JP5211136B2 - 顆粒を再溶融させることによってシリコンから成る単結晶を製造するための装置 - Google Patents
顆粒を再溶融させることによってシリコンから成る単結晶を製造するための装置 Download PDFInfo
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- JP5211136B2 JP5211136B2 JP2010238315A JP2010238315A JP5211136B2 JP 5211136 B2 JP5211136 B2 JP 5211136B2 JP 2010238315 A JP2010238315 A JP 2010238315A JP 2010238315 A JP2010238315 A JP 2010238315A JP 5211136 B2 JP5211136 B2 JP 5211136B2
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- Prior art keywords
- induction heating
- heating coil
- plate
- silicon
- upper layer
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/34—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater flexible, e.g. heating nets or webs
- H05B3/36—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater flexible, e.g. heating nets or webs heating conductor embedded in insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
Description
Claims (7)
- 顆粒を再溶融させることによってシリコンから成る単結晶を製造するための装置において、
シリコンから成る回転するプレートが設けられており、該プレートが、中央の開口と、該開口を包囲しておりかつプレートの下方に延びたシリコンから成る管状延長部とを有しており、
顆粒を溶融させるための、プレートの上方に配置された第1の誘導加熱コイルが設けられており、
溶融した顆粒を結晶化するための、プレートの下方に配置された第2の誘導加熱コイルが設けられており、該第2の誘導加熱コイルが、シリコンから成るプレートと向き合った側において透磁性材料から成る下側層と、上側層とを有しており、該上側層に、冷媒を流通させるための少なくとも1つの冷却チャネルが設けられていることを特徴とする、顆粒を再溶融させることによってシリコンから成る単結晶を製造するための装置。 - 前記下側層が、強磁性プラスチックから成る、請求項1記載の装置。
- 前記上側層が、金属材料から成る、請求項1又は2記載の装置。
- 前記第2の誘導加熱コイル及び前記上側層が、銀又は銅から成る、請求項1から3までのいずれか1項記載の装置。
- 前記第2の誘導加熱コイルが、冷媒を流通させるための少なくとも1つの冷却チャネルを有する、請求項1から4までのいずれか1項記載の装置。
- 前記上側層が、第2の誘導加熱コイルに設けられた内側孔の領域における縁部おいて、第2の誘導加熱コイルの給電ラインとは反対側に、切欠きを有しており、第2の誘導加熱コイルが、プレートの管状延長部及び隣接する領域をガスで冷却するための少なくとも1つのノズルを有する、請求項1から5までのいずれか1項記載の装置。
- 前記上側層が、プレートと向き合った側において黒化されている、請求項1から6までのいずれか1項記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200910051010 DE102009051010B4 (de) | 2009-10-28 | 2009-10-28 | Vorrichtung zur Herstellung eines Einkristalls aus Silizium durch Umschmelzen von Granulat |
DE102009051010.9 | 2009-10-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011093793A JP2011093793A (ja) | 2011-05-12 |
JP5211136B2 true JP5211136B2 (ja) | 2013-06-12 |
Family
ID=43086802
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010238315A Expired - Fee Related JP5211136B2 (ja) | 2009-10-28 | 2010-10-25 | 顆粒を再溶融させることによってシリコンから成る単結晶を製造するための装置 |
Country Status (9)
Country | Link |
---|---|
US (1) | US20110095018A1 (ja) |
EP (1) | EP2319961B1 (ja) |
JP (1) | JP5211136B2 (ja) |
KR (1) | KR101273874B1 (ja) |
CN (1) | CN102051671B (ja) |
DE (1) | DE102009051010B4 (ja) |
DK (1) | DK2319961T3 (ja) |
SG (2) | SG189727A1 (ja) |
TW (1) | TWI424100B (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010006724B4 (de) | 2010-02-03 | 2012-05-16 | Siltronic Ag | Verfahren zur Herstellung eines Einkristalls aus Silizium unter Verwendung von geschmolzenem Granulat |
FR2978060B1 (fr) * | 2011-07-21 | 2016-02-12 | Commissariat Energie Atomique | Procede et dispositif de mise en contact sans melange et a haute temperature de deux liquides non miscibles avec chauffage et brassage par induction |
DE102011089429A1 (de) | 2011-12-21 | 2013-06-27 | Siltronic Ag | Verfahren und Vorrichtung zur Herstellung eines Einkristalls |
DE102012213506A1 (de) | 2012-07-31 | 2014-02-06 | Siltronic Ag | Verfahren zur Herstellung eines Einkristalls aus Silizium |
DE102012213715A1 (de) | 2012-08-02 | 2014-02-06 | Siltronic Ag | Vorrichtung zur Herstellung eines Einkristalls durch Kristallisieren des Einkristalls an einer Schmelzenzone |
DE102012215677B3 (de) | 2012-09-04 | 2013-10-10 | Siltronic Ag | Verfahren zum Herstellen eines Einkristalls aus Silizium |
CN104837769B (zh) * | 2012-12-11 | 2017-08-08 | 赫姆洛克半导体运营有限责任公司 | 形成和分析掺杂硅的方法 |
US9580327B2 (en) * | 2014-02-11 | 2017-02-28 | Rec Silicon Inc | Method and apparatus for consolidation of granular silicon and measuring non-metals content |
DE102014207149A1 (de) * | 2014-04-14 | 2015-10-29 | Siltronic Ag | Vorrichtung und Verfahren zur Herstellung eines Einkristalls aus Silizium |
