CN101790780A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

Info

Publication number
CN101790780A
CN101790780A CN200980100250A CN200980100250A CN101790780A CN 101790780 A CN101790780 A CN 101790780A CN 200980100250 A CN200980100250 A CN 200980100250A CN 200980100250 A CN200980100250 A CN 200980100250A CN 101790780 A CN101790780 A CN 101790780A
Authority
CN
China
Prior art keywords
knitting layer
semiconductor device
scolding tin
soldering tin
welding dish
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200980100250A
Other languages
English (en)
Inventor
松尾隆广
古泽彰男
酒谷茂昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN101790780A publication Critical patent/CN101790780A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/11—Making amorphous alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/743—Apparatus for manufacturing layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05575—Plural external layers
    • H01L2224/0558—Plural external layers being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05639—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29113—Bismuth [Bi] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3205—Shape
    • H01L2224/32057—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48739—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L2224/743—Apparatus for manufacturing layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85439—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0133—Ternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Die Bonding (AREA)

Abstract

一种半导体装置，具有：模焊盘(3)，由在表面形成第1焊锡接合层的金属构成；和半导体元件(5)，在该模焊盘(3)的第1焊锡接合层(11)上，由以铋为主成分的焊锡材料(9)固接而成。第1焊锡接合层(11)，由比焊锡材料(9)更软的材料构成；在第1焊锡接合层(11)的一部分中，形成由焊锡材料(9)被按压而成的凹陷部分(11a)，焊锡材料(9)的一部分，填充至凹陷部分(11a)。

