CN101814441A - 用于制造半导体部件的方法及其结构 - Google Patents

用于制造半导体部件的方法及其结构 Download PDF

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CN101814441A
CN101814441A CN201010004660A CN201010004660A CN101814441A CN 101814441 A CN101814441 A CN 101814441A CN 201010004660 A CN201010004660 A CN 201010004660A CN 201010004660 A CN201010004660 A CN 201010004660A CN 101814441 A CN101814441 A CN 101814441A
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leadframe leads
interconnection structure
lead frame
leadframe
electric interconnection
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CN101814441B (zh
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P·塞拉亚
小J·P·莱特曼
R·L·马奎斯
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Semiconductor Components Industries LLC
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Abstract

本发明涉及用于制造半导体部件的方法及其结构。提供一种具有可弄湿的引线框架引线表面的半导体部件和制造方法。具有引线框架引线的引线框架嵌入模制料中。至少一个引线框架引线的一部分暴露，而导电材料在暴露部分上形成。分离模制料，以形成单一化的半导体部件。

Description

用于制造半导体部件的方法及其结构
技术领域
本发明一般涉及半导体部件，并更具体涉及半导体部件支撑结构。
背景技术
半导体器件典型地由半导体晶片制造。晶片被切成块，以便形成安装到例如引线框架的衬底的芯片或晶粒。然后引线框架放在模子中，并且引线框架的一部分包封在模制料(mold compound)中，然而引线框架的另一部分保持不包封。引线框架引线镀有锡，并被切割以将衬底分离成单独的半导体部件。这个方案的缺点是切割引线框架引线将会留下引线框架材料的暴露部分。在表面安装工艺期间，暴露部分可能不是湿的，这导致在极端大气条件期间的腐蚀蠕变，例如汽车发动机舱中发生的那些腐蚀蠕变。此外，引线框架的暴露部分可形成不可靠的焊料接头。
因此，具有一种具有改进了可湿性的引线框架引线的半导体部件和用于制造这样的半导体部件的方法是有利的。能成本有效地制造半导体部件将是更为有利的。
附图说明
阅读以下详细描述，结合附图图形，将更好理解本发明，其中同样的参考字符指定同样的元件，其中：
图1是依照本发明的实施方式，在制造期间，半导体部件的等轴测视图；
图2是在制造的较晚阶段，图1的半导体部件的等轴测视图；
图3是沿图2的剖面线3-3截取的图2的半导体部件的剖面图；
图4是依照本发明的另一实施方式，在制造期间，多个半导体部件的俯视图；
图5是在制造的较晚阶段，图4的多个半导体部件的仰视图；
图6是在制造的较晚阶段，沿剖面线6-6截取的图5的多个半导体部件的剖面图；
图7是在制造的较晚阶段，图6的多个半导体部件的剖面图；
图8是在制造的较晚阶段，图7的多个半导体部件的剖面图；
图9是在制造的较晚阶段，图8的多个半导体部件的侧视图；
图10是依照本发明的另一实施方式，在制造期间，多个半导体部件的俯视图；
图11是在制造的较晚阶段，沿剖面线11-11截取的图10的多个半导体部件的剖面图；
