CN102017135A - 带有在多个接触平面中的元器件的基板电路模块 - Google Patents

带有在多个接触平面中的元器件的基板电路模块 Download PDF

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CN102017135A
CN102017135A CN2009801150770A CN200980115077A CN102017135A CN 102017135 A CN102017135 A CN 102017135A CN 2009801150770 A CN2009801150770 A CN 2009801150770A CN 200980115077 A CN200980115077 A CN 200980115077A CN 102017135 A CN102017135 A CN 102017135A
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components
parts
wiring layer
supporting layer
contact
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CN102017135B (zh
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P·基米希
Q-D·恩古延
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Robert Bosch GmbH
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Robert Bosch GmbH
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Abstract

本发明涉及一种带有多个固定在基板(10)上的元器件的电路模块。所述基板(10)包括一个由金属制成的带有第一个表面的支撑层(20)，其中在第一个表面上设置了一个直接与支撑层(20)相邻的第一个绝缘层(30)。此外，所述基板(10)还包括一个直接与第一个绝缘层(30)相邻的第一个布线层(40)，所述第一个布线层能导电并且设置在第一个绝缘层(30)上。所述基板(10)包括第一个接触平面，该接触平面沿着第一个表面延伸，其中在第一个接触平面中的至少一个所述元器件与支撑层(20)直接电连接。本发明还包括一种用于依据本发明的电路模块的制造方法，在该方法中，将布线层(40)的部分表面和位于其下面的绝缘层的部分表面去除，并且将一个元器件设置在这样设置的孔中。

Description

带有在多个接触平面中的元器件的基板电路模块
技术领域
本发明涉及一种电路模块，在此模块中，表面固定的电子元器件固定在一个基板上。一种如此的固定结构由表面安装元器件(surface-mounted technology，SMT)的领域已知。
背景技术
文献DE 100 38 092 A1描述了一种电气组件，在该组件中，将一个集成电路片与一个散热体连接，其中一个IMS(绝缘金属基板式)基板提供了导体线路，所述集成电路片与该IMS-基板相连。一个构成基板支撑体的金属底板虽然用于热连接以及机械稳定，但是通过一个绝缘层与集成电路片隔开。因此该文献示出了一种连接结构，该连接结构仅以电路板为基础，该电路板通过一个绝缘层和所述基板的金属支撑板隔开。以同样的方法，US 6,441,520B1示出了一种功率开关电路，在该功率开关电路中同样使用了一个IMS基板(绝缘金属基板)。在IMS基板上设置的固定单元包括与基板的上面的金属层相连的元器件。但是所述构成导体线路的金属层通过一个连续的绝缘层与支撑层隔开；所述IMS基板的金属支撑层因此被一个绝缘层连续地覆盖。在这篇文献中，所述IMS基板的金属支撑层只用于机械稳定和热传导。两篇文献都示出了一种带有金属层的基板，该金属层在基板的整个接触面上连续地支撑着一个绝缘层。