Description

半导体装置及其制造方法
技术领域
本发明涉及一种半导体装置及其制造方法。
背景技术
在例如电视接收机等的电子设备的电源器中使用的半导体装置，一般有着具有由金属构成的模焊盘(die pad)，和该模焊盘上的由焊锡材料(はんだ材)固接而成的半导体元件(半导体芯片)的构造。
这样的半导体装置，首先，在加热过的模焊盘上配置球形的焊锡材料，将配置的焊锡材料在模焊盘上按压展开的同时令其熔化，在熔化状态的焊锡材料上按压半导体元件。之后经冷却，通过将半导体元件由焊锡材料在模焊盘上固接而得到(例如，参见专利文献1)。
现有技术文献
专利文献1：日本特开2002-156561号公报
近年来，焊锡材料的无铅化正在推进当中，但半导体装置，尤其是电源相关的半导体装置中，将模焊盘和半导体元件固接的焊锡材料没有替代材料，现在还是使用以铅为主要成分的焊锡材料，就希望能早日实现无铅化。
但是，在现有的通过锡(Sn)-银(Ag)-铜(Cu)的无铅焊锡材料将模焊盘和半导体元件固接的情况下，由于其熔点低为220℃，由半导体装置在印刷线路板上安装时的热量，焊锡材料会再次熔化，会引起熔化的焊锡材料流入半导体元件上的弱点，所以无法采用现有的无铅焊锡材料作为模焊盘和半导体元件的固接材料。
因此，虽然熔化温度高的无铅焊锡材料正在研究中，但这下由于熔化温度高，会发生模焊盘上的半导体元件的焊接不稳定的问题。
具体而言，由于焊锡材料上要安装半导体元件，即使是熔化温度高的焊锡材料，实际上半导体元件也只能加热到不会被热破坏的程度的温度，其结果是，半导体元件在模焊盘上的焊接就无法稳定进行。
发明内容
本发明目的在于解决所述现有问题，使得在模焊盘上的半导体元件的焊接能够稳定进行。
为达到所述目的，本发明中，半导体装置使用比模焊盘上形成的焊锡接合层的硬度更高的焊锡材料，在焊锡接合层形成凹陷部分，在形成的凹陷部分中填充焊锡材料的一部分而构造而成。
具体而言，本发明所涉及的半导体装置，其特征在于，具有：模焊盘，由在表面形成第1焊锡接合层的金属构成；和半导体元件，在模焊盘的第1焊锡接合层上，由以铋为主成分的焊锡材料固定。其中，第1焊锡接合层，由比焊锡材料更软的材料构成，在第1焊锡接合层的一部分中，形成了由焊锡材料被按压而成的凹陷部分，焊锡材料的一部分填充至凹陷部分。
根据本发明的半导体装置，由于模焊盘上形成的第1焊锡接合层使用了比以铋为主要成分的焊锡材料更软的材料，通过将焊锡材料按压至第1焊锡接合层，可以在第1焊锡接合层的一部分中的模焊盘一侧，形成凹陷的凹陷部分。由此，由于凹陷部分中填充有焊锡材料，就增大了模焊盘上的第1焊锡接合层和焊锡材料的接合面积。其结果，强化了模焊盘和焊锡材料之间的连接强度，稳定了模焊盘上的半导体元件的焊接。
本发明的半导体装置中，第1焊锡接合层首选为由银或以银为主要成分的金属构成。
本发明的半导体装置中，焊锡材料首选为含有铋、铜和锗。
本发明的半导体装置中，模焊盘首选为由铜或以铜为主要成分的金属构成。
本发明的半导体装置中，首选为在第1焊锡接合层的凹陷部分，形成露出模焊盘的开口部，通过形成的开口部，焊锡材料与模焊盘的表面连接。
这样的情况下，首选为焊锡材料进入开口部的外周部分的模焊盘和第1焊锡接合层之间。
本发明的半导体装置中，与半导体元件的焊锡材料相对的面上，形成第2焊锡接合层，第2焊锡接合层首选为由银或以银为主要成分的金属构成。
这样的情况下，首选为在半导体元件和第2焊锡接合层之间，从半导体元件到第2焊锡接合层，依次形成粘接层、中间接合层和阻挡层。
另外，这样的情况下，首选为粘接层由铬构成，中间接合层由镍和铬的合金构成，而阻挡层由镍构成。
本发明所涉及的半导体装置的制造方法，其特征在于包括：步骤(a)，在模焊盘的表面形成的第1焊锡接合层上，通过按压球形的焊锡材料，在第1焊锡接合层形成凹陷部分；步骤(b)，在步骤(a)之后，将焊锡材料在第1焊锡接合层上按压展开；步骤(c)，在步骤(b)之后，在按压展开的焊锡材料上按压半导体元件。
本发明的半导体装置的制造方法，首选为在步骤(a)之前，进一步包括步骤(d)，将模焊盘加热。
本发明的半导体装置的制造方法，首选为在步骤(a)中，在第1焊锡接合层形成的凹陷部分，形成露出模焊盘的开口部，通过形成的开口部，焊锡材料与模焊盘的表面接触。
根据本发明所涉及的半导体装置及其制造方法，由于增大了模焊盘上形成的第1焊锡接合层和焊锡材料的接合面积，就强化了模焊盘和焊锡材料之间的连接强度，所以稳定了模焊盘上的半导体元件的焊接。
附图说明
图1是表示本发明的一具体实施方式所涉及的半导体装置的斜视图。
图2是表示本发明的一具体实施方式所涉及的半导体装置的平面图。
图3是图2的III-III线的截面图。
