CN101681956B - 量子点发光装置 - Google Patents

量子点发光装置 Download PDF

Info

Publication number
CN101681956B
CN101681956B CN2008800075316A CN200880007531A CN101681956B CN 101681956 B CN101681956 B CN 101681956B CN 2008800075316 A CN2008800075316 A CN 2008800075316A CN 200880007531 A CN200880007531 A CN 200880007531A CN 101681956 B CN101681956 B CN 101681956B
Authority
CN
China
Prior art keywords
electrode
light
inorganic light
inorganic
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008800075316A
Other languages
English (en)
Chinese (zh)
Other versions
CN101681956A (zh
Inventor
K·B·卡汉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanoco Technologies Ltd
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of CN101681956A publication Critical patent/CN101681956A/zh
Application granted granted Critical
Publication of CN101681956B publication Critical patent/CN101681956B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949—Radiation emitter using nanostructure
    • Y10S977/95—Electromagnetic energy

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
CN2008800075316A 2007-03-08 2008-02-18 量子点发光装置 Expired - Fee Related CN101681956B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/683,479 US7888700B2 (en) 2007-03-08 2007-03-08 Quantum dot light emitting device
US11/683,479 2007-03-08
PCT/US2008/002041 WO2008112062A2 (en) 2007-03-08 2008-02-18 Quantum dot light emitting device

Publications (2)

Publication Number Publication Date
CN101681956A CN101681956A (zh) 2010-03-24
CN101681956B true CN101681956B (zh) 2012-04-25

Family

ID=39529405

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008800075316A Expired - Fee Related CN101681956B (zh) 2007-03-08 2008-02-18 量子点发光装置

Country Status (6)

Country Link
US (1) US7888700B2 (enExample)
EP (1) EP2115791A2 (enExample)
JP (1) JP2010520603A (enExample)
CN (1) CN101681956B (enExample)
TW (1) TWI436496B (enExample)
WO (1) WO2008112062A2 (enExample)

