CN102363330A - Cutting method for ultra-thin silicon chips - Google Patents
Cutting method for ultra-thin silicon chips Download PDFInfo
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- CN102363330A CN102363330A CN2011101830824A CN201110183082A CN102363330A CN 102363330 A CN102363330 A CN 102363330A CN 2011101830824 A CN2011101830824 A CN 2011101830824A CN 201110183082 A CN201110183082 A CN 201110183082A CN 102363330 A CN102363330 A CN 102363330A
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Abstract
The invention relates to a cutting method for ultra-thin silicon chips, which comprises the following steps that: 1) a guide wheel groove of a slicing machine is sawed to 0.28 to 0.30mm, the target thickness of the silicon chips is 120 to 160 microns, and a cutting line adopts a fixed grinding material cutting line; 2) processed crystal silicon rods are loaded into the slicing machine, the positions of the crystal rods are fixed, and the machine is preheated circularly; 3) after the machine heating ends, and the silicon chip cutting is carried out, wherein the machine speed is 0.3 to 0.9mm/min, the linear speed is 0 to 15m/s, and a two-way cutting process is adopted; 4) aqueous cutting liquid is adopted in the slicing process, and the cutting liquid always cyclically flows in the whole cutting process; and 5) after the cutting is finished, the machine is stopped, the rods are discharged, and the silicon chips are cleaned and sorted. The cutting method can be used for scale production of solar level silicon chips with the thickness being 120 microns to 160 microns, the chip yield of the silicon chips is improved by more than 10 percent, and the silicon cost of the photovoltaic power generation is greatly reduced.
Description
Technical field
The present invention relates to a kind of cutting method of silicon chip, especially a kind of cutting method of ultra thin silicon wafers.
Background technology
In solar energy-level silicon wafer cutting, the process of employing generally is at present: utilize the motion of steel wire to drive the SiC sand with cutting power silicon rod is carried out grinding, silicon rod finally is processed to silicon chip.
Yet in traditional cutting technique; SiC particle with cutting power is to stick to cutting steel wire surface through the PEG with adhesive capacity; Because the SiC particle can move freely under the external force situation, causes the not skewness at the diverse location SiC of silicon chip particle, and is relatively poor for the surface accuracy control ratio of silicon chip like this; Particularly can't reach the solar energy-level silicon wafer standard-required for 160um thickness with the control of the precision of lower silicon slice, it is very low to cut into power.
Summary of the invention
The technical problem that the present invention will solve is: propose a kind of method of utilizing multi-thread cutting equipment to cut the following thickness solar energy-level silicon wafer of 160 μ m.
The technical scheme that the present invention adopted is: a kind of cutting method of ultra thin silicon wafers may further comprise the steps:
1) the guide wheel grooving saw of slicer is 0.28～0.30mm, silicon chip target thickness 120～160 μ m, and line of cut adopts the fixed-abrasive line of cut;
2) with the crystal silicon rod of handling well the slicer of packing into, fix the crystal bar position, machine circulation in advance;
3) after hot machine finishes, carry out the silicon chip cutting, wherein platform speed is 0.3～0.9mm/min, and linear velocity is 0～15m/s, adopts two-way cutting technique;
4) make the use cutting fluid in the slicing processes, in the whole cutting process, cutting fluid circulates always;
5) after cutting finishes, shutdown, excellent down, silicon chip cleans and sorting.
Specifically, the fixed-abrasive on the fixed-abrasive line of cut is the BC of high rigidity in the described step 1)
X, BN
X, diamond or hardness is greater than the material of silicon.The fixed-abrasive line of cut is on common steel wire, the abrasive grain of high rigidity to be electroplated or is fixed on the matrix through resinous coat, and diameter range is at 0.1mm～0.3mm.The fixed-abrasive line of cut is accomplished the ultra thin silicon wafers cutting under water-based cutting liquid system.
Need to prove that in whole cutting process, cutting fluid circulates always, to play lubricated and thermolysis.
The invention has the beneficial effects as follows: can accurately control the precision of silicon chip through using the fixed-abrasive steel wire; Adjust suitable platform differential surface speed simultaneously; Can large-scale production 120 μ m～160 μ m thickness solar energy-level silicon wafers; The piece rate that improves silicon chip reduces the silicon cost of photovoltaic generation more than 10% greatly.
