CN107924892A - 电路载体、包括电路载体的功率电子安排 - Google Patents
电路载体、包括电路载体的功率电子安排 Download PDFInfo
- Publication number
- CN107924892A CN107924892A CN201680048039.8A CN201680048039A CN107924892A CN 107924892 A CN107924892 A CN 107924892A CN 201680048039 A CN201680048039 A CN 201680048039A CN 107924892 A CN107924892 A CN 107924892A
- Authority
- CN
- China
- Prior art keywords
- copper
- layers
- cooling body
- circuit carrier
- power component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/02—Coating starting from inorganic powder by application of pressure only
- C23C24/04—Impact or kinetic deposition of particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/321—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer with at least one metal alloy layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
本发明涉及一种用于保持至少一个电功率部件(BE)的电路载体(ST),该电路载体包括:冷却体(KK),用于保持和冷却该功率部件(BE),该冷却体具有表面(OF1);铜层(KS),用于使该冷却体(KK)机械连接到至少一个铜板(KP)上,其中,该铜层(KS)由铜或铜合金构成,并且通过冷气动力喷涂或通过烧结被施加到该冷却体(KK)的该表面(OF1)上;至少一个铜板(KP),用于使该功率部件(BE)机械地且电气地连接到该铜层(KS)上,其中,该铜板(KP)由铜或铜合金构成,并且被直接地安排在该铜层(KS)的背向该冷却体(KK)的表面(OF2)上,并且以平面的、机械的和导电的方式连接到该铜层(KS)上。
Description
技术领域:
本发明涉及一种用于保持至少一个电功率部件的电路载体,并且涉及一种包括前述电路载体的功率电子安排。
现有技术:
由于功率损耗较高并因此相关联的热量放出,所以功率部件通常布置在具有良好热导率的陶瓷电路载体(DCB)上。在陶瓷电路载体上形成电导体轨道,经由电导体轨道,功率部件彼此电连接并且与外部电气部件电连接。然而,经由陶瓷电路载体的散热效率不足,因此不能充分确保防止功率部件过热。陶瓷电路载体是昂贵的。而且,在一些应用领域中,例如像在汽车行业中,特别是在混合动力电动车辆/电动车辆领域中,需要更好的散热。
因此,本发明的目的是为功率部件提供高效且有成本效益的散热的可能性。
发明内容:
此目的是通过独立权利要求的主题来实现的。有利配置是从属权利要求的主题。
根据本发明的第一方面,提供了一种用于保持至少一个功率部件的电路载体。
电路载体包括具有表面的冷却体,所述冷却体被实施用于保持和冷却功率部件。电路载体进一步包括铜层,该铜层由铜或铜合金构成,并且被实施用于使冷却体机械连接到至少一个铜板上。在这种情况下,将铜层冷气喷涂或烧结在在冷却体的表面上。电路载体还包括至少一个铜板,该铜板同样由铜或铜合金构成,并且被实施用于使功率部件机械地且导电地连接到铜层上。在这种情况下,将铜板直接安排在铜层的背向冷却体的表面上,并且平面地、机械地且导电地连接到铜层上。
在这种情况下,功率部件可以是无源或有源电气或电子部件,例如像功率电容器或功率半导体开关。功率部件也可以是用于传输电流强度大于100安培的电流的电导体。
冷却体用作散热器,并且吸收在运行期间在功率部件上产生的废热。而且,冷却体用作功率部件和/或到达功率部件的导体轨道的载体,并且为功率部件和/或导体轨道提供机械支撑。冷却体因而取代了否则对于保持功率部件和导体轨道是必不可少的昂贵的陶瓷电路载体。因此降低了电路载体的成本。
铜层用作用于从/向功率部件传输电流的导体轨道。为此目的,铜层具有根据功率电子安排的预定电路布局而结构化的路线。而且,铜层用作用于将来自功率部件的废热传递到冷却体的高效的传热元件。铜层在冷却体表面上采用冷气喷涂或烧结工艺成型。
在本申请中,“层”是指平面地(特别是以平面方式)延伸并由相应材料组成的覆盖物,所述覆盖物具有的厚度为最大1毫米,特别是最大0.5毫米,尤其是最大0.2毫米,例如最大0.1毫米。由此,铜层是由层厚度小于1毫米的铜或铜合金构成的平面延伸的覆盖物,该覆盖物是通过冷气喷涂或烧结而制成的。
铜板是由铜或铜合金构成的、例如从由铜或铜合金构成的薄金属片冲压的或以某种其他方式切出的薄板。铜板尤其不是以冷气体喷涂或烧结方法或其他类似的涂覆方法制造或者在冷却体的上述表面上成型的铜层。铜板使得能够进行钎焊连接和焊接连接。作为焊接配对件,铜板可以很容易地被焊接到电导体上,尤其是通过激光焊接或使用超声波发生器(Sonotroden)进行焊接。
