CN102851109A - Cooling liquid for diamond cutting line to cut solar silicon chips - Google Patents
Cooling liquid for diamond cutting line to cut solar silicon chips Download PDFInfo
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- CN102851109A CN102851109A CN201210356571XA CN201210356571A CN102851109A CN 102851109 A CN102851109 A CN 102851109A CN 201210356571X A CN201210356571X A CN 201210356571XA CN 201210356571 A CN201210356571 A CN 201210356571A CN 102851109 A CN102851109 A CN 102851109A
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Abstract
The invention provides a cooling liquid for a diamond cutting line to cut solar silicon chips, which comprises the following components by mass percent: 10 to 90 percent of water, 2 to 86 percent of polyethylene glycol, 1 to 25 percent of dispersing agent, 0.1 to 20 percent of chelate, 0.5 to 15 percent of metal corrosion inhibitor and 0.1 to 2 percent of defoamer. The cooling liquid can be matched with the diamond cutting line for cutting, has good lubricating and cooling effects, effectively reduces the line breaking rate, has a good dispersant effect on silicon powder and iron tramp produced during the cutting process, guarantees the surface performance of the silicon chips, is low in cost and is pollution-free and environmentally friendly.
Description
Technical field
The present invention relates to a kind of cooling fluid for diamond wire cutting solar silicon wafers.
Background technology
Along with the fast development of world economy, energy consumption is increasing, countries in the world all the demand new forms of energy application and popularize.Because the greenhouse gases effect that Carbon emission causes causes global warming and causes natural disaster, countries in the world are especially strong to the demand of the renewable energy source of cleaning.Since the global crisis that U.S.'s subprime crisis in 2007 causes spread and enlarges, for stimulating economic growth, each state had all passed through the measure that renewable energy source is used in more positive encouragement.U.S.'s Obama administration proposes to invest 1,500 hundred million dollars at coming 10 years and is used for clean energy; European Union's target setting accounts for renewable energy source at the year two thousand twenty and uses the ratio of the energy to bring up to 20%; Japan proposes to make the New Dwelling more than 70% that solar panel (about 70GW) is installed in the year two thousand thirty.Not enough for alleviating the photovoltaic domestic needs, on March 26th, 2009, China Ministry of Finance announces will promote to implement " solar roof project " demonstration project.The Ministry of Finance, house and town and country construction section unite clearly proposition in the appearance " about accelerating to advance the implementation guideline of solar photoelectric Application in Building ", implement " solar roof project ", photoelectricity Application in Building demonstration project is given the fund subsidy, encourages technical progress to put into effect a series of principal measures such as relevant financial support policy, the support on policy of strengthen construction field with scientific and technical innovation, encouragement local government.Present stage is actively pushed forward the photoelectricity architecture-integral demonstrations such as sun power roof, photovoltaic curtain wall in big and medium-sized cities preferably at economically developed, Industry Foundation; Actively be supported in rural area and the generating of remote districts development off-grid type, implement to send the electricity relevant regulations such as go to the countryside, indicated direction for especially the application of heliotechnics.Take photoelectricity architecture-integrals such as sun power roof, photovoltaic curtain walls as the breach, may allow in a short time people see and many benefits of applied solar energy also be conducive to from now on spread, excite the enthusiasm of capital of property investment field of solar energy.The new forms of energy policy of various countries perhaps will become next our after this one of the important policies of 15 years world developments that affect.Copenhagen Climate Conference in 2009 has waken, has strengthened the consciousness that people pay close attention to clean energy again up.Follow the application of new forms of energy and popularize, the rapid growth impetus of photovoltaic industry is further strengthened and is paid attention to.As photovoltaic industry cutting silicon single crystal, the indispensable high-end auxiliary material of polysilicon, cutting steel wire has thundering importance in the production chain of photovoltaic industry, so policy risk, the market risk are all less.