IMS基板(IMS-insulated metal substrate，绝缘金属基板)用作功率组件的电路板，其中金属支撑层不仅设计用来散热而且也设计用来提高机械稳定性。但对于复杂的电路，例如对于三相整流桥产生很长的导体线路，因为只有最上面的一层，即设置在绝缘层上的提供了导体线路的布线层，用来连接元器件。由于流过的电流在连接层中设置的导体线路必须具有一个最小宽度，因此产生了很高的面积需求和同时产生了很长的布线路径。
发明内容
因此本发明的任务是，设计一种避免上述缺点的连接技术。
依据本发明的电路模块以及依据本发明的制造方法是能够以改善的电磁兼容性、降低的无功功率和减少的空间需求来布置元器件。本发明借助于通常的、生产成本低的且能用广泛已知的加工工艺进行加工的基板，实现了更加紧凑的结构。通过本发明在使用通常基板的情况下可提供另一个接触平面，该接触平面明显地简化了通过导体线路的布线。复杂性的降低导致无功功率的减少和布线面积的节约。此外本发明改善了依据本发明连接的功率元器件的散热。所述支撑层用作机械/电气接触平面以及用作散热器/散热装置。此外，节省了除导体线路之外要设置的压焊件以及其它连接件。相对于现有技术，可以以更高的自由度和更高的灵活性设置依据本发明的电路模块的元器件以及相应的接头。此外本发明使得能够在同一个基板上将强电应用和控制应用相结合。换句话说，带有控制或者逻辑元器件的功率元器件可以设置在同一个基板上。这还提高了集成密度。此外本发明还使得能够通过低温烧结连接制造元器件和基板之间的接触件，其中这种连接提高了温度变化抵抗能力。
与根据现有技术的基于基板的连接相比，依据本发明，所述的功率基板的支撑层用于元器件之间的电连接，该功率基板由金属制成并且用来散热和提高机械稳定性。直到现在，电气元器件通过连续的绝缘层与支撑层完全隔开，但依据本发明在直接覆盖所述支撑层的绝缘层中设有一个孔。通过该孔使所述支撑层的第一个表面露出，并提供了用来容纳与支撑层连接的元器件和/或接触元件的空间。为了容纳元器件，优选在绝缘层中的孔处，在位于该绝缘层上面的布线层中也设置一个孔，所述布线层通常是铜箔。孔在布线层中的孔优选与绝缘层中的孔对准或者说设置成至少与绝缘层在一侧对齐，其中根据本发明的一种优选实施方式，所述布线层中的孔提供了一个表面，所述绝缘层中的孔适合装配到该表面中，其中在布线层中的较大的孔与绝缘层中的孔之间形成一个框架。此外，拥有相同尺寸的孔可以相互对应，并且上下重叠对准地布置。
就这点而言，作为孔可以理解为绝缘层或者布线层的一个对于绝缘层或者布线层的整个厚度来说的完全空白。所述支撑层与绝缘层相邻的表面，即所述第一个表面，因此构成了将所有与之相连的元器件相互电连接的第一个接触平面。优选为每个在第一个接触平面中与支撑层相连的元器件，设置一个相应的孔。所述设置在绝缘层上的布线层按已知的方法构成了第二个接触平面，其中布线层优选是一个金属层，该金属层例如可以借助于蚀刻被结构化，用来形成导体线路。依据本发明的电路模块可以包括其它的接触平面，该接触平面由分别设置在绝缘层上的其它布线层构成。由此实现了绝缘层和布线层的堆叠布置，这些绝缘层和布线层沿垂直于支撑层平面的方向交替设置。与布线层的数量与接触层的数量相符的现有技术相比，依据本发明将基板的支撑层用作电导体，这提供了一个附加的接触平面。该附加的接触平面的电绝缘可以通过已知的绝缘元件来实现(云母片或者绝缘箔、绝缘轴衬，等等)。
根据第一种优选实施方式，使用一个带有一个金属支撑层、一个绝缘层和一个布线层的三层IMS基板。根据第二种实施方式，使用一个带有一个金属支撑层和相互交替的绝缘层以及布线层，其中一个所述绝缘层将一个所述布线层与所述支撑层隔开。此外，两种实施方式可以包括阻焊膜，该阻焊膜作为涂层设置在所述布线层或者最上面的布线层上。此外阻焊膜还可以设置在另外的表面上，例如设置在在其上设有布线层空白的绝缘层上，或者设置在通过孔露出的支撑层上。
