CN101542718B - 树脂析出防止剂、树脂析出防止方法和基材 - Google Patents

树脂析出防止剂、树脂析出防止方法和基材 Download PDF

Info

Publication number
CN101542718B
CN101542718B CN2008800001844A CN200880000184A CN101542718B CN 101542718 B CN101542718 B CN 101542718B CN 2008800001844 A CN2008800001844 A CN 2008800001844A CN 200880000184 A CN200880000184 A CN 200880000184A CN 101542718 B CN101542718 B CN 101542718B
Authority
CN
China
Prior art keywords
resin
agent
prevent
integer
separated out
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2008800001844A
Other languages
English (en)
Other versions
CN101542718A (zh
Inventor
相场玲宏
三村智晴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JX Nippon Mining and Metals Corp
Original Assignee
Nippon Mining and Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining and Metals Co Ltd filed Critical Nippon Mining and Metals Co Ltd
Publication of CN101542718A publication Critical patent/CN101542718A/zh
Application granted granted Critical
Publication of CN101542718B publication Critical patent/CN101542718B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/02—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving pretreatment of the surfaces to be joined
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/49—Phosphorus-containing compounds
    • C08K5/51—Phosphorus bound to oxygen
    • C08K5/52—Phosphorus bound to oxygen only
    • C08K5/521—Esters of phosphoric acids, e.g. of H3PO4
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48639—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48647—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83439—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83444—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/83447—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/83463—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/83464—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85439—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85444—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85447—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Preventing Corrosion Or Incrustation Of Metals (AREA)
  • Die Bonding (AREA)
  • Sealing Material Composition (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

本发明的目的是提供一种树脂析出防止剂，该树脂析出防止剂排水处理的负荷小，且即使在使用低应力型的芯片键合树脂的情况下，也不会给芯片键合强度、装配特性带来不良影响，不会损伤变色防止处理、封孔处理效果。本发明提供一种树脂析出防止剂，其特征在于，含有下述通式表示的磷酸酯。O＝P(O-(R2-O)n-R1)m(OH)3-m(式中，R1表示碳原子数为4～30的饱和或不饱和的烃基，R2表示低级亚烷基，n表示0～10的整数，m表示1～3的整数)。