图12是在制造的较晚阶段，图11的多个半导体部件的剖面图；
图13是在制造的较晚阶段，图12的多个半导体部件的剖面图；
图14是在制造的较晚阶段，图13的多个半导体部件的剖面图；
图15是依照本发明的另一实施方式，在制造期间，多个半导体部件的俯视图；
图16是在制造的较晚阶段，图15的多个半导体部件的仰视图；
图17是在制造的较晚阶段，沿剖面线17-17截取的图16的多个半导体部件的剖面图；
图18是在制造的较晚阶段，图17的多个半导体部件的剖面图；
图19是在制造的较晚阶段，图18的多个半导体部件的剖面图；
图20是在制造的较晚阶段，图19的多个半导体部件的侧视图；以及
图21是依照本发明的另一实施方式，半导体部件的剖面图。
具体实施方式
图1是依照本发明的实施方式，半导体部件10在制造期间的等轴测视图。在图1中显示的是引线框架16的部分嵌入模制料18中的引线框架引线12和引线框架扁平板(leadframe flag)14，模制料18具有侧面20和21以及边缘或侧表面22。引线框架引线12和引线框架扁平板14从侧面20突出或伸出。优选地，引线框架16是铜。然而，这不是本发明的限制。引线框架16的其他合适材料包括铜合金、钢、铁或之类的。引线框架引线12被显示为具有侧表面24和末端表面26和28的矩形立方体。引线框架扁平板14是具有侧表面30、末端表面32和从末端表面32伸出的延伸部分34的矩形立方体。引线框架扁平板和引线框架引线的形状不限于具有矩形立方体的形状。引线框架扁平板和引线框架引线的其他形状包括圆形、椭圆形、正方形、三角形、五边形或任何其他几何形状。延伸部分34具有末端表面38。导电材料层40在引线框架引线12和扁平板14上形成。导电材料40可以是锡、铅、焊料、锡和铅的组合或之类的。引线框架引线12的末端表面26和延伸部分34的末端表面38上没有导电材料40。因此，末端表面26和38是引线框架引线12的暴露区域。当引线框架16是铜时，末端表面26和38是铜的暴露区域。作为实施例，当半导体部件10从引线框架条(未显示)分离或单一化(singulate)时，末端表面26和38暴露。
现在参考图2，导电材料42使用例如滚镀工艺在导电层40和末端表面26和38上形成。层40和42进一步在图3示出。依照实施方式，导电层42的材料是锡。导电层42的材料不是本发明的限制。导电层42的其他合适材料包括铅；焊料；锡和铅的组合；银；镍；镍、铅和金的组合或之类的。类似地，形成导电层42的方法不是本发明的限制。形成导电层42的其他合适方法包括电镀、化学镀、波峰焊、热浸焊、气相沉积、溅射沉积或之类的。导电材料层42可覆盖或部分覆盖表面26和38。形成导电材料层42的优点是在表面26和38上形成可弄湿的材料(wetable material)。
图3是沿图2的剖面线3-3截取的半导体部件10的剖面图。图3进一步示出引线框架引线12、扁平板14和导电层40与42。为了完整，半导体芯片62显示为通过晶粒连接材料63安装到引线框架扁平板14。
图4是导电支架51的一部分的俯视图，其具有器件或部件接收区52、互连结构54、结构支撑构件56、56A和57，以及用在半导体部件50(在图9显示)的制造中的相对侧面58和60(相反的侧面60在图5示出)。互连结构54也被称为电互连结构或导电互连结构。应注意，使用术语俯视图是为了清楚，并区别一个或更多个有源电路元件或一个或更多个无源电路元件所安装到的导电支架51的侧面。依照实施方式，导电支架51是引线框架，互连结构52是扁平板，互连结构54是引线框架引线，支撑构件56和56A是系杆(tie bar)，而支撑构件57是轨道。作为实施例，半导体芯片或晶粒62通过晶粒连接材料63(图6显示)耦合到引线框架51的侧面58。更具体地，半导体芯片62通过晶粒连接材料安装到每个扁平板52。半导体芯片62具有通过接合线68耦合到相应的引线框架引线54的接合垫66。接合线也被称为引线接合。扁平板和引线框架引线的数量和它们的形状不是本发明的限制。虽然已经将半导体芯片62描述为安装到扁平板52，但是实施方式不限于这个方面。无源电路元件例如电阻器、感应器和电容器，以及有源电路元件例如包括晶体管的半导体芯片可耦合到或安装到代替半导体芯片62或除了半导体芯片62之外的引线框架51上。