根据在布线层中和绝缘层中的孔的深度并且取决于位于其中的元器件的高度，孔也可以为直接设置在支撑层上的元器件提供侧向保护。依据本发明将在元器件和支撑层或者布线层之间的直接接触称为直接电连接，其中直接接触优选包括焊接(例如通过焊膏)、粘接(在使用导电粘合剂的条件下)或者低温烧结焊接。对此，涉及的元器件优选包括在平面中延伸的接触面，其中，涉及的支撑层的接触表面或者涉及的布线层的接触表面优选基本上在同一个平面中延伸。元器件优选是电气或者电子SMD元器件因此优选包括允许与一个位于元器件下面的层(即支撑层或者布线层)直接接触的接触面。原则上可以使用与用于在第二个或其它的接触平面中(即在元器件与所述布线层或者所述多个布线层中的一层之间)连接相同的连接技术，用来在第一个接触平面中连接元器件，即，将元器件与支撑层连接。
所述支撑层优选是一个有镀层的或者无镀层的金属片，该金属片例如由铜、铝、黄铜、钢或者它们的组合制成。通常，所述支撑层构成一个金属基底，依据本发明，该金属基底除了用来散热和机械稳定之外还用来进行元器件的电接触。
优选地，所述绝缘层是一种绝缘材料，例如一种绝缘的塑料或者绝缘的聚合物、环氧树脂、纤维强化聚合物、压层纸材料、陶瓷材料或者它们的组合，例如是一个多层式材料层。优选地，尽管所述材料具有电绝缘的特性，但仍能导热，以便能根据功率使用时的热量产生情况将热量传递到支撑层。优选地，将支撑层本身在与第一个表面相反的第二个表面上和一个散热器相连，如接下来所描述的。
根据一种优选实施方式，布线层包括一种有镀层的或者无镀层的金属层、铜层、单面镀锌的铜层、金属片或者它们的组合。如已经说明的那样，优选使布线层结构化，用来提供导体线路。所述布线层直接设置优选是粘贴在位于它下面的绝缘层上，其中所述绝缘层也优选粘贴在位于它下面的层上，即一个布线层或者所述支撑层上。通过粘接，两个相互粘合的层直接相邻。
此外，依据本发明的电路模块优选还包括元器件的背对支撑层的表面与所述布线层中的一层之间的压焊连接件或焊桥，或者包括由所述布线层或者多个所述布线层形成的接触面或焊盘，用来在不同导体线路之间进行电连接。
支撑层的底面，即背对绝缘层的第二个表面，优选具有一个散热器或者用于散热器的一个连接件(即接触面)。对此，优选给所述第二个表面提供一个导热的表面接触件或者使用一个散热体形式的散热器，该散热体提供了一个平的连接面，该连接面与第二个表面建立导热接触，而且该散热体还提供与该第二个表面成角度的冷却指。在第二个表面和散热器之间优选设置了用来传递热量的层，例如一层云母、导热膏或者类似物。这一层优选是电绝缘的。散热器还可以通过(电绝缘的)连接元件与基板，例如与支撑层相连接。
为了将散热体安装在支撑层的第二个表面上，例如使用电绝缘的带有或者没有电绝缘小球的导热膏作为隔片。作为替代方案，可以使用一种导热的、电绝缘的箔片。箔片的厚度或者导热膏层更确切地说小球层的厚度优选与施加在支撑层上的电压相匹配。在此需特别注意击穿效应。
除了上面列举的用于电接触的连接方案之外，另外可以使用一个冲压格栅，该冲压格栅至少提供一个可以与基板的支撑层或者与一个布线层相连接的片段。因此所述冲压格栅包含相关联的片段，其中，这些片段在固定前例如经过一个环形的框架彼此连接。为了将片段与基板固定，优选将片段压紧在基板上，例如通过冲头或者冲模来实现，用来提供电的以及机械的接触。在片段和基板如此相连之后，通过冲压、激光切割、剪切或者通过其他的分离加工过程将所有的片段从框架(中筋连杆)中分离。所述片段不是必然地必须所有都相互分离，而是通过相应相关联地将片段从框架中分离，可以一部分相互保持连接。为了将片段压在基板上而设计的工具可以包含平的结构，因为需将片段固定在其上的底座即基板是平的。必要时将工具的平面设置在不同的高度，例如当要将一个片段压紧在一个布线层上以及将一个片段压紧在更深的支撑层上时。包含片段的冲压格栅的施加，可以在传递成型工艺的过程内实施，以便已经具有元器件的基板通过传递成型工艺得到对有效的电子器件的保护。
