MY154006A - Resin-bleedout preventing agent and method for preventing resin-bleedout - Google Patents
Resin-bleedout preventing agent and method for preventing resin-bleedoutInfo
- Publication number
- MY154006A MY154006A MYPI20083473A MYPI20083473A MY154006A MY 154006 A MY154006 A MY 154006A MY PI20083473 A MYPI20083473 A MY PI20083473A MY PI20083473 A MYPI20083473 A MY PI20083473A MY 154006 A MY154006 A MY 154006A
- Authority
- MY
- Malaysia
- Prior art keywords
- resin
- bleedout
- preventing
- preventing agent
- integer
- Prior art date
Links
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 230000002411 adverse Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 150000002430 hydrocarbons Chemical group 0.000 abstract 1
- 150000003014 phosphoric acid esters Chemical class 0.000 abstract 1
- 229920006395 saturated elastomer Polymers 0.000 abstract 1
- 229930195734 saturated hydrocarbon Natural products 0.000 abstract 1
- 239000000565 sealant Substances 0.000 abstract 1
- 238000005494 tarnishing Methods 0.000 abstract 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 abstract 1
- 238000004065 wastewater treatment Methods 0.000 abstract 1
Classifications
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/02—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving pretreatment of the surfaces to be joined
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/49—Phosphorus-containing compounds
- C08K5/51—Phosphorus bound to oxygen
- C08K5/52—Phosphorus bound to oxygen only
- C08K5/521—Esters of phosphoric acids, e.g. of H3PO4
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85439—Silver (Ag) as principal constituent
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85444—Gold (Au) as principal constituent
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85447—Copper (Cu) as principal constituent
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L2924/01—Chemical elements
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
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- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Die Bonding (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Sealing Material Composition (AREA)
- Lead Frames For Integrated Circuits (AREA)
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Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2007133690 | 2007-05-21 |
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MY154006A true MY154006A (en) | 2015-04-30 |
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Application Number | Title | Priority Date | Filing Date |
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MYPI20083473A MY154006A (en) | 2007-05-21 | 2008-09-08 | Resin-bleedout preventing agent and method for preventing resin-bleedout |
Country Status (7)
Country | Link |
---|---|
JP (1) | JP5067948B2 (ja) |
KR (1) | KR101076118B1 (ja) |
CN (1) | CN101542718B (ja) |
HK (1) | HK1135507A1 (ja) |
MY (1) | MY154006A (ja) |
TW (1) | TWI384047B (ja) |
WO (1) | WO2008142960A1 (ja) |
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WO2011074496A1 (ja) * | 2009-12-17 | 2011-06-23 | Jx日鉱日石金属株式会社 | レジンブリードアウト防止剤 |
KR101375192B1 (ko) * | 2012-02-03 | 2014-03-17 | 삼성테크윈 주식회사 | 리드 프레임의 에폭시 블리드 아웃 방지 방법 |
KR102190964B1 (ko) | 2014-03-18 | 2020-12-15 | 해성디에스 주식회사 | 블리드 아웃 방지제, 이를 포함하는 블리드 아웃 방지용 조성물 및 블리드 아웃 방지 방법 |
CN107353855B (zh) * | 2017-08-01 | 2019-03-29 | 烟台德邦科技有限公司 | 一种低树脂析出的芯片粘合剂及其制备方法 |
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JP3155139B2 (ja) * | 1993-12-28 | 2001-04-09 | 株式会社神戸製鋼所 | 耐酸化性に優れたすずまたはすず合金めっき材およびその製造方法 |
JPH1060381A (ja) * | 1996-08-21 | 1998-03-03 | Denki Kagaku Kogyo Kk | 嫌気性アクリル系接着剤用プライマー組成物 |
JP3343210B2 (ja) * | 1997-12-26 | 2002-11-11 | 株式会社ジャパンエナジー | エポキシブリ−ドアウト防止剤及び防止方法 |
KR100271558B1 (ko) * | 1998-09-04 | 2001-01-15 | 김무 | 구리계 리드프레임의 수지누출억제 및 표면부식방지용 조성물 |
JP4215235B2 (ja) * | 2002-10-18 | 2009-01-28 | 日鉱金属株式会社 | Sn合金に対する表面処理剤及び表面処理方法 |
MY157869A (en) * | 2006-01-17 | 2016-07-29 | Jx Nippon Mining & Metals Corp | Preventing agent for epoxy resin bleeding out |
-
2008
- 2008-04-28 WO PCT/JP2008/058186 patent/WO2008142960A1/ja active Application Filing
- 2008-04-28 KR KR1020087025414A patent/KR101076118B1/ko active IP Right Grant
- 2008-04-28 CN CN2008800001844A patent/CN101542718B/zh active Active
- 2008-04-28 JP JP2008541530A patent/JP5067948B2/ja active Active
- 2008-05-06 TW TW097116595A patent/TWI384047B/zh active
- 2008-09-08 MY MYPI20083473A patent/MY154006A/en unknown
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Also Published As
Publication number | Publication date |
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TW200914568A (en) | 2009-04-01 |
TWI384047B (zh) | 2013-02-01 |
JPWO2008142960A1 (ja) | 2010-08-05 |
KR20090009201A (ko) | 2009-01-22 |
JP5067948B2 (ja) | 2012-11-07 |
CN101542718A (zh) | 2009-09-23 |
HK1135507A1 (en) | 2010-06-04 |
WO2008142960A1 (ja) | 2008-11-27 |
CN101542718B (zh) | 2012-06-13 |
KR101076118B1 (ko) | 2011-10-21 |
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