CN101908566A - 太阳电池及其制造方法 - Google Patents

太阳电池及其制造方法 Download PDF

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CN101908566A
CN101908566A CN2010101964896A CN201010196489A CN101908566A CN 101908566 A CN101908566 A CN 101908566A CN 2010101964896 A CN2010101964896 A CN 2010101964896A CN 201010196489 A CN201010196489 A CN 201010196489A CN 101908566 A CN101908566 A CN 101908566A
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傅田敦
斋藤广美
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Seiko Epson Corp
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Abstract

本发明涉及太阳电池及其制造方法。提供转换效率高的太阳电池。具有基板、形成于前述基板之上的第1电极层、形成于前述第1电极层之上的半导体层、和形成于前述半导体层之上的第2电极层；在前述半导体层的一部分，设置有从前述第1电极层到达前述第2电极层的槽部，在前述槽部，形成有具有导电性的接触层。

Description

太阳电池及其制造方法
技术领域
本发明涉及太阳电池及其制造方法。
背景技术
太阳电池将光能转换为电能，根据所使用的半导体而提出各种类型的构成。近年来，制造工序简单而能够期待高的转换效率的CIGS型太阳电池备受瞩目。CIGS型太阳电池例如包括：形成于基板之上的第1电极膜、包括形成于第1电极膜之上的化合物半导体(铜-铟-镓-硒化合物)层的薄膜、和形成于该薄膜之上的第2电极膜。而且，在去除了薄膜的一部分的槽内形成第2电极膜，电连接第1电极膜与第2电极膜。(例如，参照专利文献1)。
【专利文献1】特开2002-319686号公报
可是，上述薄膜(化合物半导体层)槽通过采用激光照射和/或金属探针等去除薄膜的一部分所形成。此时，若薄膜的残渣附着于上述槽内，则因为薄膜残渣自身电阻高，所以在槽内形成第2电极膜、连接第1电极膜与第2电极膜时，存在第1电极膜与相连接的第2电极膜之间的电阻升高的问题。
发明内容
本发明用于解决上述问题的至少一部分所作出，可以作为以下的方式或应用例而实现。
(应用例1)本应用例中的太阳电池特征为：具有基板、形成于前述基板之上的第1电极层、形成于前述第1电极层之上的半导体层、和形成于前述半导体层之上的第2电极层；在前述半导体层的一部分，设置从前述第1电极层到达前述第2电极层的槽部，在前述槽部，形成具有导电性的接触层。
依照于该构成，则第1电极层与第2电极层通过形成于半导体层的槽部的接触层而电连接。从而，能够容易地确保第1电极层与第2电极层的电连接性。
(应用例2)上述应用例中的太阳电池特征为：前述接触层以电阻率比前述第1电极层及前述第2电极层低的材料所形成。
依照于该构成，则接触层因为电阻率比第1电极层及第2电极层低，所以能够降低第1电极层与第2电极层之间的电阻。
(应用例3)上述应用例中的太阳电池特征为：前述接触层由以铜为主成分的材料所形成。
依照于该构成，则因为接触层以电阻率小的材料所形成。所以能够使第1电极层与第2电极层之间低电阻化。
(应用例4)上述应用例中的太阳电池特征为：前述半导体层具有包含铜、铟、镓、硒的化合物半导体层，前述接触层通过加热处理所形成。
依照于该构成，则半导体层具有包含铜、铟、镓、硒的化合物半导体(CIGS)层，接触层是以铜为主成分的材料。在此，例如，若采用激光照射和/或金属探针等，去除化合物半导体层的一部分而形成槽部，则可认为化合物半导体层的残渣会附着于槽部内。在此，通过在槽部内采用以铜为主成分的材料通过加热处理而形成接触层，在加热处理中，能够使残渣物扩散到铜的接触层。由此，能够降低第1电极层与第2电极层之间的电阻。尤其能够降低第1电极层与接触层的界面电阻。
(应用例5)上述应用例中的太阳电池特征为：前述接触层以下述方式形成于前述槽部，该方式为：成为与前述半导体层的前述第2电极层方向的面相同的高度。
依照于该构成，则接触层与半导体层的面变成一个均匀的面。即，在半导体层与接触层的面，变成不存在台阶等的状态。从而，接触层与第2电极层因为以一平坦面所连接，所以能够使连接性提高。
(应用例6)本应用例中的太阳电池的制造方法特征为：包括在基板之上形成第1电极层的第1电极层形成工序、在前述第1电极层之上形成半导体层的半导体层形成工序、在厚度方向上去除前述半导体层的一部分而形成到达前述第1电极层的槽部的槽部形成工序、在前述槽部形成具有导电性的接触层的接触层形成工序、和在前述半导体层及前述接触层之上形成第2电极层的第2电极层形成工序。
