CN107924892A - Circuit carrier includes the power electronic arrangement of circuit carrier - Google Patents
Circuit carrier includes the power electronic arrangement of circuit carrier Download PDFInfo
- Publication number
- CN107924892A CN107924892A CN201680048039.8A CN201680048039A CN107924892A CN 107924892 A CN107924892 A CN 107924892A CN 201680048039 A CN201680048039 A CN 201680048039A CN 107924892 A CN107924892 A CN 107924892A
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- Prior art keywords
- copper
- layers
- cooling body
- circuit carrier
- power component
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/02—Coating starting from inorganic powder by application of pressure only
- C23C24/04—Impact or kinetic deposition of particles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/321—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer with at least one metal alloy layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The present invention relates to a kind of circuit carrier (ST) for being used to keep at least one electrical power component (BE), which includes：Cooling body (KK), for keeping and cooling down the power component (BE), which has surface (OF1)；Layers of copper (KS), for making the cooling body (KK) be mechanically connected at least one copper coin (KP), wherein, the layers of copper (KS) is made of copper or copper alloy, and is applied to by cold air power spraying and coating or by sintering on the surface (OF1) of the cooling body (KK)；At least one copper coin (KP), for making the power component (BE) mechanically and electrically be connected to the layers of copper (KS), wherein, the copper coin (KP) is made of copper or copper alloy, and directly it is arranged in backwards on the surface (OF2) of the cooling body (KK), and be connected in a manner of plane, mechanical and conductive in the layers of copper (KS) of the layers of copper (KS).
Description
Technical field：
It is used to keep the circuit carrier of at least one electrical power component the present invention relates to a kind of, and is related to before one kind includes
State the power electronic arrangement of circuit carrier.
The prior art：
Since power attenuation is higher and therefore associated heat is released, so power component is usually placed in good
On the ceramic circuit carrier (DCB) of thermal conductivity.Conductance track body is formed on ceramic circuit carrier, via conductance track body, work(
Rate component is electrically connected to each other and is electrically connected with external electrical component.However, it is insufficient via the radiating efficiency of ceramic circuit carrier,
Therefore cannot substantially ensure that prevents power component from overheating.Ceramic circuit carrier is expensive.Moreover, in some application fields,
Such as in automobile industry, particularly, it is necessary to preferably radiate in hybrid electric vehicle/electric vehicle field.
It is therefore an object of the present invention to the possibility of efficient and cost-efficient heat dissipation is provided for power component.
The content of the invention：
This purpose is realized by subject matter of the independent claims.Favourable configuration is the theme of dependent claims.
According to the first aspect of the invention, there is provided a kind of circuit carrier for being used to keep at least one power component.
Circuit carrier includes the cooling body with surface, and the cooling body is implemented for keeping and cooling power component.
Circuit carrier further comprises layers of copper, which is made of copper or copper alloy, and is implemented for mechanically connecting cooling body
Onto at least one copper coin.In this case, layers of copper cold air is sprayed or is sintered on the surface in cooling body.Circuit carrier
At least one copper coin is further included, which is equally made of copper or copper alloy, and is implemented for making power component mechanically
And it is conductively connected in layers of copper.In this case, copper coin is directly arranged in layers of copper backwards to cooling body surface on, and
And plane earth, mechanically and it is conductively connected in layers of copper.
In this case, power component can be passive or active electrical or electronic unit, such as power capacitor
Or power semiconductor switch.Power component can also be the electric conductor for being used for transmission electric current of the current strength more than 100 amperes.
Cooling body is used as radiator, and absorbs the waste heat produced during operation on power component.Moreover, cooling body
Carrier as power component and/or the conductor rail for reaching power component, and provided for power component and/or conductor rail
Mechanical support.Thus otherwise to instead of be essential expensive ceramics for keeping power component and conductor rail to cooling body
Circuit carrier.Therefore the cost of circuit carrier is reduced.
Layers of copper is used as being used for the conductor rail from/to power component transmission electric current.For this purpose, layers of copper has according to power
The predetermining circuit of electronics arrangement is laid out and the route of structuring.Moreover, layers of copper is used as being used for passing from the waste heat of power component in the future
It is delivered to the efficient heat transfer element of cooling body.Layers of copper is on cooling body surface using cold air spraying or sintering process shaping.
