CN101960608A - 半导体设备以及半导体设备的制造方法 - Google Patents

半导体设备以及半导体设备的制造方法 Download PDF

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CN101960608A
CN101960608A CN200980107640XA CN200980107640A CN101960608A CN 101960608 A CN101960608 A CN 101960608A CN 200980107640X A CN200980107640X A CN 200980107640XA CN 200980107640 A CN200980107640 A CN 200980107640A CN 101960608 A CN101960608 A CN 101960608A
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insulator
semiconductor element
light accepting
accepting part
bond pad
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CN200980107640XA
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古屋敷纯也
吉川则之
福田敏行
丝冈敏昌
宇辰博喜
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Publication of CN101960608A publication Critical patent/CN101960608A/zh
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Abstract

本发明提供半导体设备以及半导体设备的制造方法。其中，通过在包围半导体元件的受光部的部分设置绝缘体并在其外侧设置密封树脂，使得绝缘体在从受光部观察的状态下向外侧翘曲，从而漫反射的光不会再次返回半导体元件的受光部。

Description

半导体设备以及半导体设备的制造方法
技术领域
本发明涉及半导体设备以及半导体设备的制造方法，尤其涉及在基板上搭载有具备受光部的半导体元件的半导体设备以及半导体设备的制造方法。
背景技术
半导体受光装置在设置有电极的基板上配置光敏芯片，并以透明保护层将其覆盖。这是因为要保护电极焊盘、引线、受光部的部分不受基于外界空气中所含的水分的腐蚀和尘埃的影响。
然而，近年来，因电子设备的小型化，将包括半导体受光装置的部件小型化并装入电子设备的部件的一部分以形成一体化的部件的情形有所增加。这种一体化部件大多用树脂将外形部分密封，从而基本上没有进入水分、尘埃的间隙。
另外，在硬盘驱动器装置中，驱动器装置本身为封闭状态，其内部充满水分、尘埃非常少的清洁的气体。
在这种处于密封状态的半导体受光装置中，没有必要如上所述地以透明保护层进行覆盖，可以暴露受光部。暴露受光部的半导体受光装置能够获得提高受光灵敏度的效果。需要说明的是，暴露受光部的半导体芯片被称作裸芯片。
专利文献1所公开的半导体受光装置的制造方法是通过光刻法在受光部的上方载置抗蚀剂、然后在模制树脂后除去所述抗蚀剂以形成裸芯片。
专利文献1：日本特开2007-150038号公报
在省去受光部上的透明保护层的半导体受光装置中，用于连接基板和光敏芯片的端子部分等由密封树脂模制，而只露出受光部分。即，在由树脂体形成的凹部的底部形成受光部分。
