CN101649485A - 用于制造半导体材料的单晶的方法 - Google Patents

用于制造半导体材料的单晶的方法 Download PDF

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CN101649485A
CN101649485A CN200910165767A CN200910165767A CN101649485A CN 101649485 A CN101649485 A CN 101649485A CN 200910165767 A CN200910165767 A CN 200910165767A CN 200910165767 A CN200910165767 A CN 200910165767A CN 101649485 A CN101649485 A CN 101649485A
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CN101649485B (zh
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W·v·阿蒙
L·阿尔特曼绍夫尔
H·里曼
J·菲舍尔
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Abstract

本发明涉及用于制造半导体材料的单晶的方法，该方法包括：在具有由半导体材料组成的排出管的圆盘上利用第一感应加热线圈熔化半导体材料的颗粒；由熔化的颗粒形成熔体，其由该排出管以熔体颈和熔体腰的形式延伸至相界面；利用具有开口的第二感应加热线圈将热量输入熔体，该熔体颈穿过该开口；及熔体在相界面处结晶；其特征在于，将冷却气体送至该排出管及该熔体颈，以调节该排出管与该熔体颈之间界面的轴向位置。本发明还涉及用于实施该方法的设备。

Description

用于制造半导体材料的单晶的方法
技术领域
本发明涉及用于制造半导体材料的单晶的方法，其中在具有由半导体材料组成的排出管的圆盘上熔化半导体材料的颗粒，由熔化的颗粒形成的熔体从排出管以熔体颈和熔体腰的形式延伸至相界面，利用具有开口的感应加热线圈向熔体输入热量，熔体颈通过该开口，熔体在相界面处结晶。
背景技术
例如US 2003/145781A描述了该方法。该方法能够利用颗粒作为原料制造半导体材料的单晶。US 2003/145781 A的图4所示为适合于实施该方法的设备。在圆盘上熔化颗粒，在圆盘的中心具有延伸至排出管的通孔。设置在圆盘上方的第一感应加热线圈用于熔化颗粒。熔化的颗粒首先形成薄膜，并在该方法随后的过程中形成熔体，其在相界面处结晶，并由此使生长的单晶的体积增加。由新熔化的颗粒对应的体积补偿结晶的体积。熔体从排出管延伸至相界面，在相界面处生长单晶。其在排出管的范围内具有熔体颈的形状，该熔体颈穿过第二感应加热线圈的开口，并转变为位于生长的单晶上的更宽的熔体腰。借助于第二感应加热线圈将热量输入熔体，以控制单晶的生长。
因为排出管由半导体材料组成，所以若能量输入相应地高，则其可被第二感应加热线圈熔化。若由第二感应加热线圈提供的能量不足以保持排出管范围内的熔体为液态，则排出管会相反地向下生长。但是，排出管与熔体之间界面的位置无法在轴向上任意地即向上或向下长距离移动。若界面向上移动得过远，则因为排出管被熔化而增加熔体颈的体积，并导致熔体接触第二感应加热线圈或者熔体颈变得过细而断裂的危险。若界面向下移动得过远，则因为排出管在该方向上生长，导致排出管凝结及熔体流停止的危险。因为这两种情况阻止单晶进一步生长，所以均不允许发生。
发明内容
因此，本发明的目的在于改变该方法，从而能够更有效控制界面的轴向位置。
该目的是通过用于制造半导体材料的单晶的方法实现的，该方法包括：在具有由半导体材料组成的排出管的圆盘上利用第一感应加热线圈熔化半导体材料的颗粒；由熔化的颗粒形成熔体，其由排出管以熔体颈和熔体腰的形式延伸至相界面；利用具有开口的第二感应加热线圈将热量输入熔体，熔体颈穿过该开口；及熔体在相界面处结晶；其特征在于，将冷却气体送至排出管及熔体颈，以调节排出管与熔体颈之间界面的轴向位置。
此外，该目的是通过用于制造半导体材料的单晶的设备实现的，其包括以下特征：
用于接收半导体材料颗粒的圆盘，其中该圆盘在其中心具有延伸至排出管的开口；
用于熔化圆盘上的颗粒的第一感应加热线圈；
用于将能量输入由熔化的颗粒形成的熔体的第二感应加热线圈，其中第二感应加热线圈在其中心具有熔体的通孔；及
用于将气体受控制地导入由熔体形成的熔体颈与排出管相接触的区域内的装置。
附图说明
图1所示为特别适合于实施该方法的设备。
具体实施方式
来自漏斗14的颗粒13在可旋转的圆盘9上熔化，在圆盘的中心具有延伸至排出管11的通孔。设置在圆盘上方的第一感应加热线圈用于熔化颗粒13。第一感应加热线圈优选以如下方式设计，使经由线圈接线柱5供应的高频电流主要流过线圈架1和线段2。线段在其下端通过细棒3相互导电连接。线圈架1具有沿径向取向的导电缝隙，其迫使电流在蛇形路径上流过线圈架。以此方式确保圆盘表面的全部范围均匀地被电磁场覆盖。线圈架1在外部区域内具有至少一个通孔6，以将半导体材料的颗粒13送至旋转的圆盘9上。此外，第一感应加热线圈装配有冷却系统，其在线圈架1中包括冷却槽7，诸如水的冷却剂在冷却槽中流过。冷却槽与线段接触并经由管桥8相互连接，以强烈冷却线段2。管桥在线圈架1的上侧的中心达到线段2，并例如焊接或电焊在线段上。管桥8单重或多重缠绕，以具有足够高的电感。因此，高频电流主要流过与线段2相连的棒3，而不流过管桥8。由于电流流过，在棒范围内的场力线密度特别高，在制造单晶10时位于棒3的直接相对位置的部分熔体被特别有效地感应加热。在熔体和棒上优选具有相等的电势，特别优选具有相等的外壳电位。
圆盘9由与颗粒13相同的半导体材料组成，并优选以如下方式设计，例如DE 102 04 178 A1所述的容器，其内容物也明显地包括在内。但也可设计为具有中心排出管的单面的板。
在该方法中，熔化的颗粒形成熔体，其可被划分成连续的薄膜12、熔体颈18和熔体腰16。熔体在相界面4处结晶，在此生长的单晶10的体积增加。结晶的体积由新熔化的颗粒的对应体积加以补偿。熔体颈18从排出管11的下端延伸至熔体腰16，并穿过第二感应加热线圈15的开口。与熔体颈相比更宽的熔体腰16位于生长的单晶10上。借助于第二感应加热线圈15将热量输入熔体，以控制单晶10的生长。优选由强烈冷却的金属板组成的护罩19设置在感应加热线圈之间，以使它们相互电磁屏蔽。此外，护罩19冷却圆盘9的底部。
设计一种设备以实施本发明方法，该设备能够在排出管与熔体颈之间界面17的范围内受控制地将冷却气体送至排出管11和熔体颈18。在所示的实施方案中，该设备包括喷嘴20，优选为氩气的冷却气体通过喷嘴从侧向送至排出管11和熔体颈18。喷嘴20优选集成在第二感应加热线圈中。但也可安置在护罩19之中或之上。此外，该设备还包括用于光学检测界面17的轴向位置的相机21以及用于给喷嘴供应冷却气体的控制器22。相机、喷嘴和控制器相连形成控制回路。利用相机由排出管与熔体之间亮度的明显区别确定界面的轴向位置。优选为PID控制器(由比例控制器、积分控制器和微分控制器组成)的控制器取决于测定的界面17的位置控制通过喷嘴的气体体积流量。若界面17向上移动高于容许的上边界位置，则控制器提高体积流量，从而半导体材料由于增强的冷却作用而在排出管的末端凝固，并使排出管变长。结果是界面17向下移动。若界面17向下移动低于容许的下边界位置，则控制器减少体积流量，从而由于减弱的冷却作用而使排出管在其下端熔化。结果是界面向上移动。
从第二感应加热线圈15的中心至上下边界位置的距离优选不超过10mm，更优选不超过5mm。调节界面17的轴向位置，使得界面17优选保持在轴向长度小于20mm，更优选10mm的范围内。
可以通过将第二感应加热线圈15侧向移动而促进所述控制过程，从而相对于圆盘和单晶的旋转轴，熔体颈18不再轴对称地穿过第二感应加热线圈的开口。这一措施在单晶的直径变宽至最终直径的阶段是特别有利的。第二感应加热线圈距离熔体颈越近，则总的能量输入即输入熔体颈的总能量越多。在第二感应加热线圈接近熔体颈时，实现额外的能量输入，虽然在感应加热线圈侧向移动时至熔体颈一侧的距离缩短，但是同时至熔体颈相对一侧的距离变长。第二感应加热线圈从熔体颈轴对称地穿过线圈开口的位置向熔体颈侧向移动，这定性地等同于减少通过喷嘴的冷却气体的体积流量的作用。
实施例：
在根据图1的设备中，制造多个直径为70mm、105mm和150mm的硅单晶，以证明本发明的实现。