According to the EPIA prediction, under normal circumstances, the global solar installed capacity will rise to from 7.2GW in 2009 13.7GW in 2014, if consider the policy stimulus, then will reach 30GW in 2014.With regard to China, crystal silicon solar energy battery output in 2008 is 1.78GW, crystal silicon solar energy battery output was 3.5GW in 2009, pressed the average speed of growth 40%-50% measuring and calculating of sun power industry over past ten years, to about China crystal silicon solar batteries output 10GW in 2012.1MW approximately needs 10 tons of crystalline silicons in the world at present, and China since the cutting technique relative mistake some, 1MW needs about 12 tons crystalline silicon.One ton of crystalline silicon of every cutting needs the cutting steel wire of 700-800 kilogram approximately, calculates accordingly, and the domestic cutting steel wire that needs altogether was ten thousand tons of 8-9 by 2012.As photovoltaic industry cutting silicon single crystal, the indispensable high-end auxiliary material of polysilicon, cutting steel wire is second largest running stores in the solar silicon wafers production process, is only second to silicon materials.Cutting steel wire domestic market capacity was about 3,000,000,000 yuan in 2010, estimated that in the industry the compound growth of industry is more than 15%.Domestic needs is (to be converted to sales volume, by conservative price evaluation, to be about 4,000,000,000 yuans) about 40,000 tons now.
The thickness of silicon chip no matter, crystal silicon photovoltaic cell are made the commercial city quality of silicon chip have been proposed high requirement.Silicon chip can not have surface damage (hair line, the scroll saw marking), and pattern defective (crooked, concavo-convex, became uneven) will minimize, to extra back-end processing as the polishing etc. requirement also to drop to minimum.
For satisfying the market for the more low-cost and more requirement of high productivity, scroll saw of new generation must promote cutting speed in feet per minute, thereby improves the cutting load.Thinner line of cut and thinner silicon chip have all promoted productivity, and simultaneously, advanced technology controlling and process can be managed the line of cut pulling force and be kept the stability of line of cut with this.More the scroll saw system of high productivity can reduce board quantity under same silicon chip output.Therefore, manufacturers can significantly reduce the cost of equipment, operator and maintenance.
The consumption that reduces silicon chip has namely directly reduced every watt of cost of solar electric power.Silicon chip supplier wishes oneself to control the integration of slice process, and diamond wire need to be used in Crystalline Silicon PV Module production commercial city.
Silicon single crystal and polysilicon photovoltaic technology all need to use it.The special-purpose diamond wire of most of photovoltaics is that silicon chip supplier buys.Their general growing silicon ingot or silico briquette, the cutting process of silicon raw material is become silicon chip, final sales to photovoltaic cell manufacturers for the manufacture of battery.
Along with the concern of the mankind to living environment, there are the product of pollution and technique will be regarded as backward products and technique, will be eliminated or forbid.Aspect the cutting processing of superhard, crisp material, carry out the processing technology of line cutting because a large amount of pollutions is arranged by free abrasive material, and have inefficient problem; And diamond wire is compared other handicraft product very large advantage is arranged, and efficient is high, the life-span is long, is subject to the favor of industry, and carrying out the processing technology that line cuts by free abrasive material certainly will be replaced by diamond wire.In areas such as American-European wests, used the diamond wire line to carry out the line cutting processing on a large scale, begun at home progressively to enlarge, to estimate in 2-3, will all change, this will produce a huge market volume.
And the diamond wire cooling fluid is diamond wire matching used material in cutting process, just at present, diamond wire cooling fluid great majority directly use polyoxyethylene glycol (PEG), although have certain effect to a certain extent, also there are a lot of shortcomings in it: relatively more responsive to water; Disperse the effect of silica flour and iron powder bad; There is certain environmental pollution to exist; Expensive.
Domestic existing diamond wire cooling fluid mainly is divided into three kinds:
One kind of A is the cooling fluid of polyethylene glycol system, for example patent CN 102352278A is said, it is mainly take polyoxyethylene glycol as main, add a certain proportion of rust-preventive agent, emulsifying agent and defoamer, this cooling fluid advantage is that cooling performance is better, for impurity such as silica flours certain suspension and sequestering action is arranged, shortcoming is that cost is higher, and certain environmental pollution is arranged.
One kind of B is small molecular alcohol, ether, phenols combination cooling liquid, for example patent CN 102433190 A are said, it is mainly take propylene glycol as main body, the cooling fluid that forms by adding other ethers and the configuration of classification additive, the advantage of this cooling fluid is that the performance to silicon chip surface has some improvement, but it is high that its shortcoming is cost, and cooling performance is general, is not very desirable for the dissemination of the impurity such as silica flour.