“平面(机械和/或电气)连接”是指经由延伸的接触区的(机械和/或电气)连接,该接触区基本上在有待电气接触的功率部件的电端子的整个电接触区上延伸并且由此提供从功率部件经由铜板和铜层到达冷却体的最大的可能的传热面积。由此“平面连接”能够实现从功率部件到冷却体的高效散热。
“直接安排”是指功率部件在铜板上的安排,该安排仅经由直接连接层形成、而不具有另外的中间层或其他中间元件,所述另外的中间层或其他中间元件并未被主要实施用于产生功率部件与铜板的直接的机械和物理连接。因此,功率部件仅经由连接层平面地、机械地且导电地直接连接到铜板上。
由铜或铜合金组成的铜层和铜板具有非常高的热导率,并且由此能够使功率部件高效散热。
此外,铜层使得能够实现铜板和/或功率部件与冷却体的成本有效的机械连接。借助于使铜层冷气喷涂或烧结在冷却体的表面上,铜层具有高度延展性,并且可以补偿冷却体与铜板和/或功率部件之间的差异热膨胀。因此铜层确保铜板并因此还确保功率部件仍然牢固地粘附在冷却体上,尽管由于差异热膨胀而存在机械应力。
因此提供了用于功率部件的高效且成本有效的散热。
优选地,铜层具有的厚度是至少45微米,特别是至少50微米,尤其是至少100微米。
优选地将铜板钎焊在铜层的表面上,并且用作将铜层连接到至少一个功率部件的连接区。由于铜层和铜板是由相同的或类似的铜基材料构成的,所以它们能够以简单的方式彼此钎焊。铜板的连接区使得能够实现针对功率部件的高电流端子的稳定的电气和机械连接。
铜板优选地具有的材料厚度为至少0.9毫米,特别是至少1毫米,尤其是至少2毫米。
优选地,电路载体进一步包括绝缘层,该绝缘层被布置在冷却体的表面与铜层之间并且将铜层机械连接到冷却体上并且同时使铜层与冷却体电绝缘。在这种情况下,绝缘层由电绝缘的且导热的材料(特别是陶瓷)形成。
优选地,将绝缘层冷气喷涂或烧结在冷却体的表面上。
绝缘层具有层厚度,该层厚度对于以有效方式使铜层与(可能导电的)冷却体电绝缘是足够厚,并且对于能够将来自功率部件的废热高效地传递到冷却体是足够薄。
根据本发明的另一个方面,提供了一种功率电子安排。该功率电子安排包括至少一个功率部件和至少一个以上所述的电路载体。在这种情况下,功率部件被安排在电路载体的铜板的背向冷却体的表面上,并且被平面地、机械地且导电地连接到铜板上。
以上所述的电路载体的有利配置,在其适用于以上提及的功率电子安排的情况下,还应该被认为是功率电子安排的有利配置。
附图说明:
以下将参照附图更详细地解释本发明的示例性实施例。在本案中,唯一的的图附1图以以示示意意性性截面截图面示图示示出示了出根了据根本据发本明发的明一的个一实个施例实的施功例率的电功子率安电排子L安A。排LA。
图中所展示的功率电子安排LA例如是用于混合动力电动车辆/电动车辆的电力驱动器的逆变器的一部分或逆变器的输出级的一部分。
功率电子安排LA包括电路载体ST以及安装在电路载体ST上的功率半导体开关(功率部件)BE。
电路载体ST包括由铝构成并以压铸方法制造的冷却体KK。冷却体KK具有平面的表面OF1,绝缘层IS被安排在该表面上。在这种情况下,绝缘层IS由电绝缘的导热陶瓷构成,并且在冷气喷涂过程中被涂覆到冷却体KK的表面OF1上。绝缘层IS使功率半导体开关BE与冷却体KK电绝缘,同时将来自功率半导体开关BE的废热传递至冷却体KK。
在绝缘层IS的背向冷却体KK的表面OF2上,电路载体ST具有铜层KS,该铜层由铜合金构成并且在另一个冷气喷涂过程中被涂覆在表面OF2上。铜层KS用于使铜板KP(将在下面进行描述)机械地且电气地连接到冷却体KK上。
在铜层KS的背向冷却体KK的表面OF3上,电路载体ST具有两个铜板KP,这两个铜板被平面地、机械地且导电地钎焊到铜层KS上。
功率半导体开关BE被安排在两个铜板KP之一的背向冷却体KK的表面OF4上。功率半导体开关BE在一个表面上具有平面地形成的电端子EA1,该电端子例如通过钎焊而经由钎焊连接部LV平面地、机械地且导电地连接到铜板KP上。
接合线BD被安排在另一个铜板KP的同样背向冷却体KK的表面OF5上,所述接合线经由钎焊连接部LV机械地且导电地连接到铜板KP上。接合线BD进一步机械地且导电地钎焊到功率半导体开关BE的另一个电端子EA2上。
此外,电导体EL或其接触端子被安排在另外的铜板KP的表面OF5上,并且经由焊接连接部SV(例如,使用超声波发生器进行焊接)平面地、机械地且导电地连接到铜板KP上。
此外,密封层DS被安排在铜层KS和两个铜板KP的表面OF3、OF4、OF5上,由此铜层KS和两个铜板KP的没有被相应的覆盖层或电路部件覆盖的密封层暴露区以介质密封的方式被覆盖并且受到保护以免受环境影响,例如像潮湿。密封层DS例如由被模制在OF3、OF4、OF5表面上和周围的电绝缘的且导热的模制化合物制成。
Claims (7)
1.一种用于保持至少一个电功率部件(BE)的电路载体(ST),该电路载体包括:
-冷却体(KK),用于保持和冷却该功率部件(BE),所述冷却体具有表面(OF1);
-铜层(KS),用于使该冷却体(KK)机械连接到至少一个铜板(KP)上,其中,该铜层(KS)由铜或铜合金构成,并且被冷气喷涂到或烧结到该冷却体(KK)的该表面(OF1)上;
-至少一个铜板(KP),用于使该功率部件(BE)机械地且电气地连接到该铜层(KS)上,其中,该铜板(KP)由铜或铜合金构成,并且被直接安排在该铜层(KS)的背向该冷却体(KK)的表面(OF3)上,并且平面地、机械地且导电地连接到该铜层(KS)上。
2.如权利要求1所述的电路载体(ST),其中,该铜层(KS)具有的厚度是至少45微米,特别是至少50微米,尤其是至少100微米。
