CN102851109B - Cooling liquid for diamond cutting line to cut solar silicon chips - Google Patents
Cooling liquid for diamond cutting line to cut solar silicon chips Download PDFInfo
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- CN102851109B CN102851109B CN201210356571.XA CN201210356571A CN102851109B CN 102851109 B CN102851109 B CN 102851109B CN 201210356571 A CN201210356571 A CN 201210356571A CN 102851109 B CN102851109 B CN 102851109B
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Abstract
The invention provides a cooling liquid for a diamond cutting line to cut solar silicon chips, which comprises the following components by mass percent: 10 to 90 percent of water, 2 to 86 percent of polyethylene glycol, 1 to 25 percent of dispersing agent, 0.1 to 20 percent of chelate, 0.5 to 15 percent of metal corrosion inhibitor and 0.1 to 2 percent of defoamer. The cooling liquid can be matched with the diamond cutting line for cutting, has good lubricating and cooling effects, effectively reduces the line breaking rate, has a good dispersant effect on silicon powder and iron tramp produced during the cutting process, guarantees the surface performance of the silicon chips, is low in cost and is pollution-free and environmentally friendly.
Description
Technical field
The present invention relates to a kind of cooling fluid for diamond wire cutting solar silicon wafers.
Background technology
Along with the fast development of world economy, energy consumption is increasing, and countries in the world are the application of demand new forms of energy and universal all.The greenhouse gases effect causing due to Carbon emission causes global warming and causes natural disaster, and countries in the world are especially strong to the demand of clean renewable energy source.Since the global crisis causing in U.S.'s subprime crisis in 2007 spreads and expands, for stimulating economic growth, each state has all passed through the measure that renewable energy source is used in more positive encouragement.U.S.'s Obama administration proposes to invest 1,500 hundred million dollars for clean energy at coming 10 years; European Union's target setting accounts for renewable energy source to use the ratio of the energy to bring up to 20% at the year two thousand twenty; Japan proposes to make more than 70% New Dwelling that solar panel (about 70GW) is installed in the year two thousand thirty.Not enough for alleviating photovoltaic domestic needs, on March 26th, 2009, China Ministry of Finance announces will promote to implement " solar roof project " demonstration project.The Ministry of Finance, house and town and country construction portion combine the < < of appearance about clearly proposition in the implementation guideline > > of quickening propelling solar photoelectric Application in Building, implement " solar roof project " to, photoelectricity Application in Building demonstration project is given fund subsidy, encourages technical progress to put into effect a series of principal measures such as relevant financial support policy, the support on policy of strengthen construction field to scientific and technical innovation, encouragement local government.Present stage is actively pushed forward the photoelectricity architecture-integral demonstrations such as sun power roof, photovoltaic curtain wall in economically developed, the good big and medium-sized cities of Industry Foundation; Actively be supported in rural area and the generating of remote districts development off-grid type, the relevant regulations such as implement that power transmission is gone to the countryside, have indicated direction to especially the application of heliotechnics.The photoelectricity architecture-integrals such as sun power roof, photovoltaic curtain wall of take are breach, may allow in a short time people see and many benefits of applied solar energy also be conducive to spread from now on, excite the enthusiasm of capital of property investment field of solar energy.The new forms of energy policy of various countries perhaps will become next our after this one of the important policies of 15 years world developments that affect.Copenhagen Climate Conference of 2009 has waken, has strengthened the consciousness that people pay close attention to clean energy again up.Follow the application of new forms of energy and popularize, the rapid growth impetus of photovoltaic industry is further strengthened and is paid attention to.As photovoltaic industry cutting silicon single crystal, the indispensable high-end auxiliary material of polysilicon, cutting steel wire, in the production chain of photovoltaic industry, has thundering importance, so policy risk, the market risk are all less.
According to EPIA prediction, under normal circumstances, global solar installed capacity rises to the 7.2GW from 2009 13.7GW of 2014, if consider policy stimulus, within 2014, will reach 30GW.With regard to China, crystal silicon solar energy battery output in 2008 is 1.78GW, crystal silicon solar energy battery output in 2009 is 3.5GW, by the average speed of growth 40%-50% measuring and calculating nearly ten years of sun power industry, to China crystal silicon solar batteries output 10GW left and right in 2012.1MW approximately needs 10 tons of crystalline silicons in the world at present, and China due to cutting technique relative mistake some, 1MW needs the crystalline silicon of 12 tons of left and right.One ton of crystalline silicon of every cutting approximately needs the cutting steel wire of 700-800 kilogram, calculates accordingly, and by 2012, the domestic cutting steel wire that needs was altogether ten thousand tons of 8-9.As photovoltaic industry cutting silicon single crystal, the indispensable high-end auxiliary material of polysilicon, cutting steel wire is second largest running stores in solar silicon wafers production process, is only second to silicon materials.Within 2010, cutting steel wire domestic market capacity is 3,000,000,000 yuan of left and right, estimates that in the industry the compound growth of industry is more than 15%.Domestic needs is 40,000 tons of left and right (are converted to sales volume, by conservative price evaluation, are about 4,000,000,000 yuans) now.