图4是表示图3的区域IV的部分放大截面图。
图5是表示本发明的一具体实施方式所涉及的半导体装置的制造方法的一个步骤的截面图。
图6是表示本发明的一具体实施方式所涉及的半导体装置的制造方法的一个步骤的截面图。
图7是表示图6的区域VII的部分放大截面图。
图8是继图7表示图6的区域VII的部分放大截面图。
图9是表示本发明的一具体实施方式所涉及的半导体装置的制造方法的一个步骤的截面图。
图10是表示本发明的一具体实施方式所涉及的半导体装置的制造方法的一个步骤的截面图。
图11是表示本发明的一具体实施方式所涉及的半导体装置的制造方法的一个步骤的截面图。
图中：
1外部引线
2内部引线
3模焊盘
4散热部
4a螺丝孔
5半导体元件
6电极
7电线
8密封树脂部
9焊锡材料
9A焊锡材料(球形的焊锡材料)
9a扩散浮动(拡散フロ一ト)
10活性层
11第1焊锡接合层
11a凹陷部分
11b孔(开口部)
12粘接层
13中间接合层
14阻挡层
15第2焊锡接合层
16背面电极(back contact)
17加热器(heat block)
18压针(押えピン)
具体实施方式
(一具体实施方式)
利用附图对本发明的一个具体实施方式进行说明。
图1是本发明的一具体实施方式所涉及的半导体装置，表示的是例如电视接收机的电源器所使用的半导体装置。另外，图2表示的是省略密封树脂部的平面构造。电源器所使用的半导体装置，流过数十安培至上百安培左右的电流。为防止伴随该电流的发热造成的对半导体元件的破坏，如图1和图2所示，使用厚度很厚的铜(Cu)构成的、且形成有多个外部引线1、多个内部引线2、模焊盘3和散热部4的引线框架(lead frame)。散热部4在模焊盘3的与外部引线1相对的一侧形成为一体。另外，外部引线1和内部引线2各自形成为一体，且多个外部引线1和多个内部引线2的其中之一，与模焊盘3形成为一体。
如图2所示，模焊盘3上安装有半导体元件(半导体芯片)5，半导体元件5上形成的电极6和与模焊盘3不相连接的内部引线2之间，由例如铝(Al)构成的电线而电连接。
半导体元件5、电线7、内部引线2和模焊盘3，由密封树脂部8(图2中省略)所覆盖。
此外，散热部4中形成了螺丝孔4a，如果该螺丝孔4a由螺丝与电源器的散热装置(图中未示)相固接的话，就可以通过模焊盘3、散热部4和螺丝，使得散热装置将半导体元件5的发热释放。
如图3所示，半导体元件5由焊锡材料9与模焊盘3固接。具体而言，如图4所示，在模焊盘3的表面上，由真空镀敷法或是喷溅法等，就能设置例如由厚度为0.1μm～0.4μm左右的铜所构成的活性层10。本具体实施方式中，将模焊盘3包括由铜构成的活性层10来处理。此外，包括外部引线1和内部引线2的模焊盘3中虽然使用了铜，但不局限于铜，也可以是除了铜以外的含有银(Ag)或是钴(Co)的合金。
活性层10之上，设有由镀金形成的厚度为1μm～4μm左右的银(Ag)构成的第1焊锡接合层11，半导体装置制造时，对模焊盘3、活性层10和第1焊锡接合层11的3层结构进行处理。
半导体元件5的下部，是由例如硅(Si)构成的半导体衬底，该半导体衬底的下面，由真空镀敷法或是喷溅法，依次形成厚度为0.05μm左右的铬(Cr)所构成的粘接层12、厚度为0.05μm左右的镍(Ni)-铬(Cr)合金所构成的中间接合层13、和厚度为0.3μm左右的镍(Ni)所构成的阻挡层14。该阻挡层14的下面，由真空镀敷法或是喷溅法，形成由银构成的、厚度为0.5μm～5μm左右的第2焊锡接合层15。也就是说，由这些粘接层12、中间接合层13、阻挡层14和第2焊锡接合层15，就形成了半导体元件5的背面电极16。
此外，第1焊锡接合层11和第2焊锡接合层15中使用了银，但不局限于银，也可以是除了银以外的含有钴(Co)或是铜(Cu)的合金。
另外，粘接层12也可以是以铬为主要成分的合金，中间接合层13也可以是以镍-铬合金为主要成分的合金，阻挡层14也可以是以镍为主要成分的合金。
具有如上所述构造的模焊盘3和半导体元件5中，焊锡材料9介于模焊盘3上的第1焊锡接合层11，和构成半导体元件5的背面电极16的第2焊锡接合层15之间，通过该焊锡材料9，半导体元件5在模焊盘3上被安装并固接。此外，图4中所示符号9为，表示同时来自由银构成的第1焊锡接合层11和第2焊锡接合层15的、在焊锡材料9的内部扩散的银的扩散浮动。
如图4所示，本具体实施方式中，由于将焊锡材料9的硬度设定为高于第1焊锡接合层11，在制造时第1焊锡接合层11中，形成了由焊锡材料9按压而成的凹陷部分11a。进一步地，在凹陷部分11a的下部，形成了露出其下侧的活性层10，也就是说模焊盘3的孔11b。由此，焊锡材料9的下部的一部分，填充了凹陷部分11a，同时焊锡材料9还进入了孔11b的外周部分的模焊盘3和第1焊锡接合层11之间。