Description

树脂析出防止剂、树脂析出防止方法和基材
技术领域
本发明涉及在用树脂将引线框、印刷布线板等半导体布线基材与IC芯片进行接合固定的芯片键合工序中的树脂析出防止剂和树脂析出防止方法。 
背景技术
半导体芯片与引线框架、印刷布线板等基材通常通过芯片键合树脂来进行接合固定。基材的接合面一般进行了金、银、钯、铜、镍等的镀敷，但如果表面粗糙程度过大，或者表面被镀敷添加剂、变色防止剂、封孔剂等有机物污染，那么在芯片键合工序中涂布芯片键合树脂时，就会发生树脂或添加剂的析出(树脂析出(RBO))。该RBO会降低芯片键合强度，或者对后续工序的引线键合、成型带来不良影响。 
一直以来，为了防止RBO，往往通过缩小接合面的镀敷面的表面粗糙程度来抑制毛细管现象，或者清洗表面来除掉污染物。但是，因为接合面的表面粗糙程度影响芯片键合强度、装配机的图像识别能力，所以不能无限制地缩小。另外，在清洗表面时，有变色防止皮膜、封孔处理皮膜也脱离的问题。 
为了解决这些问题，专利文献1公开了下述技术，即：通过将基材浸渍在以羧酸、硫醇等为主要成分的溶液中，使之吸附1～几个分子左右厚度的有机皮膜，从而改变基材面的表面粗糙程度，并且清洗不会剥离变色防止皮膜、封孔处理皮膜，另外由于吸附的有机皮膜非常薄，所以可以在不影响引线键合、成型等装配特性的情况下，防止RBO。 
另外，本发明者们进一步进行了研究，结果显示，具有极性基团的氟 烷基化合物比专利文献1的羧酸、硫醇化合物等防RBO效果更好(专利文献2)。 
但是，因为氟烷基化合物含有氟，所以有时排水成为问题。 
专利文献1：特开平11-195662号公报 
专利文献2：特愿2007-52890号 
发明内容
本发明的目的是提供一种树脂析出防止剂，该树脂析出防止剂排水处理的负荷小，且即使在使用低应力型的芯片键合树脂的情况下，也不会给芯片键合强度、及装配特性带来不良影响，不会损伤变色防止处理及封孔处理效果。 
本发明者们进行了深入研究，结果发现，在通过将基材浸渍在含有树脂析出防止剂的溶液中使镀敷面的表面吸附有机皮膜，来防止树脂析出的工序中，发现一类有机化合物比含氟的化合物排水处理的负荷小，且具有下述的树脂析出防止效果：即使在使用低应力型的芯片键合树脂的情况下，也不会给芯片键合强度、装配特性带来恶劣影响，不会损伤变色防止处理、封孔处理效果。 
即本发明如下。 
(1)一种树脂析出防止剂，其特征在于，含有下述通式表示的磷酸酯， 
O＝P(O-(R2-O)n-R1)m(OH)3-m
(上式中，R1表示碳原子数为4～30的饱和或不饱和的烃基，R2表示低级亚烷基，n表示0～10的整数，m表示1～3的整数。) 
(2)根据上述(1)所述的树脂析出防止剂，其特征在于，上述磷酸酯的R1是碳原子数8～20的烷基、链烯基、链炔基中的任一种，R2是亚乙基，n是1～6的整数，m是1～3的整数。 
(3)根据上述(1)或(2)所述的树脂析出防止剂，其特征在于，进而含有含有四唑衍生物、三唑衍生物、咪唑衍生物、噻唑衍生物中的任一种的含氮杂环状化合物系的变色防止剂。
(4)一种树脂析出防止方法，其特征在于，使用根据上述(1)～(3)的任一项所述的树脂析出防止剂来进行树脂析出防止处理。 
(5)一种基材，其特征在于，通过使用根据上述(1)～(3)的任一项所述的树脂析出防止剂进行树脂析出防止处理，而具有该树脂析出防止剂的皮膜。 
通过使用本发明的树脂析出防止剂使引线框、印刷布线板等半导体布线基材表面吸附具有树脂析出防止功能的有机化合物，来进行树脂析出防止处理，可以在不损伤变色防止效果、及封孔处理效果的情况下防止芯片键合工序中的树脂析出。另外，也不会给引线键合性、成型性等装配特性带来不良影响。进而，因为是非氟类的树脂析出防止剂，所以排水处理的负荷小。 
附图说明
图1是显示实施例的抗树脂析出性评价中的树脂析出量的测定方法的图。 
具体实施方式