The specific embodiment
Combine embodiment that the present invention is done further detailed explanation now.
A kind of cutting method of ultra thin silicon wafers may further comprise the steps:
1) the guide wheel grooving saw of slicer is 0.29mm, silicon chip target thickness 140 μ m, and line of cut adopts the fixed-abrasive line of cut;
2) with the crystal silicon rod of handling well the slicer of packing into, fix the crystal bar position, machine circulation in advance;
3) after hot machine finishes, carry out the silicon chip cutting, wherein platform speed is 0.73mm/min, and linear velocity is 10m/s, adopts two-way cutting technique;
4) make the use cutting fluid in the slicing processes, in the whole cutting process, cutting fluid circulates always;
5) after cutting finishes, shutdown, excellent down, silicon chip cleans and sorting.
The silicon chip qualification rate reaches 92%.
What describe in the above specification is the specific embodiment of the present invention; Various not illustrating constitutes restriction to flesh and blood of the present invention; Under the those of ordinary skill of technical field after having read specification can to before the described specific embodiment make an amendment or be out of shape, and do not deviate from essence of an invention and scope.
Claims (4)
1. the cutting method of a ultra thin silicon wafers is characterized in that may further comprise the steps:
1) the guide wheel grooving saw of slicer is 0.28～0.30mm, silicon chip target thickness 120～160 μ m, and line of cut adopts the fixed-abrasive line of cut;
2) with the crystal silicon rod of handling well the slicer of packing into, fix the crystal bar position, machine circulation in advance;
3) after hot machine finishes, carry out the silicon chip cutting, wherein platform speed is 0.3～0.9mm/min, and linear velocity is 0～15m/s, adopts two-way cutting technique;
4) make the use cutting fluid in the slicing processes, in the whole cutting process, cutting fluid circulates always;
5) after cutting finishes, shutdown, excellent down, silicon chip cleans and sorting.
2. the cutting method of ultra thin silicon wafers as claimed in claim 1, it is characterized in that: the fixed-abrasive in the described step 1) on the fixed-abrasive line of cut is the BC of high rigidity
X, BN
X, diamond or hardness is greater than the material of silicon.
3. according to claim 1 or claim 2 the cutting method of ultra thin silicon wafers; It is characterized in that: the fixed-abrasive line of cut is on common steel wire, the abrasive grain of high rigidity to be electroplated or is fixed on the matrix through resinous coat in the described step 1), and diameter range is at 0.1mm～0.3mm.
4. according to claim 1 or claim 2 the cutting method of ultra thin silicon wafers, it is characterized in that: the fixed-abrasive line of cut in the described step 1) is accomplished the ultra thin silicon wafers cutting under water-based cutting liquid system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101830824A CN102363330A (en) | 2011-06-30 | 2011-06-30 | Cutting method for ultra-thin silicon chips |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101830824A CN102363330A (en) | 2011-06-30 | 2011-06-30 | Cutting method for ultra-thin silicon chips |
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| CN102363330A true CN102363330A (en) | 2012-02-29 |
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| CN2011101830824A Pending CN102363330A (en) | 2011-06-30 | 2011-06-30 | Cutting method for ultra-thin silicon chips |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103350460A (en) * | 2013-07-16 | 2013-10-16 | 锦州阳光能源有限公司 | Cutting technology for improving slice production rate of monocrystalline silicon and device of cutting technology |