3.如权利要求1或2所述的电路载体(ST),其中,该铜板(KP)被钎焊在该铜层(KS)的该表面(OF3)上,并且用于使该铜层电气地且机械地连接到至少一个功率部件(BE)上。
4.如以上权利要求中任一项所述的电路载体(ST),其中,该铜板(KP)具有的厚度是至少0.9毫米,特别是至少1毫米,尤其是至少2毫米。
5.如以上权利要求中任一项所述的电路载体(ST),进一步包括绝缘层(IS),该绝缘层被安排在该冷却体(KK)的该表面(OF1)与该铜层(KS)之间,并且使该冷却体(KK)机械连接到该铜层(KS)上并且使该冷却体与该铜层电绝缘。
6.如权利要求5所述的电路载体(ST),其中,该绝缘层(IS)被冷气喷涂或烧结在该冷却体(KK)的该表面(OF1)上。
7.一种功率电子安排(LA),包括:
-至少一个电功率部件(BE);
-如以上权利要求中任一项所述的至少一个电路载体(ST),其中,该功率部件(BE)被安排在该铜板(KP)的背向该冷却体(KK)的表面(OF4)上,并且被平面地、机械地且导电地连接到该铜板(KP)上。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102015216047.5A DE102015216047A1 (de) | 2015-08-21 | 2015-08-21 | Schaltungsträger, Leistungselektronikanordnung mit einem Schaltungsträger |
DE102015216047.5 | 2015-08-21 | ||
PCT/EP2016/068859 WO2017032581A1 (de) | 2015-08-21 | 2016-08-08 | Schaltungsträger, leistungselektronikanordnung mit einem schaltungsträger |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107924892A true CN107924892A (zh) | 2018-04-17 |
CN107924892B CN107924892B (zh) | 2021-03-23 |
Family
ID=56683940
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680048039.8A Active CN107924892B (zh) | 2015-08-21 | 2016-08-08 | 电路载体、包括电路载体的功率电子结构 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11276623B2 (zh) |
EP (1) | EP3338302B1 (zh) |
CN (1) | CN107924892B (zh) |
DE (1) | DE102015216047A1 (zh) |
WO (1) | WO2017032581A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113039870A (zh) * | 2018-11-15 | 2021-06-25 | 纬湃科技有限责任公司 | 电路载体、(电力)电子组件和电驱动装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102020205979A1 (de) | 2020-05-12 | 2021-11-18 | Robert Bosch Gesellschaft mit beschränkter Haftung | Leistungsmodul mit einer Wärmesenke |
EP4084058A1 (de) * | 2021-04-27 | 2022-11-02 | Siemens Aktiengesellschaft | Elektronik-baugruppe mit schaltungsträger, halbleiterchip und kühlkörper |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06283639A (ja) * | 1993-03-25 | 1994-10-07 | Sanyo Electric Co Ltd | 混成集積回路 |
JP2012222327A (ja) * | 2011-04-14 | 2012-11-12 | Aisin Aw Co Ltd | 半導体装置及びその製造方法 |
DE102011076774A1 (de) * | 2011-05-31 | 2012-12-06 | Continental Automotive Gmbh | Baugruppe mit einem Träger und einem Kühlkörper |
US20130105980A1 (en) * | 2011-10-27 | 2013-05-02 | Hitachi, Ltd. | Sinterable bonding material using copper nanoparticles, process for producing same, and method of bonding electronic component |
CN103703560A (zh) * | 2011-08-04 | 2014-04-02 | 三菱电机株式会社 | 半导体装置及其制造方法 |
