CN101681853A - 对电连接中具有高迁移率的组分的束缚 - Google Patents

对电连接中具有高迁移率的组分的束缚 Download PDF

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CN101681853A
CN101681853A CN200880016621A CN200880016621A CN101681853A CN 101681853 A CN101681853 A CN 101681853A CN 200880016621 A CN200880016621 A CN 200880016621A CN 200880016621 A CN200880016621 A CN 200880016621A CN 101681853 A CN101681853 A CN 101681853A
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jointing metal
barrier material
volume
conduction
barrier
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CN101681853B (zh
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约翰·特雷扎
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Cubic Wafer Inc
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Cubic Wafer Inc
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Abstract

一种制造电触点的方法，涉及：在电连接的位置设置阻隔材料，在阻隔材料上设置导电的接合金属，导电的接合金属具有扩散的可动成分，选择阻隔材料的体积和扩散的可动成分的体积，使得阻隔材料的体积至少是阻隔材料的体积和扩散的可动成分的体积的组合体积的20％。电连接在两个触点之间具有导电的接合金属，设置于导电的接合金属至少一侧的阻隔材料，以及位于在阻隔材料和导电的接合金属之间的交界面的合金。合金包括至少一些阻隔材料，至少一些接合金属和可动材料。

Description

对电连接中具有高迁移率的组分的束缚
技术领域
[0001]本发明涉及半导体，并且更具体地，涉及用于这样的装置的电连接。
背景技术
[0003]用于倒装式管芯附接的典型的焊球是由63％铅-37％锡制成的。就在作为传统的焊球形成处理的最后一个步骤并在附接之前发生的回流之后，焊接材料在成分和稠度方面是均匀的。图1是就在回流之后的典型的焊球100的横截面的放大照片。在该焊接材料中，存在非常易动的锡离子。结果，随着时间的过去，这些锡离子将在焊料中迁移。即使在适度的温度，迁移离子也将趋向于在一起结块，致使铅和锡经受相间隔离处理。图2是典型的焊球200在150℃的温度下(该温度在某些芯片的工作温度之内)经过1000小时之后的横截面的放大照片。在图2中很明显，对锡进行的显著的相间隔离形成图2中的浅色的块202。由于发生了该相间隔离，焊球变得更加易碎并且它的可靠性下降。同样的相间隔离也可以由于可动原子的电迁移而发生。图3是典型的焊料块300在由于可动原子的电迁移而已经发生相间隔离302时的横截面的放大照片。如同图2一样，结果是易碎的焊料块和下降的可靠性。在这两种情况中，当连接涉及已经经受相间隔离的焊料块时，连接的寿命被减少。
[0004]除了缩短寿命之外，相间隔离降低了焊料块的载流能力。这是因为原子的扩散会留下不携带电流的空隙304，而且随着处理继续以及连接经受使用中伴随的加热和冷却循环，空隙304变大并最终成为接触失败的根源。
[0005]不会导致相间隔离的一个方法是使用如同金的单个的非活性金属来形成连接。虽然这种方法避免了这个问题，但是却显著地增加了每个连接的成本，在商业应用中成本竞争是个问题，因此这对商业应用来说是不能令人满意的。
[0006]因此，在电连接的领域中需要不具有如上所述的现有技术中存在的相间隔离问题的接触方法。
[0007]而且，需要能够以成本竞争方式达到上述目的的方法。
发明内容
[0008]我们已经设计出使用通常遭受相间隔离问题的焊料或者其它金属合金来形成连接的连接，即使没有消除相间隔离问题，但实质上减少了相间隔离问题。
[0009]我们的方法的一个方面涉及制造电触点的方法。该方法涉及：在电连接的位置设置阻隔材料，在阻隔材料上设置导电的接合金属，导电的接合金属具有扩散的可动成分，选择阻隔材料的体积和扩散的可动成分的体积，使得阻隔材料的体积至少是阻隔材料的体积和扩散的可动成分的体积的组合体积的20％。
