KR101453135B1 - 직접 접합 방법에서의 질소-플라즈마 표면 처리 - Google Patents

직접 접합 방법에서의 질소-플라즈마 표면 처리 Download PDF

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Publication number
KR101453135B1
KR101453135B1 KR1020107026487A KR20107026487A KR101453135B1 KR 101453135 B1 KR101453135 B1 KR 101453135B1 KR 1020107026487 A KR1020107026487 A KR 1020107026487A KR 20107026487 A KR20107026487 A KR 20107026487A KR 101453135 B1 KR101453135 B1 KR 101453135B1
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South Korea
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silicon
plasma
nitrogen
less
silicon oxide
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KR20110010740A (ko
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로레 리브라레소
우베르 모리소
크리스토쁘 모랄레
프랑수아 류또르
까롤린 뱅또사
티에리 슈볼로
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꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Formation Of Insulating Films (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Sampling And Sample Adjustment (AREA)
KR1020107026487A 2008-05-26 2009-04-28 직접 접합 방법에서의 질소-플라즈마 표면 처리 Expired - Fee Related KR101453135B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0802833 2008-05-26
FR0802833A FR2931585B1 (fr) 2008-05-26 2008-05-26 Traitement de surface par plasma d'azote dans un procede de collage direct
PCT/FR2009/000502 WO2009153422A1 (fr) 2008-05-26 2009-04-28 Traitement de surface par plasma d'azote dans un procédé de collage direct

Publications (2)

Publication Number Publication Date
KR20110010740A KR20110010740A (ko) 2011-02-07
KR101453135B1 true KR101453135B1 (ko) 2014-10-27

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Country Link
US (1) US8318586B2 (https=)
EP (1) EP2304787B1 (https=)
JP (1) JP5661612B2 (https=)
KR (1) KR101453135B1 (https=)
CN (1) CN102047410B (https=)
AT (1) ATE529891T1 (https=)
FR (1) FR2931585B1 (https=)
WO (1) WO2009153422A1 (https=)

