CN101619444A - 铜溅射靶材料和溅射法 - Google Patents
铜溅射靶材料和溅射法 Download PDFInfo
- Publication number
- CN101619444A CN101619444A CN200910146299A CN200910146299A CN101619444A CN 101619444 A CN101619444 A CN 101619444A CN 200910146299 A CN200910146299 A CN 200910146299A CN 200910146299 A CN200910146299 A CN 200910146299A CN 101619444 A CN101619444 A CN 101619444A
- Authority
- CN
- China
- Prior art keywords
- copper
- face
- sputtering target
- target material
- sputter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
Abstract
Description
(111)面的占有率(%) | 氧含量(ppm) | (评价方法1)拉伸残留压力(N/mm2) | (评价方法2)膜剥离的有无 | (评价方法3)气孔的有无 | |
实施例1 | 25.7 | 2 | 112 | 无 | 无 |
实施例2 | 15.0 | 2 | 120 | 无 | 无 |
实施例3 | 20.0 | 2 | 115 | 无 | 无 |
比较例1 | 14.6 | 2 | 123 | 有 | 无 |
比较例2 | 7.6 | 2 | 125 | 有 | 无 |
比较例3 | 4.6 | 2 | 139 | 有 | 无 |
比较例4 | 25.0 | 10 | 114 | 无 | 有 |
Claims (8)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008172718 | 2008-07-01 | ||
JP2008-172718 | 2008-07-01 | ||
JP2008172718A JP5092939B2 (ja) | 2008-07-01 | 2008-07-01 | Tft用平板型銅スパッタリングターゲット材及びスパッタリング方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2012102848529A Division CN102816996A (zh) | 2008-07-01 | 2009-06-30 | 铜溅射靶材料和溅射法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101619444A true CN101619444A (zh) | 2010-01-06 |
CN101619444B CN101619444B (zh) | 2014-03-12 |
Family
ID=41463508
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2012102848529A Pending CN102816996A (zh) | 2008-07-01 | 2009-06-30 | 铜溅射靶材料和溅射法 |
CN200910146299.0A Active CN101619444B (zh) | 2008-07-01 | 2009-06-30 | 铜溅射靶材料和溅射法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2012102848529A Pending CN102816996A (zh) | 2008-07-01 | 2009-06-30 | 铜溅射靶材料和溅射法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20100000857A1 (zh) |
JP (1) | JP5092939B2 (zh) |
CN (2) | CN102816996A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105473755A (zh) * | 2014-04-11 | 2016-04-06 | 三菱综合材料株式会社 | 圆筒型溅射靶用原材料的制造方法 |
CN103173729B (zh) * | 2011-12-26 | 2016-09-07 | 株式会社Sh铜业 | 溅射用铜靶材的制造方法 |
CN110578126A (zh) * | 2019-10-18 | 2019-12-17 | 洛阳高新四丰电子材料有限公司 | 一种多规格高纯铜靶材的制备方法 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030002043A1 (en) * | 2001-04-10 | 2003-01-02 | Kla-Tencor Corporation | Periodic patterns and technique to control misalignment |
US20080078268A1 (en) | 2006-10-03 | 2008-04-03 | H.C. Starck Inc. | Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof |
US20080145688A1 (en) | 2006-12-13 | 2008-06-19 | H.C. Starck Inc. | Method of joining tantalum clade steel structures |
US8197894B2 (en) | 2007-05-04 | 2012-06-12 | H.C. Starck Gmbh | Methods of forming sputtering targets |
US8246903B2 (en) | 2008-09-09 | 2012-08-21 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
US9441289B2 (en) * | 2008-09-30 | 2016-09-13 | Jx Nippon Mining & Metals Corporation | High-purity copper or high-purity copper alloy sputtering target, process for manufacturing the sputtering target, and high-purity copper or high-purity copper alloy sputtered film |
KR101058765B1 (ko) | 2008-09-30 | 2011-08-24 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 고순도 구리 및 전해에 의한 고순도 구리의 제조 방법 |
JP5723171B2 (ja) | 2011-02-04 | 2015-05-27 | 株式会社神戸製鋼所 | Al基合金スパッタリングターゲット |
US9412568B2 (en) | 2011-09-29 | 2016-08-09 | H.C. Starck, Inc. | Large-area sputtering targets |