| CN104118069A (en) * | 2014-07-25 | 2014-10-29 | 苏州晶樱光电科技有限公司 | Cutting technology for solar silicon slice |
| CN106671303A (en) * | 2016-12-09 | 2017-05-17 | 西安烽火光伏科技股份有限公司 | Treatment method adopted after abnormal shutdown of multi-wire cutting equipment |
| CN107097362A (en) * | 2016-02-19 | 2017-08-29 | 友达晶材股份有限公司 | Wafer slicing machine, wheel set structure thereof and wafer slicing method |
| CN107116711A (en) * | 2017-05-15 | 2017-09-01 | 南通综艺新材料有限公司 | One kind carries out silicon ingot cutting technique using new steel wire and solvent |
| CN112078038A (en) * | 2020-07-30 | 2020-12-15 | 长治高测新材料科技有限公司 | Cutting method of silicon wafer with thickness of below 140 microns |
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| JPH11198016A (en) * | 1998-01-14 | 1999-07-27 | Shin Etsu Handotai Co Ltd | Work cutting fluid, work cutting agent and work cutting method |
| CN1938136A (en) * | 2004-03-30 | 2007-03-28 | 索拉克斯有限公司 | Method and apparatus for cutting ultra thin silicon wafers |
| CN101138869A (en) * | 2007-10-12 | 2008-03-12 | 南京航空航天大学 | Monocrystalline silicon high-efficient composite cutting method and cutting system thereof |
| CN201736357U (en) * | 2010-07-19 | 2011-02-09 | 厦门致力金刚石科技股份有限公司 | Diamond fretsaw |
| CN201800138U (en) * | 2010-08-17 | 2011-04-20 | 邢台晶龙电子材料有限公司 | Guide wheel for cutting solar energy level silicon chip |
| CN102059748A (en) * | 2010-12-13 | 2011-05-18 | 天津市环欧半导体材料技术有限公司 | Process for cutting silicon chip by using steel wire with diameter of 0.11 millimeter |
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2011
- 2011-06-30 CN CN2011101830824A patent/CN102363330A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11198016A (en) * | 1998-01-14 | 1999-07-27 | Shin Etsu Handotai Co Ltd | Work cutting fluid, work cutting agent and work cutting method |
| CN1938136A (en) * | 2004-03-30 | 2007-03-28 | 索拉克斯有限公司 | Method and apparatus for cutting ultra thin silicon wafers |
| CN101138869A (en) * | 2007-10-12 | 2008-03-12 | 南京航空航天大学 | Monocrystalline silicon high-efficient composite cutting method and cutting system thereof |
| CN201736357U (en) * | 2010-07-19 | 2011-02-09 | 厦门致力金刚石科技股份有限公司 | Diamond fretsaw |
| CN201800138U (en) * | 2010-08-17 | 2011-04-20 | 邢台晶龙电子材料有限公司 | Guide wheel for cutting solar energy level silicon chip |
| CN102059748A (en) * | 2010-12-13 | 2011-05-18 | 天津市环欧半导体材料技术有限公司 | Process for cutting silicon chip by using steel wire with diameter of 0.11 millimeter |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103350460A (en) * | 2013-07-16 | 2013-10-16 | 锦州阳光能源有限公司 | Cutting technology for improving slice production rate of monocrystalline silicon and device of cutting technology |
| CN104118069A (en) * | 2014-07-25 | 2014-10-29 | 苏州晶樱光电科技有限公司 | Cutting technology for solar silicon slice |
| CN107097362A (en) * | 2016-02-19 | 2017-08-29 | 友达晶材股份有限公司 | Wafer slicing machine, wheel set structure thereof and wafer slicing method |
| CN107097362B (en) * | 2016-02-19 | 2020-04-17 | 友达晶材股份有限公司 | Wafer slicing machine, wheel set structure thereof and wafer slicing method |
| CN106671303A (en) * | 2016-12-09 | 2017-05-17 | 西安烽火光伏科技股份有限公司 | Treatment method adopted after abnormal shutdown of multi-wire cutting equipment |
| CN106671303B (en) * | 2016-12-09 | 2018-09-04 | 西安烽火光伏科技股份有限公司 | A kind of multi-wire saw unit exception shut down after processing method |
| CN107116711A (en) * | 2017-05-15 | 2017-09-01 | 南通综艺新材料有限公司 | One kind carries out silicon ingot cutting technique using new steel wire and solvent |
| CN112078038A (en) * | 2020-07-30 | 2020-12-15 | 长治高测新材料科技有限公司 | Cutting method of silicon wafer with thickness of below 140 microns |
| CN112078038B (en) * | 2020-07-30 | 2022-07-22 | 乐山高测新能源科技有限公司 | Cutting method of silicon wafer with thickness of below 140 microns |
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Application publication date: 20120229 |