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7308202B2 (en) * 2002-02-01 2007-12-11 Cubic Corporation Secure covert combat identification friend-or-foe (IFF) system for the dismounted soldier
JP2009526370A (ja) * 2006-02-09 2009-07-16 キユーデイー・ビジヨン・インコーポレーテツド 半導体ナノ結晶およびドープされた有機材料を含む層を含むデバイスおよび方法
US8835941B2 (en) * 2006-02-09 2014-09-16 Qd Vision, Inc. Displays including semiconductor nanocrystals and methods of making same
WO2007143197A2 (en) 2006-06-02 2007-12-13 Qd Vision, Inc. Light-emitting devices and displays with improved performance
JP2010508620A (ja) 2006-09-12 2010-03-18 キユーデイー・ビジヨン・インコーポレーテツド 所定のパターンを表示するために有用なエレクトロルミネセントディスプレイ
KR20090002787A (ko) * 2007-07-04 2009-01-09 삼성전자주식회사 트랜지스터 구조를 이용한 발광소자 및 수광소자
US7679805B2 (en) * 2007-07-11 2010-03-16 Cubic Corporation Flip chip quantum well modulator
WO2009014707A2 (en) 2007-07-23 2009-01-29 Qd Vision, Inc. Quantum dot light enhancement substrate and lighting device including same
US8128249B2 (en) * 2007-08-28 2012-03-06 Qd Vision, Inc. Apparatus for selectively backlighting a material
US8092719B2 (en) * 2007-09-04 2012-01-10 Samsung Electronics Co., Ltd. Nanocrystal-metal oxide composites and preparation method thereof
JP5176459B2 (ja) * 2007-09-28 2013-04-03 大日本印刷株式会社 白色発光素子
US8027591B2 (en) * 2007-10-29 2011-09-27 Cubic Corporation Resonant quantum well modulator driver
US7859675B2 (en) * 2007-11-06 2010-12-28 Cubic Corporation Field test of a retro-reflector and detector assembly
US20110031452A1 (en) * 2007-11-28 2011-02-10 Todd Krauss Nanoparticles Having Continuous Photoluminescence
WO2009099425A2 (en) 2008-02-07 2009-08-13 Qd Vision, Inc. Flexible devices including semiconductor nanocrystals, arrays, and methods
KR101995371B1 (ko) 2008-04-03 2019-07-02 삼성 리서치 아메리카 인코포레이티드 양자점들을 포함하는 발광 소자
US9525148B2 (en) 2008-04-03 2016-12-20 Qd Vision, Inc. Device including quantum dots
US8459855B2 (en) * 2008-07-28 2013-06-11 Munisamy Anandan UV LED based color pixel backlight incorporating quantum dots for increasing color gamut of LCD
US8343575B2 (en) 2008-12-30 2013-01-01 Nanosys, Inc. Methods for encapsulating nanocrystals and resulting compositions
US10214686B2 (en) 2008-12-30 2019-02-26 Nanosys, Inc. Methods for encapsulating nanocrystals and resulting compositions
US11198270B2 (en) 2008-12-30 2021-12-14 Nanosys, Inc. Quantum dot films, lighting devices, and lighting methods
KR20110118646A (ko) * 2009-01-05 2011-10-31 플렉스트로닉스, 인크 유기 발광 다이오드 광선치료 조명 시스템
KR101097342B1 (ko) * 2010-03-09 2011-12-23 삼성모바일디스플레이주식회사 양자점 유기 전계 발광 소자 및 그 형성방법
US8530883B2 (en) * 2010-03-11 2013-09-10 Light-Based Technologies Incorporated Manufacture of quantum dot-enabled solid-state light emitters
US8085467B1 (en) 2010-06-16 2011-12-27 Eastman Kodak Company Projection display surface providing speckle reduction
US8469519B2 (en) 2010-06-16 2013-06-25 Eastman Kodak Company Projection apparatus providing reduced speckle artifacts
KR102098682B1 (ko) 2010-11-10 2020-05-22 나노시스, 인크. 양자 도트 필름들, 조명 디바이스들, 및 조명 방법들
DE102011076535A1 (de) 2011-05-26 2012-11-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Informationsspeicher, optischer informationsträger, vorrichtung zum speichern von informationen in informationsspeicher und verwendung eines informationsspeichers als passives display
WO2012089739A2 (de) 2010-12-28 2012-07-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Informationsspeicher, optischer informationsträger, vorrichtung zum speichern von informationen in informationsspeicher, verwendung eines informationsspeichers als passives display und sensoranordung
JP5719610B2 (ja) * 2011-01-21 2015-05-20 三菱電機株式会社 薄膜トランジスタ、及びアクティブマトリクス基板
US8541833B2 (en) * 2011-04-08 2013-09-24 Infineon Technologies Austria Ag Power transistor device vertical integration
TW201248894A (en) 2011-05-16 2012-12-01 Qd Vision Inc Device including quantum dots and method for making same
KR101916245B1 (ko) 2011-07-27 2018-11-07 엘지이노텍 주식회사 광학 부재 및 이를 포함하는 표시장치
GB201116517D0 (en) * 2011-09-23 2011-11-09 Nanoco Technologies Ltd Semiconductor nanoparticle based light emitting materials
KR101927116B1 (ko) * 2011-10-31 2018-12-11 엘지디스플레이 주식회사 퀀텀 로드 발광 표시장치
KR101927115B1 (ko) * 2011-10-31 2018-12-11 엘지디스플레이 주식회사 퀀텀 로드 발광 표시장치
CN102569570A (zh) * 2012-01-04 2012-07-11 天津理工大学 一种近红外无机量子点电致发光器件及制备方法
WO2013103440A1 (en) 2012-01-06 2013-07-11 Qd Vision, Inc. Light emitting device including blue emitting quantum dots and method
US8962378B2 (en) * 2012-07-16 2015-02-24 The Boeing Company Photodiode and method for making the same
WO2014099080A2 (en) 2012-09-26 2014-06-26 University Of Florida Research Foundation, Inc. Transparent quantum dot light-emitting diodes with dielectric/metal/dielectric electrode
US9123638B2 (en) * 2013-03-15 2015-09-01 Rohm And Haas Electronic Materials, Llc Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
KR102228142B1 (ko) * 2013-04-05 2021-03-22 삼성디스플레이 주식회사 양자점, 양자점의 제조 방법 및 이를 이용한 유기 발광 표시 장치의 제조 방법
US9559322B2 (en) 2013-04-05 2017-01-31 Samsung Display Co., Ltd. Quantum dots, methods of manufacturing quantum dots and methods of manufacturing organic light emitting display devices using the same
US20140339437A1 (en) * 2013-05-17 2014-11-20 Hany Maher AZIZ Method and apparatus for sensing device including quantum dot light emitting devices
JP6657956B2 (ja) * 2014-01-16 2020-03-04 コニカミノルタ株式会社 電界発光素子
US20160333268A1 (en) * 2014-01-17 2016-11-17 Pacific Light Technologies Corp. Irregular Large Volume Semiconductor Coatings for Quantum Dots (QDs)
JP6357349B2 (ja) * 2014-05-16 2018-07-11 株式会社ジャパンディスプレイ 表示装置
JP6425921B2 (ja) 2014-06-12 2018-11-21 株式会社ジャパンディスプレイ 画像表示装置
US10739882B2 (en) * 2014-08-06 2020-08-11 Apple Inc. Electronic device display with array of discrete light-emitting diodes
JP6391401B2 (ja) 2014-10-03 2018-09-19 株式会社ジャパンディスプレイ 画像表示装置
JP2016139560A (ja) 2015-01-28 2016-08-04 株式会社ジャパンディスプレイ 表示装置
WO2016126928A1 (en) * 2015-02-04 2016-08-11 University Of North Carolina At Charlotte Quantum dot light emitting devices
WO2017033137A1 (en) * 2015-08-27 2017-03-02 Sabic Global Technologies B.V. Apparatus having electroluminescent quantum dots
KR102607451B1 (ko) * 2016-03-15 2023-11-28 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치
CN105676517A (zh) * 2016-03-22 2016-06-15 成都京东方光电科技有限公司 一种量子点膜及显示装置
CN105789237A (zh) * 2016-04-25 2016-07-20 京东方科技集团股份有限公司 Led显示模组、显示装置及显示模组的制作方法
US9825214B1 (en) * 2016-06-22 2017-11-21 Mainstream Engineering Corporation Films and the like produced from particles by processing with electron beams, and a method for production thereof
KR102672449B1 (ko) * 2016-09-19 2024-06-05 엘지디스플레이 주식회사 무기발광입자, 무기발광입자필름, 이를 포함하는 엘이디 패키지 및 표시장치
US10790411B2 (en) * 2016-12-01 2020-09-29 Nanosys, Inc. Quantum dot LED with spacer particles
KR102712599B1 (ko) 2017-10-17 2024-10-02 엘지디스플레이 주식회사 발광체, 이를 포함하는 발광 필름, 발광다이오드 및 발광장치
CN109671837B (zh) * 2017-10-17 2021-08-10 乐金显示有限公司 发光体以及包括其的发光膜、发光二极管和发光装置
US20200328325A1 (en) * 2017-10-19 2020-10-15 Ns Materials Inc. Light emitting device and illumination device
TWI648846B (zh) * 2017-12-20 2019-01-21 友達光電股份有限公司 光偵測器
US11049900B2 (en) 2018-08-30 2021-06-29 Analog Devices, Inc. Monolithically integrated nanoemitter light source assembly
KR102547915B1 (ko) * 2018-10-12 2023-06-23 엘지디스플레이 주식회사 양자점 발광다이오드, 그 제조 방법 및 양자점 발광표시장치
US11996501B2 (en) * 2019-02-20 2024-05-28 Sharp Kabushiki Kaisha Method for manufacturing light-emitting device
US20220149338A1 (en) * 2019-02-20 2022-05-12 Sharp Kabushiki Kaisha Light-emitting device, and method for manufacturing light-emitting device
CN109855526B (zh) * 2019-02-28 2020-08-21 吉林大学 一种基于干燥介导自组装的电阻式柔性应变传感器及其制备方法
KR102718897B1 (ko) 2019-10-31 2024-10-16 삼성전자주식회사 발광 소자, 그 제조방법 및 이를 포함한 표시 장치
US20230403874A1 (en) * 2020-10-30 2023-12-14 Sharp Kabushiki Kaisha Light-emitting element, display device and light-emitting element manufacturing method
CN114695749A (zh) * 2020-12-31 2022-07-01 Tcl科技集团股份有限公司 光电器件
US11832496B1 (en) * 2022-05-20 2023-11-28 Taiwan Semiconductor Manufacturing Company Ltd Color display with color filter layer comprising two-dimensional photonic crystals formed in a dielectric layer
WO2024053088A1 (ja) * 2022-09-09 2024-03-14 シャープディスプレイテクノロジー株式会社 発光素子および表示装置
WO2024079909A1 (ja) * 2022-10-14 2024-04-18 シャープディスプレイテクノロジー株式会社 発光素子、表示デバイス
WO2024079908A1 (ja) * 2022-10-14 2024-04-18 シャープディスプレイテクノロジー株式会社 発光素子および表示装置並びに発光素子の製造方法
WO2024218913A1 (ja) * 2023-04-19 2024-10-24 シャープディスプレイテクノロジー株式会社 発光素子、表示装置、および発光素子の製造方法
WO2024218888A1 (ja) * 2023-04-19 2024-10-24 シャープディスプレイテクノロジー株式会社 発光素子、表示装置、および発光素子の製造方法
WO2025191670A1 (ja) * 2024-03-12 2025-09-18 シャープディスプレイテクノロジー株式会社 発光素子、表示装置および発光素子の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1471343A (zh) * 2003-06-26 2004-01-28 孙润光 高对比度电致发光器件
US7122446B2 (en) * 1999-06-23 2006-10-17 Kabushiki Kaisha Toshiba Semiconductor light-emitting element

