WO2008142960A1 - レジンブリードアウト防止剤及びレジンブリードアウト防止方法 - Google Patents

レジンブリードアウト防止剤及びレジンブリードアウト防止方法 Download PDF

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Publication number
WO2008142960A1
WO2008142960A1 PCT/JP2008/058186 JP2008058186W WO2008142960A1 WO 2008142960 A1 WO2008142960 A1 WO 2008142960A1 JP 2008058186 W JP2008058186 W JP 2008058186W WO 2008142960 A1 WO2008142960 A1 WO 2008142960A1
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WO
WIPO (PCT)
Prior art keywords
resin bleeding
resin
inhibitor
integer
die bonding
Prior art date
Application number
PCT/JP2008/058186
Other languages
English (en)
French (fr)
Inventor
Akihiro Aiba
Tomoharu Mimura
Original Assignee
Nippon Mining & Metals Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining & Metals Co., Ltd. filed Critical Nippon Mining & Metals Co., Ltd.
Priority to JP2008541530A priority Critical patent/JP5067948B2/ja
Priority to CN2008800001844A priority patent/CN101542718B/zh
Publication of WO2008142960A1 publication Critical patent/WO2008142960A1/ja
Priority to HK09111835.7A priority patent/HK1135507A1/xx

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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/02—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving pretreatment of the surfaces to be joined
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/49—Phosphorus-containing compounds
    • C08K5/51—Phosphorus bound to oxygen
    • C08K5/52—Phosphorus bound to oxygen only
    • C08K5/521—Esters of phosphoric acids, e.g. of H3PO4
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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  • Chemical & Material Sciences (AREA)
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Abstract

　排水処理の負荷が小さく、低応力タイプのダイボンディング樹脂を用いた場合においても、ダイボンディング強度や、アセンブリ特性に悪影響を与えず、変色防止処理や封孔処理効果を損なうことのないレジンブリードアウト防止剤を提供することを目的とする。 　下記一般式で表されるリン酸エステルを含有することを特徴とするレジンブリードアウト防止剤。 Ｏ＝Ｐ（Ｏ－（Ｒ２－Ｏ）ｎ－Ｒ１）ｍ（ＯＨ）３－ｍ　（式中、Ｒ1は炭素数４～３０の飽和もしくは不飽和炭化水素基を表し、Ｒ2は低級アルキレン基を表し、ｎは０～１０の整数、ｍは１～３の整数を表す。）
PCT/JP2008/058186 2007-05-21 2008-04-28 レジンブリードアウト防止剤及びレジンブリードアウト防止方法 WO2008142960A1 (ja)

Priority Applications (3)

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JP2008541530A JP5067948B2 (ja) 2007-05-21 2008-04-28 レジンブリードアウト防止剤及びレジンブリードアウト防止方法
CN2008800001844A CN101542718B (zh) 2007-05-21 2008-04-28 树脂析出防止剂、树脂析出防止方法和基材
HK09111835.7A HK1135507A1 (en) 2007-05-21 2009-12-16 Resin-bleedout preventing agent and method for preventing resin-bleedout, and substrate

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JP2007133690 2007-05-21
JP2007-133690 2007-05-21

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011074496A1 (ja) * 2009-12-17 2011-06-23 Jx日鉱日石金属株式会社 レジンブリードアウト防止剤

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KR101375192B1 (ko) * 2012-02-03 2014-03-17 삼성테크윈 주식회사 리드 프레임의 에폭시 블리드 아웃 방지 방법
KR102190964B1 (ko) 2014-03-18 2020-12-15 해성디에스 주식회사 블리드 아웃 방지제, 이를 포함하는 블리드 아웃 방지용 조성물 및 블리드 아웃 방지 방법
CN107353855B (zh) * 2017-08-01 2019-03-29 烟台德邦科技有限公司 一种低树脂析出的芯片粘合剂及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07188942A (ja) * 1993-12-28 1995-07-25 Kobe Steel Ltd 耐酸化性に優れたすずまたはすず合金めっき材およびその製造方法
JPH1060381A (ja) * 1996-08-21 1998-03-03 Denki Kagaku Kogyo Kk 嫌気性アクリル系接着剤用プライマー組成物
JPH11195662A (ja) * 1997-12-26 1999-07-21 Japan Energy Corp エポキシブリ−ドアウト防止剤及び防止方法
JP2004137574A (ja) * 2002-10-18 2004-05-13 Nikko Materials Co Ltd Ｓｎ合金に対する表面処理剤及び表面処理方法
WO2007083538A1 (ja) * 2006-01-17 2007-07-26 Nippon Mining & Metals Co., Ltd. エポキシブリードアウト防止剤

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100271558B1 (ko) * 1998-09-04 2001-01-15 김무 구리계 리드프레임의 수지누출억제 및 표면부식방지용 조성물

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07188942A (ja) * 1993-12-28 1995-07-25 Kobe Steel Ltd 耐酸化性に優れたすずまたはすず合金めっき材およびその製造方法
JPH1060381A (ja) * 1996-08-21 1998-03-03 Denki Kagaku Kogyo Kk 嫌気性アクリル系接着剤用プライマー組成物
JPH11195662A (ja) * 1997-12-26 1999-07-21 Japan Energy Corp エポキシブリ−ドアウト防止剤及び防止方法
JP2004137574A (ja) * 2002-10-18 2004-05-13 Nikko Materials Co Ltd Ｓｎ合金に対する表面処理剤及び表面処理方法
WO2007083538A1 (ja) * 2006-01-17 2007-07-26 Nippon Mining & Metals Co., Ltd. エポキシブリードアウト防止剤

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011074496A1 (ja) * 2009-12-17 2011-06-23 Jx日鉱日石金属株式会社 レジンブリードアウト防止剤

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CN101542718B (zh) 2012-06-13
KR101076118B1 (ko) 2011-10-21
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TWI384047B (zh) 2013-02-01
KR20090009201A (ko) 2009-01-22

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