KR20100053574A - 플루오르화된 조성물을 사용하여 오염을 제거하는 방법 - Google Patents

플루오르화된 조성물을 사용하여 오염을 제거하는 방법 Download PDF

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Publication number
KR20100053574A
KR20100053574A KR1020107004004A KR20107004004A KR20100053574A KR 20100053574 A KR20100053574 A KR 20100053574A KR 1020107004004 A KR1020107004004 A KR 1020107004004A KR 20107004004 A KR20107004004 A KR 20107004004A KR 20100053574 A KR20100053574 A KR 20100053574A
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KR
South Korea
Prior art keywords
substrate
composition
photoresist
ions
ion implantation
Prior art date
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Ceased
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KR1020107004004A
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English (en)
Korean (ko)
Inventor
에릭 디 올슨
필립 지 클라크
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 컴파니
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Publication of KR20100053574A publication Critical patent/KR20100053574A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01316—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of elemental metal contacting the insulator, e.g. Ta, W, Mo or Al
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
KR1020107004004A 2007-07-25 2008-05-06 플루오르화된 조성물을 사용하여 오염을 제거하는 방법 Ceased KR20100053574A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/782,766 2007-07-25
US11/782,766 US20090029274A1 (en) 2007-07-25 2007-07-25 Method for removing contamination with fluorinated compositions

Publications (1)

Publication Number Publication Date
KR20100053574A true KR20100053574A (ko) 2010-05-20

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Family Applications (1)

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KR1020107004004A Ceased KR20100053574A (ko) 2007-07-25 2008-05-06 플루오르화된 조성물을 사용하여 오염을 제거하는 방법

Country Status (7)

Country Link
US (1) US20090029274A1 (https=)
EP (1) EP2179440A4 (https=)
JP (1) JP2010534358A (https=)
KR (1) KR20100053574A (https=)
CN (1) CN101779275A (https=)
TW (1) TW200913046A (https=)
WO (1) WO2009014791A1 (https=)

Cited By (5)

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KR101126268B1 (ko) * 2010-09-30 2012-03-20 주식회사 삼한 씨원 표면오염 억제 기능이 있는 황토벽돌 제조방법
KR20170046088A (ko) * 2015-10-20 2017-04-28 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 원자층 성막 방법 및 그 구조체
KR20170046085A (ko) * 2015-10-20 2017-04-28 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 원자 층 증착 방법 및 그에 의한 구조물
KR20190132615A (ko) * 2015-10-20 2019-11-28 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 원자층 증착 방법들 및 그것의 구조물들
US12575154B2 (en) 2015-10-20 2026-03-10 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for pre-deposition treatment of a work-function metal layer