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW439387B (en) * 1998-12-01 2001-06-07 Sanyo Electric Co Display device
JP2002014343A (ja) * 2000-04-26 2002-01-18 Nec Corp 液晶表示装置、発光素子、液晶表示装置の製造方法
WO2003021694A2 (en) * 2001-09-04 2003-03-13 Koninklijke Philips Electronics N.V. Electroluminescent device comprising quantum dots
US6878871B2 (en) * 2002-09-05 2005-04-12 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US7132787B2 (en) * 2002-11-20 2006-11-07 The Regents Of The University Of California Multilayer polymer-quantum dot light emitting diodes and methods of making and using thereof
JP2007534146A (ja) * 2003-09-05 2007-11-22 ザ・ユニバーシティ・オブ・ノース・カロライナ・アット・シャーロット ナノスケールでエピタキシャル横方向成長させた量子ドット光電子デバイスおよびその製造方法
US7746681B2 (en) * 2005-01-07 2010-06-29 Invisage Technologies, Inc. Methods of making quantum dot films
JP4378230B2 (ja) * 2004-06-15 2009-12-02 キヤノン株式会社 発光素子及びその製造方法
KR100773538B1 (ko) * 2004-10-07 2007-11-07 삼성전자주식회사 반사 전극 및 이를 구비하는 화합물 반도체 발광소자
US7615800B2 (en) * 2005-09-14 2009-11-10 Eastman Kodak Company Quantum dot light emitting layer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7122446B2 (en) * 1999-06-23 2006-10-17 Kabushiki Kaisha Toshiba Semiconductor light-emitting element
CN1471343A (zh) * 2003-06-26 2004-01-28 孙润光 高对比度电致发光器件