[0010]另一个方面涉及电连接。电连接在两个触点之间具有导电的接合金属，设置于导电的接合金属至少一侧的阻隔材料，以及位于阻隔材料和导电的接合金属之间的交界面的合金。合金包括至少一些阻隔材料，至少一些接合金属，和可动材料。
[0011]另外的方面涉及一种设备。该设备包括在两个电触点之间的连接，该连接包括接合金属，阻隔材料和合金，该合金具有能够随着时间的过去相间隔离的可动组成成分，在200℃的温度下维持1000小时之后，该合金实质上没有经受过相间隔离。
[0012]在此说明的优点和特点是可从代表性实施例中获得的许多优点和特点中的一部分，并且仅是为帮助理解本发明而陈述的。应当了解这些优点和特点不被认为是对权利要求所限定的本发明的限制，或者是对权利要求的等同物的限制。例如，这些优点中的一些优点互相矛盾，因为它们不能同时存在于单个实施例中。类似地，一些优点可适用于本发明的一个方面，不适用于其他方面。因此，这些特点和优点的概括在确定等效性时不应当被认为是决定性的。本发明另外的特点和优点在以下说明中从附图和权利要求中变得显而易见。
附图说明
[0013]图1是就在回流之后的典型的焊球的横截面的照片；
[0014]图2是典型的焊球在150℃的温度下经过1000小时之后的横截面的放大照片；
[0015]图3是典型的焊料块在由于可动原子的电迁移已经发生相间隔离时的横截面的放大照片；
[0016]图4是实例的韧性触点的横截面的照片；
[0017]图5是在钉扎循环处理已经被完成之后刚性触点和韧性触点的横截面的照片；
[0018]图6是在熔合处理已经被完成之后刚性触点和韧性触点的横截面的照片；
[0019]图7是在熔合处理已经被完成之后芯片的类似图6的刚性触点和韧性触点的横截面的照片；以及
具体实施方式
[0020]本申请涉及与此同时申请的标题为“可循环热连接”的美国专利申请，其全部内容通过引用结合在本文中，如同在本文中全部陈述一样。
[0022]我们的方法涉及两个方面，每个方面可以单独使用或者可以彼此相结合使用。
[0023]第一个方面涉及在诸如焊料或者合金的接合金属下使用被称为阻隔物的材料，以束缚和/或吸引接合金属中的可动原子。这是通过选择合适的材料以及通过确保阻隔材料的接触面积和厚度(即体积)相对于焊料或者连接形成合金(以下通常被称为“接合金属”)是大的来完成的，在上述结合的申请中所述的柱和穿透连接的情况中，该材料将是韧性材料。
[0024]或者，就接合金属最易动的元素的体积可以被估计或者确定这方面来说，我们的方法只需要阻隔材料的体积相对于接合金属中最易动的成分的体积是大的，而不是相对于整个接合金属的体积。
[0025]在两种情况下都希望阻隔材料的体积至少大约是总体积的20％，或者至少是最易动的成分的体积的20％，优选是具有更高的百分比。注意，20％这个数字并不是严格的限制，而是期望需要确保束缚大多数可动原子。情况可以是接合金属和阻隔物的特定组合可以具有较少的限制。
[0026]通过一个代表性的实例，假定在两个匹配的触点的每一个上使用阻隔物，并且触点具有恒定的表面积，则高度可以代替体积。如果接合金属的总厚度大约是15□m或以下，则它的20％将大约是3□m，并且在每个触点上的阻隔材料的厚度大约是1.5□m。
[0027]在另一个代表性的实例中，涉及在两个匹配连接的每一个上的阻隔物，其中阻隔材料是如上述结合的申请中描述的韧性材料，如果在韧性材料的每一侧上的阻隔物将具有至少大约1.5□m的厚度，并且优选是大约2□m到3□m。由于存在两个阻隔物(在每一侧上有一个)，因此阻隔材料的总高度将大约在3□m和大约6□m之间。结果，使用20％的度量，韧性材料的总厚度应当小于15□m，并且在这种情形中，优选是大约9□m或以下。在这种情况下，如果阻隔物在一侧上是3□m并且韧性材料的厚度是9□m，则阻隔物相对于总体积的百分比在最小的大约20％(3□m/15□m)到大约67％(即，6□m/9□m)的范围内。
[0028]当然，如上所述，取决于用于阻隔物和接合金属的具体材料，最小的比率可能会略微更低，但不会相当低，只要满足上述标准即可。然而，由于更大体积的阻隔物在吸引和束缚方面只会更好，因此优选的是，将使用更好的比率。
[0029]例如，当我们使用Au75％/Sn25％到Au85％/Sn15％的金-锡合金作为接合金属并使用镍作为阻隔物时，我们已经特别发现事情就是如此。因此，应当认识到百分比越高越好，因为在许多实践中它们将可能获得更好的结果。
