KR101108411B1 - 기판 유지 장치 - Google Patents

기판 유지 장치 Download PDF

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Publication number
KR101108411B1
KR101108411B1 KR1020090042435A KR20090042435A KR101108411B1 KR 101108411 B1 KR101108411 B1 KR 101108411B1 KR 1020090042435 A KR1020090042435 A KR 1020090042435A KR 20090042435 A KR20090042435 A KR 20090042435A KR 101108411 B1 KR101108411 B1 KR 101108411B1
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KR
South Korea
Prior art keywords
thermally conductive
substrate
substrate holding
conductive sheet
holding mechanism
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020090042435A
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English (en)
Korean (ko)
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KR20090119733A (ko
Inventor
가즈아끼 가네꼬
요오 다나까
마사요시 이께다
요오스께 시부야
Original Assignee
캐논 아네르바 가부시키가이샤
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Publication of KR20090119733A publication Critical patent/KR20090119733A/ko
Application granted granted Critical
Publication of KR101108411B1 publication Critical patent/KR101108411B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/34—Accessory or component

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020090042435A 2008-05-16 2009-05-15 기판 유지 장치 Active KR101108411B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2008-129118 2008-05-16
JP2008129118 2008-05-16
JPJP-P-2009-038453 2009-02-20
JP2009038453A JP5324251B2 (ja) 2008-05-16 2009-02-20 基板保持装置

Publications (2)

Publication Number Publication Date
KR20090119733A KR20090119733A (ko) 2009-11-19
KR101108411B1 true KR101108411B1 (ko) 2012-01-30

Family

ID=41315434

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090042435A Active KR101108411B1 (ko) 2008-05-16 2009-05-15 기판 유지 장치

Country Status (4)

Country Link
US (1) US20090283976A1 (enExample)
JP (1) JP5324251B2 (enExample)
KR (1) KR101108411B1 (enExample)
CN (1) CN101582388B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4418032B2 (ja) * 2007-09-11 2010-02-17 キヤノンアネルバ株式会社 静電チャック
JP2009173975A (ja) * 2008-01-22 2009-08-06 Canon Anelva Corp 金属微粒子の生成方法、金属含有ペーストの製造方法及び金属薄膜配線の形成方法
JP2010021510A (ja) * 2008-06-13 2010-01-28 Canon Anelva Corp 基板保持装置およびプラズマ処理装置
JP5166531B2 (ja) * 2008-06-24 2013-03-21 キヤノンアネルバ株式会社 磁場発生装置及びプラズマ処理装置
KR101216790B1 (ko) * 2008-07-31 2012-12-28 캐논 아네르바 가부시키가이샤 플라즈마 처리 장치 및 전자 디바이스의 제조 방법
JP5434636B2 (ja) * 2010-01-29 2014-03-05 住友電気工業株式会社 静電チャックを備えた基板保持体
CN103938186B (zh) * 2013-01-23 2016-12-07 北京北方微电子基地设备工艺研究中心有限责任公司 托盘、mocvd反应腔和mocvd设备
ITCO20130072A1 (it) * 2013-12-19 2015-06-20 Lpe Spa Suscettore con lavorazioni curve e concentriche nella superficie d'appoggio dei substrati
CN104752130A (zh) * 2013-12-30 2015-07-01 中微半导体设备(上海)有限公司 等离子体处理装置及其静电卡盘
JP2015222802A (ja) * 2014-05-23 2015-12-10 株式会社東芝 ウエハホルダおよび蒸着装置
CN105448796A (zh) * 2014-09-29 2016-03-30 盛美半导体设备（上海）有限公司 卡盘
US10340171B2 (en) 2016-05-18 2019-07-02 Lam Research Corporation Permanent secondary erosion containment for electrostatic chuck bonds
US11069553B2 (en) * 2016-07-07 2021-07-20 Lam Research Corporation Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity
US10388558B2 (en) * 2016-12-05 2019-08-20 Tokyo Electron Limited Plasma processing apparatus
US10910195B2 (en) 2017-01-05 2021-02-02 Lam Research Corporation Substrate support with improved process uniformity
JP7312031B2 (ja) * 2019-06-17 2023-07-20 日本特殊陶業株式会社 静電チャックおよびその運転方法
JP7394661B2 (ja) * 2020-03-09 2023-12-08 東京エレクトロン株式会社 基板処理装置

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KR20020041822A (ko) * 2000-08-18 2002-06-03 시마무라 테루오 광학소자 유지장치
JP2004273619A (ja) 2003-03-06 2004-09-30 Hitachi High-Technologies Corp 真空処理装置用の試料載置装置
KR20050066321A (ko) * 2003-12-26 2005-06-30 삼성전자주식회사 반도체제조장치
JP2006013132A (ja) 2004-06-25 2006-01-12 Daikin Ind Ltd 温度制御装置

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JP3173928B2 (ja) * 1992-09-25 2001-06-04 キヤノン株式会社 基板保持装置、基板保持方法および露光装置
JPH07249586A (ja) * 1993-12-22 1995-09-26 Tokyo Electron Ltd 処理装置及びその製造方法並びに被処理体の処理方法
JP3253002B2 (ja) * 1995-12-27 2002-02-04 東京エレクトロン株式会社 処理装置
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JP2001110883A (ja) * 1999-09-29 2001-04-20 Applied Materials Inc 基板支持装置及びその伝熱方法
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JP4707593B2 (ja) * 2006-03-23 2011-06-22 大日本スクリーン製造株式会社 熱処理装置と基板吸着方法
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JP2010021510A (ja) * 2008-06-13 2010-01-28 Canon Anelva Corp 基板保持装置およびプラズマ処理装置

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KR20020041822A (ko) * 2000-08-18 2002-06-03 시마무라 테루오 광학소자 유지장치
JP2004273619A (ja) 2003-03-06 2004-09-30 Hitachi High-Technologies Corp 真空処理装置用の試料載置装置
KR20050066321A (ko) * 2003-12-26 2005-06-30 삼성전자주식회사 반도체제조장치
JP2006013132A (ja) 2004-06-25 2006-01-12 Daikin Ind Ltd 温度制御装置

Also Published As

Publication number Publication date
JP2009302508A (ja) 2009-12-24
KR20090119733A (ko) 2009-11-19
CN101582388B (zh) 2011-02-09
JP5324251B2 (ja) 2013-10-23
CN101582388A (zh) 2009-11-18
US20090283976A1 (en) 2009-11-19

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