CN102034708B - 沟槽型dmos晶体管的制作方法 - Google Patents
沟槽型dmos晶体管的制作方法 Download PDFInfo
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- CN102034708B CN102034708B CN2009101750767A CN200910175076A CN102034708B CN 102034708 B CN102034708 B CN 102034708B CN 2009101750767 A CN2009101750767 A CN 2009101750767A CN 200910175076 A CN200910175076 A CN 200910175076A CN 102034708 B CN102034708 B CN 102034708B
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- barrier layer
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 229910044991 metal oxide Inorganic materials 0.000 title abstract 2
- 150000004706 metal oxides Chemical class 0.000 title abstract 2
- 230000004888 barrier function Effects 0.000 claims abstract description 40
- 238000009792 diffusion process Methods 0.000 claims abstract description 38
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 25
- 150000002500 ions Chemical class 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 20
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 69
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 229920005591 polysilicon Polymers 0.000 claims description 20
- 230000003647 oxidation Effects 0.000 claims description 17
- 238000007254 oxidation reaction Methods 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229940090044 injection Drugs 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- -1 boron ion Chemical class 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 239000012071 phase Substances 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000007792 gaseous phase Substances 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004380 ashing Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- VLXBWPOEOIIREY-UHFFFAOYSA-N dimethyl diselenide Natural products C[Se][Se]C VLXBWPOEOIIREY-UHFFFAOYSA-N 0.000 description 1
- WQOXQRCZOLPYPM-UHFFFAOYSA-N dimethyl disulfide Chemical compound CSSC WQOXQRCZOLPYPM-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66719—With a step of forming an insulating sidewall spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (13)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009101750767A CN102034708B (zh) | 2009-09-27 | 2009-09-27 | 沟槽型dmos晶体管的制作方法 |
US13/394,679 US20120178230A1 (en) | 2009-09-27 | 2010-09-26 | Method for fabricating trench dmos transistor |
JP2012530119A JP2013505589A (ja) | 2009-09-27 | 2010-09-26 | トレンチdmosトランジスタの製造方法 |
KR1020127007293A KR20120053511A (ko) | 2009-09-27 | 2010-09-26 | 트렌치형 디모스 트랜지스터 제조 방법 |
PCT/CN2010/077318 WO2011035727A1 (en) | 2009-09-27 | 2010-09-26 | Method for fabricating trench dmos transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009101750767A CN102034708B (zh) | 2009-09-27 | 2009-09-27 | 沟槽型dmos晶体管的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102034708A CN102034708A (zh) | 2011-04-27 |
CN102034708B true CN102034708B (zh) | 2012-07-04 |
Family
ID=43795412
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101750767A Active CN102034708B (zh) | 2009-09-27 | 2009-09-27 | 沟槽型dmos晶体管的制作方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20120178230A1 (zh) |
JP (1) | JP2013505589A (zh) |
KR (1) | KR20120053511A (zh) |
CN (1) | CN102034708B (zh) |
WO (1) | WO2011035727A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101270643B1 (ko) * | 2012-07-20 | 2013-06-03 | 서울대학교산학협력단 | 터널링 전계 효과 트랜지스터 및 그 제조 방법 |
CN104425351A (zh) * | 2013-09-11 | 2015-03-18 | 中国科学院微电子研究所 | 沟槽形成方法和半导体器件制造方法 |
KR102335328B1 (ko) * | 2016-12-08 | 2021-12-03 | 현대자동차 주식회사 | 반도체 소자의 제조 방법 |