In this application, " layer " refers to the covering that plane earth (particularly in planar fashion) extends and is made of respective material
Thing, the thickness that the covering has is particularly 0.5 millimeter maximum to be 1 millimeter maximum, especially 0.2 millimeter maximum, such as most
It is 0.1 millimeter big.Thus, layers of copper is the covering that the plane being made of copper of the layer thickness less than 1 millimeter or copper alloy extends, this is covered
Cover material is sprayed or sintered and manufactured by cold air.
Copper coin be made of copper or copper alloy, for example from be made of copper or copper alloy foil punching press or with certain
The thin plate that kind other modes are cut out.Copper coin is not especially with cold gas spray or sintering method or other similar painting method systems
Make or the molding layers of copper on the above-mentioned surface of cooling body.Copper coin allows for soldering connection and is welded to connect.As
Mating member is welded, copper coin can be easily soldered on electric conductor, be sent out especially by laser welding or using ultrasonic wave
Raw device (Sonotroden) is welded.
" (the mechanical and/or electric) connection of plane " refers to (the mechanical and/or electric) connection of the contact zone via extension, should
Contact zone substantially extends in the whole electrical contact area of the electric terminal for the power component for needing electrical contact and thus provides
The maximum possible heat transfer area of cooling body is reached via copper coin and layers of copper from power component.Thus " plane connection " can be real
The now high efficiency and heat radiation from power component to cooling body.
" directly arrange " refers to arrangement of the power component on copper coin, the arrangement only via be directly connected to layer formed, without
With other intermediate layer or other intermediary elements, the other intermediate layer or other intermediary elements are not implemented to use by main
In the direct machinery and physical connection that produce power component and copper coin.Therefore, power component is only via articulamentum plane earth, machine
Tool and be conductively directly connected on copper coin.
The layers of copper and copper coin being made of copper or copper alloy have very high thermal conductivity, and thus enable that power component
High efficiency and heat radiation.
In addition, layers of copper makes it possible to realize copper coin and/or power component and the cost-effective mechanical connection of cooling body.Borrow
Help make layers of copper cold air spray or sinter on the surface of cooling body, layers of copper has highly-malleable, and can compensate cooling
Differential thermal expansion between body and copper coin and/or power component.Therefore layers of copper ensures copper coin and therefore also assures power component still
So it is firmly adhered in cooling body, although there are mechanical stress due to differential thermal expansion.
Thus provide the efficient and cost-effective heat dissipation for power component.
Preferably, the thickness that layers of copper has is at least 45 microns, especially at least 50 microns, especially at least 100 microns.
Preferably by copper coin soldering on the surface of layers of copper, and it is used as layers of copper being connected at least one power component
Bonding pad.Since layers of copper and copper coin are made of same or similar copper-based material, so they can be with simple side
Formula is brazed each other.The bonding pad of copper coin make it possible to realize for power component high current terminal stabilization electrically and mechanically
Connection.
The material thickness that copper coin preferably has is at least 0.9 millimeter, especially at least 1 millimeter, and especially at least 2 in the least
Rice.
Preferably, circuit carrier further comprises insulating layer, the insulating layer be disposed in the surface of cooling body and layers of copper it
Between and layers of copper is mechanically connected in cooling body while making layers of copper be electrically insulated with cooling body.In this case, insulate
Layer is formed by material be electrically insulated and heat conduction (particularly ceramics).
Preferably, insulating layer cold air is sprayed or sintered on the surface of cooling body.
Insulating layer has layer thickness, and cooling body electricity is absolutely with (possible conduction) for making layers of copper in an efficient way for the layer thickness
Edge is sufficiently thick, and is sufficiently thin for the waste heat from power component can be efficiently delivered to cooling body.
According to another aspect of the present invention, there is provided a kind of power electronic arrangement.The power electronic arrangement is included at least
One power component and the circuit carrier described at least more than one.In this case, power component is arranged at circuit load
The copper coin of body on the surface of cooling body, and by plane earth, mechanically and be conductively connected on copper coin.
The favourable configuration of above-described circuit carrier, it is suitable for the situation of above-mentioned power electronic arrangement
Under, also it is considered as the favourable configuration of power electronic arrangement.