[0030]使用大体积的阻隔材料使得阻隔物以顺序的方式吸引和捕获或者吸收接合金属中的可动原子，从而即使没有完全防止，也能基本上减少相间隔离问题。而且，在吸收材料的过程中，典型的大约20％的最小比率确保阻隔物不会趋近“饱和”，或者在阻隔物在触点焊点之上的情况中，阻隔物不会被“穿透”。通常，一般不使用小于大约20％的阻隔物的理由是，在较低的百分比，阻隔物的较小体积不能吸引、捕获或者束缚可动材料的体积。因此，未被吸引、捕获或者束缚的可动材料将自由地迁移并在一起结块，从而导致现有技术中的相间隔离问题，尽管是潜在的较小的程度。
[0031]第二个方面涉及确保使阻隔物和接合金属中的原子之间的距离保持为较短。实际上，由于触点的宽度或者直径将较小，因此高度将是距离的最主要的因素。因而，接合金属的高度绝对值应当是小的。通过将接合金属的高度保持在大约20到25□m以下，并且优选的是，即使在大约15□m以下，典型的期望高度是从大约9□m到大约6□m，必须移动的可动材料的距离也将是短的，以便可动材料遇到阻隔物的可能性将比较大。例如，如果在连接的两侧上使用合适的阻隔物，则在25□m高的块中距离任一阻隔物最远的可动原子只需要移动一半的距离就能够到达阻隔物，即，只有12.5□m。因此，通过将总高度保持为较小，趋势是在连接阶段的加热部分期间，即在上述结合的申请中描述的钉扎&熔合处理的钉扎或熔合阶段，可动原子到达阻隔材料，并且阻隔材料快速地吸收可动原子，而不是在联接后留下可动材料在接合金属中自由地到处活动。
[0032]现在应当理解和领会的是，由于柱和穿透连接方法的特性，通过在韧性材料之下放置足够量的阻隔材料，上述方法特别适合于与那样的连接处理(如上所述)使用。而且，如果柱也被涂覆上足够的阻隔材料，则会增强该方法，这是因为当柱穿透进入韧性材料时，离子需要移动以到达阻隔材料的距离被减少。
[0033]通常，当使用本文中描述的方法时，合适的阻隔材料可以包括镍(Ni)、铬(Cr)、钛(Ti)、铂(Pt)、钯(Pd)、钽(Ta)、钨(W)，以及它们的合金或者它们分层的组合物。更具体地说，合适的阻隔物将是与接合金属的成分密切相关的那些金属或合金，该接合金属的成分具有比最高熔点成分低的熔点。例如，如果接合金属是Ga-In-Sn-Zn的合金，则从该合金中去除Zn和/或从该合金中去除Sn的阻隔物将使熔点上升，并且对某些实践将达到本文中的目标。
[0034]或者，能够被用来一起使用的或者作为阻隔物(也被称为盖)使用来增加成分并提高熔点的合适的材料是比接合金属的最低的熔点的成分具有更高熔点并可以与接合金属形成合金的那些材料。
[0035]通常，如同本文中图解的那样，对于所关心的特定合金的相位图的查看将便于适当的接合金属的选择。
[0036]下面的表1标识了能被用作接合金属的众多材料中的一些，并提供了一种不借助参考相位图来标识变化的熔点的方法。
[0037]表1包含在第一列中的近似的熔化温度，在第二列中的近似的凝固温度，并且在第三列中的具体的合适的接合金属。
  熔化温度   凝固温度   接合金属
  8℃   7℃   61％Ga/25％In/13％Sn/1％Zn
  11℃   11℃   62.5％Ga/21.5％In/16％Sn
  16℃   16℃   75.5％Ga/24.5％In
  25℃   16℃   95％Ga/5％In
  30℃   30℃   100％Ga
  43℃   38℃   42.9％Bi/21.7％Pb/18.3％In/8％Sn/5.1％Cd/4％Hg
  47℃   47℃   44.7％Bi/22.6％Pb/19.1％In/8.3％Sn/5.3％Cd
  52℃   47℃   44.7％Bi/22.6％Pb/16.1％In/11.3％Sn/5.3％Cd
  56℃   54℃   49.1％Bi/20.9％In/17.9％Pb/11.6％Sn/0.5％Cd
  58℃   58℃   49％Bi/21％In/18％Pb/12％Sn
  60℃   60℃   51％In/32.5％Bi/16.5％Sn
  62℃   62℃   61.7％In/30.8％Bi/7.5％Cd
  65℃   57℃   47.5％Bi/25.4％Pb/12.6％Sn/9.5％Cd/5％In
  65℃   61℃   48％Bi/25.6％Pb/12.8％Sn/9.6％Cd/4％In
  69℃   58℃   49％Bi/18％Pb/18％In/15％Sn
  70℃   70℃   50％Bi/26.7％Pb/13.3％Sn/10％Cd
  72℃   72℃   66.3％In/33.7％Bi
  73℃   70℃   50.5％Bi/27.8％Pb/12.4％Sn/9.3％Cd
  73℃   70℃   50％Bi/25％Pb/12.5％Sn/12.5％Cd
  73℃   70℃   50％Bi/25％Pb/12.5％Sn/12.5％Cd