如此，本具体实施方式所涉及的半导体装置，由于凹陷部分11a中填充有焊锡材料9，就增大了模焊盘3上的第1焊锡接合层11和焊锡材料9的接合面积，强化了第1焊锡接合层11和焊锡材料9的连接强度，其结果，稳定了模焊盘3上的半导体元件5的焊接。
以下参照附图，对所述构造的半导体装置的制造方法进行说明。
图5～图11表示了本发明第1具体实施方式所涉及的半导体装置的制造方法的工序的截面构造。
首先，如图5所示，将预先在表面形成了活性层10(图中未示)和第1焊锡接合层11的模焊盘3在加热器17上配置。之后，在还原环境，例如新鲜气体(green gas：氮气(N2)和氢气(H2)的混合气体)，或是非氧化环境，例如氮气(N2)的环境下，加热至大约310℃。
接下来，如图6所示，在还原环境或是非氧化环境中加热的模焊盘3的焊锡接合层11上，按压球形的焊锡材料9A。焊锡材料9A由以铋(Bi)为主要成分、铜(Cu)和锗(Ge)以及不可避成分构成，熔点约为270℃。此处，焊锡材料9A中，含有铋约98％(以下质量的百分比由％表示)，铜约2％，以及锗约0.06％，另外，不可避成分由例如铁(Fe)、镍(Ni)、铅(Pb)、锌(Zn)、铝(Al)、镉(Cd)或是砷(As)构成，各自含量不足0.01％。
焊锡材料9A的莫氏硬度约为2.5，比它下面的第1焊锡接合层11的约为2.0的莫氏硬度要高。
由此，如图6的区域VII的部分放大图的图7所示，球形的焊锡材料9A按压到第1焊锡接合层11，比焊锡材料9A柔软的第1焊锡接合层11中就形成了凹陷部分11a。
进一步地，如图8所示，按压焊锡材料9A，就在凹陷部分11a的下面的一部分形成了孔11b，最终，焊锡材料9A的一部分，通过形成的孔11b，进入模焊盘3的活性层10和第1焊锡接合层11之间。也就是说，焊锡材料9A替代了位于孔11b周围的第1焊锡接合层11，活性层10和第1焊锡接合层11之间的孔11b的外侧的区域也扩展开来，这样的状态下，活性层10和焊锡材料9A的一部分就接合了起来。
这样，本具体实施方式中，由于焊锡材料9A的下部不仅填充了凹陷部分11a，对于模焊盘3的活性层10也在很宽的范围(孔11b的外侧区域)接合起来，所以就提高了焊锡材料9A的下部与模焊盘3的接合强度。
此外，第1焊锡接合层11的焊锡材料9A的下侧形成孔11b，和焊锡材料9A扩展到孔11b的外侧，这种状态下模焊盘3的活性层10和焊锡材料9A的一部分接合起来的理由，还不是十分明确，但可以认为是由于焊锡材料9A以铋为主要成分，而构成第1焊锡接合层11的银在铋中扩散的原因。银在铋中的扩散，如图4所示，从第1焊锡接合层11和第2焊锡接合层15各自扩散的银，在焊锡材料9的内部形成了银的扩散浮动9a看来，可认为其可能性是很高的。
接下来如图9所示，在还原环境或是非氧化环境的加热状态中，焊锡材料9A的下部与模焊盘3接合的状态下，由压针18将球形的焊锡材料9A铺张开来。
接下来如图10所示，在还原环境或是非氧化环境的加热状态中，焊锡材料9A熔化成平缓的凸起形状。
接下来如图11所示，在还原环境或是非氧化环境的加热状态中，焊锡材料9A之上按压了半导体元件5。之后这样的状态下，温度下降，焊锡材料9固化，就获得了图4所示的结构的半导体装置。此外，半导体元件5的背面预先形成了具有上述构造的由粘接层12、中间结合层13、阻挡层14和第2焊锡接合层15构成的背面电极16。另外，构成背面电极16的阻挡层14中使用的是镍，而由于由银构成的第2焊锡接合层15介于背面电极16和焊锡材料9之间，在图11所示的工序中，镍离子扩散到焊锡材料9，不用担心会令其熔化温度上升。
另外，背面电极16不局限于上述构造，像金(Au)-锗(Ge)、金(Au)-锗(Ge)-锑(Sb)、或是钛(Ti)-镍(Ni)-银(Ag)等，普遍能用于半导体装置的背面电极，也能显示同样效果。
如以上的说明，本发明所涉及的半导体装置，模焊盘3的表面上形成的第1焊锡接合层11，是由比以铋为主要成分的焊锡材料9更软的材料构成，通过将该焊锡材料9按压至第1焊锡接合层11，可以在第1焊锡接合层11的一部分，形成在模焊盘3一侧的凹陷部分11a。由此，由于凹陷部分11a中得以填充焊锡材料9，就增大了模焊盘3上的第1焊锡接合层11和焊锡材料9的接合面积，就强化了焊锡材料9和模焊盘3之间的连接强度。其结果，稳定了模焊盘3上的半导体元件5的焊接。
本发明所涉及的半导体装置及其制造方法，由于强化了模焊盘和焊锡材料之间的连接强度，就稳定了模焊盘上的半导体元件的焊接，尤其对于在工作时变为高温的电子设备中组装的半导体装置及其制造方法有用。