US20140346659A1 (en) * | 2012-03-28 | 2014-11-27 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4586823B2 (ja) * | 2007-06-21 | 2010-11-24 | トヨタ自動車株式会社 | 成膜方法、伝熱部材、パワーモジュール、車両用インバータ、及び車両 |
JP2009038162A (ja) * | 2007-08-01 | 2009-02-19 | Sumitomo Electric Ind Ltd | 放熱部品、その製造方法及びパワーモジュール |
JP5565147B2 (ja) * | 2010-06-30 | 2014-08-06 | 株式会社デンソー | 半導体モジュールの製造方法 |
KR101222831B1 (ko) * | 2011-09-16 | 2013-01-15 | 삼성전기주식회사 | 전력 모듈 패키지 |
JP5656907B2 (ja) * | 2012-04-11 | 2015-01-21 | 三菱電機株式会社 | パワーモジュール |
JP5187465B1 (ja) * | 2012-08-08 | 2013-04-24 | 千住金属工業株式会社 | 高温鉛フリーはんだ合金 |
US9615442B2 (en) * | 2012-08-31 | 2017-04-04 | Mitsubishi Materials Corporation | Power module substrate and power module |
DE102013110815B3 (de) * | 2013-09-30 | 2014-10-30 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitereinrichtung und Verfahren zur Herstellung einer Leistungshalbleitereinrichtung |
JP6202195B2 (ja) * | 2014-04-14 | 2017-09-27 | 富士電機株式会社 | 半導体装置 |
DE102014214784A1 (de) * | 2014-07-28 | 2016-02-11 | Continental Automotive Gmbh | Schaltungsträger, elektronische Baugruppe, Verfahren zum Herstellen eines Schaltungsträgers |
DE102015210587B4 (de) * | 2015-06-10 | 2020-10-29 | Infineon Technologies Ag | Halbleitermodul, halbleitermodulanordnung und verfahren zum betrieb eines halbleitermoduls |
ITUB20153344A1 (it) * | 2015-09-02 | 2017-03-02 | St Microelectronics Srl | Modulo di potenza elettronico con migliorata dissipazione termica e relativo metodo di fabbricazione |
-
2015
- 2015-08-21 DE DE102015216047.5A patent/DE102015216047A1/de not_active Ceased
-
2016
- 2016-08-08 EP EP16750791.2A patent/EP3338302B1/de active Active
- 2016-08-08 CN CN201680048039.8A patent/CN107924892B/zh active Active
- 2016-08-08 WO PCT/EP2016/068859 patent/WO2017032581A1/de unknown
-
2018
- 2018-02-18 US US15/898,596 patent/US11276623B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06283639A (ja) * | 1993-03-25 | 1994-10-07 | Sanyo Electric Co Ltd | 混成集積回路 |
JP2012222327A (ja) * | 2011-04-14 | 2012-11-12 | Aisin Aw Co Ltd | 半導体装置及びその製造方法 |
DE102011076774A1 (de) * | 2011-05-31 | 2012-12-06 | Continental Automotive Gmbh | Baugruppe mit einem Träger und einem Kühlkörper |
CN103703560A (zh) * | 2011-08-04 | 2014-04-02 | 三菱电机株式会社 | 半导体装置及其制造方法 |
US20130105980A1 (en) * | 2011-10-27 | 2013-05-02 | Hitachi, Ltd. | Sinterable bonding material using copper nanoparticles, process for producing same, and method of bonding electronic component |