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US20120286192A1 (en) 2011-05-12 2012-11-15 3M Innovative Properties Company Azeotrope-like compositions with 1,1,1,3,3-pentafluorobutane
WO2013074622A1 (en) * 2011-11-14 2013-05-23 Orthogonal, Inc. Method for patterning an organic material using a non-fluorinated photoresist
US20140322656A1 (en) * 2013-04-24 2014-10-30 Orthogonal, Inc. Method of patterning a device
US10767143B2 (en) 2014-03-06 2020-09-08 Sage Electrochromics, Inc. Particle removal from electrochromic films using non-aqueous fluids
EP3191532B1 (en) * 2014-09-11 2019-08-28 3M Innovative Properties Company Fluorinated surfactant containing compositions
CN104387831B (zh) * 2014-11-27 2017-05-10 孙更生 一种基于聚硅氧烷的注射针涂层用溶剂组合物
CN105199859B (zh) * 2015-09-17 2018-03-27 惠州学院 一种半导体表面清洗剂及其制备方法
CN105238567B (zh) * 2015-10-10 2017-11-17 泉州市福达科技咨询有限公司 一种环保型含氟清洗剂及其制备方法
US10204893B2 (en) 2016-05-19 2019-02-12 Invensas Bonding Technologies, Inc. Stacked dies and methods for forming bonded structures
US20180182665A1 (en) 2016-12-28 2018-06-28 Invensas Bonding Technologies, Inc. Processed Substrate
US10879212B2 (en) * 2017-05-11 2020-12-29 Invensas Bonding Technologies, Inc. Processed stacked dies
CN108301011B (zh) * 2017-12-25 2020-08-11 博罗县东明化工有限公司 压铸铝合金清洗剂及其制备方法
JP7327387B2 (ja) * 2018-04-27 2023-08-16 日本ゼオン株式会社 Ｅｕｖリソグラフィ用ポジ型レジスト組成物およびレジストパターン形成方法
US11276676B2 (en) 2018-05-15 2022-03-15 Invensas Bonding Technologies, Inc. Stacked devices and methods of fabrication
WO2020010265A1 (en) 2018-07-06 2020-01-09 Invensas Bonding Technologies, Inc. Microelectronic assemblies
US11158606B2 (en) 2018-07-06 2021-10-26 Invensas Bonding Technologies, Inc. Molded direct bonded and interconnected stack
US12406959B2 (en) 2018-07-26 2025-09-02 Adeia Semiconductor Bonding Technologies Inc. Post CMP processing for hybrid bonding
US11296044B2 (en) 2018-08-29 2022-04-05 Invensas Bonding Technologies, Inc. Bond enhancement structure in microelectronics for trapping contaminants during direct-bonding processes
CN113330557A (zh) 2019-01-14 2021-08-31 伊文萨思粘合技术公司 键合结构
US11296053B2 (en) 2019-06-26 2022-04-05 Invensas Bonding Technologies, Inc. Direct bonded stack structures for increased reliability and improved yield in microelectronics
US12080672B2 (en) 2019-09-26 2024-09-03 Adeia Semiconductor Bonding Technologies Inc. Direct gang bonding methods including directly bonding first element to second element to form bonded structure without adhesive
JPWO2021182182A1 (https=) * 2020-03-12 2021-09-16
US11631647B2 (en) 2020-06-30 2023-04-18 Adeia Semiconductor Bonding Technologies Inc. Integrated device packages with integrated device die and dummy element
CN113675083B (zh) * 2021-10-25 2021-12-21 江山季丰电子科技有限公司 暴露绝缘体上硅器件有源区的方法、应用和失效分析方法
CN117402686B (zh) * 2023-09-27 2026-04-07 华阳新兴科技（天津）集团有限公司 一种运载火箭涂装清洗剂及其制备方法

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101126268B1 (ko) * 2010-09-30 2012-03-20 주식회사 삼한 씨원 표면오염 억제 기능이 있는 황토벽돌 제조방법
KR20170046088A (ko) * 2015-10-20 2017-04-28 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 원자층 성막 방법 및 그 구조체
KR20170046085A (ko) * 2015-10-20 2017-04-28 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 원자 층 증착 방법 및 그에 의한 구조물
KR20190132615A (ko) * 2015-10-20 2019-11-28 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 원자층 증착 방법들 및 그것의 구조물들
US10658488B2 (en) 2015-10-20 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Atomic layer deposition methods and structures thereof
US10854725B2 (en) 2015-10-20 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Atomic layer deposition methods and structures thereof
US10923576B2 (en) 2015-10-20 2021-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Atomic layer deposition methods and structures thereof
US12575154B2 (en) 2015-10-20 2026-03-10 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for pre-deposition treatment of a work-function metal layer

Also Published As

Publication number Publication date
EP2179440A4 (en) 2011-03-09
TW200913046A (en) 2009-03-16
JP2010534358A (ja) 2010-11-04
US20090029274A1 (en) 2009-01-29
WO2009014791A1 (en) 2009-01-29
EP2179440A1 (en) 2010-04-28
CN101779275A (zh) 2010-07-14

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