Also Published As

Publication number Publication date
CN101681956A (zh) 2010-03-24
US20080217602A1 (en) 2008-09-11
JP2010520603A (ja) 2010-06-10
WO2008112062A3 (en) 2008-12-11
TW200845433A (en) 2008-11-16
WO2008112062A2 (en) 2008-09-18
TWI436496B (zh) 2014-05-01
US7888700B2 (en) 2011-02-15
EP2115791A2 (en) 2009-11-11

Similar Documents

Publication Publication Date Title
CN101681956B (zh) 量子点发光装置
US7615800B2 (en) Quantum dot light emitting layer
US7919342B2 (en) Patterned inorganic LED device
US11005058B2 (en) Light-emitting device including quantum dots
US8361823B2 (en) Light-emitting nanocomposite particles
US20080237611A1 (en) Electroluminescent device having improved contrast
US7952105B2 (en) Light-emitting display device having improved efficiency
US20080001538A1 (en) Led device having improved light output
US20080278063A1 (en) Electroluminescent device having improved power distribution

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20180103

Address after: University of Manchester

Patentee after: Nanoco Technologies Ltd.

Address before: American New York

Patentee before: Eastman Kodak Co.

TR01 Transfer of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120425

Termination date: 20210218

CF01 Termination of patent right due to non-payment of annual fee