CN102021653B - 一种用高密度料块生长碳化硅单晶的方法 - Google Patents
一种用高密度料块生长碳化硅单晶的方法 Download PDFInfo
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- CN102021653B CN102021653B CN 201010615255 CN201010615255A CN102021653B CN 102021653 B CN102021653 B CN 102021653B CN 201010615255 CN201010615255 CN 201010615255 CN 201010615255 A CN201010615255 A CN 201010615255A CN 102021653 B CN102021653 B CN 102021653B
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- silicon carbide
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- 239000000463 material Substances 0.000 title claims abstract description 46
- 239000013078 crystal Substances 0.000 title claims abstract description 32
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000002994 raw material Substances 0.000 claims abstract description 11
- 238000002360 preparation method Methods 0.000 claims abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 16
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 229910003978 SiClx Inorganic materials 0.000 claims description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000007770 graphite material Substances 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 239000011863 silicon-based powder Substances 0.000 claims description 2
- 239000000843 powder Substances 0.000 abstract description 12
- 239000012535 impurity Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000012546 transfer Methods 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 239000007792 gaseous phase Substances 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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CN102021653A CN102021653A (zh) | 2011-04-20 |
CN102021653B true CN102021653B (zh) | 2013-06-12 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3922762A4 (en) * | 2020-04-14 | 2022-01-05 | Meishan Boya Advanced Materials Co., Ltd. | METHODS AND DEVICES FOR CRYSTAL GROWING |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105543965A (zh) * | 2016-02-02 | 2016-05-04 | 北京华进创威电子有限公司 | 一种碳化硅单晶生长用坩埚结构 |
CN106480503B (zh) * | 2016-12-09 | 2018-11-20 | 河北同光晶体有限公司 | 一种颗粒状碳化硅单晶的生长方法 |
CN108624963A (zh) * | 2018-05-16 | 2018-10-09 | 福建北电新材料科技有限公司 | 一种用于pvt法生长的碳化硅晶体的原料烧结工艺 |
JP7242978B2 (ja) | 2018-11-26 | 2023-03-22 | 株式会社レゾナック | SiC単結晶インゴットの製造方法 |
CN111962152A (zh) * | 2020-09-14 | 2020-11-20 | 哈尔滨科友半导体产业装备与技术研究院有限公司 | 一种降低晶体缺陷的碳化硅单晶制备方法 |
CN113622029B (zh) * | 2021-08-12 | 2022-11-29 | 山东天岳先进科技股份有限公司 | 具有多晶块的坩埚组件及其制备方法和由其制得的碳化硅单晶 |
Citations (4)
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CN1367275A (zh) * | 2001-01-20 | 2002-09-04 | 上海德波赛康科研有限公司 | 块状碳化硅单晶生长的制备方法 |
CN1544715A (zh) * | 2003-11-14 | 2004-11-10 | 中国科学院物理研究所 | 物理气相传输生长碳化硅单晶的方法及其装置 |
CN101701358A (zh) * | 2009-11-25 | 2010-05-05 | 中国科学院上海硅酸盐研究所 | 高品质大碳化硅单晶的制备方法及用其制备的碳化硅单晶 |
CN101812723A (zh) * | 2010-04-20 | 2010-08-25 | 中国科学院上海硅酸盐研究所 | 基于物理气相传输技术生长碳化硅体单晶方法及其装置 |
Family Cites Families (2)
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JP4225296B2 (ja) * | 2005-06-20 | 2009-02-18 | トヨタ自動車株式会社 | 炭化珪素単結晶の製造方法 |
JP5250321B2 (ja) * | 2008-07-04 | 2013-07-31 | 昭和電工株式会社 | 炭化珪素単結晶成長用種結晶の製造方法並びに炭化珪素単結晶の製造方法 |
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Patent Citations (4)
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CN1367275A (zh) * | 2001-01-20 | 2002-09-04 | 上海德波赛康科研有限公司 | 块状碳化硅单晶生长的制备方法 |
CN1544715A (zh) * | 2003-11-14 | 2004-11-10 | 中国科学院物理研究所 | 物理气相传输生长碳化硅单晶的方法及其装置 |
CN101701358A (zh) * | 2009-11-25 | 2010-05-05 | 中国科学院上海硅酸盐研究所 | 高品质大碳化硅单晶的制备方法及用其制备的碳化硅单晶 |
CN101812723A (zh) * | 2010-04-20 | 2010-08-25 | 中国科学院上海硅酸盐研究所 | 基于物理气相传输技术生长碳化硅体单晶方法及其装置 |
Non-Patent Citations (2)
Title |
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姜守振等.沿[1100]方向升华法生长6H-SiC单晶.《人工晶体学报》.2007,第36卷(第1期),14-17. * |
陈之战等.原料对碳化硅单晶生长的影响.《无机材料学报》.2003,第18卷(第4期),737-743. * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3922762A4 (en) * | 2020-04-14 | 2022-01-05 | Meishan Boya Advanced Materials Co., Ltd. | METHODS AND DEVICES FOR CRYSTAL GROWING |
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