  熔化温度   凝固温度   接合金属
  78℃   78℃   48.5％Bi/41.5％In/10％Cd
  78℃   70℃   50％Bi/34.5％Pb/9.3％Sn/6.2％Cd
  79℃   79℃   57％Bi/26％In/17％Sn
  81℃   81℃   54％Bi/29.7％In/16.3％Sn
  82℃   77℃   50％Bi/39％Pb/8％Cd/3％Sn
  85℃   81℃   50.3％Bi/39.2％Pb/8％Cd/1.5％In/1％Sn
  88℃   71℃   42.5％Bi/37.7％Pb/11.3％Sn/8.5％Cd
  89℃   80℃   50.3％Bi/39.2％Pb/8％Cd/1.5％Sn/1％In
  89℃   80℃   50.9％Bi/31.1％Pb/15％Sn/2％In/1％Cd
  91℃   87℃   51.1％Bi/39.8％Pb/8.1％Cd/1％In
  92℃   83℃   52％Bi/31.7％Pb/15.3％Sn/1％Cd
  92℃   92℃   51.6％Bi/40.2％Pb/8.2％Cd
  93℃   73℃   50％Bi/39％Pb/7％Cd/4％Sn
  93℃   87℃   51.4％Bi/31.4％Pb/15.2％Sn/2％In
  93℃   93℃   44％In/42％Sn/14％Cd
  94℃   90℃   52％Bi/31.7％Pb/15.3％Sn/1％In
  95℃   95℃   52.5％Bi/32％Pb/15.5％Sn
  96℃   95℃   52％Bi/32％Pb/16％Sn
  96℃   96℃   52％bi/30％Pb/18％Sn
  96℃   96℃   46％Bi/34％Sn/20％Pb
  99℃   93℃   50％Bi/31％Pb/19％Sn
  100℃   100℃   50％Bi/28％Pb/22％Sn
  102℃   70℃   40.5％Bi/27.8％Pb/22.4％Sn/9.3％Cd
  103℃   102℃   54％Bi/26％Sn/20％Cd
  104℃   95℃   56％Bi/22％Pb/22％Sn
  104℃   95℃   50％Bi/30％Pb/20％Sn
  105℃   70℃   35.3％Bi/35.1％Pb/20.1％Sn/9.5％Cd
  105℃   98℃   52.2％Bi/37.8％Pb/10％Sn
  107℃   96℃   45％Bi/35％Pb/20％Sn
  108℃   95℃   46％Bi/34％Pb/20％Sn
  108℃   102℃   54.5％Bi/39.5％Pb/6％Sn
  108℃   108℃   52.2％In/46％Sn/1.8％Zn
  109℃   109℃   67％Bi/33％In
  112℃   98℃   51.6％Bi/41.4％Pb/7％Sn
  113℃   72℃   40％Bi/33.4％Pb/13.3％Sn/13.3％Cd
  113℃   104℃   54.4％Bi/43.6％Pb/1％Sn/1％Cd
  115℃   95℃   50％Bi/25％Pb/25％Sn
  117℃   103℃   53％Bi/42.5％Pb/4.5％Sn
  118℃   75℃   38.2％Bi/31.7％Sn/26.4％Pb/2.6％Cd/1.1％Sb
  118℃   118℃   52％In/48％Sn
  119℃   108℃   53.7％Bi/43.1％Pb/3.2％Sn
  120℃   117℃   55％Bi/44％Pb/1％Sn
  121℃   92℃   56.8％Bi/41.2％Pb/2％Cd
  熔化温度   凝固温度   接合金属
  121℃   120℃   55％Bi/44％Pb/1％In
  123℃   70℃   46％Pb/30.7％Bi/18.2％Sn/5.1％Cd
  123℃   123℃   74％In/26％Cd
  124℃   124℃   55.5％Bi/44.5％Pb
  125℃   118℃   50％In/50％Sn//
  125℃   125℃   70％In/15％Sn/9.6％Pb/5.4％Cd
  126℃   124℃   58％Bi/42％Pb
  127℃   93℃   38％Pb/37％Bi/25％Sn
  129℃   95℃   51.6％Bi/37.4％Sn/6％In/5％Pb
  130℃   121℃   40％In/40％Sn/20％Pb
