CN101599464B - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN101599464B
CN101599464B CN200910141555.7A CN200910141555A CN101599464B CN 101599464 B CN101599464 B CN 101599464B CN 200910141555 A CN200910141555 A CN 200910141555A CN 101599464 B CN101599464 B CN 101599464B
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China
Prior art keywords
semiconductor layer
layer
impurity
single crystal
crystal semiconductor
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Expired - Fee Related
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CN200910141555.7A
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English (en)
Chinese (zh)
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CN101599464A (zh
Inventor
加藤翔
鸟海聪志
井坂史人
大沼英人
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN101599464A publication Critical patent/CN101599464A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
CN200910141555.7A 2008-06-06 2009-06-04 半导体装置的制造方法 Expired - Fee Related CN101599464B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008149716 2008-06-06
JP2008-149716 2008-06-06
JP2008149716 2008-06-06

Publications (2)

Publication Number Publication Date
CN101599464A CN101599464A (zh) 2009-12-09
CN101599464B true CN101599464B (zh) 2013-10-16

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CN200910141555.7A Expired - Fee Related CN101599464B (zh) 2008-06-06 2009-06-04 半导体装置的制造方法

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US (2) US7951656B2 (https=)
JP (1) JP5559984B2 (https=)
CN (1) CN101599464B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7951656B2 (en) * 2008-06-06 2011-05-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8338218B2 (en) * 2008-06-26 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device module and manufacturing method of the photoelectric conversion device module
JP5415853B2 (ja) 2009-07-10 2014-02-12 東京エレクトロン株式会社 表面処理方法
DE102014005339B4 (de) * 2014-01-28 2022-06-09 Wolfgang B. Thörner Verfahren zur Herstellung eines Kontaktelements
KR101781175B1 (ko) * 2015-08-31 2017-09-22 가천대학교 산학협력단 초박막 저결정성 실리콘 채널을 갖는 무접합 전계효과 트랜지스터 및 그 제조방법
DE112021004634T5 (de) * 2020-10-30 2023-07-20 Fanuc Corporation LASERSCHWEIßVERFAHREN FÜR EIN WERKSTÜCK

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CN1851930A (zh) * 2006-04-11 2006-10-25 北京大学深圳研究生院 一种部分耗尽的soi mos晶体管及其制作方法

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EP0747935B1 (en) 1990-08-03 2004-02-04 Canon Kabushiki Kaisha Process for preparing an SOI-member
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JPH0644638A (ja) 1992-07-24 1994-02-18 Sony Corp 録音装置
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JP3352340B2 (ja) * 1995-10-06 2002-12-03 キヤノン株式会社 半導体基体とその製造方法
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JPH11163363A (ja) 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2000012864A (ja) * 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP3358550B2 (ja) 1998-07-07 2002-12-24 信越半導体株式会社 Ｓｏｉウエーハの製造方法ならびにこの方法で製造されるｓｏｉウエーハ
JP2000124092A (ja) * 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
JP2000150940A (ja) 1998-11-18 2000-05-30 Denso Corp 半導体微粒子集合体及びその製造方法
JP4553423B2 (ja) * 1999-09-16 2010-09-29 株式会社Ｓｕｍｃｏ Ｓｏｉウェーハおよびその製造方法
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JP3513592B2 (ja) * 2000-09-25 2004-03-31 独立行政法人産業技術総合研究所 太陽電池の製造方法
US6371037B1 (en) * 2000-12-26 2002-04-16 Fred C. Cook Sail furling system
JP2002348198A (ja) 2001-05-28 2002-12-04 Nissin Electric Co Ltd 半導体素子エピタキシャル成長用基板及びその製造方法
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JP2004281805A (ja) * 2003-03-17 2004-10-07 Sumitomo Mitsubishi Silicon Corp 半導体ウェーハの平坦化処理方法
JP2005268682A (ja) 2004-03-22 2005-09-29 Canon Inc 半導体基材及び太陽電池の製造方法
JP2007220782A (ja) * 2006-02-15 2007-08-30 Shin Etsu Chem Co Ltd Ｓｏｉ基板およびｓｏｉ基板の製造方法
JP2008112847A (ja) * 2006-10-30 2008-05-15 Shin Etsu Chem Co Ltd 単結晶シリコン太陽電池の製造方法及び単結晶シリコン太陽電池
US7678668B2 (en) * 2007-07-04 2010-03-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of SOI substrate and manufacturing method of semiconductor device
US7951656B2 (en) * 2008-06-06 2011-05-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234853A (en) * 1990-03-05 1993-08-10 Fujitsu Limited Method of producing a high voltage MOS transistor
CN1851930A (zh) * 2006-04-11 2006-10-25 北京大学深圳研究生院 一种部分耗尽的soi mos晶体管及其制作方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开平10-335683A 1998.12.18

Also Published As

Publication number Publication date
JP5559984B2 (ja) 2014-07-23
US7951656B2 (en) 2011-05-31
CN101599464A (zh) 2009-12-09
JP2010016355A (ja) 2010-01-21
US20090305469A1 (en) 2009-12-10
US8173496B2 (en) 2012-05-08
US20110129969A1 (en) 2011-06-02

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