本发明的树脂析出防止剂含有下述式表示的磷酸酯。 
O＝P(O-(R2-O)n-R1)m(OH)3-m
(式中，R1表示碳原子数为4～30的饱和或不饱和的烃基，R2表示低级亚烷基，n表示0～10的整数，m表示1～3的整数。) 
R1表示碳原子数为4～30的饱和或不饱和的烃基，其中优选碳原子数8～20的饱和或不饱和的烃基。如果碳原子数过少则树脂析出防止效果低，过多则成型性(成型树脂的密合性)降低。 
作为饱和或不饱和的烃基，可以具有2个以上的双键、叁键，另外，既可以是直链状，又可以具有侧链。进而主链也可以连接有环状烃基、芳香族烃基，但优选直链状的烷基、链烯基、链炔基，特别优选直链状的烷基。在链烯基、链炔基中，对双键、叁键的位置不特别限制。
R2表示碳原子数1～4的低级亚烷基，优选亚甲基、亚乙基、亚丙基，特别优选亚乙基。 
n表示0～10的整数，优选1～6的整数。 
m表示1～3的整数。上述磷酸酯，单酯、双酯、三酯中的任一种均可使用，在作为混合物而得到的情况下没有必要分离，可以以混合物形式使用。另外，在m是1以上的数时，R1、R2、和n可以不同。 
将本发明的树脂析出防止剂在水等溶剂中溶解，制成树脂析出防止剂溶液来使用。所述树脂析出防止剂溶液中的上述磷酸酯的浓度优选为1mg/L～100g/L，更优选10mg/L～10g/L。因为如果上述浓度不足1mg/L则防RBO效果弱，即使超过100g/L效果也饱和，不能期待更好的效果，所以不优选。 
进而，本发明的树脂析出防止剂可以含有金属的氧化变色防止剂。作为该变色防止剂，具体地说可以使用公知的变色防止剂，特别优选含有四唑衍生物、三唑衍生物、咪唑衍生物、噻唑衍生物中的任一种化合物的含氮杂环状化合物系的变色防止剂。 
作为这些变色防止剂，可以列举例如，四唑、苯并三唑、苯并咪唑、苯并噻唑、巯基苯并噻唑等。 
所述变色防止剂优选在树脂析出防止剂溶液中含有1mg/L～100g/L，更优选含有10mg/L～10g/L。因为如果不足1mg/L则变色防止效果弱，即使超过100g/L效果也饱和，不能期待更好的效果，所以不优选。 
通过含有变色防止剂，可以在赋予树脂析出防止效果的同时赋予变色防止效果。 
使用水作为溶剂时，在上述磷酸酯难溶于水的情况下，根据需要可以添加醇、酮等有机溶剂。添加量可以是上述磷酸酯溶于水所必要的浓度，通常优选0.1g/L～200g/L，更优选1g/L～50g/L。因为如果添加量过少则溶解性低，另外即使过多，溶解上述磷酸酯的效果也不变，所以不优选。 
进而，在上述磷酸酯难溶于水的情况下，根据需要还可以添加1μg/L～10g/L，优选10μg/L～1g/L的阴离子系、阳离子系、非离子系的表面活性 剂中的任一种、或它们的混合物。因为如果添加量过少则溶解性低，另外即使过多溶解上述磷酸酯的效果也不变，所以不优选。 
另外，在树脂析出防止剂中，在希望提高液体的pH缓冲性的情况下，根据需要可以添加磷酸系、硼酸系、有机酸系的pH缓冲液0.1g/L～200g/L，优选添加1～50g/L。因为如果不足0.1g/L则pH缓冲效果低，即使超过200g/L效果也饱和，不能期待更好的效果，所以不优选。 
另外，在树脂析出防止剂溶液中有金属溶出的情况下，根据需要可以使用金属掩蔽剂。作为该金属掩蔽剂，基本上可以使用公知的掩蔽剂，特别优选胺系、氨基羧酸系、羧酸系的络合剂，可以添加0.1g/L～200g/L，优选添加1g/L～50g/L。因为如果不足0.1g/L则金属的络合力低，即使超过200g/L效果也饱和，不能期待更好的效果，所以不优选。 
对树脂析出防止剂溶液的pH值没必要特别限定，通常为pH1～14之间，优选在pH2～12下进行处理。如果超出该范围，则原料的损伤大、树脂析出防止效果低。 
另外，树脂析出防止剂溶液的温度可以是在水溶液中能进行的温度范围，通常为5～90℃，优选为10～60℃。如果温度过低则树脂析出防止效果低，即使超过90℃也仅是操作性变差，故而没有提高温度的优点。 