  131℃   118℃   52％Sn/48％In
  133℃   96℃   34％Pb/34％Sn/32％Bi
  133℃   128℃   56.8％Bi/41.2％Sn/2％Pb
  135℃   96℃   3B.4％Bi/30.8％Pb/30.8％Sn
  135℃   135℃   57.4％Bi/41.6％Sn/1％Pb
  136℃   95℃   36％Bi/32％Pb/31％Sn/1％Ag
  136℃   95℃   36.7％Bi/31.8％Pb/31.5％Sn
  136℃   121℃   55.1％Bi/39.9％Sn/5％Pb
  137℃   95℃   36.4％Bi/31.8％Pb/31.8％Sn
  137℃   96℃   43％Pb/28.5％Bi/28.5％Sn
  138℃   138℃   58％Bi/42％Sn
  139℃   96℃   38.4％Pb/30.8％Bi/30.8％Sn
  139℃   132℃   45％Sn/32％Pb/18％Cd/5％Bi
  140℃   139℃   57％Bi/42％Sn/1％Ag
  143℃   96℃   33.4％Bi/33.3％Pb/33.3％Sn
  143℃   143℃   97％In/3％Ag
  144℃   144℃   60％Bi/40％Cd
  145℃   118℃   58％Sn/42％In
  145℃   145℃   51.2％Sn/30.6％Pb/18.2％Cd
  150℃   125℃   95％In/5％Bi
  150℃   150℃   99.3％In/0.7％Ga
  151℃   143℃   90％In/10％Sn
  152℃   120℃   42％Pb/37％Sn/21％Bi
  152℃   140℃   54％Sn/26％Pb/20％In
  152℃   152℃   99.4％In/0.6％Ga
  153℃   153℃   99.6％In/0.4％Ga
  154℃   149℃   80％In/15％Pb/5％Ag
  160℃   122℃   54.5％Pb/45.5％Bi
  160℃   145℃   50％Sn/25％Cd/25％Pb
  162℃   140℃   48％Sn/36％Pb/16％Bi
  163℃   144℃   43％Sn/43％Pb/14％Bi
  167℃   120℃   50％Sn/40％Pb/10％Bi
  167℃   154℃   70％Sn/18％Pb/12％In
  熔化温度   凝固温度   接合金属
  170℃   131℃   51.5％Pb/27％Sn/21.5％Bi
  170℃   138℃   60％Sn/40％Bi
  172℃   166℃   49.7％Sn/41.8％Pb/8％Bi/0.5％Ag
  173℃   130℃   50％Pb/30％Sn/20％Bi
  173℃   160℃   46％Sn/46％Pb/8％Bi
  175℃   165℃   70％In/30％Pb
  176℃   146℃   47.5％Pb/39.9％Sn/12.6％Bi
  177℃   177℃   67.8％Sn/32.2％Cd
  179℃   179℃   62.5％Sn/36.1％Pb/1.4％Ag
  180℃   96℃   60％Sn/25.5％Bi/14.5％Pb
  181℃   134℃   37.5％Pb/37.5％Sn/25％In
  181℃   173℃   60％In/40％Pb
  182℃   178℃   62.6％Sn/37％Pb/0.4％Ag
  183℃   183℃   63％Sn/37％Pb
  183℃   183℃   62％Sn/38％Pb
  184℃   183℃   65％Sn/35％Pb
  186℃   174℃   86.5％Sn/5.5％Zn/4.5％In/3.5％Bi
  186℃   183℃   70％Sn/30％Pb
  187℃   175℃   77.2％Sn/20％In/2.8％Ag
  187℃   181℃   83.6％Sn/8.8％In/7.6％Zn
  189℃   179℃   61.5％Sn/35.5％Pb/3％Ag
  191℃   183℃   60％Sn/40％Pb
  192℃   183℃   75％Sn/25％Pb
  195℃   165℃   58％In/39％Pb/3％Ag
  197℃   170℃   55.5％Pb/40.5％Sn/4％Bi
  199℃   183℃   80％Sn/20％Pb