Brief description of the drawings：
Hereinafter reference will be made to the drawings is explained in greater detail exemplary embodiment of the invention.In the present case, unique figure attached 1
Figure with shown with signal meaning property section sectional drawing face diagram illustrate out root according at all according to Fa Benmingfa bright one one
Apply the sub- rate peace electricity of the real electric work for applying work(example rate of example for real and arrange sub- L peaces A.Arrange LA.
It is, for example, the electric power drive for hybrid electric vehicle/electric vehicle that the power electronic shown in figure, which arranges LA,
A part for a part for the inverter of dynamic device or the output stage of inverter.
Power electronic arranges LA to include circuit carrier ST and the power semiconductor switch (work(on circuit carrier ST
Rate component) BE.
Circuit carrier ST includes the cooling body KK for being made of aluminium and being manufactured with pressure casting method.Cooling body KK has the table of plane
Face OF1, insulating layer IS are arranged on a surface.In this case, insulating layer IS is made of the thermal conductive ceramic being electrically insulated, and
And it is applied in cold air spraying process on the surface OF1 of cooling body KK.Insulating layer IS make power semiconductor switch BE with it is cold
But body KK is electrically insulated, while the waste heat from power semiconductor switch BE is transferred to cooling body KK.
On the surface OF2 backwards to cooling body KK of insulating layer IS, circuit carrier ST has layers of copper KS, which is closed by copper
Gold is formed and is applied in another cold air spraying process on the OF2 of surface.Layers of copper KS is used to make copper coin KP (will be below
It is described) mechanically and electrically it is connected on cooling body KK.
On the surface OF3 backwards to cooling body KK of layers of copper KS, circuit carrier ST has two copper coin KP, the two copper coins
By plane earth, it is soldered to mechanically and conductively on layers of copper KS.
Power semiconductor switch BE be arranged at one of two copper coin KP backwards to cooling body KK surface OF4 on.Power
Semiconductor switch BE on a surface have plane earth formed electric terminal EA1, the electric terminal for example by soldering and via
Brazed joints LV plane earths, mechanically and be conductively connected on copper coin KP.
Closing line BD is arranged at the same on the surface OF5 of cooling body KK of another copper coin KP, the closing line
Mechanically and it is conductively connected to via brazed joints LV on copper coin KP.Closing line BD is brazed further mechanically couply and conductively
Onto another electric terminal EA2 of power semiconductor switch BE.
In addition, electric conductor EL or its contact terminal are arranged on the surface OF5 of other copper coin KP, and via welding
Connecting portion SV (for example, being welded using supersonic generator) plane earth, mechanically and be conductively connected on copper coin KP.
In addition, sealant DS is arranged on surface OF3, OF4, OF5 of layers of copper KS and two copper coin KP, thus layers of copper KS
The sealant exposed region not covered by corresponding coating or circuit block with two copper coin KP is in a manner of medium-tight
It is capped and is protected from environment influence, it is such as moist.Sealant DS is for example by being molded in OF3, OF4, OF5
Electric insulation and heat conduction mold compound on surface with surrounding is made.
Claims (7)
1. one kind is used for the circuit carrier (ST) for keeping at least one electrical power component (BE), which includes：
- cooling body (KK), for keeping and cooling down the power component (BE), the cooling body has surface (OF1)；
- layers of copper (KS), for making the cooling body (KK) be mechanically connected at least one copper coin (KP), wherein, the layers of copper (KS)
It is made of copper or copper alloy, and by cold air is sprayed to or be sintered on the surface (OF1) of the cooling body (KK)；
- at least one copper coin (KP), for making the power component (BE) mechanically and electrically be connected to the layers of copper (KS), its
In, which is made of copper or copper alloy, and be arranged directly in the cooling body (KK) backwards of the layers of copper (KS)
On surface (OF3), and plane earth, mechanically and it is conductively connected in the layers of copper (KS).
2. circuit carrier (ST) as claimed in claim 1, wherein, the thickness which has is at least 45 microns, special
It is not at least 50 microns, especially at least 100 microns.
3. circuit carrier (ST) as claimed in claim 1 or 2, wherein, which is brazed on being somebody's turn to do for the layers of copper (KS)
On surface (OF3), and for making the layers of copper be electrically and mechanically connected at least one power component (BE).
4. circuit carrier (ST) according to any one of the preceding claims, wherein, the thickness which has be to
It is 0.9 millimeter few, especially at least 1 millimeter, especially at least 2 millimeters.
