CN101573779B - 混合光学和电子束光刻制造层的共对准的沟槽结构及方法 - Google Patents
混合光学和电子束光刻制造层的共对准的沟槽结构及方法 Download PDFInfo
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- CN101573779B CN101573779B CN200780049067.2A CN200780049067A CN101573779B CN 101573779 B CN101573779 B CN 101573779B CN 200780049067 A CN200780049067 A CN 200780049067A CN 101573779 B CN101573779 B CN 101573779B
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- Engineering & Computer Science (AREA)
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- Analytical Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Electron Beam Exposure (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (2)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/618,957 | 2007-01-02 | ||
US11/618,957 US7550361B2 (en) | 2007-01-02 | 2007-01-02 | Trench structure and method for co-alignment of mixed optical and electron beam lithographic fabrication levels |
PCT/US2007/087742 WO2008082933A1 (en) | 2007-01-02 | 2007-12-17 | Trench structure and method for co-alignment of mixed optical and electron beam lithographic fabrication levels |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101573779A CN101573779A (zh) | 2009-11-04 |
CN101573779B true CN101573779B (zh) | 2014-05-28 |
Family
ID=39582768
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200780049067.2A Expired - Fee Related CN101573779B (zh) | 2007-01-02 | 2007-12-17 | 混合光学和电子束光刻制造层的共对准的沟槽结构及方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7550361B2 (zh) |
JP (1) | JP5306228B2 (zh) |
KR (1) | KR20090097151A (zh) |
CN (1) | CN101573779B (zh) |
TW (1) | TWI463530B (zh) |
WO (1) | WO2008082933A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102543748B (zh) * | 2010-12-31 | 2014-09-24 | 中国科学院微电子研究所 | 半导体器件的制造方法 |
KR101867953B1 (ko) * | 2011-12-22 | 2018-06-18 | 삼성전자주식회사 | 반도체 소자 및 반도체 소자의 형성 방법 |
FR2991502B1 (fr) | 2012-05-29 | 2014-07-11 | Commissariat Energie Atomique | Procede de fabrication d'un circuit integre ayant des tranchees d'isolation avec des profondeurs distinctes |
CN104282608A (zh) * | 2013-07-09 | 2015-01-14 | 中国科学院微电子研究所 | 光刻对准方法和装置 |
CN105280545A (zh) * | 2014-07-24 | 2016-01-27 | 联华电子股份有限公司 | 半导体装置的浅沟槽隔离结构与其制造方法 |
EP3364248A1 (en) | 2017-02-15 | 2018-08-22 | Centre National De La Recherche Scientifique | Electron-beam lithography process adapted for a sample comprising at least one fragile nanostructure |
WO2020167331A1 (en) * | 2019-02-15 | 2020-08-20 | Kla-Tencor Corporation | Misregistration measurements using combined optical and electron beam technology |
US11075126B2 (en) | 2019-02-15 | 2021-07-27 | Kla-Tencor Corporation | Misregistration measurements using combined optical and electron beam technology |
KR20210044088A (ko) * | 2019-10-14 | 2021-04-22 | 경북대학교 산학협력단 | 의료 진단용 칩 및 의료 진단용 칩의 제조 방법 |
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2007
- 2007-01-02 US US11/618,957 patent/US7550361B2/en not_active Expired - Fee Related
- 2007-12-17 WO PCT/US2007/087742 patent/WO2008082933A1/en active Application Filing
- 2007-12-17 JP JP2009544176A patent/JP5306228B2/ja not_active Expired - Fee Related
- 2007-12-17 KR KR1020097010800A patent/KR20090097151A/ko active IP Right Grant
- 2007-12-17 CN CN200780049067.2A patent/CN101573779B/zh not_active Expired - Fee Related
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2008
- 2008-01-02 TW TW097100117A patent/TWI463530B/zh not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
---|---|
TWI463530B (zh) | 2014-12-01 |
TW200845119A (en) | 2008-11-16 |
US20080157404A1 (en) | 2008-07-03 |
US7550361B2 (en) | 2009-06-23 |
KR20090097151A (ko) | 2009-09-15 |
WO2008082933A1 (en) | 2008-07-10 |
JP5306228B2 (ja) | 2013-10-02 |
JP2010515265A (ja) | 2010-05-06 |
CN101573779A (zh) | 2009-11-04 |
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