CN101847640A - 阵列基板及其制造方法和液晶面板 - Google Patents
阵列基板及其制造方法和液晶面板 Download PDFInfo
- Publication number
- CN101847640A CN101847640A CN200910080900A CN200910080900A CN101847640A CN 101847640 A CN101847640 A CN 101847640A CN 200910080900 A CN200910080900 A CN 200910080900A CN 200910080900 A CN200910080900 A CN 200910080900A CN 101847640 A CN101847640 A CN 101847640A
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- CN
- China
- Prior art keywords
- data scanning
- scanning line
- electrode
- insulating barrier
- underlay substrate
- Prior art date
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- Granted
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- 239000000758 substrate Substances 0.000 title claims abstract description 106
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims description 117
- 230000004888 barrier function Effects 0.000 claims description 91
- 239000002184 metal Substances 0.000 claims description 67
- 229910052751 metal Inorganic materials 0.000 claims description 67
- 238000005516 engineering process Methods 0.000 claims description 51
- 238000005530 etching Methods 0.000 claims description 49
- 239000000203 mixture Substances 0.000 claims description 48
- 238000000151 deposition Methods 0.000 claims description 47
- 238000002161 passivation Methods 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 41
- 239000012212 insulator Substances 0.000 claims description 40
- 230000008021 deposition Effects 0.000 claims description 34
- 239000011159 matrix material Substances 0.000 claims description 25
- 239000004020 conductor Substances 0.000 claims description 20
- 239000012528 membrane Substances 0.000 claims description 15
- 230000000694 effects Effects 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 36
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical class [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/40—Arrangements for improving the aperture ratio
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (12)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100809000A CN101847640B (zh) | 2009-03-27 | 2009-03-27 | 阵列基板及其制造方法和液晶面板 |
US12/732,884 US20100245735A1 (en) | 2009-03-27 | 2010-03-26 | Array substrate and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100809000A CN101847640B (zh) | 2009-03-27 | 2009-03-27 | 阵列基板及其制造方法和液晶面板 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101847640A true CN101847640A (zh) | 2010-09-29 |
CN101847640B CN101847640B (zh) | 2011-12-28 |
Family
ID=42772177
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009100809000A Active CN101847640B (zh) | 2009-03-27 | 2009-03-27 | 阵列基板及其制造方法和液晶面板 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20100245735A1 (zh) |
CN (1) | CN101847640B (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103035636A (zh) * | 2011-09-28 | 2013-04-10 | 元太科技工业股份有限公司 | 阵列基板及使用该阵列基板的显示设备 |
CN103217846A (zh) * | 2013-04-23 | 2013-07-24 | 京东方科技集团股份有限公司 | 阵列基板及显示装置 |
CN103439844A (zh) * | 2013-08-30 | 2013-12-11 | 京东方科技集团股份有限公司 | 阵列基板、显示装置及制作阵列基板的方法 |
CN103513483A (zh) * | 2013-10-28 | 2014-01-15 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和显示装置 |
CN107403810A (zh) * | 2017-07-21 | 2017-11-28 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法和显示装置 |
CN108287442A (zh) * | 2018-02-06 | 2018-07-17 | 重庆京东方光电科技有限公司 | 阵列基板的修复方法和阵列基板 |
CN109491156A (zh) * | 2017-09-13 | 2019-03-19 | 乐金显示有限公司 | 阵列基板及包括该阵列基板的显示装置 |
CN114326235A (zh) * | 2022-01-06 | 2022-04-12 | Tcl华星光电技术有限公司 | 阵列基板及液晶显示面板 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101925983B1 (ko) * | 2011-12-14 | 2018-12-07 | 엘지디스플레이 주식회사 | 액정표시소자 및 그 제조방법 |
TWI483036B (zh) | 2012-11-19 | 2015-05-01 | Au Optronics Corp | 陣列基板及其製作方法 |
KR102138280B1 (ko) * | 2013-04-30 | 2020-07-28 | 삼성디스플레이 주식회사 | 표시 패널 및 이를 구비하는 표시 장치 |