在这种半导体受光装置中，若由树脂体形成的凹部的壁面所反射的光入射到受光部分，则入射光在受光元件表面反射，在受光元件表面反射的光将遇到密封树脂的壁面，并形成漫反射状态。该漫反射光由受光元件再次受光从而造成受光元件的输出不稳定的问题。
发明内容
为了解决上述问题，本发明的半导体设备包括半导体元件和搭载该半导体元件的基板，所述半导体设备构成为，所述半导体元件在一面上具备受光部和接合焊盘，该一面的背面侧搭载在所述基板上，在搭载所述半导体元件一侧的面即所述基板的搭载面上形成有引出电极，所述接合焊盘和所述引出电极通过金属细线连接，在所述半导体元件的所述一面上设置有存在于所述受光部和所述接合焊盘之间且包围该受光部的第一绝缘体，所述接合焊盘和所述金属细线通过密封树脂密封，在所述半导体元件的所述一面上，所述第一绝缘体的外周和所述密封树脂接触，面向所述受光部且包围该受光部的所述第一绝缘体的内周壁，具有随着远离所述半导体元件的所述一面而开口面积变大的锥形形状。
发明效果
由于本发明的半导体设备在受光部的周围形成绝缘体的框体并且在该框体的外侧形成密封树脂，所以在密封树脂硬化时框体向外侧被拉引，从而倾斜地形成框体的壁面。因此，能够获得即使在受光部反射的不需要的光在壁面漫反射，半导体设备也不会误动作的效果。
附图说明
图1(a)是表示本实施方式的半导体设备的结构的示意俯视图，图1(b)是示意剖视图。
图2是表示构成实施方式的半导体设备的半导体元件的放大部分的图。
图3是表示实施方式的半导体设备的制造方法的工序的图。
图4是表示实施方式的半导体设备的制造方法的工序的图。
图5是表示实施方式的半导体设备的制造方法的工序的图。
图6是说明形成第一绝缘体的过程的图。
图7是表示实施方式的半导体设备的制造方法的工序的图。
图8是表示引线接合的工序的图。
图9是表示实施方式的半导体设备的制造方法的树脂模制的工序的图。
图10是表示实施方式的半导体设备的制造方法的树脂模制的工序的图。
图11是表示实施方式的半导体设备的制造方法的切制的工序的图。
图12是表示实施方式的半导体设备的一个变形例的图。
图13是表示实施方式的半导体设备的一个变形例的图。
图14是表示实施方式的半导体设备的一个变形例的图。
图15是表示实施方式的半导体设备的一个变形例的图。
图16是表示实施方式的半导体设备的一个变形例的图。
图17是表示相关技术中的搭载有裸芯片的半导体设备的图。
图18是图17的裸芯片的元件周边的放大图。
符号说明
1半导体设备
3基板
5基板表面
7一面
10半导体元件
12受光部
14接合焊盘
16接合焊盘
18引出电极
20接合引线(金属细线)
22搭载面
24密封树脂
26、27贯通电极
28、29背面电极
30第一绝缘体
31第二绝缘体
34壁面
39开口部
43贯通孔
61第三绝缘体
具体实施方式
在与本申请相关的技术中，可以想到如图17所示的在基板上搭载有裸芯片的半导体受光装置。该半导体受光装置在基板3上搭载裸芯片10，并且裸芯片上的电极焊盘74和基板3的引出电极78之间用基于引线接合的接合引线20连接。而且，除了受光部12，以树脂90模制电极焊盘74、接合引线20和电极连接部。为了形成这种结构，需要预先用一些物质(例如抗蚀剂)保护受光部12之后进行基于树脂90的模制。
图18是受光部12附近的剖视图。在由树脂90所包围的凹部的底部配置有受光部12。在此，若存在来自周围的入射光92，则会在受光部12反射、在树脂90的壁面94反射，从而产生漫反射98。
若光入射到这种半导体受光装置，则在受光元件表面反射的光遇到树脂的壁面而形成漫反射。该漫反射光由受光元件再次受光，因而存在使受光元件的输出不稳定的问题。