  199℃   199℃   91％Sn/9％Zn
  200℃   183℃   55％Sn/45％Pb
  205℃   183℃   85％Sn/15％Pb
  205℃   204℃   86.9％Sn/10％In/3.1％Ag
  210℃   177℃   55％Pb/44％Sn/1％Ag
  210℃   184℃   50％In/50％Pb
  212℃   183℃   50％Sn/50％Pb
  213℃   183℃   90％Sn/10％Pb
  213℃   211℃   91.8％Sn/4.8％Bi/3.4％Ag
  216℃   183℃   50％Sn/49.5％Pb/0.5％Sb
  217℃   217℃   90％Sn/10％Au
  218℃   183℃   52％Pb/48％Sn
  220℃   217℃   95.5％Sn/3.8％Ag/0.7％Cu
  220℃   217℃   95.5％Sn/3.9％Ag/0.6％Cu
  220℃   217℃   96.5％Sn/3％Ag/0.5％Cu
  221℃   221℃   96.5％Sn/3.5％Ag
  222℃   183℃   95％Sn/5％Pb
Figure A20088001662100131
  熔化温度   凝固温度   接合金属
  295℃   221℃   90％Sn/10％Ag
  295℃   252℃   95％Pb/5％Sb
  296℃   287℃   92.5％Pb/5％Sn/2.5％Ag
  300℃   227℃   97％Sn/3％Cu
  302℃   275℃   90％Pb/10％Sn
  302℃   275℃   89.5％Pb/10.5％Sn
  303℃   303℃   97.5％Pb/2.5％Ag
  304℃   299℃   95.5％Pb/2.5％Ag/2％Sn
  304℃   304℃   93％Pb/3％Sn/2％In/2％Ag
  309℃   309℃   97.5％Pb/1.5％Ag/1％Sn
  310℃   290℃   90％Pb/5％In/5％Ag
  310℃   300℃   92.5％Pb/5％In/2.5％Ag
  312℃   308℃   95％Pb/5％Sn
  313℃   300℃   95％Pb/5％In
  313℃   313℃   91％Pb/4％Sn/4％Ag/1％In
  315℃   315℃   98％Pb/1.2％Sb/0.8％Ga
  320℃   300℃   98％Pb/2％Sb
  322℃   310℃   98.5％Pb/1.5％Sb
  327℃   327℃   100％Pb
  330℃   231℃   98％Sn/2％As
  345℃   232℃   99％Sn/1％Ge
  356℃   356℃   88％Au/12％Ge
  363℃   363℃   96.8％Au/3.2％Si
  364℃   305℃   95％Pb/5％Ag
  365℃   304℃   94.5％Pb/5.5％Ag
  382℃   382℃   95％Zn/5％Al
  395℃   340℃   95％Cd/5％Ag
  424℃   424℃   55％Ge/45％Al
  465℃   451℃   75％Au/25％In
  485℃   451℃   82％Au/18％In
  525℃   525℃   45％Ag/38％Au/17％Ge
  577℃   577℃   88.3％Al/11.7％Si
  585℃   521℃   86％Al/10％Si/4％Cu
  610℃   577℃   92.5％Al/7.5％Si
  620℃   605℃   45％Ag/24％Cd/16％Zn/15％Cu
  630℃   577℃   95％Al/5％Si
  635℃   625℃   50％Ag/18％Cd/16.5％Zn/15.5％Cu
  650℃   620℃   56％Ag/22％Cu/17％Zn/5％Sn
  660℃   660℃   100％Al
  690℃   630℃   50％Ag/16％Cd/15.5％Cu/15.5％Zn/3％Ni
  700℃   605℃   35％Ag/26％Cu/21％Zn/18％Cd
  705℃   603℃   61％Ag/24％Cu/15％In
  705℃   640℃   80％Cu/15％Ag/5％P
  熔化温度   凝固温度   接合金属
  710℃   605℃   30％Ag/27％Cu/23％Zn/20％Cd
  720℃   600℃   60％Ag/30％Cu/10％Sn