KR102576428B1 (ko) | 2016-04-29 | 2023-09-08 | 삼성디스플레이 주식회사 | 어레이 기판, 이를 포함하는 액정 표시 장치 및 어레이 기판의 제조 방법 |
CN117116147A (zh) * | 2019-11-04 | 2023-11-24 | 群创光电股份有限公司 | 电子装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR920008675Y1 (ko) * | 1989-12-30 | 1992-12-12 | 삼성전자 주식회사 | 평판 디스플레이용 박막 트랜지스터 |
KR20070071012A (ko) * | 2005-12-29 | 2007-07-04 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 어레이 기판 이의 제조 방법 |
KR100875100B1 (ko) * | 2007-06-05 | 2008-12-19 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 |
KR101475297B1 (ko) * | 2008-03-25 | 2014-12-23 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판, 액정 표시 장치, 및 액정 표시장치의 제조 방법 |
-
2009
- 2009-03-27 CN CN2009100809000A patent/CN101847640B/zh active Active
-
2010
- 2010-03-26 US US12/732,884 patent/US20100245735A1/en not_active Abandoned
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103035636B (zh) * | 2011-09-28 | 2016-07-06 | 元太科技工业股份有限公司 | 阵列基板及使用该阵列基板的显示设备 |
CN103035636A (zh) * | 2011-09-28 | 2013-04-10 | 元太科技工业股份有限公司 | 阵列基板及使用该阵列基板的显示设备 |
CN103217846B (zh) * | 2013-04-23 | 2015-12-02 | 京东方科技集团股份有限公司 | 阵列基板及显示装置 |
CN103217846A (zh) * | 2013-04-23 | 2013-07-24 | 京东方科技集团股份有限公司 | 阵列基板及显示装置 |
US9385144B2 (en) | 2013-04-23 | 2016-07-05 | Boe Technology Group Co., Ltd. | Array substrate and display device |
WO2014172966A1 (zh) * | 2013-04-23 | 2014-10-30 | 京东方科技集团股份有限公司 | 阵列基板及显示装置 |
WO2015027619A1 (zh) * | 2013-08-30 | 2015-03-05 | 京东方科技集团股份有限公司 | 阵列基板、显示装置及制作阵列基板的方法 |
CN103439844B (zh) * | 2013-08-30 | 2016-06-01 | 京东方科技集团股份有限公司 | 阵列基板、显示装置及制作阵列基板的方法 |
CN103439844A (zh) * | 2013-08-30 | 2013-12-11 | 京东方科技集团股份有限公司 | 阵列基板、显示装置及制作阵列基板的方法 |
WO2015062323A1 (zh) * | 2013-10-28 | 2015-05-07 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和显示装置 |
CN103513483B (zh) * | 2013-10-28 | 2016-05-25 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和显示装置 |
CN103513483A (zh) * | 2013-10-28 | 2014-01-15 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和显示装置 |
US9647002B2 (en) | 2013-10-28 | 2017-05-09 | Boe Technology Group Co., Ltd. | Array substrate, manufacture method thereof, and display device with the array substrate |
CN107403810A (zh) * | 2017-07-21 | 2017-11-28 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法和显示装置 |
US11133334B2 (en) | 2017-07-21 | 2021-09-28 | Boe Technology Group Co., Ltd. | Array substrate with stacked gate lines, manufacturing method thereof, and display device with stacked gate lines |
CN109491156A (zh) * | 2017-09-13 | 2019-03-19 | 乐金显示有限公司 | 阵列基板及包括该阵列基板的显示装置 |
CN108287442A (zh) * | 2018-02-06 | 2018-07-17 | 重庆京东方光电科技有限公司 | 阵列基板的修复方法和阵列基板 |
CN108287442B (zh) * | 2018-02-06 | 2021-11-16 | 重庆京东方光电科技有限公司 | 阵列基板的修复方法和阵列基板 |
CN114326235A (zh) * | 2022-01-06 | 2022-04-12 | Tcl华星光电技术有限公司 | 阵列基板及液晶显示面板 |
CN114326235B (zh) * | 2022-01-06 | 2023-12-12 | Tcl华星光电技术有限公司 | 阵列基板及液晶显示面板 |
Also Published As
Publication number | Publication date |
---|---|
US20100245735A1 (en) | 2010-09-30 |
CN101847640B (zh) | 2011-12-28 |
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ASS | Succession or assignment of patent right |
Owner name: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY Effective date: 20141204 Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20141204 |
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Free format text: CORRECT: ADDRESS; FROM: 100176 DAXING, BEIJING TO: 100015 CHAOYANG, BEIJING |
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Effective date of registration: 20141204 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE Technology Group Co., Ltd. Patentee after: Beijing BOE Photoelectricity Science & Technology Co., Ltd. Address before: 100176 Beijing economic and Technological Development Zone, West Central Road, No. 8 Patentee before: Beijing BOE Photoelectricity Science & Technology Co., Ltd. |