现在参考图5，显示了模制料70已经在半导体芯片62和引线接合68上形成以形成模制的引线框架条(molded leadframe strip)72之后，引线框架51的一部分的俯视图。应理解，模制料70在侧面58上形成，也就是在顶侧上形成，从而留下侧面60实质上没有模制料，且图5是引线框架51的仰视图。应进一步理解，提到图中显示的视图为俯视图和仰视图以及指定一视图为俯视图或仰视图仅仅是为了帮助描述本发明的实施方式。虚线79指示将要分离和暴露的引线框架引线54的部分。虚线79还指示其中移除系杆56的区域。分离和暴露引线框架引线54以及移除系杆56将参考图7进一步描述。
图6是沿图5的剖面线6-6截取的模制的引线框架条72的剖面图。图6示出引线框架扁平板52、引线框架引线54、晶粒连接材料63和半导体芯片62的部分。
图7是在制造的较晚阶段，图6显示的模制的引线框架条72的剖面图。图7显示的是部分已经被移除之后的引线框架51。更具体地，移除引线框架引线54和系杆56的部分以形成具有侧壁78的腔76。作为实施例，通过部分锯到引线框架引线54和系杆56中来移除引线框架引线54和系杆的部分。优选地，移除的引线框架引线54和系杆56的厚度范围是引线框架引线54和系杆56的厚度的大约50％到大约100％。然而，移除的引线框架引线54和系杆56的厚度可小于它们的厚度的50％并等于或大于100％。依照实施方式，移除了引线框架引线54和系杆56的厚度的大约四分之三。移除引线框架引线54的部分的合适技术包括锯切、切割、蚀刻、冲压、冲孔或之类的。移除引线框架引线54和系杆56的部分的区域在图5显示，并由虚线79识别。
现在参考图8，具有从大约0.5微英寸(12.7纳米)到大约3000微英寸(76.2纳米)厚度范围的导电材料层80在引线框架引线54上形成，包括引线框架引线54的在腔76中的部分。依照实施方式，导电材料80是通过电镀工艺形成的锡。导电材料的类型和用于形成导电材料的方法不是本发明的限制。导电层80的其他合适材料包括银；镍；镍、铅和金的组合或之类的。类似地，形成导电层80的方法不是本发明的限制。形成导电层80的其他合适方法包括电镀、化学镀、波峰焊、热浸焊、气相沉积、溅射沉积或之类的。
虽然导电层80的材料的实施例是金属，但是这不是本发明的限制。例如，层80可以是导电环氧树脂。可选地，抗氧化涂层或抗氧化剂可在引线框架引线54和引线框架引线54的暴露部分上形成。这些类型的涂层是在室温下抑制金属例如铜氧化的不导电材料。在引线框架引线54上形成焊料期间，抗氧化涂层蒸发，从而允许焊料在引线框架引线54的暴露部分上形成。在抗氧化涂层蒸发后，其留下可粘附焊料的干净的可弄湿的铜表面。
现在参考图9，移除引线框架引线54和系杆56的留在腔76中的部分，从而暴露引线框架引线54的侧壁部分82和模制料70的部分，并将模制的引线框架条72单一化成单独的半导体部件50。在使用锯切工艺形成腔76和使用锯切工艺单一化模制的引线框架条72的实施方式中，优选地，用来单一化模制的引线框架条72的锯条的宽度小于用来形成腔76的锯条的宽度。导电层80的剩余部分在引线框架引线54的表面的部分上提供可弄湿的材料。
图10是具有扁平板52、引线框架引线54、系杆56和56A以及相对侧面58和60的引线框架51的俯视图。引线框架引线54包括引线框架引线54A-1、54B-1、54A-2、54B-2、54A-3、54B-3、54A-4和54B-4，其中引线框架引线54A-1和54B-1在系杆56的直接相对侧，引线框架引线54A-2和54B-2在系杆56的直接相对侧，引线框架引线54A-3和54B-3在系杆56的直接相对侧，而引线框架引线54A-4和54B-4在系杆56的直接相对侧。半导体芯片或晶粒62通过晶粒连接材料63耦合到引线框架51的侧面58。更具体地，半导体芯片62通过晶粒连接材料63安装到每个扁平板52。半导体芯片62具有通过接合线68耦合到相应引线框架引线54的接合垫66。接合线也被称为引线接合。每个引线框架的扁平板52和引线框架引线54的数量不是本发明的限制。