冲压格栅可以设计成由金属片制成，例如有镀层或者无镀层的钢片、铜片、黄铜片或者类似的。
在电路模块中设置的元器件优选构成发动机控制装置，更确切地说发动机控制装置的功率输出级，或者构成DC-DC转换器，更确切地说DC-DC转换器的功率输出级。所述电路模块的元器件优选构成一个三相系统，例如用于三相交流电系统的一个全波整流器或者一个用于带有三个MOSFET对的全波控制装置的相应的三相输出级。可以在支撑层和布线层之间提供电源电势，其中布线层、支撑层和位于其间的绝缘层可以构成一个通常三层式基板。基板可以装备一个或者多个全波的三相控制装置。此外，电路模块的元器件可以作为带有四个MOSFET的桥电路使用，其中要么发动机输出电压，要么输入电压施加在桥电路彼此相对的连接处之间。可以通过支撑层，至少一个布线层并且必要时借助于压焊连接件来设置在桥电路中的各个连接。
本发明的构思此外由一种依据本发明的方法来实现，在此方法中，提供一个带有支撑层、一个位于其上面的绝缘层和一个位于绝缘层上面的布线层的基板；并且孔对所述绝缘层和布线层进行加工，以便去除布线层和绝缘层的部分面积来提供所述孔。在位于上面的层(例如一个或者多个布线层)中的孔优选与从绝缘层去除的部分表面相对应。为了提供孔而去除相应的部分表面的步骤例如包括：对所有位于支撑层上面的绝缘层和布线层进行激光加工或者铣加工。接着，依据本发明设置至少一个元器件，即一个电气或者电子元器件，其中将元器件放置在孔中并且固定在那里。通过在元器件的表面接触件和支撑层相应露出的部分表面之间建立直接电连接，将元器件固定在支撑层上。通过电连接同时建立机械连接和导热连接。所述部分表面是第一个表面的一部分，第一个接触平面在该第一个表面中延伸。与依据现有技术的基板结构相比，所述第一个接触平面提供了一个附加的电连接平面。
能与SMD(表面贴装器件)共存的电气元器件的结构形式适合作为依据本发明嵌入所述孔中并且与支撑层相连的或者设置在一个用于电接触的布线层上的元器件，所述结构形式例如为功率输出级、功率元件、MOSFET、IGBT、二极管、分流电阻、电容器特别是陶瓷电容器、SMD感应线圈、电气连接元件如表面安装的插头或插座以及类似的。高功率元件特别适用，该高功率元件的热量(尤其)由所述绝缘层通过与支撑层相连或者直接通过支撑层散出。除了支撑层之外其它的散热器也适用，例如以热传递的方式设置在电气元器件的背对支撑层的一面上的散热体。所述设置在元器件上的散热体，可以是与设置在支撑层上的散热体相同，或者与之不同。例如由金属、石墨或者陶瓷制成且具有用于将热量释放到周围环境中的相应展开形状的散热体适合作为用于固定在元器件上或者支撑层上的散热体。如同设置在支撑层上的散热体一样，设置在元器件上的散热体也可以通过带有或者没有不能传导的小球的绝缘导热膏作为隔片，或者通过一个绝缘的导热箔片电绝缘地固定。
附图说明
本发明的实施例在附图中示出并且在接下来的描述中进行详细的介绍。
附图中：
图1示出一个依据本发明的装配有元器件的电路模块的剖面图。
具体实施方式
图1示出了一个带有基板10的电路模块，该基板10提供一个由金属制成的支撑层20、一个电绝缘的绝缘层30和一个导电的布线层40，通过结构化提供导体线路和/或焊盘或者说电接触面(未示出)。所述支撑层20是连续的，相反地，位于它上面的绝缘层30具有依据本发明的第一个孔50a，在该孔50a中支撑层20的第一个表面被露出，而且一个元器件60通过接触元件70a与支撑层20建立电接触。另一个孔50b同样提供了支撑层20的第一个表面的被露出的接触面，其中在孔50b中将一个片段80压在支撑层20上。该片段80曾经在制造过程中是一个冲压格栅而且在制造时被从冲压格栅的剩余部分，特别是从一个冲压框架中分离。所述布线层40同样具有中断处，其中这些中断处用来结构化并且由此用来形成在布线层中的导体线路和接触焊盘。
