CN101779275A - 用氟化组合物移除杂质的方法 - Google Patents

用氟化组合物移除杂质的方法 Download PDF

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Publication number
CN101779275A
CN101779275A CN200880100350A CN200880100350A CN101779275A CN 101779275 A CN101779275 A CN 101779275A CN 200880100350 A CN200880100350 A CN 200880100350A CN 200880100350 A CN200880100350 A CN 200880100350A CN 101779275 A CN101779275 A CN 101779275A
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CN
China
Prior art keywords
substrate
ion
photoresist
ions
composition
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Pending
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CN200880100350A
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English (en)
Chinese (zh)
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埃里克·D·奥尔森
菲利普·G·克拉克
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of CN101779275A publication Critical patent/CN101779275A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01316—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of elemental metal contacting the insulator, e.g. Ta, W, Mo or Al
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
CN200880100350A 2007-07-25 2008-05-06 用氟化组合物移除杂质的方法 Pending CN101779275A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/782,766 2007-07-25
US11/782,766 US20090029274A1 (en) 2007-07-25 2007-07-25 Method for removing contamination with fluorinated compositions
PCT/US2008/062725 WO2009014791A1 (en) 2007-07-25 2008-05-06 Method for removing contamination with fluorinated compositions

Publications (1)

Publication Number Publication Date
CN101779275A true CN101779275A (zh) 2010-07-14

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880100350A Pending CN101779275A (zh) 2007-07-25 2008-05-06 用氟化组合物移除杂质的方法

Country Status (7)

Country Link
US (1) US20090029274A1 (https=)
EP (1) EP2179440A4 (https=)
JP (1) JP2010534358A (https=)
KR (1) KR20100053574A (https=)
CN (1) CN101779275A (https=)
TW (1) TW200913046A (https=)
WO (1) WO2009014791A1 (https=)

Cited By (9)

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CN104387831A (zh) * 2014-11-27 2015-03-04 孙更生 一种基于聚硅氧烷的注射针涂层用溶剂组合物
CN105199859A (zh) * 2015-09-17 2015-12-30 惠州学院 一种半导体表面清洗剂及其制备方法
CN105238567A (zh) * 2015-10-10 2016-01-13 泉州市福达科技咨询有限公司 一种环保型含氟清洗剂及其制备方法
CN106715485A (zh) * 2014-09-11 2017-05-24 3M创新有限公司 包含氟化表面活性剂的组合物
CN106992118A (zh) * 2015-10-20 2017-07-28 台湾积体电路制造股份有限公司 半导体器件制造的方法和处理系统
CN107017157A (zh) * 2015-10-20 2017-08-04 台湾积体电路制造股份有限公司 原子层沉积方法及其结构
CN108301011A (zh) * 2017-12-25 2018-07-20 博罗县东明化工有限公司 压铸铝合金清洗剂及其制备方法
CN113675083A (zh) * 2021-10-25 2021-11-19 江山季丰电子科技有限公司 暴露绝缘体上硅器件有源区的方法、应用和失效分析方法
CN117402686A (zh) * 2023-09-27 2024-01-16 华阳新兴科技（天津）集团有限公司 一种运载火箭涂装清洗剂及其制备方法