进而，在树脂析出防止剂溶液中的处理时间，可以在0.1秒钟～300秒钟内根据效果来适当调整，如果考虑操作的重现性和效率则优选1秒钟～60秒钟。如果不足0.1秒钟则树脂析出防止的效果低，另外难以实现操作的重现性，但即使超过300秒钟效果也饱和，且操作效率降低。 
另外，本发明的树脂析出防止方法是，在树脂析出防止剂溶液中浸渍布线基材，或通过浇淋、喷雾等将树脂析出防止剂溶液散布在基材上，或通过旋涂机等来进行涂布等，使树脂析出防止剂与基材接触，然后水洗、干燥即可。 
作为布线基材，可以列举引线框、印刷布线板等半导体布线基材，对进行树脂析出防止处理的基材的表面，优选进行金、银、钯、铜、镍等的镀敷。
通过进行上述的树脂析出防止处理，在布线基材表面的镀敷面上吸附上述磷酸酯，由磷酸酯形成1～几个分子左右厚度的皮膜。因此，可使镀敷面与芯片键合树脂的接触角增加，而抑制芯片键合树脂的析出。此外，因为吸附的磷酸酯的皮膜非常薄，所以不会给引线键合性、成型性等装配特性带来不良影响。另外，不会损伤变色防止效果、和封孔处理效果。本发明还包括，通过上述的方法实施树脂析出防止处理而形成了该防止剂的皮膜的布线基材，以及使用了该基材的半导体封装件。 
作为在本发明的树脂析出防止处理之后使用的芯片键合树脂，作为有效的芯片键合树脂，可以是低应力型的芯片键合树脂，可以列举环氧树脂、丙烯酸系树脂等，优选环氧树脂。 
实施例 
以下，基于实施例说明本发明，但本发明并不受这些实施例限制。实施例1～6、比较例1～2 
在铜合金(Cu:97.7％-Sn:2.0％-Ni:0.2％-P:0.03％)制成的引线框基材上，为了提高密合性而进行了铜闪镀作为基底，然后在引线框架整个面上施加银镀敷、金镀敷、铜镀敷中的任一种。然后通过浸渍而进行了表1中所述的树脂析出防止处理。 
对这些基材进行芯片键合，进行了抗树脂析出性(抗RBO性)、引线键合性(W/B性)、成型性、抗变色性的评价。结果示于表1。表1中，浴液组成中的“-”表示未添加，评价中的“-”表示在评价对象之外。 
此外，表1中，R1、R2、n表示上述通式表示的磷酸酯中的R1、R2、n，磷酸酯使用了单酯与双酯的1:1混合物。所使用的磷酸酯的R1的烷基、链烯基全部是直链状，实施例5、6中的链烯基是中间具有双键的10-二十碳烯基、11-二十二碳烯基。 
抗树脂析出性的评价按照以下方法来进行。 
将市售的低应力芯片键合用环氧树脂(エイブルボンド8340，エイブルステイツク社制造)涂布在进行了树脂析出防止处理的镀敷面上之后，在大气中，在室温下放置了2小时。接着，在大气中电热板上，在175℃下 热固化1小时，然后用金属显微镜(100倍)观察环氧树脂涂布部分，如图1所示，测定树脂析出最严重的部分的析出量(RBO量)，如下那样进行了评价。 
○：不足10μm 
△：大于等于10μm，且不足50μm 
×：大于等于50μm 
引线键合性的评价按照以下方法来进行。 
使用25μm的金属引线，通过并用超声波的热压接方式(温度：200℃，负荷：50g，时间：10ms)进行引线键合，用拉力测试仪测定拉力强度，如下那样进行了评价。 
○：大于等于10gf 
×：不足10gf 
成型特性的评价按照以下的方法来进行。 
将市售的成型用环氧树脂(住友ベ—クライト制造EME-6300)涂布在进行了树脂析出防止处理的镀层面上之后，在175℃下加热固化5小时，然后，测定密合性(剪切强度)，如下那样进行了评价。 
○：大于等于20kgf/cm2
△：大于等于10kgf/cm2，且不足20kgf/cm2
×：不足10kgf/cm2
抗变色性的评价按照以下的方法来进行。 
在40℃下以90％的湿度加湿96小时后，观察外观，如下那样进行了评价。 
○：无变色 
×：有变色
Figure G2008800001844D00081