Claims (12)

1.一种半导体装置，包括：
模焊盘，由在表面形成第1焊锡接合层的金属构成；和
半导体元件，由以铋为主要成分的焊锡材料固定在所述模焊盘的所述第1焊锡接合层上，
所述第1焊锡接合层，由比所述焊锡材料更软的材料构成；
在所述第1焊锡接合层的一部分中，形成由所述焊锡材料被按压而成的凹陷部分，所述焊锡材料的一部分填充至所述凹陷部分。
2.根据权利要求1所述的半导体装置，其特征在于：
所述第1焊锡接合层，由银或以银为主要成分的金属构成。
3.根据权利要求1或2所述的半导体装置，其特征在于：
所述焊锡材料，含有铋、铜和锗。
4.根据权利要求1～3的其中一项所述的半导体装置，其特征在于：
所述模焊盘，由铜或以铜为主要成分的金属构成。
5.根据权利要求1～4的其中一项所述的半导体装置，其特征在于：
在所述第1焊锡接合层的所述凹陷部分，形成露出所述模焊盘的开口部，通过形成的孔，所述焊锡材料与所述模焊盘的表面连接。
6.根据权利要求5所述的半导体装置，其特征在于：
所述焊锡材料进入所述开口部的外周部分的所述模焊盘与所述第1焊锡接合层之间。
7.根据权利要求1～6的其中一项所述的半导体装置，其特征在于：
与所述半导体元件的所述焊锡材料相对的面上，形成第2焊锡接合层，所述第2焊锡接合层由银或以银为主要成分的金属构成。
8.根据权利要求7所述的半导体装置，其特征在于：
在所述半导体元件与所述第2焊锡接合层之间，从所述半导体元件向所述第2焊锡接合层，依次形成粘接层、中间接合层和阻挡层。
9.根据权利要求8所述的半导体装置，其特征在于：
所述粘接层由铬构成，所述中间接合层由镍和铬的合金构成，所述阻挡层由镍构成。
10.权利要求1～9的其中一项所述的半导体装置的制造方法，包括：
步骤a，在所述模焊盘的表面形成的所述第1焊锡接合层上，通过按压球形的所述焊锡材料，在所述第1焊锡接合层形成凹陷部分；
步骤b，在所述步骤a之后，将所述焊锡材料在所述第1焊锡接合层上按压展开；和
步骤c，在所述步骤b之后，在按压展开的所述焊锡材料上按压所述半导体元件。
11.根据权利要求10所述的半导体装置的制造方法，其特征在于：
还进一步包括步骤d，在所述步骤a之前，将所述模焊盘加热。
12.根据权利要求10或11所述的半导体装置的制造方法，其特征在于：
在所述步骤a中，在所述第1焊锡接合层形成的凹陷部分，形成露出所述模焊盘的开口部，通过形成的开口部，所述焊锡材料与所述模焊盘的表面接触。
CN200980100250A 2008-10-22 2009-06-12 半导体装置及其制造方法 Pending CN101790780A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008-271639 2008-10-22
JP2008271639A JP2010103206A (ja) 2008-10-22 2008-10-22 半導体装置及びその製造方法
PCT/JP2009/002680 WO2010047010A1 (ja) 2008-10-22 2009-06-12 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
CN101790780A true CN101790780A (zh) 2010-07-28

Family

ID=42119068

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980100250A Pending CN101790780A (zh) 2008-10-22 2009-06-12 半导体装置及其制造方法

Country Status (5)

Country Link
US (1) US20100148367A1 (zh)
EP (1) EP2343734A1 (zh)
JP (1) JP2010103206A (zh)
CN (1) CN101790780A (zh)
WO (1) WO2010047010A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014112572A (ja) * 2011-03-29 2014-06-19 Panasonic Corp 半導体装置
JP5723225B2 (ja) * 2011-06-03 2015-05-27 パナソニック株式会社 接合構造体
WO2013108706A1 (ja) * 2012-01-18 2013-07-25 三菱電機株式会社 半導体装置および半導体装置の製造方法
CN104798185B (zh) * 2012-11-15 2018-04-10 日产自动车株式会社 Au系钎料模片接合半导体装置及其制造方法
JP2017509489A (ja) 2014-02-20 2017-04-06 ハネウェル・インターナショナル・インコーポレーテッド 鉛フリーはんだ組成物
DE102018204376B4 (de) * 2018-03-22 2022-07-07 Infineon Technologies Ag Siliziumcarbidvorrichtungen und Verfahren zur Herstellung derselben