形成引线接合100-1、100-2、100-3和100-4，以使引线框架引线54A-1、54A-2、54A-3和54A-4分别与引线框架引线54B-1、54B-2、54B-3和54B-4电耦合。形成引线接合102，以使引线框架引线54A-1、54A-2、54A-3和54A-4彼此电耦合，并形成引线接合104，以使引线框架引线54A-1、54A-2、54A-3、54A-4、54B-1、54B-2、54B-3和54B-4电耦合到至少一个轨道57。可选地，可形成引线接合102，以使引线框架引线54B-1、54B-2、54B-3和54B-4彼此电耦合。在电镀工艺期间，引线接合100-1、100-2、100-3、100-4、102和104形成引线框架引线54和轨道57之间的电连接。使用引线接合来电连接引线框架引线54、系杆56和轨道57不是本发明的限制。例如，导电夹可用来电连接引线框架引线54、系杆和轨道57。
像半导体部件10和50，模制料70(在图11-14显示)在半导体芯片62和引线接合68、100-1、100-2、100-3、100-4、102以及104上形成，以形成类似模制的引线框架条72的模制的引线框架条72A(图11-13显示)。应注意，半导体部件150的模制的引线框架条的仰视图类似图5所示的模制的引线框架条72的仰视图。模制的引线框架条的仰视图类似图5所示的仰视图。如以上描述的，提到图中所示的视图为俯视图和仰视图，以及指定一视图是俯视图或仰视图仅仅是帮助描述本发明的实施方式。
图11是沿图10的剖面线11-11显示的区域截取的模制的引线框架条72A的剖面图，但是在晚于图10所示的步骤。图11示出了引线框架扁平板52、引线框架引线54、晶粒连接材料63、半导体芯片62和引线接合100-3的部分。
图12是图11所示的模制的引线框架条72A的剖面图，但是在晚于图11所示的模制的引线框架条的制造阶段。图12显示的是已经移除引线框架51和模制料70的部分之后的模制的引线框架条72A。更具体地，移除引线框架引线54和模制料70的部分以形成具有侧壁78A的腔76A。作为实施例，引线框架引线54的部分通过锯到引线框架引线54、系杆56和模制料70中来移除。移除引线框架引线54、系杆56和模制料70的方法不是本发明的限制。移除引线框架引线54的部分的其他合适技术包括锯切、切割、刻蚀、冲压、冲孔或之类的。移除引线框架引线54、系杆56和轨道57的部分的区域通过图10所示的虚线79识别。
现在参考图13，具有从大约0.5微英寸(12.7纳米)到大约3000微英寸(76.2纳米)厚度范围的导电材料层80在引线框架引线54上形成，包括引线框架引线54的在腔76A中的部分。依照实施方式，导电材料80是由电镀工艺形成的锡。导电材料的类型和用于形成导电材料的方法不是本发明的限制。导电层80的其他合适材料包括银；镍；镍、铅和金的组合或之类的。类似地，用于形成导电层80的方法不是本发明的限制。用于形成导电层80的其他合适方法包括电镀、化学镀、波峰焊、热浸焊、气相沉积、溅射沉积或之类的。
如以上讨论的，导电层80不限于金属，但是能够是在引线框架引线54和引线框架引线54的暴露部分上形成的导电环氧树脂或抗氧化涂层或抗氧化剂。这些类型的涂层是在室温下抑制金属例如铜氧化的不导电材料。在引线框架引线54上形成焊料期间，抗氧化涂层蒸发，从而允许焊料在引线框架引线54的暴露部分上形成。在抗氧化涂层蒸发后，其留下可粘附焊料的干净的可弄湿的铜表面。
现在参考图14，移除引线框架引线54和系杆56的留在腔76A中的部分和模制料70的部分，以由模制料70形成侧壁，并将模制的引线框架条72A单一化成单独的半导体部件150，也就是通过移除引线框架引线54和系杆56的部分而暴露的模制料70的部分被移除，以将模制的引线框架条72A单一化成单独的半导体部件150。此外，引线接合100-1、100-2、100-3、100-4、102和104被切割、打开或分离。应注意，在使用锯切或切割工艺来打开引线接合102和104的实施方式中，在实质上垂直引线接合100-1、100-2、100-3、100-4的方向切割引线接合102和104。导电层80的剩余部分在引线框架引线54的表面上提供可弄湿的材料。