One kind of C is water base cooling fluid, mainly be as main take water, by adding dispersion agent, sequestrant, tensio-active agent, defoamer, a kind of cooling fluid that viscosity modifier forms, mainly take japanese product as main, this cooling fluid cost is low on this cooling fluid market, environmental friendliness, but the problem that will solve is exactly how to disperse the impurity such as silica flour.Domestic also have indivedual companies that the similar water base product is arranged, but await on the performance further to improve.
Summary of the invention
The technical problem to be solved in the present invention is: overcome silica flour and the iron contamination dispersion effect undesirable deficiency of existing water base cooling fluid to producing in the cutting process, a kind of cooling fluid for diamond wire cutting solar silicon wafers is provided.
For solving the problems of the technologies described above the technical solution used in the present invention be: a kind of cooling fluid for diamond wire cutting solar silicon wafers, the cooling fluid that should be used for diamond wire cutting solar silicon wafers forms mass percent and is: water 10～90%, polyoxyethylene glycol 2～86%, dispersion agent 1～25%, inner complex 0.1～20%, metal corrosion inhibitor 0.5～15%, defoamer 0.1%～2%;
In cutting process, have a large amount of silica flours and produce, and occur with the impurity of some iron and silicon carbide, therefore, select suitable dispersion agent to disperse silica flour, prevent caking, will the surface quality of silicon chip be had a great impact.Described dispersion agent is for by one or more homopolymer that obtain for monomeric unit in vinylformic acid, methylpropanoic acid acid, ethylacrylic acid, olefin sulfonic acid, styrene sulfonic acid, maleic anhydride, alkyl propenyloxy group sulfonic acid or the acrylamido sulfonic acid or in the multipolymer one or more;
Because water base cooling fluid flows in the circulation line of board, have for a long time corrosion for the pipeline of stainless steel and produce, therefore must in cooling fluid, add corresponding sequestrant, suppress the generation of metallic corrosion.The preferred hydramine of described sequestrant, one or more in polyamino organic amine or the amino acid.
Described water is deionized water, and quality optimization is 20～80% of cooling fluid total amount.
Described polyoxyethylene glycol molecular-weight average is 200-10000, and quality optimization is 5～80% of cooling fluid total amount.
Described dispersion agent quality optimization is 3～15% of cooling fluid total amount.
Described metal corrosion inhibitor is preferably from phenols, such as phenol, 1, and 2-dihydroxyl phenol, pyrocatechol, Nickel thiolates, para hydroxybenzene phenol or pyrogallol; Carboxylic-acid is such as phenylformic acid, para-amino benzoic acid (PABA), phthalic acid (PA), gallic acid (GA), Whitfield's ointment or citric acid; Carboxylic acid esters is such as methyl p-aminobenzoate, Methyl Benzene-o-dicarboxylate or Tenox PG; Anhydrides is such as in diacetyl oxide or the caproic anhydride one or more.Described metal corrosion inhibitor quality optimization is 2～6% of cooling fluid total amount.
In cutting process, because cooling fluid has Bubble formation in circulating process, this bubble can cause bad impact to cutting, therefore should add defoamer, described defoamer is one or more in polymethyl siloxane, PES-4, poly-propyl-siloxane, poly-butyl siloxanes, polymethy ethylsiloxane and the polydimethylsiloxane.
The hydramine of sequestrant described in selecting better be one or more of thanomin, diethanolamine or trolamine, preferred trolamine; Described polyamino organic amine is better is in diethylenetriamine, pentamethyl-diethylenetriamine or the polyethylene polyamine one or more, preferred pentamethyl-diethylenetriamine; Described amino acid is better is in 2-Padil, 2-benzaminic acid, iminodiethanoic acid, nitrilotriacetic acid(NTA) or the ethylenediamine tetraacetic acid (EDTA) one or more, preferred iminodiethanoic acid; The better quality optimization of described sequestrant is 1～10% of cooling fluid total amount.
The invention has the beneficial effects as follows: the cutting that the cooling fluid for diamond wire cutting solar silicon wafers of the present invention can fine cooperation diamond wire, lubrication is effective, effectively reduces outage; Have good dissemination for the silica flour that produces in the cutting process and iron contamination, guaranteed the surface property of silicon chip; This cooling fluid cost is low, pollution-free, is a kind of environmental friendliness cooling fluid.