与支撑层20连接的元器件60设置在第一个接触平面中，而第二个元器件62与由布线层40构成的第二个接触平面连接。对此，元器件62如元器件60一样也具有接触面64a、b，这些接触面与布线层40的两个不同的接触焊盘或者导体线路接触。与元器件62相比，元器件60具有一个连续的接触面70a，以致于与元器件62相比只实现了一处接触过渡，但为了使能够良好地传输热量，通过连续的面和相对大的面积在元器件60和支撑层20之间提供阻力很小的热量传递。在图1所示的接触面64a、b、70a不是终止于相应元器件的外周，而在一个未示出的例子中接触面终止于元器件底面即朝向基板的元器件表面的棱边。因此接触面70a与支撑层20一起构成第一个接触平面，接触元件64a、b与布线层40一起构形成第二个接触平面，其中上面的接触面66a、b、c和压焊丝68a、b一起提供了第三个接触平面。原则上可以在两个元器件之间设置压焊连接件，如同例如通过接触面66a、b和压焊线68a所示。此外也可以在元器件的一个接触面和第二个接触平面(布线层40)之间设置压焊连接件，如在图1中例如通过接触面66c、压焊丝68b和布线层40的接触焊盘42所示。通过将由(软)金属制成的压焊丝压紧在接触面上形成压焊连接件，即例如通过将铝或者金线压紧在相应的接触面上或者压紧在布线层40的接触焊盘上。另一种没有示出的可能的压焊连接件是在元器件的上接触面和支撑层20之间的连接件，所述元器件的上接触面设置在元器件的背对基板的一面。对此，在绝缘层30中以及在布线层40中设置一个依据本发明的孔，为了在那里使支撑层20的第一个表面露出，而且为了例如通过将压焊丝压在支撑层20上提供与支撑层20的电连接。原则上除了上面描述的通过与元器件接触面的压焊连接件来连接元器件之外，也可以通过压焊连接件来设置与支撑层20或者与布线层40的连接。当例如要接触布线层40的一个接触焊盘或支撑层20时，为了使强电流的传输成为可能，使用优选采用更粗的压焊丝直径以及多根压焊丝的压焊连接件。例如可以在图1中片段80与支撑层20接触的位置上设置这样的连接，或者也可以在图1中另一片段82与由布线层40形成的接触焊盘相接触的位置设置这样的连接。布线层40(或者多个布线层)的接触焊盘可以通过一个或者多根压焊丝与布线层40的另一个接触焊盘或者与支撑层20(在一个露出的位置)连接。
此外，在图1中示出了一个散热体90，该散热体通过一个传递热量的连接件，例如一个电绝缘的传递热量的箔片或者绝缘的导热膏92与支撑层20的与第一个表面相反的第二个表面连接。所述支撑层20的第二个表面在基板10的底面并且由此在支撑层20的底面延伸，与之相反地，第一个表面在支撑层20的朝向绝缘层30的一面上延伸。
原则上在图1中所示的尺寸不是按正确比例，而是为了更好地展示部分被强烈放大。特别地，支撑层20的厚度优选大于绝缘层30的厚度而且大于布线层40的厚度。各个层的厚度是根据所期望的支撑层20的刚度、绝缘层30的耐压强度和在布线层40中的电流加载而定。与元器件60和62相比，散热体90被强烈缩小地示出而且应只是象征性地示出散热的合适位置。优选地，散热体通过第二个表面的大部分与支撑层20连接，特别在与元器件(特别是直接设置在支撑层20上的元器件)的接触面相对的位置上。固定在基板10上的元器件，在图1中例如通过附图标记60和62所示，可以是相同大小或者不同大小，可以在朝向支撑层20的一面上具有不同大小或者相同大小的接触面而且可以产生尤其以不同的程度产生热量。优选地，在工作时释放大量热量的那些元器件与支撑层20连接，例如MOSFET输出级晶体管或者IGBT输出级晶体管或者功率整流器，与之相反地，释放很少热量的元器件如电容器或者线圈优先固定在布线层40中的一层上或者所述布线层40上。此外，释放大量热量的元器件，为了改善热量辐射，可以在背对支撑层20的一面上具有一个散热体，例如对于元器件60在设置接触面66b和c的位置上，其中散热体接头伸进到接触面66b和c的位置。元器件的整个底面优选作为接触层使用，以便通过元器件的底面的外棱边形成接触面的边界。