图15是具有扁平板52、引线框架引线54、系杆56和56A、轨道57以及用在半导体部件200(图20显示)的制造中的相对侧面58和60(相反的侧面60在图16中示出)的引线框架51A的部分的俯视图。引线框架51A类似参考图4描述的引线框架51，除了凹坑(dimple)152在系杆56中形成。因为这个差异，附加了参考字符“A”来引用字符51。凹坑152可通过冲压引线框架51A的系杆来形成。凹坑152的位置由图14的虚线154示出。凹坑152在图17-20显示。半导体芯片或晶粒62耦合到引线框架51A的侧面58，而接合垫66通过接合线68耦合到相应的引线框架引线54，如参考图4描述的。可选地并参考图3讨论的，无源电路元件例如电阻器、电容器和电感器或其他有源电路元件可耦合到或安装到代替半导体芯片62或除了半导体芯片62的引线框架51A上。
现在参考图16，模制料70已经在半导体芯片62和引线接合68上形成以形成模制的引线框架条72B之后的引线框架51的部分的仰视图。虚线154指示引线框架51A中形成凹坑152的地方。应理解，模制料70在侧面58上形成，也就是在顶侧上形成，从而留下侧面60实质上没有模制料，且图16是引线框架51A的仰视图。应进一步理解，提到图中显示的视图为俯视图和仰视图，以及指定一视图是俯视图或仰视图仅仅是帮助描述本发明的实施方式。虚线79指示分离和暴露引线框架引线54的部分的地方。虚线79还指示移除系杆56的区域。分离和暴露引线框架引线54以及移除系杆56的动作将参考图18进一步描述。
模制料70在半导体芯片62和引线接合68上形成，以形成模制的引线框架条72B，如参考图5描述的。像图5，图16是模制的引线框架条72B的仰视图。凹坑152的位置由虚线154示出。如以上讨论的，凹坑152参考图17-20显示。虚线79指示分离和暴露引线框架引线54的部分或区域的地方。
图17是沿图16的剖面线17-17截取的模制的引线框架条72B的剖面图。图17示出引线框架扁平板52、引线框架引线54、晶粒连接材料63、半导体芯片62和凹坑152的部分。
图18是在制造的较晚阶段，图17显示的模制的引线框架条72B的剖面图。在图18中显示的是在已经移除引线框架51A的部分以形成具有侧壁78C的腔76C之后的模制的引线框架条72B。作为实施例，引线框架引线54的部分通过部分锯到引线框架引线54和系杆56中来移除。优选地，移除的引线框架引线54和系杆56的厚度约小于引线框架引线54的厚度的100％。依照实施方式，移除了引线框架54和系杆56的厚度的约四分之三。移除引线框架引线54的部分的合适技术包括锯切、切割、蚀刻、冲压、冲孔或之类的。移除引线框架引线54、系杆56和轨道57的部分的区域由图15和16显示的虚线79识别。
现在参考图19，具有从大约0.5微英寸(12.7纳米)到大约3000微英寸(76.2纳米)厚度范围的导电材料层80在引线框架引线54上形成，包括引线框架引线54的在腔76C中的部分。依照实施方式，导电材料80是通过电镀工艺形成的锡。导电材料的类型和用于形成导电材料的方法不是本发明的限制。导电层80的其他合适材料包括银；镍；镍、铅和金的组合或之类的。类似地，用于形成导电层80的方法不是本发明的限制。用于形成导电层80的其他合适方法包括电镀、化学镀、波峰焊、热浸焊、气相沉积、溅射沉积或之类的。
如以上讨论的，导电层80不限于金属，而能够是在引线框架引线54和引线框架引线54的暴露部分上形成的导电环氧树脂或抗氧化涂层或抗氧化剂。这些类型的涂层是在室温下抑制金属例如铜氧化的不导电材料。在引线框架引线54上形成焊料期间，抗氧化涂层蒸发，从而允许焊料在引线框架引线54的暴露部分上形成。在抗氧化涂层蒸发后，其留下可粘附焊料的干净的可弄湿的铜表面。