JP5567042B2 (ja) * | 2012-02-10 | 2014-08-06 | 株式会社Shカッパープロダクツ | Tft用銅スパッタリングターゲット材 |
TWI582254B (zh) * | 2012-03-09 | 2017-05-11 | Furukawa Electric Co Ltd | Sputtering target |
JP6182296B2 (ja) * | 2012-03-09 | 2017-08-16 | 古河電気工業株式会社 | スパッタリングターゲット、及び、その製造方法 |
CN102703869A (zh) * | 2012-05-30 | 2012-10-03 | 深圳市华星光电技术有限公司 | 制备tft-lcd阵列基板铜导线用靶材的方法及靶材 |
CN111235536B (zh) * | 2020-03-17 | 2021-11-12 | 贵研铂业股份有限公司 | 一种晶粒高定向取向的铱溅射靶材及其制备方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10195611A (ja) * | 1996-12-27 | 1998-07-28 | Dowa Mining Co Ltd | 結晶方位の制御されたfcc金属及びその製造方法 |
US6197134B1 (en) * | 1997-01-08 | 2001-03-06 | Dowa Mining Co., Ltd. | Processes for producing fcc metals |
JP3403918B2 (ja) * | 1997-06-02 | 2003-05-06 | 株式会社ジャパンエナジー | 高純度銅スパッタリングタ−ゲットおよび薄膜 |
US6192969B1 (en) * | 1999-03-22 | 2001-02-27 | Asarco Incorporated | Casting of high purity oxygen free copper |
JP2001049426A (ja) * | 1999-07-08 | 2001-02-20 | Praxair St Technol Inc | 銅スパッタ・ターゲットの製造方法および銅スパッタ・ターゲットと裏当て板の組立体 |
US6478902B2 (en) * | 1999-07-08 | 2002-11-12 | Praxair S.T. Technology, Inc. | Fabrication and bonding of copper sputter targets |
EP1471164B1 (en) * | 2002-01-30 | 2013-01-23 | JX Nippon Mining & Metals Corporation | Copper alloy sputtering target and method for manufacturing the target |
US6896748B2 (en) * | 2002-07-18 | 2005-05-24 | Praxair S.T. Technology, Inc. | Ultrafine-grain-copper-base sputter targets |
US20040060812A1 (en) * | 2002-09-27 | 2004-04-01 | Applied Materials, Inc. | Method for modulating stress in films deposited using a physical vapor deposition (PVD) process |
CN101151398B (zh) * | 2005-03-28 | 2012-06-27 | Jx日矿日石金属株式会社 | 深锅状铜溅射靶及其制造方法 |
-
2008
- 2008-07-01 JP JP2008172718A patent/JP5092939B2/ja active Active
-
2009
- 2009-06-30 CN CN2012102848529A patent/CN102816996A/zh active Pending
- 2009-06-30 US US12/494,959 patent/US20100000857A1/en not_active Abandoned
- 2009-06-30 CN CN200910146299.0A patent/CN101619444B/zh active Active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103173729B (zh) * | 2011-12-26 | 2016-09-07 | 株式会社Sh铜业 | 溅射用铜靶材的制造方法 |
CN105473755A (zh) * | 2014-04-11 | 2016-04-06 | 三菱综合材料株式会社 | 圆筒型溅射靶用原材料的制造方法 |
CN105473755B (zh) * | 2014-04-11 | 2017-05-17 | 三菱综合材料株式会社 | 圆筒型溅射靶用原材料的制造方法 |
US9982335B2 (en) | 2014-04-11 | 2018-05-29 | Mitsubishi Materials Corporation | Manufacturing method of cylindrical sputtering target material |
CN110578126A (zh) * | 2019-10-18 | 2019-12-17 | 洛阳高新四丰电子材料有限公司 | 一种多规格高纯铜靶材的制备方法 |
CN110578126B (zh) * | 2019-10-18 | 2021-12-28 | 洛阳高新四丰电子材料有限公司 | 一种多规格高纯铜靶材的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2010013678A (ja) | 2010-01-21 |
CN102816996A (zh) | 2012-12-12 |
JP5092939B2 (ja) | 2012-12-05 |
US20100000857A1 (en) | 2010-01-07 |
CN101619444B (zh) | 2014-03-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SH COPPER INDUSTRY CO., LTD. Free format text: FORMER OWNER: HITACHI CABLE CO., LTD. Effective date: 20130829 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20130829 Address after: Ibaraki Applicant after: Sh Copper Products Co Ltd Address before: Tokyo, Japan, Japan Applicant before: Hitachi Cable Co., Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210415 Address after: Osaka Japan Patentee after: NEOMAX MAT Co.,Ltd. Address before: Ibaraki Patentee before: SH Copper Co.,Ltd. |