CN102047410B - 直接结合方法中的氮-等离子体表面处理 - Google Patents

直接结合方法中的氮-等离子体表面处理 Download PDF

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Publication number
CN102047410B
CN102047410B CN200980119383.1A CN200980119383A CN102047410B CN 102047410 B CN102047410 B CN 102047410B CN 200980119383 A CN200980119383 A CN 200980119383A CN 102047410 B CN102047410 B CN 102047410B
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China
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thin layer
silicon
plasma
nitrogen
surface treatment
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Expired - Fee Related
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Chinese (zh)
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CN102047410A (zh
Inventor
休伯特·莫里西奥
克里斯托夫·莫拉尔斯
弗朗索瓦·里乌托德
卡罗琳·文托萨
蒂里·切沃利奥
劳尔·利布拉尔索
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Formation Of Insulating Films (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Sampling And Sample Adjustment (AREA)
CN200980119383.1A 2008-05-26 2009-04-28 直接结合方法中的氮-等离子体表面处理 Expired - Fee Related CN102047410B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0802833 2008-05-26
FR0802833A FR2931585B1 (fr) 2008-05-26 2008-05-26 Traitement de surface par plasma d'azote dans un procede de collage direct
PCT/FR2009/000502 WO2009153422A1 (fr) 2008-05-26 2009-04-28 Traitement de surface par plasma d'azote dans un procédé de collage direct

Publications (2)

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CN102047410A CN102047410A (zh) 2011-05-04
CN102047410B true CN102047410B (zh) 2014-03-26

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CN200980119383.1A Expired - Fee Related CN102047410B (zh) 2008-05-26 2009-04-28 直接结合方法中的氮-等离子体表面处理

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Country Link
US (1) US8318586B2 (https=)
EP (1) EP2304787B1 (https=)
JP (1) JP5661612B2 (https=)
KR (1) KR101453135B1 (https=)
CN (1) CN102047410B (https=)
AT (1) ATE529891T1 (https=)
FR (1) FR2931585B1 (https=)
WO (1) WO2009153422A1 (https=)

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US9716088B1 (en) 2016-06-30 2017-07-25 International Business Machines Corporation 3D bonded semiconductor structure with an embedded capacitor
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US11742314B2 (en) 2020-03-31 2023-08-29 Adeia Semiconductor Bonding Technologies Inc. Reliable hybrid bonded apparatus
WO2022158563A1 (ja) * 2021-01-21 2022-07-28 ボンドテック株式会社 接合方法、接合装置および接合システム
US12550799B2 (en) 2021-03-31 2026-02-10 Adeia Semiconductor Bonding Technologies Inc. Direct bonding methods and structures
US11307233B1 (en) 2021-04-13 2022-04-19 Quantum Valley Ideas Laboratories Vapor cells having stacks of layers defining target three-dimensional volumes for internal cavities
US12604771B2 (en) 2021-10-28 2026-04-14 Adeia Semiconductor Bonding Technologies Inc. Direct bonding methods and structures
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CN120513517A (zh) 2022-12-31 2025-08-19 美商艾德亚半导体接合科技有限公司 嵌入式液体冷却
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US12191234B2 (en) 2023-05-17 2025-01-07 Adeia Semiconductor Bonding Technologies Inc. Integrated cooling assemblies for advanced device packaging and methods of manufacturing the same
US12191235B2 (en) 2023-05-17 2025-01-07 Adeia Semiconductor Bonding Technologies Inc. Integrated cooling assemblies including signal redistribution and methods of manufacturing the same
US12283490B1 (en) * 2023-12-21 2025-04-22 Adeia Semiconductor Bonding Technologies Inc. Integrated cooling assemblies for advanced device packaging and methods of manufacturing the same
US12610819B2 (en) 2023-12-21 2026-04-21 Adeia Semiconductor Bonding Technologies Inc. Integrated cooling assemblies for advanced device packaging and methods of manufacturing the same
US20250210585A1 (en) * 2023-12-22 2025-06-26 Adeia Semiconductor Bonding Technologies Inc. Direct bonding of semiconductor elements
US12368087B2 (en) 2023-12-26 2025-07-22 Adeia Semiconductor Bonding Technologies Inc. Embedded cooling systems for advanced device packaging and methods of manufacturing the same
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US12525506B2 (en) 2024-02-07 2026-01-13 Adeia Semiconductor Bonding Technologies Inc. Embedded cooling systems for advanced device packaging and methods of manufacturing the same
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US12176264B1 (en) 2024-03-29 2024-12-24 Adeia Semiconductor Bonding Technologies Inc. Manifold designs for embedded liquid cooling in a package
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Also Published As

Publication number Publication date
WO2009153422A1 (fr) 2009-12-23
KR101453135B1 (ko) 2014-10-27
EP2304787A1 (fr) 2011-04-06
EP2304787B1 (fr) 2011-10-19
US8318586B2 (en) 2012-11-27
FR2931585A1 (fr) 2009-11-27
ATE529891T1 (de) 2011-11-15
FR2931585B1 (fr) 2010-09-03
CN102047410A (zh) 2011-05-04
KR20110010740A (ko) 2011-02-07
JP5661612B2 (ja) 2015-01-28
WO2009153422A8 (fr) 2010-12-23
JP2011523784A (ja) 2011-08-18
US20110129986A1 (en) 2011-06-02

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