  780℃   780℃   72％Ag/28％Cu
  785℃   775℃   71.5％Ag/28％Cu/0.5％Ni
  800℃   370℃   98％Au/2％Si
  800℃   690℃   63％Ag/28.5％Cu/6％Sn/2.5％Ni
  890℃   890℃   80％Au/20％Cu
  961℃   961℃   100％Ag
  985℃   665℃   85％Cu/8％Sn/7％Ag
  1020℃   1000℃   50％Au/50％Ag
  1030℃   360℃   99.4％Au/0.6％Sb
  1030℃   1025℃   99％Au/1％Ga
  1063℃   1063℃   99.8％Au/0.2％P
  1064℃   1064℃   100％Au
表1
[0038]因此，例如，96.8％Au/3.2％Si的二元接合金属在大约363℃熔化。使用阻隔物金属来捕获、形成合金或吸收尽可能多的Si将新的接合金属的熔化温度提升到接近100％Au的熔化温度(即接近它的1064℃的熔点)。对于诸如BiPbSn的三元化合物也是同样的。例如，50％Bi/25％Pb/12.5％Sn的接合金属具有73℃的熔化温度。使用将捕获、形成合金或者吸收Bi的阻隔物可以导致新的接合合金，例如，取决于Pb和Sn的具体浓度，是具有大约247℃到257℃的熔化温度的65％Pb/35％Sn或者70％Pb/30％Sn。
[0039]因此，一般地，将选择阻隔物和接合材料以便一旦加热至大约接合金属的熔化温度或以上时，会影响熔化温度的接合金属的成分(或多个成分)将：i)离开接合金属并以某种方式与阻隔物联接，如果在接合金属中的存在降低了接合金属的熔点，或者ii)加入接合金属中，如果在接合金属中的存在提高了接合金属的熔点，如果那个成分(或那些成分)对接合金属的加入。
[0040]图4到图6是上述方法的实例的横截面的照片。如图4到图6所示，该方法涉及结合钉扎和熔合处理的柱和穿透连接。
[0041]图4是实例的韧性触点400的横截面的照片。在该照片中，接合金属402是由被锡的层(100％Sn)406覆盖的纯金层(100％Au)404构成的韧性材料。镍(100％Ni)的阻隔物408位于金404和芯片触点焊点410之间。
[0042]对于柱和穿透方法，匹配的刚性触点是由芯片触点焊点顶部上的柱构成的。利用这个方法，可选地，柱被阻隔物覆盖。在合适的压力下，如果必要的话，在高温下，两个触点被集合在一起。刚性柱穿透锡的盖部并进入匹配的触点上的韧性材料。此后，例如，如果还使用钉扎和熔合方法，则可选地使触点经过钉扎周期。图5中显示了这个方法的实例结果。
[0043]图5是在钉扎循环处理已经被完成之后刚性触点和韧性触点400的联接柱502的横截面500的照片。可见，纯金(100％Au)404实质上的量保持在韧性触点的阻隔物附近，然而，锡和金层在纯金404和柱502之间的容积中已经形成金锡合金504。如图所示，金锡合金504大约是80％的金和20％的锡。
[0044]在此后的某些点处，触点经受熔合处理。在熔合处理期间，金和锡混合在一起以形成相对均匀的金-锡合金，并且一些锡被吸引到韧性触点上或者柱上的镍阻隔物并因此迁移到镍阻隔物，并与镍阻隔物结合。
[0045]图6是在钉扎和熔合处理的熔合阶段已经被完成之后，类似图5的刚性触点和韧性触点的横截面600的照片。作为熔合阶段的结果，最终结果是在两个触点604，606之间的纯金(大约98％Au)连接的基本上均匀的体积602。另外，已经在两个触点的阻隔物交界面610，612形成大约45％Au/35％Sn/20％Ni的合金608。这个合金608的形成使用了自由的锡原子，从而在阻隔物附近建立了被镍捕获的高锡内容区域，然而如上所述，锡的浓度在两个触点之间的中心是非常低的(大约2％)，这是因为在形成的合金608中，大多数锡已经被镍吸收和捕获。
[0046]有利的是，一旦阻隔物已经捕获了否则可能会迁移通过形成的合金608的材料，高温和时间的推移很少会导致相间隔离，这是因为可动材料的数量极其小。
[0047]图7是在熔合处理已经被完成之后，类似图6的芯片的刚性触点和韧性触点的横截面700的照片。连接的部分702的放大图显示没有相间隔离。
[0048]图8是在200℃经过1000小时之后，来自相同芯片的类似的刚性触点的韧性触点的横截面800的照片，其中部分802被进一步放大显示。通过比较照片的两个部分702，802可见，很明显高温和时间的推移都没有导致任何可见的相间隔离。为了避免任何误解或者混乱，图8中的黑色矩形是由于叠加在图像上的测量盒，而并不存在于图像的横截面上。很清楚，图8的触点800与紧接着完成钉扎和熔合处理的熔合循环看起来的样子本质上是没有变化的。