依照于该构成，则第1电极层与第2电极层通过形成于半导体层的槽部内的接触层而电连接。从而，能够容易地确保第1电极层与第2电极层的电连接性。
附图说明
图1是表示太阳电池的构成的剖面图。
图2是表示太阳电池的制造方法的工序图。
图3是表示太阳电池的制造方法的工序图。
图4是表示变形例中的太阳电池的构成的剖面图。
符号的说明
1...太阳电池，10...基板，11...基底层，12...第1电极层，13...半导体层，13a...第1半导体层，13b...第2半导体层，14...第2电极层，17...接触层，31...第1分割槽，32...作为槽部的第2分割槽，33...第3分割槽，40...单体电池。
具体实施方式
以下，关于将本发明具体化的实施方式按照附图进行说明。还有，为了使得各附图中的各构件在各附图中成为可以辨认程度的大小，按各构件使缩小比例不同而图示。
(太阳电池的构成)
首先，关于太阳电池的构成进行说明。还有，在本实施方式中，关于CIGS型太阳电池的构成进行说明。图1是表示本实施方式中的太阳电池的构成的剖面图。
如示于图1地，太阳电池1以包括基板10、形成于基板10之上的基底层11、形成于基底层11之上的第1电极层12、形成于第1电极层12之上的半导体层13、形成于半导体层13之上的第2电极层14、和电连接第1电极层12与第2电极层14的接触层17的单体电池40的集合体所构成。
相邻的单体电池40间通过第3分割槽33所分割。并且，第1电极层12通过第1分割槽31以单体电池40为单位所分割，形成为跨相邻的单体电池40间。而且，在作为设置于半导体层13的一部分的槽部的第2分割槽32内形成接触层17，第1电极层12与第2电极层14通过接触层17相连接。而且，通过使得各单体电池40的第2电极层14与相邻的其他单体电池40的第1电极层12相连接，串联地连接各单体电池40。如此一来，通过适当设定串联连接的单体电池40的个数，可以任意地设计改变太阳电池1中的预期电压。
基板10为至少第1电极层12侧的表面具有绝缘性的基板。具体地，例如能够采用玻璃(青板玻璃等)基板、不锈钢基板、聚酰亚胺基板、云母基板等。
基底层11为形成于基板10之上的绝缘性层，例如能够设置以SiO2(氧化硅)为主成分的绝缘层和/或氟化铁层。该基底层11具有绝缘性，并兼具确保基板10与形成于基板10之上的第1电极层12的紧密附着性的功能及在基板为青板玻璃的情况下防止Na从玻璃基板10向第1电极层12扩散的功能。还有，在基板10本身具有上述特性的情况下，也能够将基底层11进行省略。
第1电极层12为形成于基底层11之上的导电性层，例如，能够采用钼(Mo)。
半导体层13以第1半导体层13a与第2半导体层13b所构成。第1半导体层13a形成于第1电极层12之上，为包含铜(Cu)、铟(In)、镓(Ga)、硒(Se)的p型半导体层(CIGS半导体层)。
第2半导体层13b形成于第1半导体层13a之上，为硫化镉(CdS)、氧化锌(ZnO)、硫化铟(InS)等的n型半导体层。
第2电极层14为形成于第2半导体层13b之上的透明性电极层，例如为AZO(掺杂铝的氧化锌)等的透明电极体(TCO：Transparent ConductingOxides，透明导电氧化物)等。
接触层17为导电性层，以电阻率比第1电极层12及第2电极层14低的材料所形成。具体地，可用铜(Cu)和/或以铜为主成分的材料。还有，此外，也能够采用金(Au)、银(Ag)、铜-锰化合物等。如此一来，通过采用电阻率低的材料，能够降低第1电极层12与第2电极层14的电阻。并且，在本实施方式中，在半导体层13形成第2分割槽32，在该第2分割槽32内形成接触层17。而且，更优选：使得接触层17形成为，成为与半导体层13的面相同的高度。如果换言之，则优选：半导体层13的顶面与接触层17的顶面形成一个平坦面，并在该平坦面之上形成第2电极层14。
若太阳光等的光入射于如上述地所构成的CIGS型太阳电池1，则在半导体层13内产生成对的电子(-)与空穴(+)，并且电子(-)与空穴(+)在p型半导体(第1半导体层13a)与n型半导体(第2半导体层13b)的接合面处，电子(-)聚集于n型半导体，空穴(+)聚集于p型半导体。其结果是，在n型半导体与p型半导体之间产生电动势。在该状态下，通过将外部导线连接于第1电极层12与第2电极层14，能够将电流提取到外部。
(太阳电池的制造方法)
接下来，关于太阳电池的制造方法进行说明。还有，在本实施方式中，关于CIGS型太阳电池的制造方法进行说明。图2及图3是表示本实施方式中的太阳电池的制造方法的工序图。
在图2(a)的基底层形成工序中，在不锈钢基板10的一方表面形成基底层11。包含氟化铁的基底层11能够通过热处理使不锈钢基板10与含氟气体起反应而形成。本基底层11确保绝缘性，并兼备提高第1电极层12与基板10间的紧密附着力的效果。还有，在基板10本身具有上述基底层效果的情况下，能够将基底层形成工序进行省略。
