CN201800138U

CN201800138U - Guide wheel for cutting solar energy level silicon chip

Info

Publication number: CN201800138U
Application number: CN2010202941825U
Authority: CN
Inventors: 刘彬国; 何京辉; 赵峰; 菅书永
Original assignee: Xingtai Jinglong Electronic Material Co Ltd
Current assignee: Xingtai Jinglong Electronic Material Co Ltd
Priority date: 2010-08-17
Filing date: 2010-08-17
Publication date: 2011-04-20
Anticipated expiration: 2020-08-17

Abstract

The utility model discloses a guide wheel for cutting a solar energy level silicon chip. A guide groove is arranged on the excircle of the guide wheel. The key technology of the utility model is that the groove space of adjacent guide grooves is gradually reduced from the left end to the right end of the guide wheel; the groove space meets the formula that Dn=a-bx[(n-1)/(N-1)], wherein N is equal to L/a; in the formula, a represents the first groove space, b represents the reduction coefficient, n represents the serial number of the grooves, N represents the total number of the grooves, L represents the length of the guide wheel and n and N are respectively positive integers. The silicon chip cut by the guide wheel has the uniform thickness and high material utilization rate.

Description

A kind of guide wheel that is used to cut solar energy-level silicon wafer

Technical field

The utility model relates to a kind of silicon single crystal rod cutting equipment, especially a kind of guide wheel that is used to cut solar energy-level silicon wafer.

Background technology

Low-carbon (LC) life has become the fashion of current society, more and more causes people's attention for the use of new forms of energy, and this has brought opportunity for the development of photovoltaic industry undoubtedly.The cutting of silicon chip is a primary condition of manufacturing solar cell, and solar energy-level silicon wafer then is a development in future trend, and silicon chip is thin more, can improve the silicon materials utilization rate, reduces production costs.About about 200um, the silicon materials utilization rate is low greatly for the silicon wafer thickness that is used to now to make solar cell on the market.Generally to be the line of cut that adopts 0.1mm or other diameters in the equally distributed isometrical groove, by the at the uniform velocity rotation of guide wheel, make line of cut carry SIC cutting liquid secretly silicon single crystal rod ground on the guide wheel its production method, cuts into silicon chip.Because there are wearing and tearing in line of cut when cutting, the line that the line footpath when causing cutting outlet makes than inlet wire directly attenuates.Thereby cause the silicon wafer thickness that cuts out inhomogeneous, the difficulty that this has brought letter sorting, processing for the manufacturer in downstream, and cause waste of material.

The utility model content

The technical problems to be solved in the utility model provides a kind of guide wheel that is used to cut solar energy-level silicon wafer, and the silicon wafer thickness that this guide wheel cuts out is even, the stock utilization height.

For solving the problems of the technologies described above, technical solution adopted in the utility model is: a kind of guide wheel that is used to cut solar energy-level silicon wafer, have guide groove on the cylindrical of guide wheel, its key technology is that the slot pitch of adjacent guide groove successively decreases by following formula from left end to the right-hand member of guide wheel;

Described slot pitch Dn=a-bx[(n-1)/(N-1)], N=L/a wherein,

In the formula, a is first slot pitch, and b is a coefficient of diminution, and n is the sequence number of groove, and N is total groove number, and L is a guide wheel length, and wherein n and N are positive integer.The left end of guide wheel is its head, inlet wire position end just, and right-hand member is an afterbody, just goes out the line position end.

The above-mentioned first slot pitch a is determined by the thickness of product, the line footpath of the golden steel wire of cutting and the granularity of carborundum.

Further improve, the outer surface of above-mentioned guide wheel is coated with the polyurethane rubber layer.

Adopt the beneficial effect that technique scheme produced to be: the silicon wafer thickness that employing the utility model cuts out is about 150um, make the silicon single crystal rod of unit length can cut out more silicon chip, per kilogram silicon raw material can have more 7～8, improve the silicon materials utilization rate, reduced the silicon chip manufacturing cost; And can effectively guarantee the thickness of silicon chip, silicon wafer thickness is even; After adopting the utility model, line of cut (steel wire) running steadily can reduce the wearing and tearing to the V-type groove in the process of silicon chip cutting, increases the service life.

Description of drawings

Fig. 1 is a schematic diagram of the present utility model;

Wherein, 1 represents guide wheel, and 2 represent guide groove.

The specific embodiment

Below in conjunction with the drawings and specific embodiments the utility model is described in further detail.

Participate in accompanying drawing 1, guide wheel 1 is slotted, its inlet wire position end to the fluting spacing that goes out the line position end is progressively successively decreased, its slot pitch Dn=a-bx[(n-1)/(N-1)], wherein, a is first slot pitch, b is a coefficient of diminution, n is the sequence number of groove, and N is total groove number, N (total groove number)=L (guide wheel length)/a (first slot pitch); The described first slot pitch a determines that by the thickness of product, the line footpath of the golden steel wire of cutting and the granularity of carborundum coefficient of diminution b is 0.012.The line of cut that uses in the utility model is the 110mm steel wire, and guide wheel first slot pitch is 0.297mm or 0.285mm, i.e. a=0.297mm (or 0.285mm), and coefficient of diminution b=0.012, guide wheel length L=320mm, groove depth is 0.22mm.The one-tenth-value thickness 1/10 error of silicon wafer that the utlity model has cutting is little, increases the advantage of output.

Further improve, apply the polyurethane rubber layer at the guide wheel outer surface, polyurethane rubber guide wheel material is compared with the General Purpose Rubber material, has higher mechanical strength (for 2～3 times of natural rubber); Remarkable wearability (being 5～10 times of natural rubbers); Outstanding resistance to compression; Hardness range is wide, and still has high resiliency (this is the unexistent characteristics of other glue kinds) under high rigidity; The surface smoothness height; Machining property is superior; Also much higher with metal caking property than General Purpose Rubber, relatively be fit to use under a constant linear speed and the high pressure, it has satisfied the instructions for use of photovoltaic section industry guide wheel this just excellent material performance and processing characteristics.

Claims

1. a guide wheel that is used to cut solar energy-level silicon wafer has guide groove (2) on the cylindrical of guide wheel (1), it is characterized in that: the slot pitch of adjacent guide groove (2) is successively decreased by following formula from left end to the right-hand member of guide wheel (1);

Described slot pitch Dn=a-b x[(n-1)/(N-1)], N=L/a wherein,

In the formula, a is first slot pitch, and b is a coefficient of diminution, and n is the sequence number of groove, and N is total groove number, and L is a guide wheel length, and wherein n and N are positive integer.

2. the guide wheel that is used to cut solar energy-level silicon wafer according to claim 1 is characterized in that: the outer surface at described guide wheel (1) is coated with one deck polyurethane rubber layer.