The thickness of silicon chip no matter, crystal silicon photovoltaic cell is manufactured commercial city the quality of silicon chip has been proposed to high requirement.Silicon chip can not have surface damage (hair line, the scroll saw marking), and pattern defect (crooked, concavo-convex, became uneven) will minimize, and to extra back-end processing, also will drop to minimum as the requirement of polishing etc.
In order to meet market for the more low-cost and more requirement of high productivity, scroll saw of new generation must promote cutting speed in feet per minute, thereby improves cutting load.Thinner line of cut and thinner silicon chip have all promoted productivity, and meanwhile, advanced technology controlling and process can be managed line of cut pulling force and be kept the stability of line of cut with this.More the scroll saw system of high productivity can reduce board quantity under same silicon chip output.Therefore, manufacturers can significantly reduce the cost of equipment, operator and maintenance.
The consumption that reduces silicon chip has namely directly reduced every watt of cost of solar electric power.Silicon chip supplier wishes oneself to control the integration of slice process, and diamond wire need to be used in Crystalline Silicon PV Module production commercial city.
Silicon single crystal and polysilicon photovoltaic technology all need to use it.The special-purpose diamond wire of most of photovoltaics is that silicon chip supplier buys.Their general growing silicon ingot or silico briquette, the cutting process of silicon raw material is become to silicon chip, final sales to photovoltaic cell manufacturers for the manufacture of battery.
Along with the concern of the mankind to living environment, there are the product of pollution and technique will be regarded as backward products and technique, will be eliminated or forbid.Aspect the cutting processing of superhard, crisp material, by the abrasive material dissociating, carried out the processing technology of line cutting owing to there being a large amount of pollutions, and have inefficient problem; And diamond wire compares other handicraft product and have very large advantage, efficiency is high, the life-span is long, is subject to the favor of industry, and the processing technology of being carried out line cutting by the abrasive material dissociating certainly will be replaced by diamond wire.In areas such as American-European wests, used diamond wire line to carry out line cutting processing on a large scale, started at home progressively to expand, to estimate will all change in 2-3, this will produce a huge market volume.
And diamond wire cooling fluid is diamond wire matching used material in cutting process, just at present, diamond wire cooling fluid great majority are directly used polyoxyethylene glycol (PEG), although have certain effect to a certain extent, it also exists a lot of shortcomings: more responsive to water; Disperse the effect of silica flour and iron powder bad; There is certain environmental pollution to exist; Expensive.
Domestic existing diamond wire cooling fluid is mainly divided into three kinds:
Mono-kind of A is the cooling fluid of polyethylene glycol system, for example patent CN 102352278A is said, it mainly take polyoxyethylene glycol as main, add a certain proportion of rust-preventive agent, emulsifying agent and defoamer, this cooling fluid advantage is that cooling performance is better, for impurity such as silica flours, has certain suspension and sequestering action, shortcoming is that cost is higher, has certain environmental pollution.
Mono-kind of B is small molecular alcohol, ether, phenols combination cooling liquid, for example patent CN 102433190 A are said, it mainly take propylene glycol as main body, the cooling fluid forming by adding other ethers and the configuration of classification additive, the advantage of this cooling fluid is that the performance of silicon chip surface is had some improvement, but it is high that its shortcoming is cost, and cooling performance is general, for the dissemination of the impurity such as silica flour, not very desirable.
Mono-kind of C is water base cooling fluid, mainly to take water as main, by adding dispersion agent, sequestrant, tensio-active agent, defoamer, a kind of cooling fluid that viscosity modifier forms, mainly take japanese product as main on this cooling fluid market, and this cooling fluid cost is low, environmental friendliness, but the problem that will solve is exactly how to disperse the impurity such as silica flour.Domestic also have indivedual companies to have similar water base product, but need to be further improved in performance.
Summary of the invention
The technical problem to be solved in the present invention is: overcome existing water base cooling fluid to the silica flour producing in cutting process and the undesirable deficiency of iron contamination dispersion effect, a kind of cooling fluid for diamond wire cutting solar silicon wafers is provided.