US10553492B2 (en) | 2018-04-30 | 2020-02-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Selective NFET/PFET recess of source/drain regions |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1148274A (zh) * | 1995-10-16 | 1997-04-23 | 三星电子株式会社 | 沟槽型dmos晶体管及其制造方法 |
CN1353863A (zh) * | 1999-04-22 | 2002-06-12 | 理查德·K·威廉斯 | 具有降低接通电阻的超级自对准的沟-栅双扩散金属氧化物半导体器件 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5567634A (en) * | 1995-05-01 | 1996-10-22 | National Semiconductor Corporation | Method of fabricating self-aligned contact trench DMOS transistors |
US6049108A (en) * | 1995-06-02 | 2000-04-11 | Siliconix Incorporated | Trench-gated MOSFET with bidirectional voltage clamping |
JP2000021970A (ja) * | 1998-07-02 | 2000-01-21 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2000223705A (ja) * | 1999-01-29 | 2000-08-11 | Nissan Motor Co Ltd | 半導体装置 |
JP3337012B2 (ja) * | 1999-09-08 | 2002-10-21 | 日本電気株式会社 | 半導体装置およびその製造方法 |
DE10239861A1 (de) * | 2002-08-29 | 2004-03-18 | Infineon Technologies Ag | Transistoreinrichtung |
JP4567969B2 (ja) * | 2003-10-28 | 2010-10-27 | 東部エレクトロニクス株式会社 | 半導体素子のトランジスタ製造方法 |
US20060113588A1 (en) * | 2004-11-29 | 2006-06-01 | Sillicon-Based Technology Corp. | Self-aligned trench-type DMOS transistor structure and its manufacturing methods |
US7285822B2 (en) * | 2005-02-11 | 2007-10-23 | Alpha & Omega Semiconductor, Inc. | Power MOS device |
US8338887B2 (en) * | 2005-07-06 | 2012-12-25 | Infineon Technologies Ag | Buried gate transistor |
US20070075362A1 (en) * | 2005-09-30 | 2007-04-05 | Ching-Yuan Wu | Self-aligned schottky-barrier clamped trench DMOS transistor structure and its manufacturing methods |
JP5065589B2 (ja) * | 2005-11-29 | 2012-11-07 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
US20080206944A1 (en) * | 2007-02-23 | 2008-08-28 | Pan-Jit International Inc. | Method for fabricating trench DMOS transistors and schottky elements |
JP5410055B2 (ja) * | 2007-09-27 | 2014-02-05 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
US8878292B2 (en) * | 2008-03-02 | 2014-11-04 | Alpha And Omega Semiconductor Incorporated | Self-aligned slotted accumulation-mode field effect transistor (AccuFET) structure and method |
US7867852B2 (en) * | 2008-08-08 | 2011-01-11 | Alpha And Omega Semiconductor Incorporated | Super-self-aligned trench-dmos structure and method |
-
2009
- 2009-09-27 CN CN2009101750767A patent/CN102034708B/zh active Active
-
2010
- 2010-09-26 KR KR1020127007293A patent/KR20120053511A/ko active Search and Examination
- 2010-09-26 JP JP2012530119A patent/JP2013505589A/ja active Pending
- 2010-09-26 US US13/394,679 patent/US20120178230A1/en not_active Abandoned
- 2010-09-26 WO PCT/CN2010/077318 patent/WO2011035727A1/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1148274A (zh) * | 1995-10-16 | 1997-04-23 | 三星电子株式会社 | 沟槽型dmos晶体管及其制造方法 |
CN1353863A (zh) * | 1999-04-22 | 2002-06-12 | 理查德·K·威廉斯 | 具有降低接通电阻的超级自对准的沟-栅双扩散金属氧化物半导体器件 |
Also Published As
Publication number | Publication date |
---|---|
CN102034708A (zh) | 2011-04-27 |
US20120178230A1 (en) | 2012-07-12 |
JP2013505589A (ja) | 2013-02-14 |
KR20120053511A (ko) | 2012-05-25 |
WO2011035727A1 (en) | 2011-03-31 |
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Denomination of invention: The Manufacturing Method of Grooved DMOS Transistor Effective date of registration: 20231007 Granted publication date: 20120704 Pledgee: Bank of China Limited Wuxi Branch Pledgor: CSMC TECHNOLOGIES FAB2 Co.,Ltd. Registration number: Y2023980059915 |
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