DE102014210936B3 (de) | 2014-06-06 | 2015-10-22 | Siltronic Ag | Vorrichtung und Verfahren zur Herstellung eines Kristalls aus Halbleitermaterial |
DE102015215858B4 (de) * | 2015-08-20 | 2019-01-24 | Siltronic Ag | Verfahren zur Wärmebehandlung von Granulat aus Silizium, Granulat aus Silizium und Verfahren zur Herstellung eines Einkristalls aus Silizium |
EP3208366A1 (en) | 2016-02-16 | 2017-08-23 | Siltronic AG | Fz silicon and method to prepare fz silicon |
DE102018210317A1 (de) * | 2018-06-25 | 2020-01-02 | Siltronic Ag | Verfahren zur Herstellung eines Einkristalls aus Halbleitermaterial gemäß der FZ-Methode, Vorrichtung zur Durchführung des Verfahrens und Halbleiterscheibe aus Silizium |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5845894A (ja) * | 1981-09-11 | 1983-03-17 | 旭化成株式会社 | トリミング装置 |
US4486641A (en) | 1981-12-21 | 1984-12-04 | Ruffini Robert S | Inductor, coating and method |
DE3226713A1 (de) * | 1982-07-16 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Als flachspule ausgebildete induktionsheizspule zum tiegelfreien zonenschmelzen |
US4755783A (en) * | 1986-11-18 | 1988-07-05 | Rogers Corporation | Inductive devices for printed wiring boards |
JPS6448391A (en) * | 1987-04-27 | 1989-02-22 | Shinetsu Handotai Kk | Single winding induction heating coil used in floating zone melting method |
US5108720A (en) * | 1991-05-20 | 1992-04-28 | Hemlock Semiconductor Corporation | Float zone processing of particulate silicon |
JP3053958B2 (ja) * | 1992-04-10 | 2000-06-19 | 光弘 丸山 | 浮遊帯溶融法による結晶の製造装置 |
DE19503357A1 (de) * | 1995-02-02 | 1996-08-08 | Wacker Siltronic Halbleitermat | Vorrichtung zur Herstellung eines Einkristalls |
DE19538020A1 (de) * | 1995-10-12 | 1997-04-17 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zur Herstellung von Einkristallen aus Silicium |
DE19617870A1 (de) * | 1996-04-24 | 1997-12-11 | Forschungsverbund Berlin Ev | Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleiterstäben unter Magnetfeldeinfluß |
JP3644227B2 (ja) * | 1997-12-22 | 2005-04-27 | 信越半導体株式会社 | シリコン単結晶の製造方法及び製造装置 |
DE10204178B4 (de) * | 2002-02-01 | 2008-01-03 | Siltronic Ag | Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Halbleitermaterial |
DE102006060359B4 (de) * | 2006-12-20 | 2013-09-05 | Siltronic Ag | Verfahren und Vorrichtung zur Herstellung von Halbleiterscheiben aus Silicium |
DE102008013326B4 (de) | 2008-03-10 | 2013-03-28 | Siltronic Ag | Induktionsheizspule und Verfahren zum Schmelzen von Granulat aus Halbleitermaterial |
-
2009
- 2009-10-28 DE DE200910051010 patent/DE102009051010B4/de not_active Withdrawn - After Issue
-
2010
- 2010-09-21 CN CN2010102941711A patent/CN102051671B/zh not_active Expired - Fee Related
- 2010-10-04 KR KR1020100096469A patent/KR101273874B1/ko active IP Right Grant
- 2010-10-08 SG SG2013024120A patent/SG189727A1/en unknown
- 2010-10-08 SG SG201007383-1A patent/SG170684A1/en unknown
- 2010-10-14 TW TW99135024A patent/TWI424100B/zh not_active IP Right Cessation
- 2010-10-22 EP EP20100188589 patent/EP2319961B1/de not_active Not-in-force
- 2010-10-22 DK DK10188589T patent/DK2319961T3/da active
- 2010-10-25 JP JP2010238315A patent/JP5211136B2/ja not_active Expired - Fee Related
- 2010-10-25 US US12/910,906 patent/US20110095018A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
DK2319961T3 (da) | 2014-07-14 |
EP2319961B1 (de) | 2014-04-16 |
TWI424100B (zh) | 2014-01-21 |
CN102051671B (zh) | 2013-02-13 |
DE102009051010A1 (de) | 2011-05-12 |
US20110095018A1 (en) | 2011-04-28 |
TW201129729A (en) | 2011-09-01 |
JP2011093793A (ja) | 2011-05-12 |
DE102009051010B4 (de) | 2012-02-23 |
KR20110046270A (ko) | 2011-05-04 |
SG170684A1 (en) | 2011-05-30 |
KR101273874B1 (ko) | 2013-06-11 |
SG189727A1 (en) | 2013-05-31 |
CN102051671A (zh) | 2011-05-11 |
EP2319961A1 (de) | 2011-05-11 |
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