JP5324251B2 - 基板保持装置 - Google Patents

基板保持装置 Download PDF

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Publication number
JP5324251B2
JP5324251B2 JP2009038453A JP2009038453A JP5324251B2 JP 5324251 B2 JP5324251 B2 JP 5324251B2 JP 2009038453 A JP2009038453 A JP 2009038453A JP 2009038453 A JP2009038453 A JP 2009038453A JP 5324251 B2 JP5324251 B2 JP 5324251B2
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JP
Japan
Prior art keywords
conductive sheet
heat conductive
substrate
substrate holding
electrostatic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009038453A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009302508A5 (enExample
JP2009302508A (ja
Inventor
一秋 金子
洋 田中
真義 池田
陽介 渋谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp filed Critical Canon Anelva Corp
Priority to JP2009038453A priority Critical patent/JP5324251B2/ja
Priority to US12/432,098 priority patent/US20090283976A1/en
Priority to CN2009101390600A priority patent/CN101582388B/zh
Priority to KR1020090042435A priority patent/KR101108411B1/ko
Publication of JP2009302508A publication Critical patent/JP2009302508A/ja
Publication of JP2009302508A5 publication Critical patent/JP2009302508A5/ja
Application granted granted Critical
Publication of JP5324251B2 publication Critical patent/JP5324251B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/34—Accessory or component

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
JP2009038453A 2008-05-16 2009-02-20 基板保持装置 Active JP5324251B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009038453A JP5324251B2 (ja) 2008-05-16 2009-02-20 基板保持装置
US12/432,098 US20090283976A1 (en) 2008-05-16 2009-04-29 Substrate holding apparatus
CN2009101390600A CN101582388B (zh) 2008-05-16 2009-05-15 衬底保持设备
KR1020090042435A KR101108411B1 (ko) 2008-05-16 2009-05-15 기판 유지 장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008129118 2008-05-16
JP2008129118 2008-05-16
JP2009038453A JP5324251B2 (ja) 2008-05-16 2009-02-20 基板保持装置

Publications (3)

Publication Number Publication Date
JP2009302508A JP2009302508A (ja) 2009-12-24
JP2009302508A5 JP2009302508A5 (enExample) 2012-03-22
JP5324251B2 true JP5324251B2 (ja) 2013-10-23

Family

ID=41315434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009038453A Active JP5324251B2 (ja) 2008-05-16 2009-02-20 基板保持装置

Country Status (4)

Country Link
US (1) US20090283976A1 (enExample)
JP (1) JP5324251B2 (enExample)
KR (1) KR101108411B1 (enExample)
CN (1) CN101582388B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4418032B2 (ja) * 2007-09-11 2010-02-17 キヤノンアネルバ株式会社 静電チャック
JP2009173975A (ja) * 2008-01-22 2009-08-06 Canon Anelva Corp 金属微粒子の生成方法、金属含有ペーストの製造方法及び金属薄膜配線の形成方法
JP2010021510A (ja) * 2008-06-13 2010-01-28 Canon Anelva Corp 基板保持装置およびプラズマ処理装置
JP5166531B2 (ja) * 2008-06-24 2013-03-21 キヤノンアネルバ株式会社 磁場発生装置及びプラズマ処理装置
CN102105618B (zh) * 2008-07-31 2012-07-25 佳能安内华股份有限公司 等离子处理设备和电子器件制造方法
JP5434636B2 (ja) * 2010-01-29 2014-03-05 住友電気工業株式会社 静電チャックを備えた基板保持体
CN103938186B (zh) * 2013-01-23 2016-12-07 北京北方微电子基地设备工艺研究中心有限责任公司 托盘、mocvd反应腔和mocvd设备
ITCO20130072A1 (it) * 2013-12-19 2015-06-20 Lpe Spa Suscettore con lavorazioni curve e concentriche nella superficie d'appoggio dei substrati
CN104752130A (zh) * 2013-12-30 2015-07-01 中微半导体设备(上海)有限公司 等离子体处理装置及其静电卡盘
JP2015222802A (ja) * 2014-05-23 2015-12-10 株式会社東芝 ウエハホルダおよび蒸着装置
CN105448796A (zh) * 2014-09-29 2016-03-30 盛美半导体设备（上海）有限公司 卡盘
US10340171B2 (en) 2016-05-18 2019-07-02 Lam Research Corporation Permanent secondary erosion containment for electrostatic chuck bonds
US11069553B2 (en) * 2016-07-07 2021-07-20 Lam Research Corporation Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity
US10388558B2 (en) * 2016-12-05 2019-08-20 Tokyo Electron Limited Plasma processing apparatus
US10910195B2 (en) 2017-01-05 2021-02-02 Lam Research Corporation Substrate support with improved process uniformity
JP7312031B2 (ja) * 2019-06-17 2023-07-20 日本特殊陶業株式会社 静電チャックおよびその運転方法
JP7394661B2 (ja) * 2020-03-09 2023-12-08 東京エレクトロン株式会社 基板処理装置

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JP2631485B2 (ja) * 1988-01-28 1997-07-16 キヤノン株式会社 位置決め装置
JP2766935B2 (ja) * 1989-10-20 1998-06-18 キヤノン株式会社 Ｘ線露光装置
JP3173928B2 (ja) * 1992-09-25 2001-06-04 キヤノン株式会社 基板保持装置、基板保持方法および露光装置
JPH07249586A (ja) * 1993-12-22 1995-09-26 Tokyo Electron Ltd 処理装置及びその製造方法並びに被処理体の処理方法
JP3253002B2 (ja) * 1995-12-27 2002-02-04 東京エレクトロン株式会社 処理装置
US6144719A (en) * 1996-01-22 2000-11-07 Canon Kabushiki Kaisha Exposure method, exposure device and device producing method
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JP3377165B2 (ja) * 1997-05-19 2003-02-17 キヤノン株式会社 半導体露光装置
JP3936785B2 (ja) * 1997-09-06 2007-06-27 キヤノンアネルバ株式会社 基板処理装置
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JP3170248B2 (ja) * 1998-10-26 2001-05-28 日本エー・エス・エム株式会社 半導体基板保持装置
JP4236329B2 (ja) * 1999-04-15 2009-03-11 日本碍子株式会社 プラズマ処理装置
JP2001110883A (ja) * 1999-09-29 2001-04-20 Applied Materials Inc 基板支持装置及びその伝熱方法
US7154684B2 (en) * 2000-08-18 2006-12-26 Nikon Corporation Optical element holding apparatus
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KR100511854B1 (ko) * 2002-06-18 2005-09-02 아네르바 가부시키가이샤 정전 흡착 장치
JP4141234B2 (ja) * 2002-11-13 2008-08-27 キヤノンアネルバ株式会社 プラズマ処理装置
JP2004273619A (ja) 2003-03-06 2004-09-30 Hitachi High-Technologies Corp 真空処理装置用の試料載置装置
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US7387510B2 (en) * 2005-06-09 2008-06-17 Xin Wen Luo Lighter with pivot nozzle
JP4707593B2 (ja) * 2006-03-23 2011-06-22 大日本スクリーン製造株式会社 熱処理装置と基板吸着方法
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JP2010021510A (ja) * 2008-06-13 2010-01-28 Canon Anelva Corp 基板保持装置およびプラズマ処理装置

Also Published As

Publication number Publication date
CN101582388A (zh) 2009-11-18
US20090283976A1 (en) 2009-11-19
KR101108411B1 (ko) 2012-01-30
KR20090119733A (ko) 2009-11-19
CN101582388B (zh) 2011-02-09
JP2009302508A (ja) 2009-12-24

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