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WO2014052476A2 (en) 2012-09-25 2014-04-03 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On... Methods for wafer bonding, and for nucleating bonding nanophases
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KR102287811B1 (ko) 2014-10-31 2021-08-09 삼성전자주식회사 2개 표면을 결합시키는 방법 및 그에 의하여 제조된 구조체, 및 상기 구조체를 포함하는 미세유동 장치
TWI741988B (zh) * 2015-07-31 2021-10-11 日商新力股份有限公司 堆疊式透鏡結構及其製造方法，以及電子裝置
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US9716088B1 (en) 2016-06-30 2017-07-25 International Business Machines Corporation 3D bonded semiconductor structure with an embedded capacitor
US9620479B1 (en) 2016-06-30 2017-04-11 International Business Machines Corporation 3D bonded semiconductor structure with an embedded resistor
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US10859981B1 (en) 2019-10-21 2020-12-08 Quantum Valley Ideas Laboratories Vapor cells having one or more optical windows bonded to a dielectric body
US11742314B2 (en) 2020-03-31 2023-08-29 Adeia Semiconductor Bonding Technologies Inc. Reliable hybrid bonded apparatus
WO2022158563A1 (ja) * 2021-01-21 2022-07-28 ボンドテック株式会社 接合方法、接合装置および接合システム
US12550799B2 (en) 2021-03-31 2026-02-10 Adeia Semiconductor Bonding Technologies Inc. Direct bonding methods and structures
US11307233B1 (en) 2021-04-13 2022-04-19 Quantum Valley Ideas Laboratories Vapor cells having stacks of layers defining target three-dimensional volumes for internal cavities
US12604771B2 (en) 2021-10-28 2026-04-14 Adeia Semiconductor Bonding Technologies Inc. Direct bonding methods and structures
FR3131434B1 (fr) * 2021-12-29 2023-12-15 Commissariat Energie Atomique Procédé d’activation d’une couche exposée
KR20230105177A (ko) 2022-01-03 2023-07-11 삼성전자주식회사 플라즈마 처리 장치, 이를 포함하는 기판 본딩 시스템 및 이를 이용한 기판 본딩 방법
US12191233B2 (en) 2022-07-28 2025-01-07 Adeia Semiconductor Bonding Technologies Inc. Embedded cooling systems and methods of manufacturing embedded cooling systems
US12261099B2 (en) 2022-12-23 2025-03-25 Adeia Semiconductor Bonding Technologies Inc. Embedded cooling systems with coolant channel for device packaging
CN120457540A (zh) 2022-12-29 2025-08-08 美商艾德亚半导体接合科技有限公司 用于先进设备封装体的嵌入式冷却组件及其制造方法
CN120513517A (zh) 2022-12-31 2025-08-19 美商艾德亚半导体接合科技有限公司 嵌入式液体冷却
CN116022731B (zh) * 2023-02-17 2023-07-07 西南应用磁学研究所(中国电子科技集团公司第九研究所) 一种基于wlp工艺的mems磁通门传感器的制作方法
US20240321855A1 (en) * 2023-03-24 2024-09-26 Taiwan Semiconductor Manufacturing Company, Ltd. Bonding techniques for stacked transistor structures
US12176263B2 (en) 2023-03-31 2024-12-24 Adeia Semiconductor Bonding Technologies Inc. Integrated cooling assembly including coolant channel on the backside semiconductor device
US12191234B2 (en) 2023-05-17 2025-01-07 Adeia Semiconductor Bonding Technologies Inc. Integrated cooling assemblies for advanced device packaging and methods of manufacturing the same
US12191235B2 (en) 2023-05-17 2025-01-07 Adeia Semiconductor Bonding Technologies Inc. Integrated cooling assemblies including signal redistribution and methods of manufacturing the same
US12283490B1 (en) * 2023-12-21 2025-04-22 Adeia Semiconductor Bonding Technologies Inc. Integrated cooling assemblies for advanced device packaging and methods of manufacturing the same
US12610819B2 (en) 2023-12-21 2026-04-21 Adeia Semiconductor Bonding Technologies Inc. Integrated cooling assemblies for advanced device packaging and methods of manufacturing the same
US20250210585A1 (en) * 2023-12-22 2025-06-26 Adeia Semiconductor Bonding Technologies Inc. Direct bonding of semiconductor elements
US12368087B2 (en) 2023-12-26 2025-07-22 Adeia Semiconductor Bonding Technologies Inc. Embedded cooling systems for advanced device packaging and methods of manufacturing the same
US12322677B1 (en) 2024-02-07 2025-06-03 Adeia Semiconductor Bonding Technologies Inc. Fluid channel geometry optimizations to improve cooling efficiency
US12525506B2 (en) 2024-02-07 2026-01-13 Adeia Semiconductor Bonding Technologies Inc. Embedded cooling systems for advanced device packaging and methods of manufacturing the same
US12336141B1 (en) 2024-03-29 2025-06-17 Adeia Semiconductor Bonding Technologies Inc. Cold plate cavity designs for improved thermal performance
US12532432B2 (en) 2024-03-29 2026-01-20 Adeia Semiconductor Bonding Technologies Inc. Hotspot mitigation in fluid cooling
US12176264B1 (en) 2024-03-29 2024-12-24 Adeia Semiconductor Bonding Technologies Inc. Manifold designs for embedded liquid cooling in a package
US12500138B2 (en) 2024-04-17 2025-12-16 Adeia Semiconductor Bonding Technologies Inc. Cooling channel shape with substantially constant cross sectional area
US12266545B1 (en) 2024-05-24 2025-04-01 Adeia Semiconductor Bonding Technologies Inc. Structures and methods for integrated cold plate in XPUs and memory
US12412808B1 (en) 2024-12-20 2025-09-09 Adeia Semiconductor Bonding Technologies Inc. Cold plate and manifold integration for high reliability
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KR20090037332A (ko) * 2007-10-10 2009-04-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법

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Publication number Publication date
WO2009153422A1 (fr) 2009-12-23
EP2304787A1 (fr) 2011-04-06
EP2304787B1 (fr) 2011-10-19
US8318586B2 (en) 2012-11-27
FR2931585A1 (fr) 2009-11-27
ATE529891T1 (de) 2011-11-15
FR2931585B1 (fr) 2010-09-03
CN102047410A (zh) 2011-05-04
KR20110010740A (ko) 2011-02-07
JP5661612B2 (ja) 2015-01-28
WO2009153422A8 (fr) 2010-12-23
CN102047410B (zh) 2014-03-26
JP2011523784A (ja) 2011-08-18
US20110129986A1 (en) 2011-06-02

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