5. circuit carrier (ST) according to any one of the preceding claims, further comprises insulating layer (IS), the insulating layer
It is arranged between the surface (OF1) of the cooling body (KK) and the layers of copper (KS), and mechanically connects the cooling body (KK)
On to the layers of copper (KS) and the cooling body is set to be electrically insulated with the layers of copper.
6. circuit carrier (ST) as claimed in claim 5, wherein, which is sprayed or sintered in the cooling by cold air
On the surface (OF1) of body (KK).
7. a kind of power electronic arrangement (LA), including：
- at least one electrical power component (BE)；
- at least one circuit carrier (ST) according to any one of the preceding claims, wherein, which is pacified
Come the copper coin (KP) on the surface (OF4) of the cooling body (KK), and by plane earth, mechanically and conductively connected
Onto the copper coin (KP).
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102015216047.5 | 2015-08-21 | ||
| DE102015216047.5A DE102015216047A1 (en) | 2015-08-21 | 2015-08-21 | Circuit carrier, power electronics assembly with a circuit carrier |
| PCT/EP2016/068859 WO2017032581A1 (en) | 2015-08-21 | 2016-08-08 | Circuit carrier, power electronics assembly having a circuit carrier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107924892A true CN107924892A (en) | 2018-04-17 |
| CN107924892B CN107924892B (en) | 2021-03-23 |
Family
ID=56683940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680048039.8A Active CN107924892B (en) | 2015-08-21 | 2016-08-08 | Circuit carrier, power electronic structure comprising a circuit carrier |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11276623B2 (en) |
| EP (1) | EP3338302B1 (en) |
| CN (1) | CN107924892B (en) |
| DE (1) | DE102015216047A1 (en) |
| WO (1) | WO2017032581A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113039870A (en) * | 2018-11-15 | 2021-06-25 | 纬湃科技有限责任公司 | Circuit carrier, (power) electronic assembly and electric drive |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102020205979A1 (en) | 2020-05-12 | 2021-11-18 | Robert Bosch Gesellschaft mit beschränkter Haftung | Power module with a heat sink |
| EP4084058A1 (en) * | 2021-04-27 | 2022-11-02 | Siemens Aktiengesellschaft | Electronic assembly with circuit carrier, semiconductor chip and heat sink |
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|---|---|---|---|---|
| JPH06283639A (en) * | 1993-03-25 | 1994-10-07 | Sanyo Electric Co Ltd | Hybrid integrated circuit |
| JP2012222327A (en) * | 2011-04-14 | 2012-11-12 | Aisin Aw Co Ltd | Semiconductor device and manufacturing method of the same |
| DE102011076774A1 (en) * | 2011-05-31 | 2012-12-06 | Continental Automotive Gmbh | Semiconductor component for use in e.g. power electronic area, has solderable layers formed at surfaces of carrier and cooling body, respectively, where surfaces of carrier and body face body and carrier, respectively |
| US20130105980A1 (en) * | 2011-10-27 | 2013-05-02 | Hitachi, Ltd. | Sinterable bonding material using copper nanoparticles, process for producing same, and method of bonding electronic component |
| CN103703560A (en) * | 2011-08-04 | 2014-04-02 | 三菱电机株式会社 | Semiconductor device and method for producing same |
| US20140346659A1 (en) * | 2012-03-28 | 2014-11-27 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
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| CN104603933B (en) * | 2012-08-31 | 2018-09-18 | 三菱综合材料株式会社 | Power module substrate and power module |
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- 2016-08-08 CN CN201680048039.8A patent/CN107924892B/en active Active
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| CN113039870A (en) * | 2018-11-15 | 2021-06-25 | 纬湃科技有限责任公司 | Circuit carrier, (power) electronic assembly and electric drive |
| US12051948B2 (en) | 2018-11-15 | 2024-07-30 | Vitesco Technologies GmbH | Circuit carrier, (power) electronics assembly and electrical drive device |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3338302B1 (en) | 2019-05-01 |
| US20180174947A1 (en) | 2018-06-21 |
| DE102015216047A1 (en) | 2017-02-23 |
| US11276623B2 (en) | 2022-03-15 |
| CN107924892B (en) | 2021-03-23 |
| EP3338302A1 (en) | 2018-06-27 |
| WO2017032581A1 (en) | 2017-03-02 |
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