在图2(b)的第1电极层形成工序中，在基底层11之上形成第1电极层12。具体地，通过溅射法形成将要成为第1电极层12的钼(Mo)层。
在图2(c)的第1分割工序中，通过激光照射等去除第1电极层12的一部分，在厚度方向上对第1电极层12进行分割。在通过激光照射等去除了第1电极层12的部分，形成第1分割槽31。
在图2(d)的第1半导体层形成工序中，首先，以溅射法等使铜(Cu)、铟(In)及镓(Ga)附着于第1电极层12之上及第1分割槽31内，形成前驱体。然后，在硒化氢气氛中对该前驱体进行加热(硒化)，形成将要成为第1半导体层13a的p型半导体层(CIGS)。
在图2(e)的第2半导体层形成工序中，在第1半导体层13a之上通过CdS、ZnO和/或InS等形成将要成为第2半导体层13b的n型半导体层。第2半导体层13b能够通过溅射法等而形成。
在图3(f)的槽部形成工序(第2分割工序)中，通过激光照射和/或金属探针等，去除半导体层13的一部分，在厚度方向上对半导体层13进行分割。在通过激光照射等去除了半导体层13的部分，形成作为槽部的第2分割槽32。
在图3(g)的接触层形成工序中，在第2分割槽32内形成接触层17。当形成接触层17时，采用电阻率比第1电极层12及第2电极层14低的材料。具体地，采用以铜为主成分的材料。而且，通过印刷法和/或喷墨法等，在第2分割槽32内涂敷以铜为主成分的材料，并通过在氮或氩等惰性气体气氛下、或在使氢、蚁酸等具有还原性的成分与前述惰性气体相混合的还原性气体气氛下的热处理等进行烧制。由此，能够形成接触层17。并且，优选：接触层17形成为，成为与半导体层13的第2电极层14方向的底面相同的高度的面。在成为与半导体层13的第2电极层14方向的底面相同高度的情况下，在半导体层13与接触层17的面，成为没有台阶等的平坦面。
在图3(h)的第2电极层形成工序中，在半导体层13及接触层17之上形成第2电极层14。例如，以溅射法等形成将要成为第2电极层的AZO(掺杂Al的氧化锌)等透明电极(TCO)。
在图3(i)的第3分割工序中，通过激光照射和/或金属探针等，去除第2电极层14、半导体层13的一部分，在厚度方向上对第2电极层14及半导体层13进行分割。在通过激光照射等去除了第2电极层14及半导体层13的部分，形成第3分割槽33，从而形成一个单体电池40。
通过经由上述的工序，形成串联连接多个单体电池40的CIGS型太阳电池1。
从而，依照于上述的实施方式，则存在示于以下的效果。
(1)在作为槽部的第2分割槽32形成接触层17，并通过该接触层17连接第1电极层12与第2电极层14。接触层采用了以电效率低的铜为主成分的材料。由此，能够降低第1电极层12与第2电极层14之间的电阻。
(2)接触层17形成得与半导体层13成为同一面。由此，因为在接触层17与第2电极层14的连接面不存在台阶等，所以能够使连接性提高。
(3)在槽部形成(第2分割形成)工序之后，对第2分割槽32涂敷将会成为接触层17的铜，并通过热处理而形成接触层17。由此，在槽部形成(第2分割形成)工序中，即使第1半导体层13a(CIGS)的残渣附着于第2分割槽32，也因为通过热处理使得残渣成分扩散到铜中，所以能够使第1电极层12与接触层17的连接界面处的界面电阻降低。
还有，并非限定于上述的实施方式，可举出如以下的变形例。
(变形例1)虽然在上述实施方式中，使得半导体层13的面变得均匀地，且在第2分割槽32的内部整体形成有接触层17，但是并非限定于此。例如，既可以如示于图4(a)地形成为，接触层17的面比半导体层13的面低，也可以如示于图4(b)地形成为，接触层17的面比半导体层13的面高。进而，也可以如示于同图(c)地，在第2分割槽32的内部的一部分设置接触层17。即使如此，也能够降低第1电极层12与第2电极层14之间的电阻。
(变形例2)虽然在上述实施方式中，关于从第2电极层14侧受光的单面受光CIGS型太阳电池1的构成等进行了说明，但是也可以为除了从第2电极层14侧之外也可以从基板10侧受光的双面受光CIGS型太阳电池1。还有，该情况下，基板10采用具有透明性的基板。例如，可以是玻璃基板、PET、有机类透明基板等。并且，第1电极层12作为具有透明性的电极层，例如为AZO(掺杂Al的氧化锌)等透明电极(TCO：TransparentConducting Oxides，透明导电氧化物)层。通过采用具有透明性的基板10、且在第1电极层12采用透明电极，使得从基板10侧入射进来的光可以对第1电极层12进行透射而到达半导体层13，并用于光电转换。即使在上述双面受光的CIGS型太阳电池1中，由于通过接触层17而对第1电极层12与第2电极层14进行电连接，也能够降低电极间的串联电阻。
(变形例3)虽然在上述实施方式中，将接触层17应用于CIGS型太阳电池而进行了说明，但是并非限定于此。例如，也可以应用于薄膜硅型太阳电池中的电极连接结构。即使如此，也能够使电极间的串联电阻降低。

