CN101853809B - 半导体元件及其制造方法和液晶显示器及其制造方法 - Google Patents

半导体元件及其制造方法和液晶显示器及其制造方法 Download PDF

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Publication number
CN101853809B
CN101853809B CN201010167923.8A CN201010167923A CN101853809B CN 101853809 B CN101853809 B CN 101853809B CN 201010167923 A CN201010167923 A CN 201010167923A CN 101853809 B CN101853809 B CN 101853809B
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film
layer
semiconductor film
dielectric film
semiconductor
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CN101853809A (zh
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神野洋平
藤井岩
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201010167923.8A 2003-11-14 2004-11-05 半导体元件及其制造方法和液晶显示器及其制造方法 Expired - Fee Related CN101853809B (zh)

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JP2003386021 2003-11-14
JP2003-386021 2003-11-14

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CN101853809B true CN101853809B (zh) 2013-01-02

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CN200480040428.3A Expired - Fee Related CN1914737B (zh) 2003-11-14 2004-11-05 半导体元件及其制造方法和液晶显示器及其制造方法

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US (2) US8053780B2 (enExample)
JP (1) JP4667012B2 (enExample)
KR (2) KR101135063B1 (enExample)
CN (2) CN101853809B (enExample)
TW (1) TWI356496B (enExample)
WO (1) WO2005048354A1 (enExample)

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US8884845B2 (en) * 2003-10-28 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Display device and telecommunication system
WO2005048222A1 (en) * 2003-11-14 2005-05-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting display device, method for manufacturing the same, and tv set
US8053780B2 (en) 2003-11-14 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, method for manufacturing the same, liquid crystal display device, and method for manufacturing the same
WO2005048223A1 (en) * 2003-11-14 2005-05-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and method for manufacturing the same
KR20060064264A (ko) * 2004-12-08 2006-06-13 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JP4438685B2 (ja) * 2005-05-23 2010-03-24 セイコーエプソン株式会社 透明導電膜とその形成方法、電気光学装置、及び電子機器
JP2006330418A (ja) * 2005-05-27 2006-12-07 Seiko Epson Corp 画素電極とその形成方法、電気光学装置、及び電子機器
US7745989B2 (en) * 2005-06-30 2010-06-29 Semiconductor Energy Laboratory Co., Ltd Light emitting element, light emitting device, and electronic apparatus
US7655566B2 (en) * 2005-07-27 2010-02-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4670596B2 (ja) 2005-11-04 2011-04-13 セイコーエプソン株式会社 膜パターン形成方法、デバイス、電気光学装置、及び電子機器
JP4907155B2 (ja) * 2005-11-17 2012-03-28 株式会社 日立ディスプレイズ 表示装置の製造方法
US8937013B2 (en) * 2006-10-17 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor
KR100975204B1 (ko) * 2008-08-04 2010-08-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
WO2011002046A1 (en) * 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20120090972A (ko) 2009-09-24 2012-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011043163A1 (en) 2009-10-05 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN102668096B (zh) 2009-10-30 2015-04-29 株式会社半导体能源研究所 半导体装置及其制造方法
WO2012117439A1 (ja) 2011-02-28 2012-09-07 パナソニック株式会社 薄膜半導体装置及びその製造方法
CN102736764B (zh) * 2011-04-04 2015-08-12 宸鸿科技(厦门)有限公司 触控面板及其制造方法
JP2012248743A (ja) * 2011-05-30 2012-12-13 Japan Display West Co Ltd 半導体装置およびその製造方法、表示装置ならびに電子機器
KR101968664B1 (ko) * 2012-08-06 2019-08-14 삼성디스플레이 주식회사 박막 형성 장치 및 이를 이용한 유기 발광 표시 장치의 제조 방법
KR20140090019A (ko) * 2013-01-08 2014-07-16 삼성디스플레이 주식회사 표시 장치
US9376332B2 (en) * 2013-03-15 2016-06-28 Nitto Denko Corporation Multivalence photocatalytic semiconductor elements
KR102220450B1 (ko) * 2013-12-02 2021-02-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
CN105304639B (zh) * 2015-09-22 2018-09-18 昆山龙腾光电有限公司 薄膜晶体管阵列基板的制作方法
WO2018105520A1 (ja) * 2016-12-08 2018-06-14 シャープ株式会社 Ｔｆｔ基板、ｔｆｔ基板を備えた走査アンテナ、およびｔｆｔ基板の製造方法
CN111129037B (zh) 2019-12-25 2022-09-09 Tcl华星光电技术有限公司 Tft阵列基板及其制作方法

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Publication number Publication date
CN1914737A (zh) 2007-02-14
KR101135063B1 (ko) 2012-04-13
KR101152201B1 (ko) 2012-06-15
CN1914737B (zh) 2010-06-16
KR20120003977A (ko) 2012-01-11
KR20070001891A (ko) 2007-01-04
CN101853809A (zh) 2010-10-06
WO2005048354A1 (en) 2005-05-26
US8518728B2 (en) 2013-08-27
JP2005167228A (ja) 2005-06-23
JP4667012B2 (ja) 2011-04-06
US20070131976A1 (en) 2007-06-14
US20110097830A1 (en) 2011-04-28
TW200522367A (en) 2005-07-01
TWI356496B (en) 2012-01-11
US8053780B2 (en) 2011-11-08

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