CN1019243B - 在测试存贮器装置时写入数据的方法和测试存贮器装置的电路 - Google Patents

在测试存贮器装置时写入数据的方法和测试存贮器装置的电路

Info

Publication number
CN1019243B
CN1019243B CN90104915A CN90104915A CN1019243B CN 1019243 B CN1019243 B CN 1019243B CN 90104915 A CN90104915 A CN 90104915A CN 90104915 A CN90104915 A CN 90104915A CN 1019243 B CN1019243 B CN 1019243B
Authority
CN
China
Prior art keywords
data
pair
bit lines
control circuit
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CN90104915A
Other languages
English (en)
Chinese (zh)
Other versions
CN1048463A (zh
Inventor
崔勋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN1048463A publication Critical patent/CN1048463A/zh
Publication of CN1019243B publication Critical patent/CN1019243B/zh
Expired legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/30—Accessing single arrays
    • G11C29/34—Accessing multiple bits simultaneously
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/36—Data generation devices, e.g. data inverters

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
CN90104915A 1989-06-10 1990-06-09 在测试存贮器装置时写入数据的方法和测试存贮器装置的电路 Expired CN1019243B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019890008002A KR920001080B1 (ko) 1989-06-10 1989-06-10 메모리소자의 데이타 기록 방법 및 테스트 회로
KR8002/89 1989-06-10

Publications (2)

Publication Number Publication Date
CN1048463A CN1048463A (zh) 1991-01-09
CN1019243B true CN1019243B (zh) 1992-11-25

Family

ID=19286971

Family Applications (1)

Application Number Title Priority Date Filing Date
CN90104915A Expired CN1019243B (zh) 1989-06-10 1990-06-09 在测试存贮器装置时写入数据的方法和测试存贮器装置的电路

Country Status (10)

Country Link
JP (1) JP3101953B2 (enExample)
KR (1) KR920001080B1 (enExample)
CN (1) CN1019243B (enExample)
DE (1) DE4003132A1 (enExample)
FR (1) FR2648266B1 (enExample)
GB (1) GB2232496B (enExample)
IT (1) IT1248750B (enExample)
NL (1) NL194812C (enExample)
RU (1) RU2084972C1 (enExample)
SE (1) SE512452C2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100431056C (zh) * 2002-02-26 2008-11-05 Nxp股份有限公司 非易失存储器测试结构和方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05128899A (ja) * 1991-10-29 1993-05-25 Mitsubishi Electric Corp 半導体記憶装置
CN107430881B (zh) * 2015-03-09 2021-03-23 东芝存储器株式会社 半导体存储装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59185097A (ja) * 1983-04-04 1984-10-20 Oki Electric Ind Co Ltd 自己診断機能付メモリ装置
JPS62229599A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 不揮発性半導体記憶装置
DE3773773D1 (de) * 1986-06-25 1991-11-21 Nec Corp Pruefschaltung fuer eine speichereinrichtung mit willkuerlichem zugriff.
EP0263312A3 (en) * 1986-09-08 1989-04-26 Kabushiki Kaisha Toshiba Semiconductor memory device with a self-testing function
JPS6446300A (en) * 1987-08-17 1989-02-20 Nippon Telegraph & Telephone Semiconductor memory
JPH01113999A (ja) * 1987-10-28 1989-05-02 Toshiba Corp 不揮発性メモリのストレステスト回路

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100431056C (zh) * 2002-02-26 2008-11-05 Nxp股份有限公司 非易失存储器测试结构和方法

Also Published As

Publication number Publication date
KR920001080B1 (ko) 1992-02-01
SE9002030L (sv) 1990-12-11
DE4003132C2 (enExample) 1992-06-04
IT9020566A1 (it) 1991-12-07
CN1048463A (zh) 1991-01-09
NL9000261A (nl) 1991-01-02
NL194812B (nl) 2002-11-01
GB9002396D0 (en) 1990-04-04
DE4003132A1 (de) 1990-12-20
KR910001779A (ko) 1991-01-31
RU2084972C1 (ru) 1997-07-20
JP3101953B2 (ja) 2000-10-23
SE512452C2 (sv) 2000-03-20
GB2232496B (en) 1993-06-02
GB2232496A (en) 1990-12-12
IT9020566A0 (enExample) 1990-06-07
IT1248750B (it) 1995-01-27
FR2648266B1 (fr) 1993-12-24
NL194812C (nl) 2003-03-04
SE9002030D0 (sv) 1990-06-06
FR2648266A1 (fr) 1990-12-14
JPH0312100A (ja) 1991-01-21

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Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C13 Decision
GR02 Examined patent application
C14 Grant of patent or utility model
GR01 Patent grant
C15 Extension of patent right duration from 15 to 20 years for appl. with date before 31.12.1992 and still valid on 11.12.2001 (patent law change 1993)
OR01 Other related matters