具体而言，在半导体受光装置连续地并列设置的情况下有时会出现这种问题。即，相邻的受光装置用的光从斜向入射并在受光部分全反射，遇到树脂的壁面而发生漫反射，因而存在误认为受光部似乎已经将光受光的情况。
另外，该树脂的壁面具有数百μm左右的大小，在形成树脂后不容易进行机械加工。另外，在为了避免产生上述的乱发射而在将壁面94倾斜如壁面96的状态下实施光刻法的情况下，工序变得更加复杂并且成本增加。
本申请发明人等反复研究用于解决这些问题的各种方案，其结果是得到了本申请的发明。以下参照附图说明实施方式。
(实施方式1)
图1表示实施方式1的半导体设备1的结构。图1(a)为俯视图，图1(b)为剖视图。半导体设备1具有在配置有引出电极18的基板3的搭载面22上搭载有半导体元件10的结构。半导体元件10，在硅等半导体基板的一侧的面(一面)7上形成有受光部12和用于引线接合的接合焊盘14。需要说明的是，在图1(a)中，为了便于理解说明，在非剖面的受光部12和第一绝缘体30加有斜线。
在一个半导体元件10上可以有多个受光部12。图1示出了在一个半导体元件10上形成有三个受光部12的例子。半导体元件10上的受光部12和接合焊盘14的位置关系如下，即，接合焊盘14配置在半导体元件10的一面7的外周部分，与接合焊盘14相比，受光部12配置在一面7的中央部分。在本实施方式中，接合焊盘14以四个为一组的方式在左右上下形成。
基板3虽无特别的限制，但是可适当地使用玻璃环氧(ガラスエポキシ)等环氧系、苯酚系、特氟龙(注册商标)系、聚乙烯系等。在基板3的搭载面22上形成有多个引出电极18，作为该引出电极18的一部分形成有基板侧接合焊盘16。基板侧接合焊盘16用于与半导体元件10侧的接合焊盘14进行引线接合。需要说明的是，也可以省略基板侧接合焊盘16而直接在引出电极18进行引线接合。
不仅在基板3上、在基板3的侧面也可以形成引出电极18，还可以通过通孔在基板3的背面形成引出电极18。图1示出了围绕基板3的侧面并形成到背面的情形。
基板3和半导体元件10在彼此的接合焊盘16、14通过接合引线(金属细线)20连接。在此，半导体元件10侧的接合焊盘14存在于比作为基板3的表面的搭载面22更高的位置，并且未形成在半导体元件10的侧面的部分。在本实施方式中，接合引线20暂时从基板侧的接合焊盘16向上方立起，然后连接到半导体元件侧的接合焊盘14。这是因为是通过后述的逆引线法(逆ワイヤ一法)制成的。
除了基板3上的半导体元件10的受光部12的部分以及接合引线20由密封树脂24密封。半导体元件10上的接合焊盘14也由密封树脂24密封。这是为了保护基板3与半导体元件10的粘合部分、接合引线20。但是，只有半导体元件10的受光部12的部分未被密封树脂24覆盖。这是因为没有密封树脂24的结构能够提高受光灵敏度。
在本实施方式中的半导体设备1中，在半导体元件10上以包围受光部12的方式形成有第一绝缘体30，其在保护半导体元件10免受因静电导致的损害的同时还形成和密封树脂24的边界。另外，在受光部12和接合焊盘14之间设置有第一绝缘体30。
在将密封树脂24成型时，第一绝缘体30发挥壁体和缓冲物的作用。即，将用于在成型时避免密封树脂24进入受光部12的第一绝缘体30作为密封树脂24的阻挡壁并使模具的压力不直接作用于半导体元件10。若没有第一绝缘体30，则模具不得不直接接触半导体元件(受光元件)10，导致树脂从半导体元件10和模具的间隙漏出。
另外，若将模具直接接触半导体元件10，将因其压力对半导体元件10造成不良影响。第一绝缘体30防止此种影响。
另外，第一绝缘体30具有正好充分密封接合引线20的高度33。因此，第一绝缘体30需要具有距离半导体元件10的表面30乃至300μm的高度。需要说明的是，为了降低半导体设备1的高度，上述高度优选为50乃至100μm。
另外，第一绝缘体30形成在距离接合焊盘14规定的距离32的位置。这是因为需要使用逆引线法形成接合引线20，避免毛细管和第一绝缘体30在此时发生碰撞。此距离32需要至少为10μm。另外，若过分远离，则必须增大半导体元件10，优选为50μm以下。
另外，第一绝缘体30在受光部12的周围形成有开口部39，并可根据光的种类、特性进行扩大/缩小开口部39的大小的设计。
图2是放大了受光部12附近的剖视图。在受光部12的两肋存在第一绝缘体30。在此，作为半导体设备1的制造顺序，首先形成第一绝缘体30，然后将密封树脂24射出成型，因此密封树脂24被冷却而收缩，从而产生张力应力35。由于该张力应力35，第一绝缘体30被拉向外侧(相接触的密封树脂24侧)。其结果是，从受光部12观察到的第一绝缘体30的内周壁向外侧翘曲。即，在开口部39，第一绝缘体30的内周壁随着远离半导体元件10的一面7(随着向上方移动)其开口面积增大，从而成为锥形形状。
在此，在有入射光92的情况下，由于在受光部12发射的光，在弯曲的第一绝缘体30的内壁面34发生漫反射，所以大部分被释放到受光部12外。这样，返回受光部12的漫反射光减少。因此，半导体元件10的输出稳定。
该第一绝缘体30的翘曲40的大小虽因第一绝缘体30的宽度、高度以及密封树脂24的长度而变化，但是由于密封树脂24的线膨胀系数为10-5的数量级，所以翘曲40为几μm至10μm。需要说明的是，“翘曲40”也可以说是从受光部12观察时第一绝缘体30的内周壁向外侧倾斜。
接下来，参照图3说明本实施方式的半导体设备的制造方法。
基板3具有作为搭载半导体元件的搭载面的基板表面5，其两侧形成有贯通孔43。从基板3切制多个半导体设备。在贯通孔43的内周面预先形成引出电极18，并在与其连接的基板表面5以及基板背面也形成引出电极18。引出电极18使用铜、铝、金、银的导电性材料形成。
在图4中示出了在基板表面5使用粘合剂粘合半导体元件10。而且，在图5中示出了在受光部12的周围形成第二绝缘体31以及第一绝缘体30。通过堆积抗蚀剂形成第一绝缘体30。第二绝缘体31形成在贯通孔43附近的基板表面5上的引出电极18上，其发挥在密封树脂24的成形时防止树脂从模具漏出(高对合性)以及用于承受模具的缓冲物的作用。若没有第二绝缘体31，由于在成形时模具会越到引出电极18上(接触)，所以在模具和引出电极18之间的基板3上将产生间隙，从而造成树脂的漏出。进而，第二绝缘体31还发挥用于避免模具接触引出电极18而在模具的压力下发生变形的作用。
由于在第一绝缘体30的形成工序中包含使用碱溶液等的清洗工序，所以适合在形成第一绝缘体30之后使用印刷等方法形成第二绝缘体31。需要说明的是，也可以在其他时刻形成第二绝缘体31。例如，也可以在刚形成图3所示的引出电极18之后、与形成第一绝缘体30同时形成。
图6表示第一绝缘体30的制造方法。图6(a)中示出了在半导体元件10上涂敷抗蚀剂50。所使用的抗蚀剂50优选使用正片型的树脂抗蚀剂。因为，在进行多次堆积的情况下，采用感光部分硬化的正片型可提高制造精度。对于涂敷方法虽无特别的限制，但是由于只在半导体元件10上涂敷抗蚀剂50，所以印刷法能够适宜地利用。
接下来，参照图6(b)。通过使抗蚀剂50干燥并进行低温烧成，将涂敷膜硬化，利用正片用的掩膜51使光接触抗蚀剂50的一部分而使其感光。感光用的光52所接触到的部分53的抗蚀剂发生硬化。
接下来，参照图6(c)、(d)。除去掩膜51后，再次涂敷抗蚀剂50，并反复进行烧成、感光的步骤。最后，如图6(e)所示，用碱溶液除去未感光的部分，以形成第一绝缘体30。
在图7中示出了通过引线接合连接半导体元件10和基板3的引出电极18的情形。由此，半导体元件10和基板3的引出电极18通过接合引线20电连接。引线接合的方法可以使用球形焊接、楔形焊接的方法。但是在进行引线接合时，使用逆引线法。
图8表示逆引线方法的示意图。以与对半导体元件侧进行第一接合并对基板等连接对象进行第二接合这种通常的引线接合方法相反的顺序进行引线接合的方法即为逆引线法。图8(a)表示在基板3上搭载的半导体元件10的一部分。在半导体元件10上，在受光部12与接合焊盘14之间形成有第一绝缘体30。另外，在基板3上形成有基板侧的接合焊盘16。接合焊盘16也可以是引出电极18本身。
在图8(a)中示出了在毛细管56的前端呈球状地形成有引线的前端的状态。首先，使毛细管56向接合焊盘16侧移动，并使前端的球体接触基板3的接合焊盘16。然后，通过向球体传递热量、负荷、超声波而形成第一接合57。
在图8(b)中示出了将毛细管56倾斜地拉升到与进行第二接合的位置相反方向上的一定高度的情形。在这种情况下，进行第二接合的位置是半导体元件10上的接合焊盘14的位置。
在图8(c)中示出了毛细管56移动到之后进行第二接合的半导体元件10的接合焊盘14的情形。这样，通过向与第二接合部的方向相反的方向拉升，能够确保引线接合所需要的接合引线20的长度，还能够避免半导体元件10的端边和接合引线20接触，抑制切断缺陷的发生。
在图9中，示出了在进行了引线接合之后将模具45、46压接在基板3以及第一绝缘体30上并施加压力(图9(a))并同时从图11所示的树脂的流动方向47填充密封树脂24(图9(b))的情形。密封树脂24是从纸面表面方向朝向背面方向地填充的。将模具压在基板3以及第一绝缘体30上是为了避免密封树脂从第一绝缘体30和模具45的间隙漏出。因此，从第一绝缘体30到受光部12侧未填充树脂。
在图10中示出了在密封树脂24冷却凝固后去除模具的情形。流入的密封树脂24与冷却的第一绝缘体30的外周部分接触并粘合。而且，因密封树脂24本身冷却凝固时密封树脂24收缩，产生使第一绝缘体30远离受光部12方向的应力35(图10(a))。第一绝缘体30因该应力而以远离受光部12的方式向外侧倾斜(图10(b))。在图11中示出了其后以切断线60切断基板3而得到半导体设备的情形。需要说明的是，在图11中示出了密封树脂24填充后的部分和填充方向47。
以下，将半导体受光装置的变形例作为其他实施方式进行说明。需要说明的是，对与实施方式1相同的结构部分省略说明。
(实施方式2)
在图12中示出了具有将受光部12集中且第一绝缘体30宽度一定并且包围受光部12的结构的实施方式2的半导体设备。即，在实施方式1中，三个受光部12分别逐一地被第一绝缘体30包围，但是在实施方式2中将三个受光部12集中地由第一绝缘体30包围，在两个受光部12之间的部分未设置有第一绝缘体30。从而在形成绝缘体时能够使掩模形状、密封树脂的模具相对简单化。
(实施方式3)
在图13中示出了在第一绝缘体30和密封树脂24的连接边界部分(第一绝缘体30的外周壁)具有凸凹形状的实施方式3的半导体设备。通过形成凸凹形状，能够加强第一绝缘体30和密封树脂4的结合力。
(实施方式4)
在图14中示出了通过在基板3形成通孔并将引出电极18的一部分填充到通孔的导电体而形成的实施方式4的半导体设备。贯通电极26、27为填充到穿过基板3的贯通孔的内部的铜、铝、金等导电材料。背面电极28、29与贯通电极26、27电接合，其由铜、银、金等导电材料制成。
(实施方式5)
在图15中示出了在基板3的背面配置有第三绝缘体61的实施方式5的半导体设备。由于第三绝缘体61能够在密封树脂24成形时使基板3弯曲，所以能够使利用第一绝缘体30形成的受光部12上方的开口部39张开成在更靠上方打开的锥形形状。更具体而言，第三绝缘体61具有帮助将图10中的第一绝缘体30向外侧拉引的应力35的作用。需要说明的是，第三绝缘体61可以使用与第一绝缘体30相同的树脂。
另外，第三绝缘体61可以不只是对背面整体进行涂敷，也可以涂敷二分之一或者三分之一、抑或适当的形状，并设置未涂敷绝缘体的部分。这是因为通过调整绝缘体61的涂敷状态，能够调整基板3的弯曲量。
(实施方式6)
图16示出了对密封树脂24的外周缘进行了倒角的实施方式6的半导体设备的变形例。若提高印刷基板的集成度，则出现密封树脂24的外周缘的角部和其他部件接触的情况，通过尽量减少不必要的部分，能够获得防止与其他部分发生干涉的效果。
图16(a)是作为对角部的倒角加工而形成有台阶36的结构。另外，图16(b)是作为对角部的倒角加工而形成有锥面37的结构。另外，图16(c)表示作为倒角加工将角部形成为R形状38的情况。
对于这些倒角，可以通过预先在密封树脂用的模具45上实施倒角的的方式形成，也可以在形成密封树脂24之后通过切削加工、磨削加工形成。
(工业上的利用可能性)
本发明能够用于搭载有暴露了受光部分的裸芯片的半导体设备等。

Claims (9)

1.一种半导体设备，其包括半导体元件和搭载该半导体元件的基板，其中，
所述半导体元件在一面上具备受光部和接合焊盘，该一面的背面侧搭载在所述基板上，
在搭载所述半导体元件一侧的面即所述基板的搭载面上形成有引出电极，
所述接合焊盘和所述引出电极通过金属细线连接，
在所述半导体元件的所述一面上设置有存在于所述受光部和所述接合焊盘之间且包围该受光部的第一绝缘体，
所述接合焊盘和所述金属细线通过密封树脂密封，
在所述半导体元件的所述一面上，所述第一绝缘体的外周与所述密封树脂接触，
面向所述受光部且包围该受光部的所述第一绝缘体的内周壁，具有随着远离所述半导体元件的所述一面而开口面积变大的锥形形状。
2.如权利要求1所述的半导体设备，其特征在于，
所述金属细线通过使第二接合部与所述接合焊盘连接的逆引线法形成。
3.如权利要求1或2中任一项所述的半导体设备，其特征在于，
所述引出电极延伸到所述搭载面的外周缘，
在所述搭载面的外周，在所述引出电极上形成有第二绝缘体。
4.如权利要求1或2中任一项所述的半导体设备，其特征在于，
所述第一绝缘体以一定的宽度设置在所述半导体元件上。
5.如权利要求1或2中任一项所述的半导体设备，其特征在于，
在所述第一绝缘体的外周壁上设有凸凹。
6.如权利要求1或2中任一项所述的半导体设备，其特征在于，
在所述基板的与所述搭载面相反的一侧的背面设置有第三绝缘体。
7.如权利要求1或2中任一项所述的半导体设备，其特征在于，
在所述基板上形成有通孔。
8.如权利要求1至7中任一项所述的半导体设备，其特征在于，
所述密封树脂的外周缘的角部被倒角。
9.一种半导体设备的制造方法，其特征在于，
包括：
将具备受光部和接合焊盘的半导体元件搭载到具备引出电极的基板上的工序；
以包围所述半导体元件的受光部的方式在该受光部和所述接合焊盘之间将第一绝缘体设置在该半导体元件上的工序；
将所述接合焊盘和所述引出电极通过金属细线连接的工序；
将所述接合焊盘和所述金属细线通过密封树脂密封并使该密封树脂接触所述第一绝缘体的外周壁部的工序，
通过所述密封树脂硬化时的应力，所述绝缘体的内周壁的上部向外周壁侧倾斜。
CN200980107640XA 2008-03-11 2009-02-26 半导体设备以及半导体设备的制造方法 Pending CN101960608A (zh)

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