CN101533229B - 用于投影曝光装置的标线以及使用它的曝光方法 - Google Patents
用于投影曝光装置的标线以及使用它的曝光方法 Download PDFInfo
- Publication number
- CN101533229B CN101533229B CN2009101288123A CN200910128812A CN101533229B CN 101533229 B CN101533229 B CN 101533229B CN 2009101288123 A CN2009101288123 A CN 2009101288123A CN 200910128812 A CN200910128812 A CN 200910128812A CN 101533229 B CN101533229 B CN 101533229B
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- China
- Prior art keywords
- alignment mark
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- rectangle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
- G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Library & Information Science (AREA)
- Multimedia (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008-058908 | 2008-03-10 | ||
JP2008058908 | 2008-03-10 | ||
JP2008058908A JP2009216844A (ja) | 2008-03-10 | 2008-03-10 | 縮小投影露光装置用レチクルおよびそれを用いた露光方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101533229A CN101533229A (zh) | 2009-09-16 |
CN101533229B true CN101533229B (zh) | 2013-03-27 |
Family
ID=41053257
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101288123A Expired - Fee Related CN101533229B (zh) | 2008-03-10 | 2009-03-10 | 用于投影曝光装置的标线以及使用它的曝光方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7951512B2 (zh) |
JP (1) | JP2009216844A (zh) |
KR (1) | KR20090097126A (zh) |
CN (1) | CN101533229B (zh) |
TW (1) | TWI428687B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103176350A (zh) * | 2011-12-26 | 2013-06-26 | 和舰科技(苏州)有限公司 | 一种使晶圆上芯片数量最大化的光罩制作方法 |
TWI676079B (zh) * | 2016-09-30 | 2019-11-01 | 聯華電子股份有限公司 | 光罩圖案驗證方法、光罩形成方法以及半導體結構 |
CN108957960A (zh) * | 2018-06-06 | 2018-12-07 | 中国电子科技集团公司第五十五研究所 | 一种提升衬底有效芯片数目的曝光方法 |
JP7459490B2 (ja) * | 2019-11-28 | 2024-04-02 | 株式会社ソシオネクスト | 半導体ウェハ及び半導体装置 |
US11669012B2 (en) | 2020-02-21 | 2023-06-06 | Applied Materials, Inc. | Maskless lithography method to fabricate topographic substrate |
CN113219797B (zh) * | 2021-03-25 | 2023-11-17 | 北海惠科半导体科技有限公司 | 晶圆半导体产品及其制作方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1221209A (zh) * | 1997-12-04 | 1999-06-30 | 日本电气株式会社 | 使用专门定位对准标记进行电子束平版印刷的方法和带有这种对准标记的晶片 |
CN1280314A (zh) * | 1999-07-09 | 2001-01-17 | 日本电气株式会社 | 半导体器件的制造方法 |
CN1773679A (zh) * | 2004-11-11 | 2006-05-17 | 富士通株式会社 | 半导体衬底、半导体器件制造方法和半导体器件测试方法 |
CN1961407A (zh) * | 2004-04-23 | 2007-05-09 | 尼康股份有限公司 | 曝光装置及曝光方法、以及元件制造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0318012A (ja) | 1989-06-14 | 1991-01-25 | Matsushita Electron Corp | 縮小投影露光装置用レチクル |
JP2000252193A (ja) * | 1999-03-01 | 2000-09-14 | Canon Inc | 露光装置、露光方法およびデバイス製造方法 |
JP3907940B2 (ja) * | 2000-12-04 | 2007-04-18 | Necエレクトロニクス株式会社 | 露光方法 |
JP2005283609A (ja) * | 2004-03-26 | 2005-10-13 | Sharp Corp | 縮小投影露光装置用レチクル |
JP4278645B2 (ja) * | 2005-09-30 | 2009-06-17 | 株式会社リコー | 半導体ウェハ及びそのレイアウト設定方法並びにレチクルレイアウト設定方法 |
JP2007310048A (ja) * | 2006-05-17 | 2007-11-29 | Sharp Corp | フォトマスク、ウエハおよび半導体チップ |
JP2007328289A (ja) * | 2006-06-09 | 2007-12-20 | Sanyo Electric Co Ltd | レチクル,半導体チップ,及び半導体装置の製造方法 |
-
2008
- 2008-03-10 JP JP2008058908A patent/JP2009216844A/ja active Pending
-
2009
- 2009-03-06 US US12/399,541 patent/US7951512B2/en not_active Expired - Fee Related
- 2009-03-06 TW TW098107337A patent/TWI428687B/zh not_active IP Right Cessation
- 2009-03-09 KR KR1020090019933A patent/KR20090097126A/ko not_active Application Discontinuation
- 2009-03-10 CN CN2009101288123A patent/CN101533229B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1221209A (zh) * | 1997-12-04 | 1999-06-30 | 日本电气株式会社 | 使用专门定位对准标记进行电子束平版印刷的方法和带有这种对准标记的晶片 |
CN1280314A (zh) * | 1999-07-09 | 2001-01-17 | 日本电气株式会社 | 半导体器件的制造方法 |
CN1961407A (zh) * | 2004-04-23 | 2007-05-09 | 尼康股份有限公司 | 曝光装置及曝光方法、以及元件制造方法 |
CN1773679A (zh) * | 2004-11-11 | 2006-05-17 | 富士通株式会社 | 半导体衬底、半导体器件制造方法和半导体器件测试方法 |
Non-Patent Citations (1)
Title |
---|
JP特开2005-283609A 2005.10.13 |
Also Published As
Publication number | Publication date |
---|---|
TWI428687B (zh) | 2014-03-01 |
KR20090097126A (ko) | 2009-09-15 |
TW200947109A (en) | 2009-11-16 |
CN101533229A (zh) | 2009-09-16 |
US7951512B2 (en) | 2011-05-31 |
JP2009216844A (ja) | 2009-09-24 |
US20090225294A1 (en) | 2009-09-10 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160318 Address after: Chiba County, Japan Patentee after: SEIKO INSTR INC Address before: Chiba, Chiba, Japan Patentee before: Seiko Instruments Inc. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: EPPs Lingke Co. Ltd. Address before: Chiba County, Japan Patentee before: SEIKO INSTR INC |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130327 Termination date: 20200310 |