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US20120286192A1 (en) 2011-05-12 2012-11-15 3M Innovative Properties Company Azeotrope-like compositions with 1,1,1,3,3-pentafluorobutane
WO2013074622A1 (en) * 2011-11-14 2013-05-23 Orthogonal, Inc. Method for patterning an organic material using a non-fluorinated photoresist
US20140322656A1 (en) * 2013-04-24 2014-10-30 Orthogonal, Inc. Method of patterning a device
US10767143B2 (en) 2014-03-06 2020-09-08 Sage Electrochromics, Inc. Particle removal from electrochromic films using non-aqueous fluids
DE102016116467A1 (de) 2015-10-20 2017-04-20 Taiwan Semiconductor Manufacturing Co., Ltd. Atomschichtabscheidungsverfahren und strukturen davon
US9799745B2 (en) * 2015-10-20 2017-10-24 Taiwan Semiconductor Manufacturing Co., Ltd. Atomic layer deposition methods and structures thereof
US10204893B2 (en) 2016-05-19 2019-02-12 Invensas Bonding Technologies, Inc. Stacked dies and methods for forming bonded structures
US20180182665A1 (en) 2016-12-28 2018-06-28 Invensas Bonding Technologies, Inc. Processed Substrate
US10879212B2 (en) * 2017-05-11 2020-12-29 Invensas Bonding Technologies, Inc. Processed stacked dies
JP7327387B2 (ja) * 2018-04-27 2023-08-16 日本ゼオン株式会社 Ｅｕｖリソグラフィ用ポジ型レジスト組成物およびレジストパターン形成方法
US11276676B2 (en) 2018-05-15 2022-03-15 Invensas Bonding Technologies, Inc. Stacked devices and methods of fabrication
WO2020010265A1 (en) 2018-07-06 2020-01-09 Invensas Bonding Technologies, Inc. Microelectronic assemblies
US11158606B2 (en) 2018-07-06 2021-10-26 Invensas Bonding Technologies, Inc. Molded direct bonded and interconnected stack
US12406959B2 (en) 2018-07-26 2025-09-02 Adeia Semiconductor Bonding Technologies Inc. Post CMP processing for hybrid bonding
US11296044B2 (en) 2018-08-29 2022-04-05 Invensas Bonding Technologies, Inc. Bond enhancement structure in microelectronics for trapping contaminants during direct-bonding processes
CN113330557A (zh) 2019-01-14 2021-08-31 伊文萨思粘合技术公司 键合结构
US11296053B2 (en) 2019-06-26 2022-04-05 Invensas Bonding Technologies, Inc. Direct bonded stack structures for increased reliability and improved yield in microelectronics
US12080672B2 (en) 2019-09-26 2024-09-03 Adeia Semiconductor Bonding Technologies Inc. Direct gang bonding methods including directly bonding first element to second element to form bonded structure without adhesive
JPWO2021182182A1 (https=) * 2020-03-12 2021-09-16
US11631647B2 (en) 2020-06-30 2023-04-18 Adeia Semiconductor Bonding Technologies Inc. Integrated device packages with integrated device die and dummy element

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Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106715485A (zh) * 2014-09-11 2017-05-24 3M创新有限公司 包含氟化表面活性剂的组合物
CN106715485B (zh) * 2014-09-11 2019-11-12 3M创新有限公司 包含氟化表面活性剂的组合物
CN104387831A (zh) * 2014-11-27 2015-03-04 孙更生 一种基于聚硅氧烷的注射针涂层用溶剂组合物
CN105199859B (zh) * 2015-09-17 2018-03-27 惠州学院 一种半导体表面清洗剂及其制备方法
CN105199859A (zh) * 2015-09-17 2015-12-30 惠州学院 一种半导体表面清洗剂及其制备方法
CN105238567A (zh) * 2015-10-10 2016-01-13 泉州市福达科技咨询有限公司 一种环保型含氟清洗剂及其制备方法
CN105238567B (zh) * 2015-10-10 2017-11-17 泉州市福达科技咨询有限公司 一种环保型含氟清洗剂及其制备方法
CN106992118B (zh) * 2015-10-20 2020-09-08 台湾积体电路制造股份有限公司 半导体器件制造的方法和处理系统
CN107017157A (zh) * 2015-10-20 2017-08-04 台湾积体电路制造股份有限公司 原子层沉积方法及其结构
CN107017157B (zh) * 2015-10-20 2020-04-07 台湾积体电路制造股份有限公司 原子层沉积方法及其结构
CN106992118A (zh) * 2015-10-20 2017-07-28 台湾积体电路制造股份有限公司 半导体器件制造的方法和处理系统
CN108301011A (zh) * 2017-12-25 2018-07-20 博罗县东明化工有限公司 压铸铝合金清洗剂及其制备方法
CN108301011B (zh) * 2017-12-25 2020-08-11 博罗县东明化工有限公司 压铸铝合金清洗剂及其制备方法
CN113675083A (zh) * 2021-10-25 2021-11-19 江山季丰电子科技有限公司 暴露绝缘体上硅器件有源区的方法、应用和失效分析方法
CN113675083B (zh) * 2021-10-25 2021-12-21 江山季丰电子科技有限公司 暴露绝缘体上硅器件有源区的方法、应用和失效分析方法
CN117402686A (zh) * 2023-09-27 2024-01-16 华阳新兴科技（天津）集团有限公司 一种运载火箭涂装清洗剂及其制备方法
CN117402686B (zh) * 2023-09-27 2026-04-07 华阳新兴科技（天津）集团有限公司 一种运载火箭涂装清洗剂及其制备方法

Also Published As

Publication number Publication date
KR20100053574A (ko) 2010-05-20
EP2179440A4 (en) 2011-03-09
TW200913046A (en) 2009-03-16
JP2010534358A (ja) 2010-11-04
US20090029274A1 (en) 2009-01-29
WO2009014791A1 (en) 2009-01-29
EP2179440A1 (en) 2010-04-28

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Application publication date: 20100714