Embodiment
Embodiment:
Cooling fluid is to the dispersing property of silica flour with to the detection of Corrosion of Stainless Steel inhibition:
Use cooling fluid dissolving massfraction is 20% silica flour, after one week of sedimentation, again shakes up again, detects cooling fluid to dispersiveness and the redispersibility of silica flour.
Claims (10)
1. one kind is used for the cooling fluid that diamond wire cuts solar silicon wafers, it is characterized in that: the cooling fluid that should be used for diamond wire cutting solar silicon wafers forms mass percent and is: water 10～90%, polyoxyethylene glycol 2～86%, dispersion agent 1～25%, inner complex 0.1～20%, metal corrosion inhibitor 0.5～15%, defoamer 0.1%～2%;
Dispersion agent is for by one or more homopolymer that obtain for the monomeric unit polymerization in vinylformic acid, methylpropanoic acid acid, ethylacrylic acid, olefin sulfonic acid, styrene sulfonic acid, maleic anhydride, alkyl propenyloxy group sulfonic acid or the acrylamido sulfonic acid or in the multipolymer one or more; Sequestrant is one or more in hydramine, polyamino organic amine or the amino acid.
2. the cooling fluid for diamond wire cutting solar silicon wafers according to claim 1, it is characterized in that: described water is that deionized water, quality are 20～80% of cooling fluid total amount.
3. the cooling fluid for diamond wire cutting solar silicon wafers according to claim 1, it is characterized in that: described polyoxyethylene glycol molecular-weight average is 5～80% of 200-10000, quality cooling fluid total amount.
4. the cooling fluid for diamond wire cutting solar silicon wafers according to claim 1, it is characterized in that: described dispersion agent quality is 3～15% of cooling fluid total amount.
5. the cooling fluid for diamond wire cutting solar silicon wafers according to claim 1, it is characterized in that: described metal corrosion inhibitor is one or more in phenols, carboxylic-acid, carboxylic acid esters or the anhydrides, quality is 2～6% of cooling fluid total amount.
6. be used for according to claim 1 or 5 the cooling fluid of diamond wire cutting solar silicon wafers, it is characterized in that: described phenols comprises phenol, 1,2-dihydroxyl phenol, pyrocatechol, Nickel thiolates, para hydroxybenzene phenol or pyrogallol; Carboxylic-acid comprises phenylformic acid, para-amino benzoic acid (PABA), phthalic acid (PA), gallic acid (GA), Whitfield's ointment or citric acid; Carboxylic acid esters comprises methyl p-aminobenzoate, Methyl Benzene-o-dicarboxylate or Tenox PG; Anhydrides comprises diacetyl oxide or caproic anhydride.
7. the cooling fluid for diamond wire cutting solar silicon wafers according to claim 1, it is characterized in that: described defoamer is one or more in polymethyl siloxane, PES-4, poly-propyl-siloxane, poly-butyl siloxanes, polymethy ethylsiloxane or the polydimethylsiloxane.
8. the cooling fluid for diamond wire cutting solar silicon wafers according to claim 1, it is characterized in that: described sequestrant quality is 1～10% of cooling fluid total amount.
9. according to claim 1 or 8 described cooling fluids for diamond wire cutting solar silicon wafers, it is characterized in that: described hydramine is one or more of thanomin, diethanolamine or trolamine; Described polyamino organic amine is one or more in diethylenetriamine, pentamethyl-diethylenetriamine or the polyethylene polyamine; Described amino acid is one or more in 2-Padil, 2-benzaminic acid, iminodiethanoic acid, nitrilotriacetic acid(NTA) or the ethylenediamine tetraacetic acid (EDTA).
10. according to claim 1 or 8 described cooling fluids for diamond wire cutting solar silicon wafers, it is characterized in that: described hydramine is trolamine; Described polyamino organic amine is pentamethyl-diethylenetriamine; Described amino acid is iminodiethanoic acid.