Claims (5)

1、用于制造半导体材料的单晶的方法，该方法包括：
在具有由半导体材料组成的排出管的圆盘上利用第一感应加热线圈熔化半导体材料的颗粒；
由熔化的颗粒形成熔体，其由所述排出管以熔体颈和熔体腰的形式延伸至相界面；
利用具有开口的第二感应加热线圈将热量输入所述熔体，所述熔体颈穿过所述开口；及
熔体在相界面处结晶；
其特征在于，将冷却气体送至所述排出管及所述熔体颈，以调节该排出管与该熔体颈之间界面的轴向位置。
2、根据权利要求1的方法，其特征在于，调节所述界面的轴向位置，使得所述界面保持在轴向长度小于20mm的范围内。
3、根据权利要求1或2的方法，其特征在于，通过向所述熔体颈移动所述第二感应加热线圈而轴向改变所述界面的轴向位置。
4、用于制造半导体材料的单晶的设备，其包括：
用于接收半导体材料颗粒的圆盘，该圆盘在其中心具有延伸至排出管的开口；
用于熔化该圆盘上的颗粒的第一感应加热线圈；
用于将能量输入由熔化的颗粒形成的熔体的第二感应加热线圈，该第二感应加热线圈在其中心具有熔体的通孔；及
用于将气体受控制地导入由熔体形成的熔体颈与所述排出管相接触的区域内的装置。
5、根据权利要求4的设备，其特征在于，所述用于受控制地导入气体的装置包括相机、控制器和喷嘴。
CN2009101657679A 2008-08-13 2009-08-13 用于制造半导体材料的单晶的方法 Expired - Fee Related CN101649485B (zh)

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