[0049]重要的是注意，虽然以上通常是参考分离的金和锡的“层”来描述的，但是应当理解为，也可以代替纯材料用合金或焊料作为接合金属和/或阻隔材料使用相同的方法，重要的方面是选择阻隔材料以便其吸收、结合或捕获原子，否则这些原子会迁移、结块或者通过相间隔离或电迁移建立空隙，或者会对接合金属提高或增加高熔点材料的浓度。
[0050]因此应当理解本说明书(包括附图)只是某些示例性的实施例的代表。为了方便读者，上述描述已经集中在所有可能的实施例的代表性实例上，教导本发明的原理的实例上。本说明书并没有试图穷举所有可能的变形例。可替代的实施例可能没有作为本发明的具体部分呈现，或者此外未描述的可替代的实施例可能是可作为一部分得到的，但是这并不被认为是对那些可替代的实施例的放弃。一个普通的技术人员应了解许多那些未描述的实施例结合了本发明的相同原理，并且其他的也是等同的。

Claims (17)

1.一种制造电触点的方法，其特征在于，包含：
在电连接的位置设置阻隔材料；
在所述阻隔材料上设置导电的接合金属，
所述导电的接合金属包含扩散的可动成分，
选择阻隔材料的体积和扩散的可动成分的体积，使得所述阻隔材料的体积至少是所述阻隔材料的体积和扩散的可动成分的体积的组合体积的20％；以及
将所述导电的接合金属联接至包含相容的导电的接合金属的另一个触点以形成所述电连接，其中所述扩散的可动成分的实质部分将与所述阻隔材料结合在一起。
2.如权利要求1所述的方法，其特征在于，所述联接包含：
形成柱和穿透连接。
3.如权利要求1所述的方法，其特征在于，在所述阻隔材料上设置所述导电的接合金属进一步包含：
将所述导电的接合金属的高度限制为小于25μm。
4.如权利要求1所述的方法，其特征在于，在所述阻隔材料上设置所述导电的接合金属进一步包含：
将所述导电的接合金属的高度限制为小于15μm。
5.如权利要求1所述的方法，其特征在于，在所述阻隔材料上设置所述导电的接合金属进一步包含：
将所述导电的接合金属的高度限制为小于9μm。
6.如权利要求1所述的方法，其特征在于，所述阻隔材料的体积在所述阻隔材料的体积和扩散的可动成分的体积的组合体积的20％和67％之间。
7.如权利要求1所述的方法，其特征在于，自形成所述连接至少经过1000小时以后，在所述连接中实质上将不会发生相迁移。
8.一种电连接，其特征在于，包含：
在两个触点之间的导电的接合金属；
设置于所述导电的接合金属的至少一侧的阻隔材料；以及
位于所述阻隔材料和所述导电的接合金属之间的交界面的合金，所述合金包含
至少一些所述阻隔材料，
至少一些可动材料，在将所述两个触点中的一个联接到所述两个触点中的另一个之前，所述可动材料已经是所述两个触点中的至少一个或者所述接合金属的一部分。
9.如权利要求8所述的电连接，其特征在于，部分所述可动材料在所述联接之前是所述接合金属之上的阻隔物的成分。
10.如权利要求8所述的电连接，其特征在于，所述接合金属包含金。
11.如权利要求8所述的电连接，其特征在于，所述阻隔材料包含镍(Ni)、铬(Cr)、钛(Ti)、铂(Pt)、钯(Pd)、钽(Ta)、或钨(W)中的至少一种。
12.如权利要求8所述的电连接，其特征在于，所述可动材料包含锡。
13.一种设备，其特征在于，包含：
在两个电触点之间的连接，所述连接包括接合金属，阻隔材料和合金，所述合金具有能够在形成所述连接之前相间隔离的可动组成成分，并且在所述连接已经形成并且在200℃的温度下维持1000小时之后，实质上没有经受过相间隔离。
14.如权利要求13所述的设备，其特征在于，所述合金包含：
至少一些阻隔材料，以及
至少一些接合金属。
15.一种形成电连接的方法，其特征在于，包含：
在一对电连接点之间
i)将具有组成成分的第一浓度的第一接合金属加热至至少大约所述第一接合金属的熔点，
ii)当根据i)加热所述第一接合金属时，接近所述第一接合金属设置能够与所述第一接合金属相互作用的材料，以便将组成成分的所述第一浓度改变成组成成分的第二浓度，使得所述第一接合金属将变成由组成成分的所述第二浓度构成的第二接合金属，所述第二接合金属具有高于所述第一接合金属的所述熔点的第二接合金属熔点，
将所述一对电连接点和第二接合金属冷却至所述第一接合金属的熔点以下。
16.如权利要求15所述的方法，其特征在于，进一步地包含：
iii)在所述冷却之后，将所述连接点和所述第二接合金属再加热至再加热温度，所述再加热温度等于或者大于所述第一接合金属的熔点，但是小于所述第二接合金属的熔点。
17.如权利要求15所述的方法，其特征在于，进一步地包含在芯片堆叠处理中重复iii)多次。
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