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1509499A (zh) * 2001-06-14 2004-06-30 株式会社德山 元件焊接用基板及其制造方法
CN1825578A (zh) * 2005-02-24 2006-08-30 株式会社瑞萨科技 半导体器件及其制造方法
CN101162712A (zh) * 2006-10-13 2008-04-16 株式会社瑞萨科技 半导体装置及其制造方法
CN101243546A (zh) * 2005-08-22 2008-08-13 罗姆股份有限公司 半导体装置及其制造方法以及基板

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0437054A (ja) * 1990-05-31 1992-02-07 Nec Kansai Ltd 半田層の形成方法
JP3184449B2 (ja) * 1996-02-20 2001-07-09 松下電子工業株式会社 半導体素子用ダイボンド材
JP3296324B2 (ja) * 1999-04-07 2002-06-24 日本電気株式会社 半導体メモリ装置の製造方法
JP2005095977A (ja) * 2003-08-26 2005-04-14 Sanyo Electric Co Ltd 回路装置
JP4479577B2 (ja) * 2005-04-28 2010-06-09 株式会社日立製作所 半導体装置
JP2007059712A (ja) * 2005-08-25 2007-03-08 Tokai Rika Co Ltd 実装方法
JP3886144B1 (ja) * 2006-05-24 2007-02-28 松下電器産業株式会社 接合材料、電子部品および接合構造体
WO2007136009A1 (ja) * 2006-05-24 2007-11-29 Panasonic Corporation 接合材料、電子部品、接合構造体および電子機器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1509499A (zh) * 2001-06-14 2004-06-30 株式会社德山 元件焊接用基板及其制造方法
CN1825578A (zh) * 2005-02-24 2006-08-30 株式会社瑞萨科技 半导体器件及其制造方法
CN101243546A (zh) * 2005-08-22 2008-08-13 罗姆股份有限公司 半导体装置及其制造方法以及基板
CN101162712A (zh) * 2006-10-13 2008-04-16 株式会社瑞萨科技 半导体装置及其制造方法

Also Published As

Publication number Publication date
US20100148367A1 (en) 2010-06-17
WO2010047010A1 (ja) 2010-04-29
JP2010103206A (ja) 2010-05-06
EP2343734A1 (en) 2011-07-13

Similar Documents

Publication Publication Date Title
CN100461390C (zh) 倒装芯片半导体封装件及其制造方法
KR100684240B1 (ko) 반도체 장치 및 그 제조 방법
CN101790780A (zh) 半导体装置及其制造方法
CN100355065C (zh) 半导体器件及其制造方法
CN100565859C (zh) 具有改进的机械可靠性和热可靠性的半导体装置
CN1825578B (zh) 半导体器件及其制造方法
TWI605620B (zh) 熱電模組及其製造方法
CN101939832A (zh) 热机械的倒焊芯片的模片焊接
CN101136344A (zh) 制造半导体器件的方法
CN110891732B (zh) 用于扩散焊接的无铅的焊接薄膜和用于其制造的方法
CN105575937A (zh) 半导体装置和用于半导体装置的制造方法
TWI343112B (en) Package substrate having electrical connection structure and method for fabricating the same
US20240047439A1 (en) Batch Soldering of Different Elements in Power Module
JP5968046B2 (ja) 半導体装置および半導体装置の製造方法
JP2006516361A5 (zh)
CN103187519B (zh) 热电模块及其制造方法
CN101894764B (zh) 半导体构造及其制造方法
CN115881673A (zh) 层结构、芯片封装体以及它们的形成方法和焊料材料
JP6156693B2 (ja) 半導体装置の製造方法
JP3832414B2 (ja) ハーメチックシール用キャップ
CN110416101A (zh) 用烧结银浆作为粘接剂的电源模块铜片焊接工艺
CA1226967A (en) Tape bonding material and structure for electronic circuit fabrication
TWI436465B (zh) 銲線接合結構、銲線接合方法及半導體封裝構造的製造方法
JP2008270846A (ja) 半導体装置の製造方法
JP2538394B2 (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20100728