For solving the problems of the technologies described above the technical solution used in the present invention, be: a kind of cooling fluid for diamond wire cutting solar silicon wafers, should be for the cooling fluid composition mass percent of diamond wire cutting solar silicon wafers: water 10～90%, polyoxyethylene glycol 2～86%, dispersion agent 1～25%, inner complex 0.1～20%, metal corrosion inhibitor 0.5～15%, defoamer 0.1%～2%;
In cutting process, have a large amount of silica flours and produce, and occur with the impurity of some iron and silicon carbide, therefore, select suitable dispersion agent to disperse silica flour, prevent caking, the surface quality to silicon chip is had a great impact.Described dispersion agent is one or more homopolymer that obtain for monomeric unit in vinylformic acid, methylpropanoic acid acid, ethylacrylic acid, olefin sulfonic acid, styrene sulfonic acid, maleic anhydride, alkyl propenyloxy group sulfonic acid or acrylamido sulfonic acid or one or more in multipolymer;
Because water base cooling fluid flows in the circulation line of board, for the pipeline of stainless steel, have for a long time corrosion and produce, therefore must in cooling fluid, add corresponding sequestrant, suppress the generation of metallic corrosion.The preferred hydramine of described sequestrant, one or more in polyamino organic amine or amino acid.
Described water is deionized water, and quality optimization is 20～80% of cooling fluid total amount.
Described polyoxyethylene glycol molecular-weight average is 200-10000, and quality optimization is 5～80% of cooling fluid total amount.
Described dispersion agent quality optimization is 3～15% of cooling fluid total amount.
Described metal corrosion inhibitor is preferably from phenols, as phenol, 1, and 2-dihydroxyl phenol, pyrocatechol, Nickel thiolates, para hydroxybenzene phenol or pyrogallol; Carboxylic-acid, as phenylformic acid, para-amino benzoic acid (PABA), phthalic acid (PA), gallic acid (GA), Whitfield's ointment or citric acid; Carboxylic acid esters, as methyl p-aminobenzoate, Methyl Benzene-o-dicarboxylate or Tenox PG; Anhydrides, as one or more in diacetyl oxide or caproic anhydride.Described metal corrosion inhibitor quality optimization is 2～6% of cooling fluid total amount.
In cutting process, because cooling fluid has Bubble formation in circulating process, this bubble can cause bad impact to cutting, therefore should add defoamer, described defoamer is one or more in polymethyl siloxane, PES-4, poly-propyl-siloxane, poly-butyl siloxanes, polymethy ethylsiloxane and polydimethylsiloxane.
At sequestrant, the hydramine described in selecting be preferably one or more of thanomin, diethanolamine or trolamine, preferred trolamine; Described polyamino organic amine is preferably one or more in diethylenetriamine, pentamethyl-diethylenetriamine or polyethylene polyamine, preferably pentamethyl-diethylenetriamine; Described amino acid is preferably one or more in 2-Padil, 2-benzaminic acid, iminodiethanoic acid, nitrilotriacetic acid(NTA) or ethylenediamine tetraacetic acid (EDTA), preferably iminodiethanoic acid; Described sequestrant preferably quality optimization is 1～10% of cooling fluid total amount.
The invention has the beneficial effects as follows: the cutting of the fine cooperation diamond wire of cooling fluid energy for diamond wire cutting solar silicon wafers of the present invention, lubrication is effective, effectively reduces outage; For the silica flour producing in cutting process and iron contamination, there is good dissemination, guaranteed the surface property of silicon chip; This cooling fluid cost is low, pollution-free, is a kind of environmental friendliness cooling fluid.
Embodiment
Embodiment:
Cooling fluid is to the dispersing property of silica flour and the detection to Corrosion of Stainless Steel inhibition:
Use cooling fluid to dissolve the silica flour that massfraction is 20%, sedimentation is after one week, more again shakes up, and detects cooling fluid to the dispersiveness of silica flour and redispersibility.
Claims (8)
1. for a cooling fluid for diamond wire cutting solar silicon wafers, it is characterized in that: should form mass percent for the cooling fluid of diamond wire cutting solar silicon wafers is: water 10～90%, polyoxyethylene glycol 2～86%, dispersion agent 1～25%, inner complex 0.1～20%, metal corrosion inhibitor 0.5～15%, defoamer 0.1%～2%;
Dispersion agent is one or more homopolymer that obtain for monomeric unit polymerization in vinylformic acid, ethylacrylic acid, olefin sulfonic acid, maleic anhydride, alkyl propenyloxy group sulfonic acid or acrylamido sulfonic acid or one or more in multipolymer; Inner complex is one or more in hydramine, polyamino organic amine or amino acid;
Described polyoxyethylene glycol molecular-weight average is 200-10000; Described metal corrosion inhibitor is one or more in phenols, carboxylic-acid, carboxylic acid esters or anhydrides; Described defoamer is one or more in polymethyl siloxane, PES-4, poly-propyl-siloxane, poly-butyl siloxanes, polymethy ethylsiloxane or polydimethylsiloxane.