Claims (5)

1.一种树脂析出防止剂，其特征在于，含有下述通式表示的磷酸酯，
O＝P(O-(R2-O)n-R1)m(OH)3-m
上式中，R1表示碳原子数为4～30的烷基、链烯基、链炔基中的任一种，R2表示低级亚烷基，n表示0～10的整数，m表示1～3的整数，
所述树脂是指用于使半导体芯片与基材接合固定的芯片键合树脂，
所述树脂析出是指在芯片键合工序中涂布芯片键合树脂时发生的树脂析出。
2.根据权利要求1所述的树脂析出防止剂，其特征在于，上述磷酸酯的R1是碳原子数8～20的烷基、链烯基、链炔基中的任一种，R2是亚乙基，n是1～6的整数，m是1～3的整数。
3.根据权利要求1或2所述的树脂析出防止剂，其特征在于，进而含有：包含四唑衍生物、三唑衍生物、咪唑衍生物、噻唑衍生物中的任一种的含氮杂环状化合物系的变色防止剂。
4.一种树脂析出防止方法，其特征在于，使用根据权利要求1～3的任一项所述的树脂析出防止剂来进行树脂析出防止处理。
5.一种基材，其特征在于，通过使用根据权利要求1～3的任一项所述的树脂析出防止剂对该基材进行树脂析出防止处理，而使该基材具有该树脂析出防止剂的皮膜。
CN2008800001844A 2007-05-21 2008-04-28 树脂析出防止剂、树脂析出防止方法和基材 Active CN101542718B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007133690 2007-05-21
JP133690/2007 2007-05-21
PCT/JP2008/058186 WO2008142960A1 (ja) 2007-05-21 2008-04-28 レジンブリードアウト防止剤及びレジンブリードアウト防止方法

Publications (2)

Publication Number Publication Date
CN101542718A CN101542718A (zh) 2009-09-23
CN101542718B true CN101542718B (zh) 2012-06-13

Family

ID=40031676

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008800001844A Active CN101542718B (zh) 2007-05-21 2008-04-28 树脂析出防止剂、树脂析出防止方法和基材

Country Status (7)

Country Link
JP (1) JP5067948B2 (zh)
KR (1) KR101076118B1 (zh)
CN (1) CN101542718B (zh)
HK (1) HK1135507A1 (zh)
MY (1) MY154006A (zh)
TW (1) TWI384047B (zh)
WO (1) WO2008142960A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MY163131A (en) * 2009-12-17 2017-08-15 Jx Nippon Mining & Metals Corp Resin-bleedout preventing agent
KR101375192B1 (ko) * 2012-02-03 2014-03-17 삼성테크윈 주식회사 리드 프레임의 에폭시 블리드 아웃 방지 방법
KR102190964B1 (ko) 2014-03-18 2020-12-15 해성디에스 주식회사 블리드 아웃 방지제, 이를 포함하는 블리드 아웃 방지용 조성물 및 블리드 아웃 방지 방법
CN107353855B (zh) * 2017-08-01 2019-03-29 烟台德邦科技有限公司 一种低树脂析出的芯片粘合剂及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1247633A (zh) * 1997-12-26 2000-03-15 株式会社日本能源 阻止环氧树脂渗出的试剂和方法
CN1678769A (zh) * 2002-10-18 2005-10-05 株式会社日矿材料 对Sn合金的表面处理剂及表面处理方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3155139B2 (ja) * 1993-12-28 2001-04-09 株式会社神戸製鋼所 耐酸化性に優れたすずまたはすず合金めっき材およびその製造方法
JPH1060381A (ja) * 1996-08-21 1998-03-03 Denki Kagaku Kogyo Kk 嫌気性アクリル系接着剤用プライマー組成物
KR100271558B1 (ko) * 1998-09-04 2001-01-15 김무 구리계 리드프레임의 수지누출억제 및 표면부식방지용 조성물
MY157869A (en) * 2006-01-17 2016-07-29 Jx Nippon Mining & Metals Corp Preventing agent for epoxy resin bleeding out

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1247633A (zh) * 1997-12-26 2000-03-15 株式会社日本能源 阻止环氧树脂渗出的试剂和方法
CN1678769A (zh) * 2002-10-18 2005-10-05 株式会社日矿材料 对Sn合金的表面处理剂及表面处理方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JP特开2003-246828A 2003.09.05
JP特开平10-60381A 1998.03.03
JP特开平7-188942A 1995.07.25

Also Published As

Publication number Publication date
KR20090009201A (ko) 2009-01-22
MY154006A (en) 2015-04-30
TW200914568A (en) 2009-04-01
CN101542718A (zh) 2009-09-23
JPWO2008142960A1 (ja) 2010-08-05
HK1135507A1 (en) 2010-06-04
TWI384047B (zh) 2013-02-01
JP5067948B2 (ja) 2012-11-07
WO2008142960A1 (ja) 2008-11-27
KR101076118B1 (ko) 2011-10-21