当使用高功率MOSFET或者IGBT作为元器件60时，接触面66b和c优选不是相同大小，而是构成阳极、阴极、发射极或者集电极接头的接触面与其它接触面相比明显扩大。较小的接触面在这种情况下相当于控制接头，即基极接头或者栅极接头。与之相应的，在控制接头和布线层40之间的压焊连接件采用相对较细的压焊丝和数目很少的压焊丝来实施，与之相对地，较大的表面在压焊连接时优选通过较粗的压焊丝连接，其中也优选使用数目较大的压焊丝。因此，在连接高功率接头(例如阳极、阴极、集电极或者发射极接头)时，可以使用数目较大的压焊丝，例如多于两根，例如四根，这些压焊丝比用于连接控制接头的压焊丝具有更粗的压焊丝直径。为了连接高功率接头，代替具有圆形的(或者方形的)横截面的压焊丝，也可以使用具有呈长形延伸的横截面的压焊丝或者说金属片，这样的压焊丝或者说金属片的截面由于很宽的形状相当于大量更粗的压焊丝，或者比多根压焊丝的总横截面更大。
原则上为了形成依据本发明的基板10，可以从位于支撑层20上面的层中铣出孔或者用其他的方法去除，例如通过激光。根据另一种示例性实施方式，在位于支撑层20上面的层与支撑层20连接(粘接/压紧)之前并且在彼此连接之前给位于支撑层20上面的层配备穿过整个层厚的孔，例如通过冲压、切割或者类似方法。该例子可应用于这样的电路模块，在这些电路模块中，所述一个或多个布线层40和所述一个或多个绝缘层30在设置所有的孔之后也相关联，例如对于孔的外边缘相当于去除的表面的布局就是这种情况，其中在孔的边缘内部没有保留材料。所述布线层40可以通过光刻和蚀刻进行结构化。
总的来说，依据本发明设有至少部分被布置并固定在孔中的无源元件或电元件，以便在那里直接与支撑层20电连接、机械连接和导热连接。除了所列举的元器件，也可以孔将用于电接触的接触元件至少部分地布置在孔中。因此依据本发明，具有电功能的组成部分应理解为元器件。电功能可以很简单，例如为支撑层20提供插塞式接头或者焊接头，或者可以很复杂，例如强电的接通，如提供MOSFET、可控硅整流器、TRIAC或者IGBT那样。

Claims (10)

1.用来连接固定在基板(10)上的元器件(60、62)的电路模块，其特征在于，所述基板(10)包括：
一个由金属制成的带有第一个表面的支撑层(20)，其中在第一层表面上设置了一个与所述支撑层(20)直接相邻的第一个绝缘层(30)，和一个直接与所述第一个绝缘层(30)相邻的第一个布线层(40)，该布线层能导电并且设置在所述第一个绝缘层上，
其中，所述基板(10)包括第一个接触平面，该接触平面沿着所述第一个表面延伸；而且在所述绝缘层(30)和所述布线层中设有至少一个孔(50a、50b)，该孔能容纳至少一个元器件(60；62)或者接触元件，并且所述支撑层(20)能将在第一个接触平面中的至少一个所述元器件(60；62)与所述支撑层(20)直接电连接。
2.按权利要求1的电路模块，其特征在于，所述电路模块还包括第二个绝缘层和第二个布线层，其中，在所述第一个布线层(40)上设置第二个绝缘层(30)，该第二个绝缘层直接与所述第一个布线层(40)相邻，并且所述第二个布线层(40)设置在所述第二个绝缘层上，该第二个布线层直接与所述第二个绝缘层(30)相邻。
3.按权利要求1或2的电路模块，其特征在于，所述至少一个孔(50a、b)延伸穿过所述电路模块的所有绝缘层(30)和布线层(40)，其中所述电路模块包括所述元器件(60、62)而且至少一个所述元器件(60；62)设置在所述至少一个孔(50a、50b)中并且在所述孔(50a、b)中与所述支撑层(20)直接电连接。