现在参考图20，移除引线框架引线54和系杆56的留在腔76C中的部分，从而暴露导电层80的侧壁部分、引线框架引线54的侧壁部分82A和模制料70的部分，并将模制的引线框架条72B单一化成单独的半导体部件200。在使用锯切工艺形成腔76C和使用锯切工艺单一化引线框架条72B的实施方式中，优选地，用来单一化模制的引线框架条72B的锯条的宽度小于用来形成腔76C的锯条的宽度。导电层80的剩余部分提供引线框架引线54的表面上可弄湿的材料。
现在参考图21，示出半导体部件225的剖面图。半导体部件225包括具有安装到引线框架引线232的接合垫230并被模制料70保护的半导体芯片228。材料236在单一化后暴露的引线框架引线232的边缘234上形成。材料236可以是导电材料或抗氧化材料。虽然材料236显示为覆盖所有的边缘234，但这不是本发明的限制。材料236可不覆盖边缘234的全部。应注意，半导体部件225上没有扁平板。
虽然这里已经公开了某些优选实施方式和方法，但是将对本领域技术人员明显的是，可对这些实施方式和方法做出变更和更改而不背离本发明的精神和范围。例如，导电支撑结构可以是无扁平板的结构(flagless structure)。希望本发明仅限制到随附权利要求和适用法律的条例与原则要求的程度。

Claims (10)

1.一种用于制造半导体部件的方法，包括以下步骤：
提供嵌入模制料中的一个选择性地或更多个电互连结构，所述一个或更多个电互连结构具有边缘；
暴露所述一个或更多个电互连结构中的至少一个电互连结构的边缘的一部分；
在所述边缘的暴露部分的子部分上形成第一材料；以及
将所述模制料分离成至少两部分。
2.如权利要求1所述的方法，其中，在所述至少一个电互连结构的所述边缘的暴露部分上形成第一材料的步骤包括：将第一材料电镀到所述至少一个电互连结构的所述边缘的所述暴露部分上。
3.如权利要求1所述的方法，其中，暴露所述一个或更多个电互连结构中的至少一个电互连结构的边缘的一部分的所述步骤包括从包括以下方法的组中选择的一种方法：锯切所述至少一个电互连结构、冲压所述至少一个电互连结构，以及蚀刻所述至少一个电互连结构。
4.如权利要求1所述的方法，其中，在所述边缘的暴露部分的子部分上形成第一材料的步骤包括：在所述暴露部分上形成导电材料，并在所述暴露部分上形成抗氧化涂层。
5.如权利要求1所述的方法，其中，提供嵌入模制料中的一个或更多个电互连结构的步骤包括：
提供具有系杆的引线框架，其中，第一引线框架引线和第二引线框架引线从系杆的相反侧延伸；
形成从所述第一引线框架引线到所述第二引线框架引线的引线接合；
且其中，将所述模制料分离成至少两部分的步骤包括：分离所述引线接合。
6.如权利要求1所述的方法，其中，在所述边缘的暴露部分的子部分上形成第一材料的步骤包括：在所述边缘的暴露部分的子部分上滚镀所述第一材料。
7.一种用于制造半导体部件的方法，包括以下步骤：
提供具有第一主表面和第二主表面以及多个引线框架引线的引线框架；
暴露所述多个引线框架引线中的至少一个引线框架引线的一部分；以及
在所述多个引线框架引线中的所述至少一个引线框架引线的暴露部分的至少一个子部分上形成第一导电材料层。
8.如权利要求7所述的方法，还包括以下步骤：在所述至少一个引线框架引线的所述暴露部分上形成第二导电材料层之后，暴露所述至少一个引线框架的所述一部分，且其中，暴露所述多个引线框架引线中的至少一个引线框架引线的一部分的步骤包括使用从包括以下方法的组中选择的一种方法：锯切所述引线框架、蚀刻所述引线框架、冲压所述引线框架，以及切割所述引线框架。
9.一种半导体部件，包括：
一个或更多个电互连结构，其嵌入模制料中，所述一个或更多个电互连结构具有边缘；以及
在所述一个或更多个电互连结构的至少一个边缘上的材料。
10.如权利要求9所述的半导体部件，其中，所述一个或更多个电互连结构包括引线框架，所述引线框架具有系杆，第一引线框架引线和第二引线框架引线从所述系杆的相反侧延伸，并且所述一个或更多个电互连结构还包括所述第一引线框架引线和第二引线框架引线之间的引线接合或所述系杆中的凹坑之一。
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