CN101663736B - 用于晶片无电镀的流体处理系统和相关的方法 - Google Patents

用于晶片无电镀的流体处理系统和相关的方法 Download PDF

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Publication number
CN101663736B
CN101663736B CN2008800123697A CN200880012369A CN101663736B CN 101663736 B CN101663736 B CN 101663736B CN 2008800123697 A CN2008800123697 A CN 2008800123697A CN 200880012369 A CN200880012369 A CN 200880012369A CN 101663736 B CN101663736 B CN 101663736B
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China
Prior art keywords
fluid
electroless plating
wafer
chamber
plating solution
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Expired - Fee Related
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CN2008800123697A
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English (en)
Chinese (zh)
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CN101663736A (zh
Inventor
威廉·蒂
约翰·M·博迪
弗里茨·C·雷德克
耶兹迪·多尔迪
约翰·帕克斯
蒂鲁吉拉伯利·阿鲁娜
亚历山大·奥夫恰茨
托德·巴力斯基
克林特·托马斯
雅各布·卫理
艾伦·M·舍普
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • C23C18/1628—Specific elements or parts of the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87571—Multiple inlet with single outlet
    • Y10T137/87652—With means to promote mixing or combining of plural fluids

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2008800123697A 2007-04-16 2008-04-11 用于晶片无电镀的流体处理系统和相关的方法 Expired - Fee Related CN101663736B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/735,989 US8844461B2 (en) 2007-04-16 2007-04-16 Fluid handling system for wafer electroless plating and associated methods
US11/735,989 2007-04-16
PCT/US2008/004759 WO2008130518A1 (en) 2007-04-16 2008-04-11 Fluid handling system for wafer electroless plating and associated methods

Publications (2)

Publication Number Publication Date
CN101663736A CN101663736A (zh) 2010-03-03
CN101663736B true CN101663736B (zh) 2012-03-21

Family

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Family Applications (1)

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CN2008800123697A Expired - Fee Related CN101663736B (zh) 2007-04-16 2008-04-11 用于晶片无电镀的流体处理系统和相关的方法

Country Status (6)

Country Link
US (1) US8844461B2 (enExample)
JP (1) JP2010525165A (enExample)
KR (1) KR101525265B1 (enExample)
CN (1) CN101663736B (enExample)
TW (1) TWI457171B (enExample)
WO (1) WO2008130518A1 (enExample)

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US20120260517A1 (en) * 2011-04-18 2012-10-18 Lam Research Corporation Apparatus and Method for Reducing Substrate Pattern Collapse During Drying Operations
CN103187338B (zh) * 2011-12-30 2015-08-19 无锡华瑛微电子技术有限公司 模块化半导体处理设备
CN103187240B (zh) * 2011-12-30 2016-06-01 无锡华瑛微电子技术有限公司 半导体处理设备
US9490149B2 (en) * 2013-07-03 2016-11-08 Lam Research Corporation Chemical deposition apparatus having conductance control
CN106463357B (zh) * 2014-05-15 2019-06-28 东京毅力科创株式会社 增加光致抗蚀剂分配系统中再循环和过滤的方法和设备
IT201800009071A1 (it) * 2018-10-01 2020-04-01 Rise Tech Srl Realizzazione di strutture multi-componente tramite menischi dinamici
DE112020004718T5 (de) 2019-10-01 2022-07-21 Elemental Scientific, Inc. Automatisierte Inline-Aufbereitung und Entgasung flüchtiger Proben zur Inline-Analyse
CN112779579B (zh) * 2019-11-06 2025-04-11 盛美半导体设备(上海)股份有限公司 电镀装置及清洗方法

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Also Published As

Publication number Publication date
CN101663736A (zh) 2010-03-03
JP2010525165A (ja) 2010-07-22
TW200906479A (en) 2009-02-16
US20080251148A1 (en) 2008-10-16
KR20090130133A (ko) 2009-12-17
WO2008130518A1 (en) 2008-10-30
KR101525265B1 (ko) 2015-06-02
US8844461B2 (en) 2014-09-30
TWI457171B (zh) 2014-10-21

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Termination date: 20160411