Similar Documents

Publication Publication Date Title
KR100556679B1 (ko) 구리 기판의 선택적 침착방법
CN100379898C (zh) 用于蚀刻铜表面的溶液和在铜表面上沉积金属的方法
CN101542718B (zh) 树脂析出防止剂、树脂析出防止方法和基材
DE102010033550B4 (de) Verfahren zur Bildung von lötbaren Seitenflächen-Anschlüssen von QFN-(QUAD NO-LEAD FRAME)-Gehäusen für intregrierte Schaltungen
US8431443B2 (en) Metallic solderability preservation coating on metal part of semiconductor package to prevent oxide
US5458907A (en) Method of manufacturing printed circuit boards having an oxidation proof coating on a copper or copper alloy circuit pattern
KR100802878B1 (ko) 금속의 표면처리제, 표면처리방법 및 그 이용
CN114833491A (zh) 一种铜面选择性有机保焊剂及其使用方法
CN100546018C (zh) 防止环氧树脂渗出的试剂和方法、布线基板及半导体封装体
JP4852610B2 (ja) 加工部品の表面からイオン性の汚染物質を除去するための水溶液と方法
US6698648B2 (en) Method for producing solderable and functional surfaces on circuit carriers
KR20000029749A (ko) 반도체기판용세정수용액
KR20010042625A (ko) 주석 또는 주석 합금층으로 구리 또는 구리 합금의 표면을피복하는 방법
KR100337396B1 (ko) 에폭시 브리드 아우트 방지제 및 방지방법
US10196367B2 (en) Bleed-out preventing agent, composition for preventing bleed-out including the same, and method of preventing bleed-out
US20110171367A1 (en) Method for improving the corrosion resistance of an electronic component, particularly of conductors of a printed circuit board
CN108754466B (zh) 一种铜基表面的防鼠咬沉锡液、其化学沉锡方法及其防鼠咬铜基板
WO2011074496A1 (ja) レジンブリードアウト防止剤
DE102011008562B4 (de) Verfahren zur Bildung von lötbaren Seitenflächen-Anschlüssen von QFN-(Quad No-Lead Frame)-Gehäusen für integrierte Schaltungen
KR20210075151A (ko) 표면 처리액 및 니켈 함유 재료의 표면 처리 방법
KR19990041664A (ko) 철-니켈 합금 소재의 도금 전처리제

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1135507

Country of ref document: HK

C14 Grant of patent or utility model
GR01 Patent grant
REG Reference to a national code

Ref country code: HK

Ref legal event code: GR

Ref document number: 1135507

Country of ref document: HK

ASS Succession or assignment of patent right

Owner name: NIPPON MINING HOLDINGS INC.

Free format text: FORMER OWNER: NIPPON MINING + METALS CO., LTD.

Effective date: 20140509

C41 Transfer of patent application or patent right or utility model
C56 Change in the name or address of the patentee

Owner name: JX NIPPON MINING + METALS CORPORATION

Free format text: FORMER NAME: NIPPON MINING HOLDINGS INC.

CP01 Change in the name or title of a patent holder

Address after: Tokyo, Japan

Patentee after: JX Nippon Mining & Metals Corp.

Address before: Tokyo, Japan

Patentee before: Nippon Mining Holdings Inc.

TR01 Transfer of patent right

Effective date of registration: 20140509

Address after: Tokyo, Japan

Patentee after: Nippon Mining Holdings Inc.

Address before: Tokyo, Japan

Patentee before: Nippon Mining & Metals Co.,Ltd.

CP01 Change in the name or title of a patent holder

Address after: Tokyo, Japan

Patentee after: JX NIPPON MINING & METALS Corp.

Address before: Tokyo, Japan

Patentee before: JX Nippon Mining & Metals Corp.

CP01 Change in the name or title of a patent holder
CP02 Change in the address of a patent holder
CP02 Change in the address of a patent holder

Address after: No.4, 10-fan, erdingmu, huzhimen, Tokyo, Japan

Patentee after: JX NIPPON MINING & METALS Corp.

Address before: Tokyo, Japan

Patentee before: JX NIPPON MINING & METALS Corp.