US20140346659A1 (en) * | 2012-03-28 | 2014-11-27 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113039870A (zh) * | 2018-11-15 | 2021-06-25 | 纬湃科技有限责任公司 | 电路载体、(电力)电子组件和电驱动装置 |
US12051948B2 (en) | 2018-11-15 | 2024-07-30 | Vitesco Technologies GmbH | Circuit carrier, (power) electronics assembly and electrical drive device |
Also Published As
Publication number | Publication date |
---|---|
CN107924892B (zh) | 2021-03-23 |
US11276623B2 (en) | 2022-03-15 |
EP3338302B1 (de) | 2019-05-01 |
DE102015216047A1 (de) | 2017-02-23 |
WO2017032581A1 (de) | 2017-03-02 |
EP3338302A1 (de) | 2018-06-27 |
US20180174947A1 (en) | 2018-06-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10991643B2 (en) | Power module comprising a housing which is formed in levels | |
JP5587844B2 (ja) | パワー半導体モジュールおよびその製造方法 | |
CN102017135B (zh) | 带有在多个接触平面中的元器件的基板电路模块 | |
CN108074888B (zh) | 具有双面冷却的电源模块 | |
US7683460B2 (en) | Module with a shielding and/or heat dissipating element | |
CN110998827B (zh) | 具有至少一个功率半导体的功率模块 | |
US10763244B2 (en) | Power module having power device connected between heat sink and drive unit | |
CN111916411A (zh) | 对用电器进行可控的电功率供应的功率模块 | |
JP2007103948A (ja) | 絶縁中間層を備えたパワー半導体モジュール及びその製造方法 | |
CN101593709A (zh) | 含烧结接头的模块 | |
JP6610101B2 (ja) | 半導体モジュール | |
CN107924892A (zh) | 电路载体、包括电路载体的功率电子安排 | |
US9871025B2 (en) | Commutation cell | |
CN110098178A (zh) | 半导体器件 | |
KR102020070B1 (ko) | 전력반도체 모듈 및 전력반도체 모듈의 제조 방법 | |
CN109716877B (zh) | 电子组件 | |
CN104867863A (zh) | 电子模块的制造 | |
US20220418088A1 (en) | Power module with housed power semiconductors for controllable electrical power supply of a consumer, and method for producing same | |
JP4949159B2 (ja) | 回路基板及びこれを用いたパッケージ並びに電子装置 | |
US20220225491A1 (en) | Flexible circuit board with thermally conductive connection to a heat sink | |
CN102150259B (zh) | 半导体装置以及用于制造半导体装置的方法 | |
JP6274019B2 (ja) | 半導体装置及びその製造方法 | |
CN103069565A (zh) | 用于制造电路的方法和电路 | |
US20240057255A1 (en) | Method of manufacturing a printed circuit board assembly | |
WO2022137704A1 (ja) | パワーモジュールおよび電力変換装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230417 Address after: Regensburg, Germany Patentee after: WeiPai Technology Co.,Ltd. Address before: 9 Valen Ward street, Hannover, Germany Patentee before: CONTINENTAL AUTOMOTIVE GmbH |
|
TR01 | Transfer of patent right |