2. the cooling fluid for diamond wire cutting solar silicon wafers according to claim 1, is characterized in that: described water is that deionized water, quality are 20～80% of cooling fluid total amount.
3. the cooling fluid for diamond wire cutting solar silicon wafers according to claim 1, is characterized in that: described polyoxyethylene glycol quality is 5～80% of cooling fluid total amount.
4. the cooling fluid for diamond wire cutting solar silicon wafers according to claim 1, is characterized in that: described dispersion agent quality is 3～15% of cooling fluid total amount.
5. the cooling fluid for diamond wire cutting solar silicon wafers according to claim 1, is characterized in that: metal corrosion inhibitor quality is 2～6% of cooling fluid total amount.
6. the cooling fluid for diamond wire cutting solar silicon wafers according to claim 5, is characterized in that: described phenols is phenol, 1 2-dihydroxyl phenol, pyrocatechol, Nickel thiolates, para hydroxybenzene phenol or pyrogallol; Carboxylic-acid is phenylformic acid, para-amino benzoic acid, phthalic acid, gallic acid, Whitfield's ointment or citric acid; Carboxylic acid esters is methyl p-aminobenzoate, Methyl Benzene-o-dicarboxylate or Tenox PG; Anhydrides is diacetyl oxide or caproic anhydride.
7. the cooling fluid for diamond wire cutting solar silicon wafers according to claim 1, is characterized in that: described inner complex quality is 1～10% of cooling fluid total amount.
8. according to the cooling fluid for diamond wire cutting solar silicon wafers described in claim 1 or 7, it is characterized in that: described hydramine is one or more of thanomin, diethanolamine or trolamine; Described polyamino organic amine is one or more in diethylenetriamine, pentamethyl-diethylenetriamine or polyethylene polyamine; Described amino acid is one or more in 2-Padil, 2-benzaminic acid, iminodiethanoic acid, nitrilotriacetic acid(NTA) or ethylenediamine tetraacetic acid (EDTA).
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| CN201210356571.XA CN102851109B (en) | 2012-09-21 | 2012-09-21 | Cooling liquid for diamond cutting line to cut solar silicon chips |
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Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103396875B (en) * | 2013-08-02 | 2015-02-25 | 镇江荣德新能源科技有限公司 | Cooling liquid for diamond-wire cutting equipment, and preparation method thereof |
| CN106318324A (en) * | 2015-07-09 | 2017-01-11 | 江苏太阳光伏科技有限公司 | Coolant for solder strips |
| EP3369797B1 (en) * | 2017-03-02 | 2021-01-06 | EKWB d.o.o. | Cooling liquid composition for a liquid cooling system for cooling a heat generating element arranged on a printed circuit board |
| CN109956517A (en) * | 2017-12-14 | 2019-07-02 | 丰田合成株式会社 | Ultraviolet light sterilizing unit and fluid sterilizing unit |
| CN108559609B (en) * | 2018-06-04 | 2021-03-02 | 保定良合新材料科技有限公司 | Diamond wire cutting fluid for solar silicon wafer processing |
| CN112297260A (en) * | 2019-07-29 | 2021-02-02 | 内蒙古中环光伏材料有限公司 | Method for controlling silicon powder concentration in solar silicon wafer cutting process |
| CN112342079A (en) * | 2020-11-11 | 2021-02-09 | 何虎林 | Water-based cutting fluid for diamond wire saw |
| CN112745808A (en) * | 2021-01-19 | 2021-05-04 | 广东石油化工学院 | Heat management system liquid and preparation method thereof |
| CN112961726A (en) * | 2021-03-16 | 2021-06-15 | 广东高景太阳能科技有限公司 | Cutting fluid for diamond wire cutting large-size silicon wafer and preparation process thereof |
| CN113930280B (en) * | 2021-11-02 | 2022-08-02 | 河北矽碳新材料科技有限公司 | Diamond wire cooling liquid and preparation method and application thereof |
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| US6383991B1 (en) * | 1998-04-03 | 2002-05-07 | Kao Corporation | Cutting oil composition |
| CN102071090A (en) * | 2009-11-20 | 2011-05-25 | 安集微电子（上海）有限公司 | Wire cutting solution for solar silicon slice |
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