4.按上述权利要求任一项的电路模块，其特征在于，所述元器件包括在平面中延伸的多个接触面(70a；64a、b)，而且至少一个所述元器件通过所述接触面(70)固定在所述支撑层(20)上，其中所述接触面(70a)提供相应的元器件(60；62)和所述支撑层(20)之间的直接电连接，或者所述接触面(64a、b)在第二个接触平面中提供所述相应的元器件(60；62)和所述第一个布线层(40)之间的直接电连接，该第二个接触平面沿着所述第一个布线层(40)延伸。
5.按上述权利要求任一项的电路模块，其特征在于，所述支撑层(20)由一种材料制成，该材料包括：铜、铝、钢，或者它们的组合；所述绝缘层(30)由一种材料制成，该材料包括：绝缘材料、绝缘聚合物，环氧树脂，纤维强化聚合物、层压纸材料、陶瓷材料、导热材料或者它们的组合；而且所述布线层(40)包括：铜层、单面镀锌铜层、金属片，或者它们的组合，其中所述基板(10)包括一种IMS基板(10)或者另一种多层基板(10)。
6.按上述权利要求任一项的电路模块，其特征在于，所述元器件(60、62)是电气或者电子元器件而且包括：至少一个MOSFET、至少一个IGBT、至少一个分流器、至少一个电容器、至少一个陶瓷电容器、至少一个感应线圈、至少一个未封装的组成元件、至少一个已封装的组成元件和/或至少一个受冷却的组成元件，该受冷却的组成元件通过焊接、粘接、低温烧结连接和一个相应的散热体相连，其中，至少一个所述元器件作为功率元器件(60；62)，至少一个所述元器件是表面安装元器件(60；62)，至少一个所述元器件直接通过焊接、粘接，或者低温烧结连接与所述支撑层(20)或与直接设置在元器件(60；62)下面的布线层(40)电连接，或者至少一个所述元器件直接通过该元器件的一个背对基板(10)的表面借助于压焊连接件(68a、b)或者焊桥与所述支撑层(20)或者所述布线层(40)电连接。
7.按上述权利要求任一项的电路模块，其特征在于，所述支撑层(20)包括与所述第一个表面相反的第二个表面，而且所述电路模块包括一个与所述第二个表面以热传递的方式连接的散热器(90)，或者一个导热的表面接触件(92)，该表面接触件(92)构成所述第二个表面的至少一个部分。
8.按上述权利要求任一项的电路模块，其特征在于，所述电路模块还包括至少一个片段(80，82)，该片段由有镀层或者无镀层的钢片、铜片、黄铜片或者金属片制成的而且与所述支撑层(20)或者所述布线层(40)的一个背对所述支撑层(20)的表面通过压装接触而相连。
9.按上述权利要求任一项的电路模块，其特征在于，所述元器件(60、62)包括至少两个MOSFET对，其中每个MOSFET对包括两个通过串联连接件连接的功率MOSFET，每对的所述功率MOSFET分配给不同的电压半波，而且所述串联连接件包括一个抽头，该抽头构成了对称的电压供给装置的一个电极。
10.基于基板的电路的制造方法，包括：
提供一个带有由金属制成的支撑层(20)的基板(10)，在所述支撑层上直接设置一个电绝缘的绝缘层(30)，其中所述基板(10)的导电的布线层直接设置在绝缘层(30)上；
孔通过去除所述布线层(40)的部分表面和所述绝缘层(30)的部分表面，提供一个孔(50a、b)，所述孔在所述绝缘层(30)和所述布线层(40)的整个厚度上延伸；
在所述孔(50a、b)中布置至少一个电气或者电子元器件(60、62)；以及
将所述元器件(60、62)通过元器件的表面接触件(70a)与所述支撑层(20)已通过去除露出的部分表面直接电连接而固定在所述支撑层(20)上。
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WO2009132922A3 (de) 2009-12-30
CN102017135B (zh) 2014-08-06

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