CN101582388B - 衬底保持设备 - Google Patents

衬底保持设备 Download PDF

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Publication number
CN101582388B
CN101582388B CN2009101390600A CN200910139060A CN101582388B CN 101582388 B CN101582388 B CN 101582388B CN 2009101390600 A CN2009101390600 A CN 2009101390600A CN 200910139060 A CN200910139060 A CN 200910139060A CN 101582388 B CN101582388 B CN 101582388B
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CN
China
Prior art keywords
substrate
substrate holding
heat conduction
sheet
holding mechanism
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2009101390600A
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English (en)
Chinese (zh)
Other versions
CN101582388A (zh
Inventor
金子一秋
田中洋
池田真义
涩谷阳介
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
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Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Publication of CN101582388A publication Critical patent/CN101582388A/zh
Application granted granted Critical
Publication of CN101582388B publication Critical patent/CN101582388B/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/34—Accessory or component

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CN2009101390600A 2008-05-16 2009-05-15 衬底保持设备 Active CN101582388B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2008129118 2008-05-16
JP2008-129118 2008-05-16
JP2008129118 2008-05-16
JP2009038453A JP5324251B2 (ja) 2008-05-16 2009-02-20 基板保持装置
JP2009-038453 2009-02-20
JP2009038453 2009-02-20

Publications (2)

Publication Number Publication Date
CN101582388A CN101582388A (zh) 2009-11-18
CN101582388B true CN101582388B (zh) 2011-02-09

Family

ID=41315434

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009101390600A Active CN101582388B (zh) 2008-05-16 2009-05-15 衬底保持设备

Country Status (4)

Country Link
US (1) US20090283976A1 (enExample)
JP (1) JP5324251B2 (enExample)
KR (1) KR101108411B1 (enExample)
CN (1) CN101582388B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4418032B2 (ja) * 2007-09-11 2010-02-17 キヤノンアネルバ株式会社 静電チャック
JP2009173975A (ja) * 2008-01-22 2009-08-06 Canon Anelva Corp 金属微粒子の生成方法、金属含有ペーストの製造方法及び金属薄膜配線の形成方法
JP2010021510A (ja) * 2008-06-13 2010-01-28 Canon Anelva Corp 基板保持装置およびプラズマ処理装置
JP5166531B2 (ja) * 2008-06-24 2013-03-21 キヤノンアネルバ株式会社 磁場発生装置及びプラズマ処理装置
KR101216790B1 (ko) * 2008-07-31 2012-12-28 캐논 아네르바 가부시키가이샤 플라즈마 처리 장치 및 전자 디바이스의 제조 방법
JP5434636B2 (ja) * 2010-01-29 2014-03-05 住友電気工業株式会社 静電チャックを備えた基板保持体
CN103938186B (zh) * 2013-01-23 2016-12-07 北京北方微电子基地设备工艺研究中心有限责任公司 托盘、mocvd反应腔和mocvd设备
ITCO20130072A1 (it) * 2013-12-19 2015-06-20 Lpe Spa Suscettore con lavorazioni curve e concentriche nella superficie d'appoggio dei substrati
CN104752130A (zh) * 2013-12-30 2015-07-01 中微半导体设备(上海)有限公司 等离子体处理装置及其静电卡盘
JP2015222802A (ja) * 2014-05-23 2015-12-10 株式会社東芝 ウエハホルダおよび蒸着装置
CN105448796A (zh) * 2014-09-29 2016-03-30 盛美半导体设备（上海）有限公司 卡盘
US10340171B2 (en) 2016-05-18 2019-07-02 Lam Research Corporation Permanent secondary erosion containment for electrostatic chuck bonds
US11069553B2 (en) * 2016-07-07 2021-07-20 Lam Research Corporation Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity
US10388558B2 (en) * 2016-12-05 2019-08-20 Tokyo Electron Limited Plasma processing apparatus
US10910195B2 (en) 2017-01-05 2021-02-02 Lam Research Corporation Substrate support with improved process uniformity
JP7312031B2 (ja) * 2019-06-17 2023-07-20 日本特殊陶業株式会社 静電チャックおよびその運転方法
JP7394661B2 (ja) * 2020-03-09 2023-12-08 東京エレクトロン株式会社 基板処理装置

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JP2631485B2 (ja) * 1988-01-28 1997-07-16 キヤノン株式会社 位置決め装置
JP2766935B2 (ja) * 1989-10-20 1998-06-18 キヤノン株式会社 Ｘ線露光装置
JP3173928B2 (ja) * 1992-09-25 2001-06-04 キヤノン株式会社 基板保持装置、基板保持方法および露光装置
JPH07249586A (ja) * 1993-12-22 1995-09-26 Tokyo Electron Ltd 処理装置及びその製造方法並びに被処理体の処理方法
JP3253002B2 (ja) * 1995-12-27 2002-02-04 東京エレクトロン株式会社 処理装置
US6144719A (en) * 1996-01-22 2000-11-07 Canon Kabushiki Kaisha Exposure method, exposure device and device producing method
US5730803A (en) * 1996-02-23 1998-03-24 Applied Materials, Inc. Apparatus and method for transferring heat from a hot electrostatic chuck to an underlying cold body
US5944363A (en) * 1997-01-06 1999-08-31 Senior Engineering Investments Ag Flexible connector systems
JP3377165B2 (ja) * 1997-05-19 2003-02-17 キヤノン株式会社 半導体露光装置
JP3936785B2 (ja) * 1997-09-06 2007-06-27 キヤノンアネルバ株式会社 基板処理装置
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JP3170248B2 (ja) * 1998-10-26 2001-05-28 日本エー・エス・エム株式会社 半導体基板保持装置
JP4236329B2 (ja) * 1999-04-15 2009-03-11 日本碍子株式会社 プラズマ処理装置
JP2001110883A (ja) * 1999-09-29 2001-04-20 Applied Materials Inc 基板支持装置及びその伝熱方法
WO2002016993A1 (en) * 2000-08-18 2002-02-28 Nikon Corporation Optical element holding device
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JP4141234B2 (ja) * 2002-11-13 2008-08-27 キヤノンアネルバ株式会社 プラズマ処理装置
JP2004273619A (ja) 2003-03-06 2004-09-30 Hitachi High-Technologies Corp 真空処理装置用の試料載置装置
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KR100549529B1 (ko) * 2003-12-26 2006-02-03 삼성전자주식회사 반도체제조장치
JP2006013132A (ja) 2004-06-25 2006-01-12 Daikin Ind Ltd 温度制御装置
US7436645B2 (en) * 2004-10-07 2008-10-14 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US7648914B2 (en) * 2004-10-07 2010-01-19 Applied Materials, Inc. Method for etching having a controlled distribution of process results
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US7387510B2 (en) * 2005-06-09 2008-06-17 Xin Wen Luo Lighter with pivot nozzle
JP4707593B2 (ja) * 2006-03-23 2011-06-22 大日本スクリーン製造株式会社 熱処理装置と基板吸着方法
US8524005B2 (en) * 2006-07-07 2013-09-03 Tokyo Electron Limited Heat-transfer structure and substrate processing apparatus
JP2010021510A (ja) * 2008-06-13 2010-01-28 Canon Anelva Corp 基板保持装置およびプラズマ処理装置

Also Published As

Publication number Publication date
JP2009302508A (ja) 2009-12-24
KR20090119733A (ko) 2009-11-19
JP5324251B2 (ja) 2013-10-23
KR101108411B1 (ko) 2012-01-30
CN101582388A (zh) 2009-11-18
US20090283976A1 (en) 2009-11-19

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