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| CN201210356571.XA CN102851109B (en) | 2012-09-21 | 2012-09-21 | Cooling liquid for diamond cutting line to cut solar silicon chips |
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| CN201210356571.XA CN102851109B (en) | 2012-09-21 | 2012-09-21 | Cooling liquid for diamond cutting line to cut solar silicon chips |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103396875A (en) * | 2013-08-02 | 2013-11-20 | 镇江荣德新能源科技有限公司 | Cooling liquid for diamond-wire cutting equipment, and preparation method thereof |
| CN106318324A (en) * | 2015-07-09 | 2017-01-11 | 江苏太阳光伏科技有限公司 | Coolant for solder strips |
| CN108559609A (en) * | 2018-06-04 | 2018-09-21 | 保定良合新材料科技有限公司 | A kind of Buddha's warrior attendant wire cutting liquid for solar silicon wafers processing |
| CN109956517A (en) * | 2017-12-14 | 2019-07-02 | 丰田合成株式会社 | Ultraviolet light sterilizing unit and fluid sterilizing unit |
| CN110382659A (en) * | 2017-03-02 | 2019-10-25 | 艾克伯有限责任公司 | Cooling liquid composition in cooling liquid cooling system is carried out to the thermogenesis element of setting on a printed circuit |
| CN112297260A (en) * | 2019-07-29 | 2021-02-02 | 内蒙古中环光伏材料有限公司 | Method for controlling silicon powder concentration in solar silicon wafer cutting process |
| CN112342079A (en) * | 2020-11-11 | 2021-02-09 | 何虎林 | Water-based cutting fluid for diamond wire saw |
| CN112745808A (en) * | 2021-01-19 | 2021-05-04 | 广东石油化工学院 | Heat management system liquid and preparation method thereof |
| CN112961726A (en) * | 2021-03-16 | 2021-06-15 | 广东高景太阳能科技有限公司 | Cutting fluid for diamond wire cutting large-size silicon wafer and preparation process thereof |
| CN113930280A (en) * | 2021-11-02 | 2022-01-14 | 河北矽碳新材料科技有限公司 | Diamond wire cooling liquid and preparation method and application thereof |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103396875A (en) * | 2013-08-02 | 2013-11-20 | 镇江荣德新能源科技有限公司 | Cooling liquid for diamond-wire cutting equipment, and preparation method thereof |
| CN106318324A (en) * | 2015-07-09 | 2017-01-11 | 江苏太阳光伏科技有限公司 | Coolant for solder strips |
| CN110382659A (en) * | 2017-03-02 | 2019-10-25 | 艾克伯有限责任公司 | Cooling liquid composition in cooling liquid cooling system is carried out to the thermogenesis element of setting on a printed circuit |
| CN109956517A (en) * | 2017-12-14 | 2019-07-02 | 丰田合成株式会社 | Ultraviolet light sterilizing unit and fluid sterilizing unit |
| CN108559609A (en) * | 2018-06-04 | 2018-09-21 | 保定良合新材料科技有限公司 | A kind of Buddha's warrior attendant wire cutting liquid for solar silicon wafers processing |
| CN108559609B (en) * | 2018-06-04 | 2021-03-02 | 保定良合新材料科技有限公司 | Diamond wire cutting fluid for solar silicon wafer processing |
| CN112297260A (en) * | 2019-07-29 | 2021-02-02 | 内蒙古中环光伏材料有限公司 | Method for controlling silicon powder concentration in solar silicon wafer cutting process |
| CN112342079A (en) * | 2020-11-11 | 2021-02-09 | 何虎林 | Water-based cutting fluid for diamond wire saw |
| CN112745808A (en) * | 2021-01-19 | 2021-05-04 | 广东石油化工学院 | Heat management system liquid and preparation method thereof |
| CN112961726A (en) * | 2021-03-16 | 2021-06-15 | 广东高景太阳能科技有限公司 | Cutting fluid for diamond wire cutting large-size silicon wafer and preparation process thereof |
| CN113930280A (en) * | 2021-11-02 | 2022-01-14 | 河北矽碳新材料科技有限公司 | Diamond wire cooling liquid and preparation method and application thereof |
| CN113930280B (en) * | 2021-11-02 | 2022-08-02 | 河北矽碳新材料科技有限公司 | Diamond wire cooling liquid and preparation method and application thereof |
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