CN101591343B - 二氧杂蒽嵌蒽化合物以及半导体装置 - Google Patents

二氧杂蒽嵌蒽化合物以及半导体装置 Download PDF

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Publication number
CN101591343B
CN101591343B CN200910143041.5A CN200910143041A CN101591343B CN 101591343 B CN101591343 B CN 101591343B CN 200910143041 A CN200910143041 A CN 200910143041A CN 101591343 B CN101591343 B CN 101591343B
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Prior art keywords
xanthene
gate
dioxaanthanthrene
hydrogen
substituent
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Chinese (zh)
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CN101591343A (zh
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小林典仁
佐佐木真理
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Sony Corp
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Sony Corp
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D493/00—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
    • C07D493/02—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
    • C07D493/06—Peri-condensed systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
CN200910143041.5A 2008-05-26 2009-05-25 二氧杂蒽嵌蒽化合物以及半导体装置 Expired - Fee Related CN101591343B (zh)

Applications Claiming Priority (3)

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JP2008136292 2008-05-26
JP2008136292 2008-05-26
JP2008-136292 2008-05-26

Publications (2)

Publication Number Publication Date
CN101591343A CN101591343A (zh) 2009-12-02
CN101591343B true CN101591343B (zh) 2014-06-18

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Country Status (4)

Country Link
US (1) US20090289248A1 (https=)
JP (1) JP5470935B2 (https=)
CN (1) CN101591343B (https=)
TW (1) TW201002721A (https=)

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* Cited by examiner, † Cited by third party
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JP2011012001A (ja) * 2009-07-01 2011-01-20 Sony Corp アンタントレン系化合物及び半導体装置
JP5573219B2 (ja) * 2010-02-18 2014-08-20 ソニー株式会社 薄膜トランジスタ、ならびに電子機器およびその製造方法
JP5666259B2 (ja) 2010-03-31 2015-02-12 富士フイルム株式会社 放射線撮像装置
JP5494295B2 (ja) * 2010-06-30 2014-05-14 日本ゼオン株式会社 重合性化合物、重合性組成物、高分子及び半導体装置
JP5616146B2 (ja) * 2010-07-05 2014-10-29 山本化成株式会社 有機トランジスタ
JP5454394B2 (ja) 2010-07-09 2014-03-26 ソニー株式会社 光電変換素子及び固体撮像装置
JP2012019131A (ja) 2010-07-09 2012-01-26 Sony Corp 光電変換素子及び固体撮像装置
US9123902B2 (en) 2011-02-10 2015-09-01 Samsung Electronics Co., Ltd. Semiconductor compound
US8420440B2 (en) 2011-02-10 2013-04-16 Xerox Corporation Semiconducting composition
US9123899B2 (en) 2011-02-10 2015-09-01 Samsung Electronics Co., Ltd. Semiconductor compound
JP2012209485A (ja) 2011-03-30 2012-10-25 Sony Corp 有機素子の製造方法、有機分子結晶層の接合方法、細線状導電体の製造方法、有機素子および細線状導電体
JP5807738B2 (ja) * 2011-03-30 2015-11-10 ソニー株式会社 有機トランジスタの製造方法、有機トランジスタ、半導体装置の製造方法、半導体装置および電子機器
CN103874704A (zh) 2011-10-12 2014-06-18 索尼公司 二氧杂蒽嵌蒽化合物、层压结构及其形成方法、以及电子器件及其制造方法
JP2013098487A (ja) 2011-11-04 2013-05-20 Sony Corp 有機半導体素子の製造方法、有機半導体素子および電子機器
JP5899010B2 (ja) * 2012-03-06 2016-04-06 株式会社ダイセル アンタントレン系化合物およびその製造方法
WO2013157421A1 (ja) * 2012-04-17 2013-10-24 ソニー株式会社 有機半導体層、電子デバイス、及び、電子デバイスの製造方法
JP2014055208A (ja) * 2012-09-11 2014-03-27 Sony Corp ６，１２‐ジオキサアンタントレン誘導体、有機半導体素子、及び、有機半導体素子の製造方法
JP6689393B2 (ja) 2016-09-29 2020-04-28 富士フイルム株式会社 有機半導体膜形成用組成物、有機半導体膜及びその製造方法、並びに、有機半導体素子
CN111116602B (zh) * 2019-11-28 2021-05-14 北京燕化集联光电技术有限公司 一种oled材料及其在有机电致发光器件中的应用

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DE545212C (de) * 1928-07-29 1932-02-26 I G Farbenindustrie Akt Ges Verfahren zur Darstellung von Derivaten des Dinaphthylendioxyds
GB789310A (en) * 1954-10-28 1958-01-15 Bayer Ag Improvements in or relating to the production of dyestuffs on the fibre
US6690029B1 (en) * 2001-08-24 2004-02-10 University Of Kentucky Research Foundation Substituted pentacenes and electronic devices made with substituted pentacenes
JP2004140267A (ja) * 2002-10-18 2004-05-13 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
WO2005038943A2 (en) * 2003-10-17 2005-04-28 Nitto Denko Corporation Organic thin-film transistor
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Anthony E. Wetherby Jr. et al.Reaction of bis(bis(trimethylsilyl)amido)mercury(II) with 3,3’-disubstituted binaphthols:Cyclization via an intramolecular electrophilic aromatic substitution reaction.《Inorganica Chimica Acta》.2006,第360卷1977-1986. *
AnthonyE.WetherbyJr.etal.Reactionofbis(bis(trimethylsilyl)amido)mercury(II)with3 3’-disubstituted binaphthols:Cyclization via an intramolecular electrophilic aromatic substitution reaction.《Inorganica Chimica Acta》.2006
CAS.registry[online].《REGISTRY》.2007,937275-35-9,937275-34-8,937275-33-7,937275-32-6,872823-76-2,872823-75-1,871876-81-2,871876-80-1,867133-89-9,856351-37-6,856351-35-4,855752-09-9,854868-82-9,854868-81-8,854868-80-7,854868-78-3,854868-77-2,854822-34-7,854661-77-1,854661-75-9,854661-71-5,120175-73-7,59276-42-5,59276-41-4,59276-40-3. *

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Publication number Publication date
CN101591343A (zh) 2009-12-02
JP2010006794A (ja) 2010-01-14
TW201002721A (en) 2010-01-16
JP5470935B2 (ja) 2014-04-16
US20090289248A1 (en) 2009-11-26

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