Claims (6)

1.一种太阳电池，其特征在于，具有：
基板，
形成于前述基板上的第1电极层，
形成于前述第1电极层上的半导体层，和
形成于前述半导体层上的第2电极层；
在前述半导体层的一部分，设置有从前述第1电极层至前述第2电极层的槽部，在前述槽部形成有具有导电性的接触层。
2.根据权利要求1所述的太阳电池，其特征在于：
前述接触层以电阻率比前述第1电极层及前述第2电极层低的材料所形成。
3.根据权利要求2所述的太阳电池，其特征在于：
前述接触层由以铜为主成分的材料所形成。
4.根据权利要求3所述的太阳电池，其特征在于：
前述半导体层具有包含铜、铟、镓、硒的化合物半导体层，前述接触层通过加热处理所形成。
5.根据权利要求1～4中的任何一项所述的太阳电池，其特征在于：
前述接触层以与前述半导体层的前述第2电极层方向的面成为相同高度的方式形成于前述槽部。
6.一种太阳电池的制造方法，其特征在于包括以下工序：
在基板上形成第1电极层的第1电极层形成工序，
在前述第1电极层上形成半导体层的半导体层形成工序，
沿厚度方向去除前述半导体层的一部分，形成到达前述第1电极层的槽部的槽部形成工序，
在前述槽部形成具有导电性的接触层的接触层形成工序，和
在前述半导体层及前述接触层上形成第2电极层的第2电极层形成工序。
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