19-35 part, water 20-47 part forms, with weight parts.
2. a kind of silicon wafer cutting fluid efficiently as claimed in claim 1, it is characterized in that, preferably, by monoethanolamine 29 parts, sodium laurylsulfonate 11 parts, polyoxyethylene glycol 7 parts, oleic acid diethanolamine 33 parts, sulfuration grease 9 parts, amine hydroxybenzene 5 parts, glycerol 25 parts, 37 parts, water composition, with weight parts.
3. a kind of silicon wafer cutting fluid efficiently as claimed in claim 1, it is characterized in that, described water is deionized water.
4. a kind of silicon wafer cutting fluid efficiently as claimed in claim 1, it is characterized in that, the weight ratio of described amine hydroxybenzene and glycerol is 1:5.
Priority Applications (1)
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CN201410846985.XA CN104593128A (en) | 2014-12-31 | 2014-12-31 | Efficient silicon wafer cutting fluid |
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CN201410846985.XA CN104593128A (en) | 2014-12-31 | 2014-12-31 | Efficient silicon wafer cutting fluid |
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CN201410846985.XA Pending CN104593128A (en) | 2014-12-31 | 2014-12-31 | Efficient silicon wafer cutting fluid |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106336813A (en) * | 2016-08-24 | 2017-01-18 | 安徽正田能源科技有限公司 | Silicon wafer scratch polishing agent and preparation method thereof |
CN107030904A (en) * | 2017-05-11 | 2017-08-11 | 济源石晶光电频率技术有限公司 | Crystalline substance stone roller cutting method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103695145A (en) * | 2013-12-31 | 2014-04-02 | 镇江市港南电子有限公司 | Novel silicon wafer cutting liquid |
CN103952211A (en) * | 2014-03-03 | 2014-07-30 | 西安通鑫半导体辅料有限公司 | Composite cutting fluid used for solar silicon wafer manufacturing and its preparation method |
-
2014
- 2014-12-31 CN CN201410846985.XA patent/CN104593128A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103695145A (en) * | 2013-12-31 | 2014-04-02 | 镇江市港南电子有限公司 | Novel silicon wafer cutting liquid |
CN103952211A (en) * | 2014-03-03 | 2014-07-30 | 西安通鑫半导体辅料有限公司 | Composite cutting fluid used for solar silicon wafer manufacturing and its preparation method |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106336813A (en) * | 2016-08-24 | 2017-01-18 | 安徽正田能源科技有限公司 | Silicon wafer scratch polishing agent and preparation method thereof |
CN107030904A (en) * | 2017-05-11 | 2017-08-11 | 济源石晶光电频率技术有限公司 | Crystalline substance stone roller cutting method |
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Application publication date: 20150506 |
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