CN102044560B - 超高频硅锗异质结双极晶体管 - Google Patents
超高频硅锗异质结双极晶体管 Download PDFInfo
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CN102044560B true CN102044560B (zh) | 2013-03-13 |
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102956477B (zh) * | 2011-08-22 | 2015-02-04 | 上海华虹宏力半导体制造有限公司 | 锗硅hbt发射极光刻对准精度优化的方法 |
CN102412283B (zh) * | 2011-10-18 | 2013-07-24 | 上海华虹Nec电子有限公司 | 锗硅hbt器件及其制造方法 |
CN103094102B (zh) * | 2011-11-04 | 2015-08-19 | 上海华虹宏力半导体制造有限公司 | 去除双极型晶体管工艺中发射极多晶硅刻蚀残留的方法 |
CN102437180B (zh) * | 2011-11-21 | 2013-09-11 | 上海华虹Nec电子有限公司 | 超高压锗硅hbt器件及其制造方法 |
CN103137471B (zh) * | 2011-11-23 | 2015-08-19 | 上海华虹宏力半导体制造有限公司 | SiGe HBT工艺中的自隔离型寄生PNP器件的制造方法 |
CN103050520B (zh) * | 2012-01-09 | 2015-06-03 | 上海华虹宏力半导体制造有限公司 | 一种SiGe HBT器件及其制造方法 |
CN103000677B (zh) * | 2012-12-12 | 2015-05-27 | 清华大学 | 带有隔离氧化层的侧向双极晶体管及其制备方法 |
CN103035687A (zh) * | 2012-12-20 | 2013-04-10 | 清华大学 | 外基区下具有低电阻屏蔽层的双极晶体管及其制备方法 |
WO2020257974A1 (zh) * | 2019-06-24 | 2020-12-30 | 华为技术有限公司 | 异质结双极型晶体管及其制备方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |