CN101960604B - 绝缘隐埋层中有带电区的衬底 - Google Patents

绝缘隐埋层中有带电区的衬底 Download PDF

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Publication number
CN101960604B
CN101960604B CN2008801278888A CN200880127888A CN101960604B CN 101960604 B CN101960604 B CN 101960604B CN 2008801278888 A CN2008801278888 A CN 2008801278888A CN 200880127888 A CN200880127888 A CN 200880127888A CN 101960604 B CN101960604 B CN 101960604B
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China
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insulating barrier
electric charge
layer
charge
limiting layer
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Expired - Fee Related
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CN2008801278888A
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Chinese (zh)
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CN101960604A (zh
Inventor
F·阿利贝尔
G·戈丹
F·拉勒芒
D·朗德吕
K·朗德里
M·沙欣
C·马聚
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Soitec SA
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Soitec SA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
CN2008801278888A 2008-03-13 2008-03-13 绝缘隐埋层中有带电区的衬底 Expired - Fee Related CN101960604B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IB2008/052203 WO2009112894A1 (en) 2008-03-13 2008-03-13 Substrate having a charged zone in an insulating buried layer

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201210480105.2A Division CN102983167B (zh) 2008-03-13 2008-03-13 半导体结构

Publications (2)

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CN101960604A CN101960604A (zh) 2011-01-26
CN101960604B true CN101960604B (zh) 2013-07-10

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CN2008801278888A Expired - Fee Related CN101960604B (zh) 2008-03-13 2008-03-13 绝缘隐埋层中有带电区的衬底

Country Status (6)

Country Link
US (3) US8535996B2 (ja)
EP (1) EP2269226A1 (ja)
JP (1) JP2011517061A (ja)
KR (1) KR101196791B1 (ja)
CN (1) CN101960604B (ja)
WO (1) WO2009112894A1 (ja)

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US9312133B2 (en) * 2011-08-25 2016-04-12 Aeroflex Colorado Springs Inc. Wafer structure for electronic integrated circuit manufacturing
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US9396947B2 (en) 2011-08-25 2016-07-19 Aeroflex Colorado Springs Inc. Wafer structure for electronic integrated circuit manufacturing
CN102969267B (zh) * 2011-08-31 2015-12-16 上海华力微电子有限公司 绝缘体上硅硅片及浮体动态随机存储器单元的制造方法
CN102969268B (zh) * 2011-08-31 2015-06-24 上海华力微电子有限公司 绝缘体上硅硅片及浮体动态随机存储器单元的制造方法
CN102969278A (zh) * 2011-08-31 2013-03-13 上海华力微电子有限公司 提高数据保持能力的浮体动态随机存储器单元制造方法
CN102412253A (zh) * 2011-11-30 2012-04-11 上海华力微电子有限公司 浮体效应存储器件用soi硅片及制造方法、存储器件
CN102446929A (zh) * 2011-11-30 2012-05-09 上海华力微电子有限公司 Soi硅片及其制造方法、浮体效应存储器件
US8796054B2 (en) * 2012-05-31 2014-08-05 Corning Incorporated Gallium nitride to silicon direct wafer bonding
CN102842622A (zh) * 2012-06-04 2012-12-26 西安邮电大学 一种基于钝化膜中嵌入电荷的晶体硅太阳电池
US9252185B2 (en) 2012-09-19 2016-02-02 Semiconductor Components Industries, Llc Back side illuminated image sensors with back side charge storage
US9094612B2 (en) 2012-09-25 2015-07-28 Semiconductor Components Industries, Llc Back side illuminated global shutter image sensors with back side charge storage
CN103456771B (zh) * 2013-07-26 2016-12-28 上海北车永电电子科技有限公司 半导体器件中实现载流子寿命控制的结构及其制造方法
US9832407B2 (en) 2014-11-26 2017-11-28 Semiconductor Components Industries, Llc Global shutter image sensor pixels having improved shutter efficiency
US9502457B2 (en) 2015-01-29 2016-11-22 Semiconductor Components Industries, Llc Global shutter image sensor pixels having centralized charge storage regions
US9590118B1 (en) * 2015-09-14 2017-03-07 Globalfoundries Inc. Wafer with SOI structure having a buried insulating multilayer structure and semiconductor device structure
US9704569B1 (en) 2016-10-06 2017-07-11 International Business Machines Corporation One time programmable read-only memory (ROM) in SOI CMOS
US20180175209A1 (en) * 2016-12-20 2018-06-21 Globalfoundries Inc. Semiconductor structure including one or more nonvolatile memory cells and method for the formation thereof
US11864947B2 (en) 2016-12-22 2024-01-09 Koninklijke Philips N.V. Systems and methods of operation of capacitive radio frequency micro-electromechanical switches
FR3077924B1 (fr) * 2018-02-13 2020-01-17 Soitec Structure demontable et procede de demontage utilisant ladite structure

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Also Published As

Publication number Publication date
EP2269226A1 (en) 2011-01-05
WO2009112894A1 (en) 2009-09-17
KR20100113117A (ko) 2010-10-20
KR101196791B1 (ko) 2012-11-05
CN101960604A (zh) 2011-01-26
US8735946B2 (en) 2014-05-27
US8535996B2 (en) 2013-09-17
WO2009112894A8 (en) 2009-12-10
JP2011517061A (ja) 2011-05-26
US20110012200A1 (en) 2011-01-20
US20140015023A1 (en) 2014-01-16
US20140225182A1 (en) 2014-08-14

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